S1412 Search Results

Contextual Info: QM48T/S14120 DC-DC Converter Data Sheet 36-75 VDC Input; 12 VDC @ 14 A Output Features Applications •    Telecommunications Data communications Wireless communications Servers, workstations Benefits  High efficiency – no heat sink required

Contextual Info: QM48T/S14120 DC-DC Converter Data Sheet 36-75 VDC Input; 12 VDC @ 14 A Output Features Applications •    Telecommunications Data communications Wireless communications Servers, workstations Benefits  High efficiency – no heat sink required

QM48S14120-NS00

Abstract: TR-332
Contextual Info: QM48T/S14120 DC-DC Converter Data Sheet 36-75 VDC Input; 12 VDC @ 14 A Output Features Applications • • • • Telecommunications Data communications Wireless communications Servers, workstations Benefits • High efficiency – no heat sink required

Contextual Info: QM48T/S14120 DC-DC Converter Data Sheet 36-75 VDC Input; 12 VDC @ 14 A Output Features Applications •    Telecommunications Data communications Wireless communications Servers, workstations Benefits  High efficiency – no heat sink required

QM48T14120

Abstract: TR-332
Contextual Info: QM48T/S14120 Preliminary Data Sheet 36-75 Vdc Input, 14 A, 12 Vdc Output TM The QmaX Series of high current single output DC/DC converters from di/dt sets new standards for thermal performance and power density in the quarter brick package. TM The QM48T/S14120 converters of the QmaX Series provide thermal performance in high temperature environments

Contextual Info: SiHF15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.28 78 Qgs (nC) 9 Qgd (nC) 17 Configuration Single APPLICATIONS D

Contextual Info: SiHF30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.125 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single Low figure-of-merit (FOM) Ron x Qg

Omron TL-X proximity

Contextual Info: C500-IDS01-V1/IDS02 ID Sensor Revised May 1990 Written and Produced for OMRON by: Brent Winchester Koji Suzuta DATEC Inc.
 Notice: OMRON products are manufactured for use according to proper procedures by a qualified operator and only for the purposes described in this manual.

SIA413ADJ

Contextual Info: SPICE Device Model SiA413ADJ www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: DATA SHEET SKY65051-377LF: 0.45-6.0 GHz Low-Noise Transistor Applications • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations  Test instrumentation  LNA for GPS receivers  Satellite receivers Figure 1. SKY65051-377LF Block Diagram

aeg t15

Abstract: N800COB TAG740-200.800 ST018S08P bty91 800r S2014NH SKT16F08DU 1N800COC T12N800COB t7n800
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number Manufacturer VDRM V IT Max (A) ITSM (A) lOT Max (A) VOT Max (V) IDRM dv/dt (A) (V/UB) to Operating Temperature Max (8) (OC) Min Max Package Style SeRs, VDRM >= 800 V (Co nt' d) 5 10 15 20 T10N800UOF BT152-800

Contextual Info: SiC783ACD www.vishay.com Vishay Siliconix 50 A, VRPower Integrated Power Stage DESCRIPTION FEATURES The SiC783A is an integrated power stage solution optimized for synchronous buck applications to offer high current, high efficiency and high power density

Contextual Info: Si1414DH www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) a 0.046 at VGS = 4.5 V 4 0.050 at VGS = 2.5 V 4 0.057 at VGS = 1.8 V 4 VDS (V) 30 • TrenchFET power MOSFET Qg (TYP.) • 100 % Rg tested • Material categorization:

Contextual Info: SPICE Device Model Si1469DH www.vishay.com Vishay Siliconix P-Channel 12 V G-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: SiHB15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.28 78 Qgs (nC) 9 Qgd (nC) 17

s1412

Abstract: VT47 S1416 murata 0402 footprint
Contextual Info: DATA SHEET SKY65051-377LF: 0.45-6.0 GHz Low-Noise Transistor Applications • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations  Test instrumentation  LNA for GPS receivers  Satellite receivers Figure 1. SKY65051-377LF Block Diagram

2025h

Abstract: tdk S60 CTR-21 73M2901 980Hz a 4S14 v 73M2901CE ATS12
Contextual Info: 73M2901CE V.22 bis Single Chip Modem A Maxim Integrated Products Brand APPLICATION NOTE AN_2901CE_035 November 2008 PTT Testing The 73M2901CE integrated circuit modem provides all the microprocessor control and modulation and demodulation functions required to implement a V.22 bis 2400 bps modem. Equipment to be connected to the

Contextual Info: SPICE Device Model SUD17N25-165 www.vishay.com Vishay Siliconix N-Channel 250 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: SPICE Device Model Si1422DH www.vishay.com Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: SPICE Device Model SQ4917EY www.vishay.com Vishay Siliconix Dual P-Channel 60 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

MDM 6600

Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
Contextual Info: No. 9800-OERF-007 Replaces • Remplace • Substituye No. 9800-OERF-005 Dixie Electric Ltd. OEM CROSS REFERENCE GUIDE DE RÉFÉRENCE GUÍA DE REFERENCIA 2007 Index • Índice AGCO .1

Contextual Info: SPICE Device Model Si2300DS www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: SPICE Device Model SQ2318AES www.vishay.com Vishay Siliconix N-Channel 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

s1412

Abstract: SKY65051-377LF S1416 VT47
Contextual Info: DATA SHEET SKY65051-377LF: 0.45-6.0 GHz Low Noise Transistor Applications x Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations x Test instrumentation x LNA for GPS receivers x Satellite receivers Figure 1. SKY65051-377LF Block Diagram