S1406 Search Results

S4112

Abstract: S25920
Contextual Info: Other Types of Si Photodiode S i P h o t o d i o d e s W it h P r e - a m p lif ie r Atfive Area TyceNo F oas SSRStMfy Waueiength Spectral Response Rango X dm rnm) 190 to 1100 S1406-04 320 to 1100 2.4x2.4 S 1406-06 SSS80 960 «2.54 320 to 1060 920 High-speed response

S2858

Abstract: S2858-01 PIN photodiode 300 nm photodiode 1100 nm S2856 S3887 photodiode 1000 nm G1957 24x24
Contextual Info: c • Photodiode/Op Amp Devices Type No. Peak Spectral Active Area Response Sensitivity Size Range Wavelength nm (mm) (mm) Features S1406-03 2.4X2.4 190 to 1100 S1406-04 2.4X2.4 320 to 1100 960 S1406-05 2.4X2.4 190 to 1000 720 S1406-06 2.4X2.4 320 to 1000

LSI Logic lsi53c876

Abstract: LSI53C876 MAS 8100 S LSI53C875 LSI53C876E SN75976A S14044
Contextual Info: TECHNICAL MANUAL LSI53C876/876E PCI to Dual Channel SCSI Multifunction Controller Version 2.1 March 2001 S14066 This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties

D3318

Abstract: LSI53C897
Contextual Info: TECHNICAL MANUAL LSI53C897 PCI to Dual Channel Ultra2 SCSI Multifunction Controller Version 2.0 April 2001 S14060 This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties

DIODE BUZ 94

Contextual Info: SIEMENS BUZ 255 N ot fo r new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 255 Vbs 200 V b 13 A RoSlon 0.24 Q Package Ordering Code TO-220 AB C67078-S1406-A2 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: SIEMENS BUZ 255 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 255 Vbs 200 V b 13 A ^bS on 0.24 Q Package Ordering Code TO-220 AB C67078-S1406-A2 Maximum Ratings Parameter Symbol Continuous drain current

LSI53C810A

Abstract: UC5601QP LSI53C810
Contextual Info: TECHNICAL MANUAL LSI53C810A PCI to SCSI I/O Processor Version 2.1 March 2001 S14067 This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.

SIL02456

Contextual Info: SIEMENS SIPMOS Power Transistor BUZ 255 • N channel • Enhancement mode • Avalanche-rated Type VDs ¡D ^DS on Package 11 Ordering Code BUZ 255 250 V 13.0 A 0.24 Q TO-220 AB C67078-S1406-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 31 "C

DIODE BY 255

Abstract: C67078-S1406-A2
Contextual Info: BUZ 255 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 255 200 V 13 A 0.24 Ω TO-220 AB C67078-S1406-A2 Maximum Ratings Parameter Symbol

LSI53C875JBE

Abstract: LSI53C875JB LSI53C875J sem 2105 LSI53C875 SDIR11 B 722 P LSI53C875JE
Contextual Info: TECHNICAL MANUAL LSI53C875/875E PCI to Ultra SCSI I/O Processor Version 4.1 March 2001 S14063 This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.

LSI22915A

Abstract: pc 525 ad6070 LSI22915 how to connect led s cables motherboard canada ices 003 class b S14068 str 2105 D3318 ICES-003 LSI53C1010
Contextual Info: USER’S GUIDE LSI22915A PCI to Dual Channel Ultra160 SCSI Host Adapter Version 1.2 April 2001 S14068 Electromagnetic Compatibility Notices This device complies with Part 15 of the FCC Rules. Operation is subject to the following two conditions: 1. 2. This device may not cause harmful interference, and

Photodiode, TO-5,

Abstract: ALCAN S1406-06 S1406-03 340nm Borosilicate S1226 1M12 S1336 hamamatsu PIN TO5
Contextual Info: SILICON PHOTODIODES WITH BUILT-IN OP AMP S1406 SERIES HAMAMATSU T E C H N IC A L D A T A FEATURES • Uses UV enhanced s ilic o n p h o to d io d e s S1226, S1336 series • FET in p u t o p e ra tio n a l a m p lifie r ( I b = 30pA) • H erm etica lly sealed in th e TO-5 package

Contextual Info: Si Photodiodes with Pre-amp Type No. Active Area Feature mm S1406 Series 2.4 X S5590 2.4 X S5591 5.8 X Uses a photodiode chip of the S1226 or S1336 series and a borosilicate glass or quartz glass 2.4 window. Low noise operation suitable for precision measurement at low-light-level.

DNES-309170W

Abstract: 78148 FSP 3131 seagate logic board ULTRASPARC-III LSI40909G-S LSIFC909 SA30 111d2 Infinity Sales
Contextual Info: USER’S GUIDE LSI40909G-S PCI to Fibre Channel Host Adapter for Sun Solaris Version 1.0 February 2001 S14062 Electromagnetic Compatibility Notices This device complies with Part 15 of the FCC Rules. Operation is subject to the following two conditions:

lsi53c710

Abstract: 53c770 53C700 LSI53C770 *720SE 75LBC976 intel 80386dx intel 80386sx TEA 0663 TEA 5560
Contextual Info: TECHNICAL MANUAL LSI53C770 Ultra SCSI I/O Processor Version 2.1 March 2001 S14061 This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.

Contextual Info: 4 5 2 e!t i GÌ 00031a *47 30Ö • HPKJ Photodiode/Op Amp Devices Type No. Peak Spectral Active Area Response Sensitivity Size Range Wavelength mm (nm) (mm) Features S1406-03 2.4X2.4 190 to 1100 960 S1406-04 2.4X2.4 320 to 1100 960 S1406-05 2.4X2.4 190 to 1000

LSI53C860

Abstract: UC5601QP LSI53C810
Contextual Info: TECHNICAL MANUAL LSI53C860 PCI to Ultra SCSI I/O Processor Version 2.1 April 2001 S14069 This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.

s1409

Abstract: murata REEL label lot number SKY65050-372LF
Contextual Info: DATA SHEET SKY65050-372LF: 0.45-6.0 GHz Low Noise Transistor Applications • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations • Test instrumentation • LNA for GPS receivers • Satellite receivers Figure 1. SKY65050-372LF Block Diagram

Contextual Info: SPICE Device Model SiS439DNT www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: DATA SHEET SKY65051-377LF: 0.45-6.0 GHz Low-Noise Transistor Applications • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations  Test instrumentation  LNA for GPS receivers  Satellite receivers Figure 1. SKY65051-377LF Block Diagram

P873-G35-552

Abstract: p1760-04 P873-13
Contextual Info: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and

SKY65050-372LF

Abstract: S1408 S1410 VT47 S1417
Contextual Info: DATA SHEET SKY65050-372LF: 0.45-6.0 GHz Low Noise Transistor Applications x Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations x Test instrumentation x LNA for GPS receivers x Satellite receivers Figure 1. SKY65050-372LF Block Diagram

Contextual Info: SiZ340DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) MAX. ID (A) 0.0095 at VGS = 10 V 30 a 0.0137 at VGS = 4.5 V 22 0.0051 at VGS = 10 V 40 a 0.0070 at VGS = 4.5 V

S1557

Abstract: S1651-01 metal detectors circuits S1671 S2281 S1651 S1406-06 hamamatsu PIN TO5
Contextual Info: HAMAMATSU CORP 4221fe,CH 00024T4 4 • tonæ rnim um n Speciall&Designe Specially Designed Photodiodes Ham amatsu currently produces a variety of special devices such as photodiode/op-amp detectors, TE-cooled photo­ diodes, and linear and mosaic arrays. If your application calls for something special, please contact us with your specific requirements.