S2833 Search Results

Contextual Info: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 • S2506-04 S4707-01 S5077

Contextual Info: Siフォトダイオード S5627-01など プラスチックパッケージのフォトダイオード 透明プラスチックパッケージのSiフォトダイオードです。可視域可視～近赤外域にそれぞれ感度をもつタイプを用意して

near IR photodiodes

Abstract: S8745-01 S8558
Contextual Info: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5

C2719

Abstract: S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118
Contextual Info: MHE'ìbCH 0 G03 b S l fi 3 T • HPKJ PHOTO ICs A photodiode and signal processing circuit are integrated. Photo ICs are intelligent light sensors consisting of a photodiode, signal processing circuit and signal output circuit. Molded in subminiature packages, these photo ICs are especially suited for

S5557

Abstract: S1087
Contextual Info: Si Photodiodes Visible/Visible to IR Range, for General Photometry Type No. Dimensional O utline (P.50 to 52)/ W indow M aterial "1 Active Area Size (mm) Effective Spectral Response Range Area X Peak Sensitivity W avelength X,p (mm2) (nm) (nm) 320 to 730

ir remote power meter

Abstract: spectrophotometer G1746
Contextual Info: Selection Guide Spectral Response Range nm 400 600 800 1000 200 _l I I I Feature Major Application Type No. 1200 I I 1 Listed : Pa9e Si Photodiodes 190 1100 190 1000 320 1100 320 UV to IR range, for precision photometry

P873-G35-552

Abstract: p1760-04 P873-13
Contextual Info: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and

ATT ORCA fpga

Abstract: ATT ORCA fpga architecture
Contextual Info: Data Sheet May 1995 f^ A D s T Microelectronics Optimized Reconfigurable Cell Array {ORCA 1C Series Field-Programmable Gate Arrays ATT1C03, ATT1C05, ATT1C07, and ATT1C09) Features • High density: to 11,400 usable gates ■ High I/O: up to 256 usable I/O (for ATT1C09)

S8558

Contextual Info: セレクションガイド 2014.5 Siフォトダイオード 紫 外 ~ 近 赤 外 域 放 射 線 に 対 応した ラ イ ン アップ Si PHOTODIODE S i P h o t o d i o d e Siフォトダイオード 紫 外 ∼ 近 赤 外 域 、放 射 線 に 対 応した ラ イ ン アップ

Contextual Info: Si photodiodes S5493-01, etc. Photodiodes molded into clear plastic packages These are Si photodiodes molded into clear plastic packages. Two types are available with sensitivity in the visible range and in the visible to near IR range. Two active areas of 1.3 x 1.3 mm and 2.4 × 2.8 mm are also available.

S3407

Abstract: S4036 S5533
Contextual Info: Dimensional Outlines Unit : m m O S1226-18BQ, etc. 0 S1190-01, etc. 0 S2386-18L # 5 4 -0 2 WI NDOW iy o *o¿ ^ 4 PS > 0 j o 0 S5531, S5532, S5533 0 S2216-01, etc. O S1190-13 2 ^ r> 4 t ü i- 4 fih ‘ :i i V* 4 6>cj • 0 1 : o -cP -l: • > *'<i Y", 5 K 1 y jtj ¡Inirosiln . it«- ijl.iss!

S3407

Abstract: SS493 S3407-01
Contextual Info: Si Photodiodes Visible/Visible to ÍR Range, for General Photometry Type No. Dimensional Outline (P.50 to 53)/ Window Material *1 Effective Active Area Active Spectral Response Range Peak Sensitivity Wavelength X Xp Photo Sensitivity S (A/W) - - . - • - He-Ne

near IR photodiodes

Abstract: S4011-06DS S2833-01 S4797-01 S5627-01
Contextual Info: Si photodiodes S5627-01, etc. Photodiodes molded into clear plastic packages These are Si photodiodes molded into clear plastic packages. Two types are available with sensitivity in the visible range and in the visible to near IR range. Two active areas of 1.3 x 1.3 mm and 2.4 × 2.8 mm are also available.

Contextual Info: Si photodiodes S5627-01, etc. Photodiodes molded into clear plastic packages These are Si photodiodes molded into clear plastic packages. Two types are available with sensitivity in the visible range and in the visible to near IR range. Two photosensitive areas of 1.3 x 1.3 mm and 2.4 × 2.8 mm are also available.

S5532

Contextual Info: GGG3bEb bfl3 • HPKJ PIN Silicon Photodiodes 2 Dimensional Outline Type No. Package Window Material* S4280 O /K S5531 O /L 3-pin T O -1 8 with lens S4752 O /K 3-pin T O -1 8 S4753 ^ S5533 * Effective Size Active Area (mm) (mm!) ¿ 0 .8 0.5 Peak Spectral

Contextual Info: TPS2832, S2833 SYNCHRONOUS-BUCK MOSFET DRIVER WITH DEADTIME CONTROL SLVS195A - JANUARY 1999-R E V IS E D FEBRUARY 1999 • • • Floating Bootstrap or Ground-Reference High-Side Driver Active Deadtime Control 50-ns Max Rise/Fall Times and 100-ns Max Propagation Delay — 3-nF Load

GaP photodiode APD

Abstract: uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode
Contextual Info: Index by Type No Type No. Name Page S1087. .Si Photodiode Visible/Visible to IR Range, tor General Photometry . 22, 23 S1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23

S2833-01

Abstract: TH800 S3407 infrared circuit
Contextual Info: Silicon Photodiodes Visible/Visible to IR Range S 4797-01 Plastic mold S 1 133-14 Ceramic S 3407-01 *1 /R Plastic mold 1 .3 X 1 .3 1.6 2 .4 X 2 .8 6.6 32 0 to 1000 (c) 720 0.4 0.2 0.37 0.33 W in d o w m a te ria l, R: re s in c o a tin g , V: v is u a l-c o m p e n s a tio n filte r

S3407

Contextual Info: • 4 2 2 ^ 0 ^ 0DD31.22 T3A ■ HPKJ Silicon Photodiodes Visible/Visible to IR Range Dimensional CM ie Type No. (P.41-43V Window Material"1 S1087 Package Effective Area Size Active Area Spectral Response Photo Sensitivity S Typ. (A/W) Peak . Sensitivity

IFR 840

Abstract: IFR 730 S2386
Contextual Info: Si Photodiodes ScM3Ctra> Packags Type No. ' : -i Hinge i, X I f - t»rm -‘hot-. füdk S6nsitiv‘iv Seaisitviiy S Ws\ E-lefigth Xp iiwh - to NEP iA/W) IPA? ' ÍPA) Time 1 Teiminai Shunt tr Capsjcitartee Resistance 101O 90% f i t Sh V-rí) V V M )V Vr =; tOonV

photodiode

Abstract: schottky photodiode uv photodiode, GaP GaP photodiode APD Si PIN PHOTODIODE uv photodiode Si apd photodiode 800 nm GaP photodiode PIN 38 PHOTODIODE
Contextual Info: Index by Type No. Type No. Name Page S 1087. .Si Photodiode Visible/Visible to IR Range, for General Photometry . . 22, 23 S 1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23

Contextual Info: Si photodiodes S5627-01, etc. Photodiodes molded into clear plastic packages These are Si photodiodes molded into clear plastic packages. Two types are available with sensitivity in the visible range and in the visible to near IR range. Two photosensitive areas of 1.3 x 1.3 mm and 2.4 × 2.8 mm are also available.

Contextual Info: Si photodiodes S5627-01, etc. Photodiodes molded into clear plastic packages These are Si photodiodes molded into clear plastic packages. Two types are available with sensitivity in the visible range and in the visible to near IR range. Two active areas of 1.3 x 1.3 mm and 2.4 × 2.8 mm are also available.

S1190-01

Contextual Info: MSaibtn G003b24 flOO • HPKJ PIN Silicon Photodiodes 1 Type No. Dimensional Outline (P.38)/ Window Material*1 S2216-01 S2839 /K Package O/K S1190-01 ® /L S1190-03 ® /K S1190-13 • /L ¿0.8 0.5 320 to 1060 900 0.57 0.55 ¿0.4 0.12 0.5 320 to 1000 800