S4797 Search Results

Contextual Info: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 • S2506-04 S4707-01 S5077

Contextual Info: Siフォトダイオード S5627-01など プラスチックパッケージのフォトダイオード 透明プラスチックパッケージのSiフォトダイオードです。可視域可視～近赤外域にそれぞれ感度をもつタイプを用意して

near IR photodiodes

Abstract: S8745-01 S8558
Contextual Info: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5

C2719

Abstract: S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118
Contextual Info: MHE'ìbCH 0 G03 b S l fi 3 T • HPKJ PHOTO ICs A photodiode and signal processing circuit are integrated. Photo ICs are intelligent light sensors consisting of a photodiode, signal processing circuit and signal output circuit. Molded in subminiature packages, these photo ICs are especially suited for

S5557

Abstract: S1087
Contextual Info: Si Photodiodes Visible/Visible to IR Range, for General Photometry Type No. Dimensional O utline (P.50 to 52)/ W indow M aterial "1 Active Area Size (mm) Effective Spectral Response Range Area X Peak Sensitivity W avelength X,p (mm2) (nm) (nm) 320 to 730

ir remote power meter

Abstract: spectrophotometer G1746
Contextual Info: Selection Guide Spectral Response Range nm 400 600 800 1000 200 _l I I I Feature Major Application Type No. 1200 I I 1 Listed : Pa9e Si Photodiodes 190 1100 190 1000 320 1100 320 UV to IR range, for precision photometry

SUD50N03-10

Abstract: S-47975
Contextual Info: SUD50N03-10 N-Channel Enhancement-Mode Transistor Product Summary VDS V 30 rDS(on) (W) ID (A) 0.010 @ VGS = 10 V "15 0.019 @ VGS = 4.5 V "12 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD50N03-10 S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)

S8558

Contextual Info: セレクションガイド 2014.5 Siフォトダイオード 紫 外 ~ 近 赤 外 域 放 射 線 に 対 応した ラ イ ン アップ Si PHOTODIODE S i P h o t o d i o d e Siフォトダイオード 紫 外 ∼ 近 赤 外 域 、放 射 線 に 対 応した ラ イ ン アップ

Contextual Info: Si photodiodes S5493-01, etc. Photodiodes molded into clear plastic packages These are Si photodiodes molded into clear plastic packages. Two types are available with sensitivity in the visible range and in the visible to near IR range. Two active areas of 1.3 x 1.3 mm and 2.4 × 2.8 mm are also available.

S3407

Abstract: S4036 S5533
Contextual Info: Dimensional Outlines Unit : m m O S1226-18BQ, etc. 0 S1190-01, etc. 0 S2386-18L # 5 4 -0 2 WI NDOW iy o *o¿ ^ 4 PS > 0 j o 0 S5531, S5532, S5533 0 S2216-01, etc. O S1190-13 2 ^ r> 4 t ü i- 4 fih ‘ :i i V* 4 6>cj • 0 1 : o -cP -l: • > *'<i Y", 5 K 1 y jtj ¡Inirosiln . it«- ijl.iss!

S3407

Abstract: SS493 S3407-01
Contextual Info: Si Photodiodes Visible/Visible to ÍR Range, for General Photometry Type No. Dimensional Outline (P.50 to 53)/ Window Material *1 Effective Active Area Active Spectral Response Range Peak Sensitivity Wavelength X Xp Photo Sensitivity S (A/W) - - . - • - He-Ne

near IR photodiodes

Abstract: S4011-06DS S2833-01 S4797-01 S5627-01
Contextual Info: Si photodiodes S5627-01, etc. Photodiodes molded into clear plastic packages These are Si photodiodes molded into clear plastic packages. Two types are available with sensitivity in the visible range and in the visible to near IR range. Two active areas of 1.3 x 1.3 mm and 2.4 × 2.8 mm are also available.

Contextual Info: Si photodiodes S5627-01, etc. Photodiodes molded into clear plastic packages These are Si photodiodes molded into clear plastic packages. Two types are available with sensitivity in the visible range and in the visible to near IR range. Two photosensitive areas of 1.3 x 1.3 mm and 2.4 × 2.8 mm are also available.

Contextual Info: Si Photodiodes Visible/Visible to IR Range, for General Photometry Dimensional Active Effective Outline (P.48,49)/ Package Area Size Active Area Window Material (mm) (mm2) Type No. S1087 A/ 1.3X1.3 1.6 S1133 © /V 2.4X2.8 6.6 S 1087-01 ® /R 1.3X1.3

GaP photodiode APD

Abstract: uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode
Contextual Info: Index by Type No Type No. Name Page S1087. .Si Photodiode Visible/Visible to IR Range, tor General Photometry . 22, 23 S1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23

SUB70N06-14

Abstract: SUP70N06-14
Contextual Info: SUP/SUB70N06-14 N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) 60 0.014 70a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N06-14 Top View N-Channel MOSFET SUP70N06-14 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

sup70n06-14

Contextual Info: Tem ic SUP/SUB70N06-14 S e m i c o n d u c t o r s N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V ) r DS(on) (£2) I d (A ) 60 0.014 70a D O T O -220A B o T O -263 r 1 Ji DRAIN connected to TAB G D S Top View O s G D S SUB70N06-14 Top View

S2833-01

Abstract: TH800 S3407 infrared circuit
Contextual Info: Silicon Photodiodes Visible/Visible to IR Range S 4797-01 Plastic mold S 1 133-14 Ceramic S 3407-01 *1 /R Plastic mold 1 .3 X 1 .3 1.6 2 .4 X 2 .8 6.6 32 0 to 1000 (c) 720 0.4 0.2 0.37 0.33 W in d o w m a te ria l, R: re s in c o a tin g , V: v is u a l-c o m p e n s a tio n filte r

SUB70N06-14

Abstract: SUP70N06-14
Contextual Info: SUP/SUB70N06-14 N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) 60 0.014 70a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N06-14 Top View N-Channel MOSFET SUP70N06-14 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

S3407

Contextual Info: • 4 2 2 ^ 0 ^ 0DD31.22 T3A ■ HPKJ Silicon Photodiodes Visible/Visible to IR Range Dimensional CM ie Type No. (P.41-43V Window Material"1 S1087 Package Effective Area Size Active Area Spectral Response Photo Sensitivity S Typ. (A/W) Peak . Sensitivity

IFR 840

Abstract: IFR 730 S2386
Contextual Info: Si Photodiodes ScM3Ctra> Packags Type No. ' : -i Hinge i, X I f - t»rm -‘hot-. füdk S6nsitiv‘iv Seaisitviiy S Ws\ E-lefigth Xp iiwh - to NEP iA/W) IPA? ' ÍPA) Time 1 Teiminai Shunt tr Capsjcitartee Resistance 101O 90% f i t Sh V-rí) V V M )V Vr =; tOonV

Contextual Info: Index by Type No. T yp e No Nam e Page S 1 0 8 7 . . Si P h o to d io d e V isible / V is ib le to IR R ange, T ype No S 1 3 3 6 -5 B K . Si P h o to d io d e (U V to IR R ange, fo r P re cisio n P h o to m e tr y . 14, 15

photodiode

Abstract: schottky photodiode uv photodiode, GaP GaP photodiode APD Si PIN PHOTODIODE uv photodiode Si apd photodiode 800 nm GaP photodiode PIN 38 PHOTODIODE
Contextual Info: Index by Type No. Type No. Name Page S 1087. .Si Photodiode Visible/Visible to IR Range, for General Photometry . . 22, 23 S 1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23

Contextual Info: Si photodiodes S5627-01, etc. Photodiodes molded into clear plastic packages These are Si photodiodes molded into clear plastic packages. Two types are available with sensitivity in the visible range and in the visible to near IR range. Two photosensitive areas of 1.3 x 1.3 mm and 2.4 × 2.8 mm are also available.