S4260 Search Results

sub-micro CMOS technology

Contextual Info: VG26 V S4260D 262,144 x 16 - Bit CMOS Dynamic RAM VIS Description The device is CMOS Dynamic RAM organized as 262, 144-word x 16 bits. It is fabricated with an advanced submicro CMOS technology and advanced CMOS circuit design technologies. Fast Page Mode allows 512 random

Contextual Info: 426MHz SAW Filter 11.5MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. S42603 Part Number: LB S42603 www.sipatsaw.com Features � For RF SAW filter � Single-ended operation � Ceramic Surface Mount Package

tic 1060

Contextual Info: Silicon Power Rectifier S / R 4 2 Series ~H M h - »I A B C D F G H J K M R T AA -c— - L_ - Ir . t 1 - r r A < 1 ^ A M illim eter Minimum Maximum Minimum Maximum Notes AA B J I Dim. Inches _ _ _ _ 1.050 1.060 1.166 4.70 .640 .233 .745 .373

di 437

Abstract: 1n3921
Contextual Info: Silicon Power Rectifier S / R 4 2 Series Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R T AA Notes: 1. 3 / 8 - 2 4 U N F -3 A CC 1 1.050 - 4.30 .610 .213 - .344 .276 .465 - 1.060 1.166 4.70 .640 .233 .745 .373 .286

S4290

Abstract: 1N2437 IN139 s4205 1N1397 1N2426 1N2427 1N2436 1N3139 1N411B
Contextual Info: Series 42 I B B Avalanche Silicon Power Rectifiers E L E C T R IC A L C H A R A C T E R IS T IC S : M a x im u m A v e ra g e F o r w a r d C u rre n t, S in g le P h a se H a lf W a v e DC R a tin g a t 1 3 0 ° C . C a s e T e m p e ra tu re . 125 am p e re s

brown Boveri diode

Abstract: BROWN BOVERI N2427 N1403 1N4878 N3294 S4220 DIODE BBC N413B R42120
Contextual Info: BROWN BOVERI -FMC B R O W N , B O V E R I & CI E AKTIENGESELLSCHAFT MANNHEIM Silicon Power Rectifiers BBC G eschäftsbereich H albleiter und S trom rich te r Telefon 06206 503-1, T elex 0 4 -6 5 727 Postfach 200, D -6 84 0 Lam pertheim Brochure Order No.

Contextual Info: Silicon Power Rectifier S/R42 Series Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes A B C F G H J K M R T AA Notes: 1. 3 / 8 - 2 4 UNF-3A 2. Full threads within 2 1 /2 threads 3. Standard polarity; Stud Is Cathode Reverse polarity: Stud Is Anode

tdq-4d

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54260B MCM5L4260B S4260B Advance Information 256K x 16 CM O S Dynamic RAM Fast Page Mode - 2 CAS, 1 Write Enable The M CM 54260B is a 0.6n C M O S high-speed dynamic random acce ss memory. It is organized as 262,144 sixteen-bit words and fabricated with C M O S silicon-gate

S4250

Abstract: S4210 S42100 S42120 S42140 S4220 S4230 S4240 S4260 S4280
Contextual Info: Silicon Power Rectifier S / R 4 2 Series H Mh I :° > i Millimeter Minimum Maximum Minimum Maximum Notes AA B » Dim. Inches I -c — Notes: 1. 3 / 8 - 2 4 UNF-3A 2. Full threads within 2 1 /2 threads 3. 1 /4 - 2 8 UNF-2B 4. Reverse polarity: Stud is Anode

tic 1060

Contextual Info: Silicon Power Rectifier S / R 4 2 Series - Jx ;° > i \ Dim. Inches —I M I— I AA B » M illim eter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R T AA BB CC I -c — Notes: 1. 3 / 8 - 2 4 U N F-3A 2. Full threads within 2 1 /2 threads 3. Standard polarity: Stud is Cathode

S4250

Abstract: S4210 S42100 S42120 S42140 S4220 S4230 S4240 S4260 S4280
Contextual Info: Silicon Dower Rectifier s / R4-2 Series —I MI— <0>I M illimeter Minimum Maximum Minimum Maximum Notes AA B I Dim. Inches I A B C D F G H J K M R T AA - c - Notes: 1. 3 / 8 - 2 4 U N F-3A 2. Full threads within 2 1 /2 threads 3. 1 / 4 - 2 8 UNF-2B 4. Reverse polarity: Stud is Anode

gm71c4260a

Abstract: 71C4260
Contextual Info: GM71C4260A/AL S4260A/AL LG Semicon Co.,Ltd. 262,144 W ORDS x 16 BIT CMOS DYNAMIC RAM Description Features The G M 71C4260A/AL is the new generation dynamic RAM organized 262,144 x 16 bit. GM71C4260A/AI. has realized higher density, higher performance and various functions by utilizing

Contextual Info: HM514260A/AL-6R Series S4260A/AL-6R Series Preliminary 262,144-word x 16-bit Dynamic Random Access Memory |_|ITAPL-11 m Rev. 0.1 May. 31,1994 I I The Hitachi HM514260A/AL are CMOS dynamic RA M o rg a n iz e d as 2 6 2 ,1 4 4 -w o rd x 1 6 -b it. H M 514260A /A L have realized h igher density,

m514260c

Abstract: m514260 514260C
Contextual Info: HM514260C/CL Series S4260C/CL Series Preliminary 262,144-w ord x 16-bit Dynam ic Random Access M em ory L J I T A P I—11 • ■ ■ ■ The H ita c h i H M 5 I4 2 6 0 C /C I. arc C M O S d y n a m ic RAM o r g a n iz e d as 2 6 2 . 1 4 4 - w o r d x

42S4260

Abstract: 42S4260-70 NEC 42S4260-70
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT S4260, 424260 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE The ^S4260, 424260 are 262,144 words by 16 bits dynamic CMOS RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.

Contextual Info: Silicon Power Rectifier S / R 4 2 Series Dim. Inches H M |- Millimeter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R T AA BB CC 1. 3 / 8 - 2 4 U N F-3A 2. Full threads within 2 1 /2 threads 3. Standard polarity: Stud is Cathode Reverse polarity. Stud is Anode