SAMSUNG GREASE Search Results

6N60

Abstract: SSM6N55
Contextual Info: _98D_0 5319 - 7964.142 SAMSUNG SEMICONDUCTOR INC. DE I TTtiM m E Q0QS3n 3 | ‘ ' . D _ 7 ~ -3 7 ^ / 2 N-CHANNEL PO WER MOSFETS SSM6N55/6N60 FEATURES Low Ros on at high voltage Improved inductive ruggedness Excellent high voltage stability Fast switching times

15N60

Abstract: K 15N60
Contextual Info: Tfl SAMSUNG SEMICO NDUCT OR INC ^ r E SSM15N55/15N60 SSH15N55/15N60 OODSaiD T- Ä ^ 4 NNELm i POWER MOSFETS - e iÄ ” Preliminary Specifications PRODUCT SUMMARY 600 Volt, 0.5 Ohm SFET Part Number Vos RDS on SSM15N55 550V 0.5Q 15A SSM15N60

Contextual Info: IRF740/741/742/743 IRFP340/341/342/343 SAMSUNG ELECTRONICS INC N-CHANNEL POWER MOSFETS SÎ16K b?E D FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance

samsung 822

Abstract: IRFS820 N 821 Diode IRFS821 IRFS822 IRFS823 GG173
Contextual Info: SAMSUNG ELECTRONICS INC b?E ]> • 7=^4142 001737^ bib I suste N-CHANNEL POWER MOSFETS IRFS820/821/822/823 FEATURES TO-220F • Lower R ds ON • Improved inductive ruggedness Fast switching tim es Rugged polysilicon gate cell structure Lower input capacitance

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • TlbMlMS Ü01BM2Q 5^6 ■ SMGK P-CHANNEL POWER MOSFETS IRFS9640/9641 /9642/9643 FEATURES • • • • • • • TO-220F Lower RDs ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

IRFS645

Abstract: IRFS644
Contextual Info: SAMSUNG ELECTRONICS INC b?E D IRFS644/645 • 71b41M2 001735^ Ô2Ô « S M Ò K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance

IRF644

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 5 G0172flfl ?4fl IRF644/645 IRFP244/245 SH6K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

IRFP250

Abstract: 1RFP250 IRFP253 RIKC IRFP251 IRFP252 irfp250 mosfet samsung MOSFET
Contextual Info: 7 9 6 4 142 SAMSUNG SEMICONDUCTOR I NC ]>e "| T T b M m S DGDSlflM b | - N-CHANNEL POWER M OSFETS IRFP250/251Z252/253 FEATURES • Low RDS on N • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Low input capacitance

IRFS730

Abstract: 733 mosfet 731 MOSFET IRFS731 IR 733 IRFS732 IRFS733 0D173
Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7^4142 IRFS730/731/732/733 DDlTBbl 777 «SPIC K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R ds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7Tbm42 GD12174 71b «SflG K N-CHANNEL POWER MOSFETS IRF620/621/622/623 FEATURES • • • • • • • Lower R d s ON Improved Inductive ruggedness Fast switching times R ugged polysilicon gate cell structure Lower input capacitance

z24 mosfet

Abstract: IRF9Z25 IRF9Z20 IRF9Z22 IRF9Z24
Contextual Info: SAMSUNG ELECTRONICS INC b4E D inrv£.¿m¿.¿s IRF9Z20/Z22 • 7Tb4142 DülSSTH 4^5 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • SMGK TO-220 Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

irfp321

Abstract: IRFP320 IRFP323 IRFP322 mosfet p.321 samsung tv
Contextual Info: "OT^JT-" 7964 142 SAMSUNG SEMI CONDUCTOR. .INC 98D 05189 D e | TlbMlMS DOOSlflT S I N-CHANNEL POWER MOSFETS •' IRFP320/321/322/323 FEATURES • LowRDS{on • • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

IRF150

Abstract: IRF150 MOSFET IRF150 To3 package IRF-150 IRF150 on semi
Contextual Info: 7964142 SAMSUNG SEMICONDUCTOR Tfl D e J 7Tti414E DD0SDÛ4 a f 98 D 0 5084 INC L' D T -SVIli N-CHANNEL POWER MOSFETS IRF150/151/152/153 FEATURES Low RDS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Low input capacitance

fu320

Abstract: u322 IRFR322 i FU320 322 mosfet tag t 2512 u320 diode 160Tl IRFR320
Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7^4142 IRFR320/322 IRFU320/322 N-CHANNEL POWER MOSFET FEATURE • • • • • • • QG1235G 044 ■ SflGK D-PACK Lower R ds <0N Improved inductive ru gged ess Fast switching time R ugged polysllic on gate cell structure

irfz12

Contextual Info: SAMSUNG ELECTRONICS INC b4 E D 7 ^ 4 1 4 2 0012435 71T • SMGK N-CHANNEL POWER MOSFETS IRFZ14/15 IRFZ10/12 FEATURES • • • • • • • TO -220 Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 ^ b 4 m 2 GG17273 217 «SPIGK N-CHANNEL POWER MOSFETS IRF614/615 FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance

DIODE S3c

Abstract: ssm10n70
Contextual Info: SAMSUNG SEM ICO NDUCTOR INC *- SSM10N70 SSH10N70 >.U DE I T T t m M S □□OSB'it. □ W ~ N-CHANNEL * - • r * POWER MOSFETS V - ^ - IS t' Preliminary Specifications PRODUCT SUMMARY 700 Volt, i.a O h m SFET Part Number Vos Rosion Id SSM10N70 700V 1.00

SSR2955

Contextual Info: SAMSUNG ELECTRONICS INC fc»ME D • 7=^142 □ Q lE M 'll P-CHANNEL POWER MOSFET SSR2955/U2955 FEATURES • • • • • • • • 54Ô BiStlGK D-PACK Lower FtDS on Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure

ssm8n55

Abstract: SSM8N60
Contextual Info: •7964142 Tf l ' DE I 7Tbm4S SAMSUNG SEMICONDUCTOR □ □ 0 S 3 2 ci h -V 98D IN C 05329 _ D ' _ : . ' 7 - - J 7 - / 3 -• N-CHANNEL POWER MOSFETS SSM8N55/8N60 FEATURES • • • • • .• • • • Low Ros<on at high voltage

IRFS830

Abstract: IRFS831 IRFS832 IRFS833 rectifier 832
Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7^1,4142 0G173Ô4 Tñ3 ■ SMGK N-CHANNEL POWER MOSFETS IRFS830/831/832/833 FEATURES • Low er R ds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged poiysilicon gate cell structure Lower input capacitance

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7 S b 4 1 4 B DQlSlMt. ÒSI ■ SM6K N-CHANNEL IRF510/511 /512/513 POWER MOSFETS FEATURES • Lower R d s <on > • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

Contextual Info: 7964142 SAMSUNG S E M I C O N D U CTOR INC 98D 05204 N-CHANNEL ’ POWER MOSFETS , IRFP350/351/352/353 Tfl ImF FEATURES ^4145 □ G OSE □ 4 Ô Low Ros<on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Low input capacitance

IRF9521

Abstract: f9520 IRF9520 Samsung
Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 71134142 DP12S4Ô 5 0 5 « S I I G K P-CHANNEL POWER MOSFETS IRF9520/9521/9522/9523 FEATURES • • • • • • • Lower Rqs o n Improved inductive ruggedness Fast sw itching tim es Rugged poiysilicon gate cell structure

Contextual Info: SAMSUNG ELECTRONICS INC 7 ^ 4 1 4 2 GÜ1220B 4GG « S U G K N-CHANNEL POWER MOSFETS bME D IRF710/711/712/713 FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysillcon gate cell structure Lower input capacitance