S4266 Search Results

IRF140R

Abstract: IRF141R IRF142R IRF143R
Contextual Info: .Rugged Power MOSFETs File Number 2001 IRF140R, IRF141R IRF142R, IRF143R Avalanche Energy Rated N-Channel Power MOSFETs 27A and 24A, 60V-100V rDs on = 0.085fl and 0.110 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated ■ SOA is power-dissipation lim ited

Contextual Info: 3875081 G E SOLID STATE 01E 19856 D Optoelectronic Specifications- - HARRIS SEMICOND SECTOR 37E D • 4302271 aQ273ia b B Photon Coupled Isolator GE3020-GE3023

Contextual Info: 3875081 G E SOLID STATE 01E 19848 D Optoelectronic Specifications_ T - u /j. HARRIS SEMIC0N» SECTOR 37E D 430SS71 G02731Q 1 Photon Coupled Isolator C N Y 4 8 M IL L I M E T E R S SW 80L- Ga As Infrared Emitting Diode & NPN Silicon Photo-Darlington Amplifier

Contextual Info: 3875081 G E SO LID 01E STATE 1 9 8 10 D Optoelectronic Specifications_ HARRIS SEMICOND SECTOR 37E D H 4302271 0G27272 A E l HAS Photon Coupled Isolator H24B1-H24B2 Ga As Infrared Em itting Diode & NPN Silicon Photo-Darlington Amplifier The GE Solid State H24B series consists of a gallium arsenide

E3009

Contextual Info: HARRI S SEMI COND SECTOR 37E ]> M3 0 2 E 7 1 005731b S *HAS Optoelectronic Specifications_ T - W Photon Coupled Isolator G E 3 0 0 9 -G E 3 0 1 2 Ga As Infrared Em itting D iode & Light Activated T riac Driver T h e G E Solid S ta te G E 3 0 0 9 -G E 3 0 12 series consists o f a gallium arsenide

Contextual Info: 3875081 G E SO LID 01E STATE 19648 D Optoelectronic Specifications -• -t c q t -t è H A RR IS SEM-ICOND S E C T O R 37E D 43 0 5 27 1 G G 2 7 1 1 0 4 ■ HAS Infrared Emitter FSDl,F5D2,F5D3,F5E1, F5E2,F5E3 Gallium Aluminum Arsenide Infrared — Emitting Diode

Contextual Info: 3875081 G E SOLID STATE 01E optoelectronic S p e c ific a tio n s_ HARRIS SEMICOND SECTOR 19734 T W i-SS 37E D 43G2271 0 D 2 7 n t IH A S 7 Photon Coupled Isolator H11G3 Ga As Infrared Emitting Diode & NPN Silicon Darlington Connected P hototransistor

Contextual Info: HARRIS SENICOND SECTOR 37E » 4305E71 005715b b • HAS O p to ele c tro n ic S p e c ific a tio n s -T ‘- V / 'Í 3 Photon Coupled Isolator H11A520-H11A550 -H11A5100. Ga As Infrared E m itting D iode & NPN Silicon Photo-T ransistor The G E Solid State H 11A520, H 11A550 and H 11A 5100 consist of a

Contextual Info: 3875081 G E SO LID STATE 01E O p to electro n ic S p e c ific a tio n s _ 19798 - m HARRIS SEM IC O ND SECTOR 37E D *4302271 0Q272b0 1 - 7 I HAS 1mm Aperture Photon Coupled Interrupter Module H22L1,H22L2| SY M B O lj— M IN . T h e G E Solid S ta te H 2 2 L series is a gallium arsenide, infrared

IRFP250R

Abstract: irfp 250r IRFP251R p250a IRFP252R IRFP253R IRFP25
Contextual Info: Rugged Power MOSFETs_ IRFP250R, IRFP251R, IRFP252R, IRFP253R File Num ber 2016 Avalanche Energy Rated N-Channel Power MOSFETs 25A and 30A, 150V-200V rDs on = 0.0850 and 0.1200 N-CHANNEL ENHANCEMENT MODE Features: • ■ ■ ■ ■

Contextual Info: HARRIS SEMICOND SECTOR 37E D 4302571 Ü Ü S V at t . [HAS 2 Optoelectronic Specifications_ T -W I-7 Í M atched Emitter-Detector Pair H23L1 •vu. A B Bi The G E Solid State H23L1 is a matched emitter-detector pair which consists o f a gallium arsenide, infrared emitting diode and a

Contextual Info: 387 5 0 8 1 0 1E 19736 STATE G E SOLID Optoelectronic Specifications HARRIS SEMICOND SECTOR 37E D T'W-ZS B 4302271 0 D 2 ? n a 0 • HAS Photon Coupled Isolator H11G45-H11G46 Ga As Infrared E m itting D iode & N P N Silicon Darlington Connected Phototransistor

Contextual Info: 3875081 G E SOLID STATE 01E 19738 Optoelectronic Sp e c ific atio n s_ H A R R IS S EM IC O N D 37E SECTOR D 430S271 DD272G G S 0 c -T - 4 1 -8 7 Photo Coupled Isolator H11J1- H11J5 Ga As Infrared Em itting Diode & Light Activated T riac Driver The GE Solid State HI IJ series consists of a gallium arsenide infrared

Contextual Info: 3875081 G E S O L ID 01E STATE 19 79 4 Optoelectronic Specifications _ H A RR IS SEMICOND SECTOR 37E T -4 1 -7 3 D 4302271 002725b 1mm Aperture Photon Coupled Interrupter Module H22B1 ,H22B2 ,H22B3 T he G E Solid S tate H22B In terru p ter M odule is a gallium arse­

Contextual Info: HA RR IS S E M I C O N D S E CT OR 4 3 D 2 2 7 1 D 0 S 7 3 Q S 2 • HAS 37E D Optoelectronic S p e c ific a tio n s _ T-4I-S3 AC Input Photon Coupled Isolator CNY35 — i.— -1 -j_ ■rtAA 3 1» 1 c ITOPV1EWI S 4 S \ G a A s Infared Em itting D iode s & N P N Silicon Photo-Transistor

S4266

Contextual Info: 3875081 01E G E S O L I D ST AT E 19690 D uptqeiectronlc Specifications_ 'P - U HA RRIS SEMICOND SECTOR 37E D r '7 _ i 4302271 0G271S2 T I B HAS PHOTON C O U PLED C U R R E N T T H R E S H O L D SWITCH H 11A 10 Ga As In frared E m itting D iode & NPN Silicon Photo-T ransistor

42568

Abstract: ST 42568 C4256 A1725 42568 wp TMS4256 C4257 k a1725 THCT4502 NCP1520
Contextual Info: TEXAS 0D7tôôl IN STR , 3 T 5SE Single 5-V Power Supply — 5 % Tolerance Required for TM S4256-8 — 10% Tolerance Required for TM S4256-10, -12, -15, and TM S4257-10, -12, -15 A8[ 'D [ w [ RAS E A0[ A2[ A1[ JE D E C Standardized Pinouts Performance Ranges:

Contextual Info: H A R R IS SEM IC O N D SECTOR 3?E V m 43QE271 G027172 4 I HAS Optoelectronic Specifications Photon C oupled Isolator H11B1,H11B2,H11B3 S Y Ï.B O L - M IN Ga As Infrared E m ittin g D iode & NPN Silicon P hoto-D arlington A m plifier The GE Solid State H 11B 1, H 11B2 and H 11B3 are gallium arsenide,

Contextual Info: 3875081 G E SOLID STATE 01E 19698 D Optoelectronic Specifications- T-V/-S3 HARRIS SEIUCOND SECTOR 37E J> m 4302271 0D271bD fl • HAS A C Input Photon Coupled Isolator H11AA1-H11AA4 Ga As Infrared E m itting D iodes & NPN Silicon P h o to-T ransistor

CNY47/47A

Contextual Info: 3875081 G E S O L ID STATE Optoelectronic Specifications_ H A R R IS S EfllC O N D S EC T O R 01E 3?E D B 4302571 19846 D G0e73afl T-W I • HAS 3 Photon Coupled Isolator C N Y47,CN Y47A Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor INCH

Contextual Info: 3875081 G E SO LID STATE 01E 1 9 8 00 Optoelectronic Specifications_ T -4 /-7 / HARRIS SEMICOND SECTOR 37E Matched Emitter-Detector pair H23A1-H23A2 D 4302571 G Q 275b2 E M IT T E R •BLACK} T he G E Solid S ta te H23A1 is a m atched em itter-detector pair

IRF830R

Abstract: diod 200 ampere 600 volt IRF831R IRF832R IRF833R IRF83Q
Contextual Info: _Rugged Power MOSFETs File Number 2021 IRF830R, IRF831R, IRF832R, IRF833R Avalanche Energy Rated N-Channel Power MOSFETs 4.0A and 4.5A, 450V-500V rDs on = 1,5Q and 2.00 N -C H A N N E L E N H A N C E M E N T M O D E D Features: • Single pulse avalanche energy rated

I22R

Abstract: IRFF122R IRFF120R IRFF121R IRFF123R IRFFI22R
Contextual Info: Rugged Power MOSFETs_ IRFF120R, IRFF121R, IRFFI22R, IRFF123R File Num ber 2023 Avalanche Energy Rated N-Channel Power MOSFETs 5.0A and 6.0A, 60V-100V ib s o n = 0.300 and 0.400 N-CHANNEL ENH ANCEM ENT M ODE Feature«: • Single pulse avalanche energy rated

TRANSISTOR CD 2897

Abstract: GFH601 k 2897 transistor 340 opto isolator 100J1
Contextual Info: HARRIS SEMICOND MÊimmmmtiÈÊmâiiim SECTOR 37E D B 430SS71 DG2732b S E l HAS Optoelectronic Speciticatio n s. Photon Coupled Isolator GFH601 Ga As Solid State Lamp & NPN Silicon Photo-Transistor The G E Solid State GFH601 consists of a gallium arsenide infrared