S1319 Search Results

PD6465

Abstract: dot matrix printer circuit diagram datasheet microcontroller based dot matrix message display line follower robot using microcontroller uPD6464 ic q110 upc646 diode A2 12 line follower robot based on micro PC MONITOR VIDEO OUTPUT CONNECTOR
Contextual Info: User’s Manual OSD LSIs µPD6461 µPD6462 µPD6464A µPD6465 µPD6466 Document No. S13197EJ1V0UMJ1 1st Edition Publication Date October 2000 N CP(K) Printed in Japan 1998 [MEMO] 2 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note:

SKY73126-31

Abstract: ID31 S1191 S1315 S1317
Contextual Info: DATA SHEET SKY73126-31: 161.92 MHz High Performance VCO/Synthesizer Applications Description x 3GPP Long-Term Evolution systems Skyworks SKY73126-31 Voltage-Controlled Oscillator VCO /Synthesizer is a fully integrated, high performance signal source for base station transceivers. The device provides low

Contextual Info: SiHG22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.18 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single Note * This datasheet provides information about parts that are

Contextual Info: SiHG64N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.047 Qg max. (nC) 369 • Reduced Switching and Conduction Losses

PC2807

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

SKY73126-31

Abstract: S1193 S1315 ID31 S1191 S-1315 S1317 PLL 2400 MHZ S1319
Contextual Info: DATA SHEET SKY73126-31: 161.92 MHz High Performance VCO/Synthesizer Applications Description • 3GPP Long-Term Evolution systems Skyworks SKY73126-31 Voltage-Controlled Oscillator VCO /Synthesizer is a fully integrated, high performance signal source for base station transceivers. The device provides low

SI1489EDH

Contextual Info: SPICE Device Model Si1489EDH www.vishay.com Vishay Siliconix P-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

diode A2 12

Abstract: 1SV163 PD6465 uPD6464
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: SiHF12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.38 70 Qgs (nC) 9 Qgd (nC) 16

7m812

Abstract: IDT7M S1319 Idt7m812
Contextual Info: 512K 6 4 K x 8-BIT or 64K x 9-BIT C M O S STATIC RAM M ODULE IDT 7M812 IDT 7M912 FEATURES: DESCRIPTION: • High-density 512K-bi1 C M O S static RAM module • 64K x 8 (IDT7M 812) or 64K x 9 (IDT7M 912) configuration • Fast access times The ID T7M 812/ID T7M 912 are 512K-bit high-speed CM OS

Contextual Info: 512K 64K x 8 SYNCHRONOUS STATIC RAM PLASTIC SIP MODULE FEATURES: • 64K x 8 fu lly s y n ch ro n o u s m em ory • H ig h -s p e e d -2 0 M H z read c y c le tim e • 16-bit syn ch ro n o u s a dd re ss Input • 8-bit synchronous data Input • S y n ch ro n o us c h ip se le ct a n d w rite e na b le

Contextual Info: SiS496EDNT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0048 at VGS = 10 V 50 0.0062 at VGS = 4.5 V 50 VDS (V) 30 TrenchFET Power MOSFET 100 % Rg and UIS tested Thin 0.75 mm height Typical ESD performance 2500 V

PC2807

Abstract: PAD3 s3 amplifier
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

Contextual Info: SPICE Device Model SiRA06DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SiA449DJ Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () (Max.) ID (A) 0.020 at VGS = - 10 V - 12a 0.024 at VGS = - 4.5 V - 12a 0.038 at VGS = - 2.5 V a Qg (Typ.) 23.1 nC - 12 PowerPAK SC-70-6L-Single APPLICATIONS

transistor 2807A

Abstract: PC2807
Contextual Info: DATA SHEET BiCMOS INTEGRATED CIRCUIT µ PC2807,2807A PREAMPLIFIER FOR INFRARED REMOTE CONTROLLER DESCRIPTION The µ PC2807 and 2807A are semiconductors integrated circuit developed as preamplifiers for the receiver module of infrared remote controllers. These preamplifiers can be directly connected to a PIN photodiode, and integrate a high-gain

MP666

Contextual Info: 256K 16Kx 16-BIT & 128K (8Kx 16-BIT) CMOS STATIC RAM PLASTIC SIP MODULES IDT 8MP656S IDT 8MP628S FEATURES: DESCRIPTION: • H ig h -de n sity 256K /128K C M O S sta tic RAM m o du le s • 16K x 16 orga n izatio n (IDT8M P656S) w ith 8K x 16 o p tio n (IDT8MP628)

PD6464A

Abstract: at 6462 ram IC cd 1619 CP PD6465 1SV163 HSYNC, VSYNC input output
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

PC2807

Abstract: s3 amplifier 19Ma1
Contextual Info: データ・シート BiCMOS 集積回路 BiCMOS Integrated Circuit µ PC2807,2807A 赤外線リモート・コントロール用プリアンプ µ PC2807, 2807A は，赤外線リモコン受光モジュール用のプリアンプ用に開発された半導体集積回路です。PIN フォ

HX8369

Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
Contextual Info: DOC No. HX8369-A00-DS HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver Version 02 October, 2010 HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents October, 2010

Contextual Info: SiHP28N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.122 140 Qgs (nC) 21 Qgd (nC)

Contextual Info: SiHW64N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V • Low Input Capacitance (Ciss) 0.047 Qg max. (nC) 369 • Reduced Switching and Conduction Losses

Contextual Info: SiHG28N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.122 140 Qgs (nC) 21 Qgd (nC)

Contextual Info: 512K 64K X 8 SYNCHRONOUS STATIC RAM PLASTIC SIP MODULE FEATURES: • • • • • • • • • 64K x 8 fully synchronous memory High-speed-20M Hz read cycle time 16-bit synchronous address input 8-bit synchronous data input Synchronous chip select and write enable