SAMSUNG ETA Search Results
SAMSUNG ETA Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SAMSUNG ELECTRONICS INC b4E ]> • GG1472D AIS «SI1GK 7WIHE KMM532512W/WG DRAM MODULES 512K.X32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e range: The Samsung KMM532512W is a 512K bit x 3 2 Dynam ic RAM high density memory module. The Samsung |
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GG1472D KMM532512W/WG KMM532512W 40-pin 72-pin 22jiF 130ns 150ns 180ns | |
870Q
Abstract: mrs 751
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KMM466S203CT KMM466S203CT 144pin 2Mx64 400mil 144-pin 870Q mrs 751 | |
Contextual Info: Preliminary KMM364C124BJ DRAM MODULE KMM364C124BJ Fast Page Mode 1Mx64 DRAM DIMM based on 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C124BJ is a 1M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364C124BJ consists of four CMOS |
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KMM364C124BJ KMM364C124BJ 1Mx64 1Mx16, 1Mx16bit 42-pin 400mil 48pin | |
Contextual Info: KMM366S400BTN NEW JEDEC SDRAM MODULE KMM366S400BTN SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx4, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S400BTN is a 4M bit x 64 Synchronous Performance range Dynamic RAM high density memory module. The Samsung |
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KMM366S400BTN KMM366S400BTN 4Mx64 400mil 168-pin KMM366S400BTN-G8 KMM366S400BTN-G0 KMM366S400BTN-G2 | |
KMM366S204BTN-G0
Abstract: KMM366S204BTN-G2 cdq40 KMM366S204BTN
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KMM366S204BTN KMM366S204BTN 2Mx64 1Mx16, 400mil 168-pin KMM366S204BTN-G8 KMM366S204BTN-G0 KMM366S204BTN-G2 cdq40 | |
samsung power module
Abstract: KMM374S400BTN-G2 ADQ37 71b4
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KMM374S400BTN KMM374S400BTN 4Mx72 400mil 168-pin KMM374S400BTN-G8 KMM374S40OBTN-G0 KMM374S400BTN-G2 samsung power module ADQ37 71b4 | |
Contextual Info: KMM372V122CJ/CT DRAM MODULE KM M372V122CJ/CT Fast Page Mode 1Mx72 DRAM DIMM with QCAS, 1K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • Performance Range: The Samsung KMM372V122C is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372V122C consists of sixteen CMOS |
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KMM372V122CJ/CT M372V122CJ/CT 1Mx72 KMM372V122C KMM372V122C-7 300mil 110ns 130ns | |
KM44V16104BKContextual Info: DRAM MODULE KMM366F160 8 0BK2 KMM366F160(8)0BK2 EDO Mode without buffer 16M x 64 DRAM DIMM Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F160(8)0BK2 is a 16Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F160(8)0BK2 consists of sixteen CMOS 16Mx4bits |
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KMM366F160 16Mx4, 16Mx64bits 16Mx4bits 400mil 168-pin KM44V16104BK | |
Contextual Info: SAMSUNG ELECTR ONI CS INC b?E D • 7^4142 KMM5321000BV/BVG SHGK DDlSllb DRAM MODULES 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • P erform ance range: The Samsung KMM5321000BV is a 1M b its x 32 Dynam ic RAM high d e n sity m em ory m odule. The S am sung |
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KMM5321000BV/BVG 1Mx32 KMM5321000BV 20-pin 72-pin 22/iF 110ns KMM5321000BV-7 130ns | |
Contextual Info: 1 About This Data Sheet This data sheet provides a technical overview of the Samsung 21164 Alpha microprocessor called the 21164 , including: • Functional units • Signal descriptions • External interface • Internal processor register (IPR) summary |
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ib4142 | |
KMM374S1620AT-G0Contextual Info: NEW JEDEC SDRAM MODULE KMM374S1620AT KMM374S1620AT SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 16Mx4,4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S1620AT is a 16M bit x 72 Synchronous - Performance range |
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KMM374S1620AT KMM374S1620AT 16Mx72 16Mx4 400mil 168-pin KMM374S1620AT-G0 | |
KMM374S1623AT-G0
Abstract: KM48S8030AT
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KMM374S1623AT KMM374S1623AT 16Mx72 400mil 168-pin 0037S KMM374S1623AT-G0 KM48S8030AT | |
Contextual Info: NEW JEDEC SDRAM MODULE KMM374S1600AT KMM374S1600AT SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 16Mx4, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S1600AT is a 16M bit x 72 Synchronous - Performance range |
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KMM374S1600AT KMM374S1600AT 16Mx72 16Mx4, 400mil 168-pin | |
KMM366S803AT-G2
Abstract: 30H22
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KMM366S803AT KMM366S803AT 8Mx64 400mil 168-pin KMM366S803AT-G8 KMM366S803AT-G0 KMM366S803AT-G2 30H22 | |
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KMM377S1620BT1-GHContextual Info: Preliminary KMM377S1620BT1 SDRAM MODULE KMM377S1620BT1 SDRAM DIMM Intel 1.0 ver. Base 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S1620BT1 is a 16M bit x 72 Synchro |
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KMM377S1620BT1 KMM377S1620BT1 16Mx72 16Mx4, 16Mx4 400mil 18-bits 24-pin KMM377S1620BT1-GH | |
KM48C8000AS
Abstract: KM48c8100A KM48c8100as
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KMM364C803AK/AS KMM364C883AK/AS KMM364C803AK/AS KMM364C883AK/AS 8Mx64 KMM364C80 400mil 48pin 168-pin KM48C8000AS KM48c8100A KM48c8100as | |
Contextual Info: Preliminary KMM377S2857AT2 SDRAM MODULE KMM377S2857AT2 SDRAM DIMM Intel 1.1 ver. Base 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung KMM377S2857AT2 is a 128M bit x 72 Syn |
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KMM377S2857AT2 KMM377S2857AT2 128Mx72 128Mx4, KMM377S2857AT2-GH 100MHz 128Mx4 KMM377S2857AT2-GL | |
44v16104Contextual Info: KMM366F1680AK KMM366F1600AK DRAM MODULE KMM366F1680AK & KMM366F1600AK EDO Mode without buffer 16Mx64 DRAM DIMM based on 16Mx4, 8K & 4K Refresh, 3.3V G ENER AL DESCRIPTIO N FEATURES The Samsung KMM366F168 0 0AK is a 16M bit x 64 Dynamic RAM high density memory module. The |
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KMM366F1680AK KMM366F1600AK KMM366F1680AK KMM366F1600AK 16Mx64 16Mx4, KMM366F168 16Mx4bit 400mil 44v16104 | |
Contextual Info: DRAM MODULE KMM372C120CJ/CT KMM372C120CJ/CT Fast Page Mode 1Mx72 DRAM DIMM with ECC, 1K Refresh, 5V G EN E R A L DESCRIPTION FEATURES The Samsung KMM372C120C is a 1M bit x 72 Dynamic RAM high density memory module. The • Performance Range: tRAC tCAC 50ns |
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KMM372C120CJ/CT KMM372C120CJ/CT 1Mx72 KMM372C120C 300mil 48pin | |
Contextual Info: DRAM MODULE KMM364V120CJ/CT KMM364V120CJ/CT Fast Page Mode 1Mx64 DRAM DIMM, 1K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Sam sung KM M 364V120C is a 1M bit x 64 D ynam ic RAM high density m em ory module. The Samsung KM M 364V120C consists of sixteen CMOS |
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KMM364V120CJ/CT KMM364V120CJ/CT 1Mx64 364V120C KMM364V120C 110ns 130ns 48pin | |
Contextual Info: KMM366F400BK KMM366F41OBK DRAM MODULE K M M 366F400B K & KM M 366F410BK ED O Mode w ithout buffer 4Mx64 DRAM DIMM based on 4Mx4, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40 1 0BK is a 4M bit x 64 Dynamic RAM high density memory module. The |
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KMM366F400BK KMM366F41OBK 366F400B 366F410BK 4Mx64 KMM366F40 300mil 168-pin | |
Contextual Info: KMM372V400BK/BS KMM372V41OBK/BS DRAM MODULE KMM372V400BK/BS / KMM372V41 OBK/BS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES • Part Identification The Samsung KMM372V40 1 0B is a 4M bit x 72 Dynam ic RAM high density m em ory module. The |
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KMM372V400BK/BS KMM372V41OBK/BS KMM372V400BK/BS KMM372V41 4Mx72 KMM372V40 KMM372V400BK cycles/64ms KMM372V400BS | |
Contextual Info: KMM372V400BK/BS KMM372V41OBK/BS DRAM MODULE KMM372V4Q0BK/BS / KMM372V41 OBK/BS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES • Part Identification The Samsung KMM372V40 1 0B is a 4M bit x 72 D ynam ic RAM high density m em ory module. The |
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KMM372V400BK/BS KMM372V41OBK/BS KMM372V4Q0BK/BS KMM372V41 4Mx72 KMM372V40 48pin 168-pin KMM372V400BK | |
Contextual Info: KM M5361000B1 /B1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5361000B1 is a 1M bits x 36 Dynamic RAM KMM5361000B1-6 tR A C tcA c tn c 60ns 15ns 110ns high density memory module. The Sam sung |
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M5361000B1 KMM5361000B1 KMM5361000B1 KMM5361000B1-6 KMM5361000B1-7 KMM5361000B1-8 110ns 130ns 150ns 20-pin |