S1307 Search Results

Contextual Info: SiRA34DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 30 0.0067 at VGS = 10 V 40 0.0098 at VGS = 4.5 V 40 Qg (Typ.) 8 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • • • • 5.15 mm 1 S 2 S 3 • TrenchFET® Gen IV Power MOSFET

200743D

Abstract: S1308 S1307 BAW 43 S1309 MSL3 20-pin SKY73023-21
Contextual Info: PRELIMINARY DATA SHEET SKY65238: Power Amplifier Module With Integrated BAW Filter for WLAN Applications Applications Description • IEEE802.11 b/g/n WLAN − Access points and routers − Set top boxes, gaming consoles, and other home entertainment devices including video, voice, and data

Contextual Info: SiA400EDJ Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a 0.019 at VGS = 4.5 V 12 0.025 at VGS = 2.5 V 12 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area

Contextual Info: Si5415EDU www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () (Max.) ID (A)a 0.0098 at VGS = - 4.5 V - 25 0.0114 at VGS = - 3.7 V - 25 0.0143 at VGS = - 2.5 V - 25 0.0250 at VGS = - 1.8 V -7 Qg (Typ.)

Contextual Info: SQP120N06-06 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.006 ID (A) • AEC-Q101 Qualifiedd

Contextual Info: SQJ942EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFETs FEATURES PRODUCT SUMMARY N-CHANNEL 1 N-CHANNEL 2 VDS (V) 40 40 RDS(on) () at VGS = 10 V 0.022 0.011 RDS(on) () at VGS = 4.5 V 0.026 0.013 ID (A) 15 Configuration

Contextual Info: SPICE Device Model SiR414DP www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

ELAP CM 72

Abstract: ELAP cm 76 fm transmitter 2KM documentation DDU-66F-XXX ELAP CM 140 hp laptop battery pack pinout semi catalog EB 203 D maxim evaluation kit touch dimmer TC 306 S
Contextual Info: Data B ook C o n t e n t s •S h o r t • F irst • S a l e s -Fo -Pa O rm g e C atalog Data S h e e t s ffic es CD •C ROM C o n ten ts: o m p l e t e Data S an d A pplication fo r A l l • U s e r 's G P h e e t s n o t e s r o d u c ts uides p. -••x;. < ~x3xxr r -> ~' ' fP 5 > g? 3

Contextual Info: Si5415EDU www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () (Max.) ID (A)a 0.0098 at VGS = - 4.5 V - 25 0.0114 at VGS = - 3.7 V - 25 0.0143 at VGS = - 2.5 V - 25 0.0250 at VGS = - 1.8 V -7 Qg (Typ.)

Contextual Info: New Product Si7101DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.0072 at VGS = - 10 V - 35d 0.0130 at VGS = - 4.5 V - 35d • TrenchFET Power MOSFET • 100% Rg and UIS Tested • Material categorization:

S1307

Abstract: DS1307Z T
Contextual Info: DSÎ307 PALLAS S1307 SEMICONDUCTOR 64 X 8 Serial Real Time Clock FEATURES PIN ASSIGNMENT • Real tim e clock counts seconds, m inutes, hours, date of the month, month, day of the week, and year with leap year com pensation valid up to 2100 X1 C • 5 6 -b y te nonvolatile RAM for data storage

Contextual Info: SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 0.0027 at VGS = 10 V 60 0.0033 at VGS = 6 V 60 0.0048 at VGS = 4.5 V 60 60 Qg (Typ.) 27.5 nC PowerPAK SO-8 S 6.15 mm • • • • • • S 2

Contextual Info: SPICE Device Model SiR158DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiR166DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

rtc ds1307

Abstract: DS1308 interfacing DS1307 oS1307n DS1307 DS1307N DS1307Z DS1307ZN DS1308N
Contextual Info: S1307/DS1308 D A LLA S 1307/DS1308 . DS s e m ic o n d u c to r 64 X 8 Serial Real Time Clock FEATURES PIN ASSIGNMENT • Real tim e clock counts seconds, minutes, hours, date of the month, month, day of the week, and year with leap year com pensation valid up to 2100

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

HX8369

Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
Contextual Info: DOC No. HX8369-A00-DS HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver Version 02 October, 2010 HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents October, 2010

Contextual Info: SQJ942EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFETs FEATURES PRODUCT SUMMARY N-CHANNEL 1 N-CHANNEL 2 VDS (V) 40 40 RDS(on) () at VGS = 10 V 0.022 0.011 RDS(on) () at VGS = 4.5 V 0.026 0.013 ID (A) 15 Configuration

Contextual Info: Si1012R, Si1012X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • SC-75A or SC-89 G 1 APPLICATIONS 3

Contextual Info: SUD08P06-155L-GE3 Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 • TrenchFET Power MOSFETS RDS(on) () ID (A) 0.155 at VGS = - 10 V - 8.4 0.280 at VGS = - 4.5 V - 7.4 Qg (Typ) • Material categorization: For definitions of compliance please see

Contextual Info: SiR688DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 0.0035 at VGS = 10 V 60 0.0045 at VGS = 6 V 60 0.0060 at VGS = 4.5 V 60 60 Qg (Typ.) 20.5 nC PowerPAK SO-8 S 6.15 mm S 3 D • Synchronous Rectifier

s2513

Abstract: MSM 7225 S1709 E146370 S1113 s1716 SLR-16 s2311 sm 314 1040 D1 S2438
Contextual Info: Patent #: P-2631996 Patented Security: International Approvals: UL # E146370 CSA # LR50370-10 VDE # 57986 SEV # 100989 Protection: Material: Rated Temperature: Seal: Resistant to: Up to 70 PSI Polyamide - flame retardant, self-extinguishing nylon with neoprene bushing

IC ds1307 pin diagram

Abstract: S1307 rtc ds1307 pin diagram IC DS1307
Contextual Info: S1307 DALLAS SEMICONDUCTOR S1307 64 X 8 Serial Real Time Clock FEATURES PIN ASSIGNMENT • Real time clock counts seconds, minutes, hours, date of the month, month, day of the week, and ye a r with leap ye a r com pensation valid up to 2100 X1 X2 Vbat • 56 byte nonvolatile RAM for data storage

RTC 1307

Abstract: pin diagram rtc ds 1307 rtc 1307 IC STAR RAM YEAR DATE CODE IC DS1307 RTC+1307
Contextual Info: DS 1307 DALLAS SEMICONDUCTOR S1307 64 X 8 Serial Real Time Clock F EA T U R ES PIN A S S IG N M E N T • Real time clock counts seconds, minutes, hours, date of the month, month, day of the week, and year with leap year com pensation valid up to 2100 X1