S4 7C Search Results

winbond 25080

Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
Contextual Info: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010

82S641

Abstract: 27C49 27S291 SS1203 N82S191N signetics 82hs641 665C/X-DELTA
Contextual Info: PROM/RPROM CROSS REFERENCE AMD WSI NATIONAL WSI AM 27C49 AM 27C191 AM 27C291 AM 27PS43 A M 2 7 S4 3 AM 27S43A A M 2 7 S4 5 A M 2 7 S4 9 A M 27S51 AM 27S51A AM 27S191 AM 27S291 W S57C49C W S57C291C W S57C291C W S57C43C W S57C43C W S57C43C W S5 7 C 4 5 W S57C49C

intel dq67 circuit diagram

Abstract: HYM72V12C756BLS4-P HYM72V12C756BLS4-S HYM72V12C756BS4-S RA12
Contextual Info: 128Mx72 bits PC100 SDRAM Registered DIMM with PLL, based on 64Mx4 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V12C756B L S4 Series DESCRIPTION The HYM72V12C756B(L)S4 Series are 128Mx72bits ECC Synchronous DRAM Modules. The modules are composed of thirty six

PC133 SDRAM registered DIMM 512MB hynix

Abstract: HYM72V12C736BLS4-H HYM72V12C736BLS4-K HYM72V12C736BS4-H HYM72V12C736BS4-K RA12 BYTE65
Contextual Info: 128Mx72 bits PC133 SDRAM Registered DIMM with PLL, based on 64Mx4 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V12C736B L S4 Series DESCRIPTION The HYM72V12C736B(L)S4 Series are 128Mx72bits ECC Synchronous DRAM Modules. The modules are composed of thirty six

QCA6

Contextual Info: IFC6410 Snapdragon S4 Pro Pico-ITX Single-Board Computer Processing, Power, and Performance • Qualcomm Snapdragon™ S4 Pro APQ8064 • Quad core Krait , 1.7GHz, 2MB L2 cache  2 GB on-board DDR3  Independent Clock Scaling Per Core Connectivity, Storage & I/O

PC133 SDRAM registered DIMM 512MB hynix

Contextual Info: 128Mx72 bits PC133 SDRAM Registered DIMM with PLL, based on 64Mx4 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V12C736B L S4 Series DESCRIPTION The HYM72V12C736B(L)S4 Series are 128Mx72bits ECC Synchronous DRAM Modules. The modules are composed of thirty six 64Mx4bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II stack package, one 2Kbit EEPROM in

Contextual Info: 128Mx72 bits PC100 SDRAM Registered DIMM with PLL, based on 64Mx4 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V12C756B L S4 Series DESCRIPTION The HYM72V12C756B(L)S4 Series are 128Mx72bits ECC Synchronous DRAM Modules. The modules are composed of thirty six 64Mx4bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II stack package, one 2Kbit EEPROM in

SE014

Abstract: 1SR71-40 1SR72-40 1SR73-40 S15S4 S15S6 S30S4A S30S6 S60S4 S60S6
Contextual Info: - 102 - ft B % it € Vr sm V S5S4 S5S4M S15 S4 S15 S6 S30S4A S30S6 S60 S4 S60S 6 SB05-03C SB0 5-03Q SB05-05CP SB0 5-05N P SB05-05P SB05-09 SB05-18M SB07-03C SB07-03N SB07-03P SB1 0-0 3A 2 SB1 0-0 3A 3 S B10- 04A 3 SBlO -05 SB10-05A2 SB10-05A3 SB10-05PCP

Contextual Info: SAMSUNG SEMICONDUCTOR INC US DE 1 7 ^ 4 1 4 2 . UUDblSb b I 56 KS54AHCT O h ò KS74AHCT D Quad 2~Port Registers FEATURES DESCRIPTION • Function, pin-out, speed and drive compatibility with S4/74ALS logic family • Low power consumption characteristic of CMOS

Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA Sb D e ”! T T 72S □ DD07S S4 DISCRETE/OPTO SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P0=12W(Min.) (f=470MHz, VCC=12.6V, Pi=3W) . 100% Tested for Load Mismatch Stress at All Phase

HD74LS48

Contextual Info: • BCD-to-Seven-Segm ent Decoder/Driver Internal Pull-up outputs The H D 7 4 L S4 8 features active high outputs for driving lamp buffers. This circuit has full ripple blanking input/output con­ trols and a lamp test input. Display patterns for B C D input

AS7C164-25PC

Abstract: AS7C164 AS7C164-12JC AS7C164-25JC 7C164-10
Contextual Info: Hitih-Perfornìanitì A S7C N S4 8K xS A S7C 164L CMOS SRAM & sV^'C KKx8 CMOS SRAM Common I/O IFEATURES Organization: 8,192 words x 8 bits Equal access and cycle times High speed Very fast 3 ns output enable access time - 10/12/15/20/25 ns address access time

L0145

Abstract: ba 4914 10IC 046J CO21 CL500 3afcd 4 digit 7 segment lcd
Contextual Info: UNCONTROLLED DOCUMENT PIN CDML cm2 CIH3 CIH4 PIN cmi cm2 2 7ft 71 7C S4 15 12F 12C 12E 121 CO s_J C i 7F 7G 7E 71 14 12ft 12B 12D cm4 OASOEf 3 S7 S6 S5 S9 16 11A UH 11C S15 4 8F 8C 8E 81 17 S13 S14 5 BA B1 BC S3 IS 6G m 6E,B 14G wra iw. 6 % SEJ w 19 5ft 51

Contextual Info: ^REVISIONS CHiMGll M A D E F ft& M D E S C R IP T IO N - £ 2 Z S4 5 9 Z . • J*- 2 2 . k q v 7 S c r/ /¿T 7 ^ / < u : : -7 M / } y '7C *=w . . ¿ s e a s / ? ■ • 7 7 .> * ■ ? * ■ ' % ¿ / / / 6 / 0 6 <£* • . r: ■ ./< V v v e t ^ H a v y / J

LCM151

Abstract: DP15 11010 dp11 LCM103 S4 9C DP10 2f 1001 11E11C
Contextual Info: LCM151 液晶显示模块 1 LCM151 RAM 对应显示笔段表 自左→右 8 为 1→15 位,DP 为小数点 S1-S8 见 LCD 图 D3 D2 D1 D0 ADDR D3 D2 S1 S2 S3 S4 00000 8A 8B 1F 1G 1E 1D 00001 9F 9G 1A 1B 1C DP1 00010 9A 9B 2F 2G 2E 2D 00011 10F 10G 2A 2B 2C

S4 9C

Abstract: 10D 9F 11010 2f 1001 S4 1C LCM103 LCM109 100-10 k1 d2s3
Contextual Info: LCM109 大型仪表控制柜液晶显示模块 1 LCM109 内存 RAM 对应显示笔段表 8.左→右为 1→10 位,P 为小数点,S 为三角箭头,K 为 D3 S4 1D 1DP 2D 2DP 3D 3DP 4D 4DP 5D 5DP 6D 6DP 7D 7DP 8D D2 S3 1E 1C 2E 2C 3E 3C 4E 4C 5E 5C 6E 6C 7E

S4B-01

Abstract: S5KC20R C 547c S3840 S1ZAK20 S1ZAK40 S1ZAL20 S1ZB20 S1ZB60 S2HB20Z
Contextual Info: - 138- » X m £ [s i # & iË * [S I # tt * B S n % S1 Z A K 2 0 S1 Z A K 4 0 S1ZAL20 S1ZA S4 S1ZB2 0 fr 7 c * t « tc S t® 7 G S1ZB6 0 S2H B20Z S2VB20 S2 V B 6 0 S3 B 4 Q - 0 2 ff« 7 C S3B40-04 S3B40-06 S3B40-08 S3B4 0 - 1 0 S3B4 0-12 •* >; 'J * '

Contextual Info: H ig h P e rin i 111,1n<c 64K X i A S 7 ' i(S4 M A I CM OS SR\M 64Kx Î2 .Synchronous hursi SH/1M Preliminary information Features • O rg a n iz a tio n : 6 5 ,5 3 6 w o rd s x 32 bits • A sy n c h ro n o u s o u tp u t enable co n tro l • F u lly s y n c h ro n o u s p ip e lin e d o p e ratio n

20D17

Abstract: 21d8
Contextual Info: TEXAS INSTR Ô9l>1725 T E X AS -CASIC/MEilORYD- I NSTR 77 D E| 0 ^ 1 7 5 5 <ASIC/MEMORY ADVANCE INFORMATION 262,144 DOMOöbl ^7C 4 0 86 1 D TM4256GP8, TM4256GV8 BY 8-BIT DYNAMIC RAM MODULES OCTOBER 1986 — REVISED NOVEMBER 1985 262,144 X 8 Organization V SINGLE-IN-LINE P A CK AG E*

C7555

Abstract: Y439 67C7555 67C7556 y846 S1481 75S110
Contextual Info: Monolithic Kl Memories 16-B it CMOS M ultiplier Slice 6 7C 7555 67C 7556 /// / / / / / / ////////////////////////////////////ADVANCE INFORMATION Ordering Information Features/ Benefits • TWos-complement, unsigned, or mixed operands PACKAGE TEMPERATURE 67C7555

IC SRAM 8K X 8

Abstract: MTSC2568 AS7CI64 CY7CI88 7405M dram cross reference CY7C18S 2kx8 sram cross reference AS19F TC55328
Contextual Info: h u lu s in A Industry mss rei ti t n l r Fast SRAM Vendor Cypress Code ASC Code Description Code ASC Code CY7CIÛ06 AS7C1028 25bK*4 HPD4368 AS7C11>4 8K*8 CY7C18S AS7CI64 8Kx8 HPD43258A AS7C256 32K.X8 Vendor Description CY7CI88 AS7C2 59 3:.Kx9 HPD432S9A AS7C259

Contextual Info: 23456784539A6BCDEF7C699345674F976BCDEF7C6 A2 !C"#3 A2 EC"#38 111  '  '

Contextual Info: 23456784539A6BCDEF7C699345674F976BCDEF7C6 A2 !C"#3 A2 EC"#38 11  '  '

Contextual Info: 23456784539A6BCDEF7C699345674F976BCDEF7C6 A2 C!"3 A2EC!"38 111 F8#$%&'9 &  &