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    6N60

    Abstract: SSM6N55
    Contextual Info: _98D_0 5319 - 7964.142 SAMSUNG SEMICONDUCTOR INC. DE I TTtiM m E Q0QS3n 3 | ‘ ' . D _ 7 ~ -3 7 ^ / 2 N-CHANNEL PO WER MOSFETS SSM6N55/6N60 FEATURES Low Ros on at high voltage Improved inductive ruggedness Excellent high voltage stability Fast switching times


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    SSM6N55/6N60 SSM6N55 SSM6N60 6N60 PDF

    15N60

    Abstract: K 15N60
    Contextual Info: Tfl SAMSUNG SEMICO NDUCT OR INC ^ r E SSM15N55/15N60 SSH15N55/15N60 OODSaiD T- Ä ^ 4 NNELm i POWER MOSFETS - e iÄ ” Preliminary Specifications PRODUCT SUMMARY 600 Volt, 0.5 Ohm SFET Part Number Vos RDS on SSM15N55 550V 0.5Q 15A SSM15N60


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    SSM15N55/15N60 SSH15N55/15N60 SSM15N55 SSM15N60 SSH15N55 SSH15N60 15N60 K 15N60 PDF

    Contextual Info: IRF740/741/742/743 IRFP340/341/342/343 SAMSUNG ELECTRONICS INC N-CHANNEL POWER MOSFETS SÎ16K b?E D FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance


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    IRF740/741/742/743 IRFP340/341/342/343 F740/IRFP340 IRF741 /IRFP341 F742/IRFP342 F743/IRFP343 IRF740 IRFP340 IRF741 PDF

    samsung 822

    Abstract: IRFS820 N 821 Diode IRFS821 IRFS822 IRFS823 GG173
    Contextual Info: SAMSUNG ELECTRONICS INC b?E ]> • 7=^4142 001737^ bib I suste N-CHANNEL POWER MOSFETS IRFS820/821/822/823 FEATURES TO-220F • Lower R ds ON • Improved inductive ruggedness Fast switching tim es Rugged polysilicon gate cell structure Lower input capacitance


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    IRFS820/821/822/823 to-220f IRFS820/821Z822/823 IRFS820 IRFS821 IRFS822 IRFS823 samsung 822 N 821 Diode GG173 PDF

    Contextual Info: SAMSUNG ELECTRONICS INC b4E D • TlbMlMS Ü01BM2Q 5^6 ■ SMGK P-CHANNEL POWER MOSFETS IRFS9640/9641 /9642/9643 FEATURES • • • • • • • TO-220F Lower RDs ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


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    01BM2Q IRFS9640/9641 O-220F IRFS9640 IRFS9641 IRFS9642 IRFS9643 PDF

    IRFS645

    Abstract: IRFS644
    Contextual Info: SAMSUNG ELECTRONICS INC b?E D IRFS644/645 71b41M2 001735^ Ô2Ô « S M Ò K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance


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    IRFS644/645 to-220F IRFS644/645 IRFS644 IRFS645 GG173h3 VIRFS644 PDF

    IRF644

    Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 5 G0172flfl ?4fl IRF644/645 IRFP244/245 SH6K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


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    G0172flfl IRF644/645 IRFP244/245 IRF644/IRFP244 IRF645/IRFP245 IRF644 IRFP244 IRF645 IRFP245 IRF644 PDF

    IRFP250

    Abstract: 1RFP250 IRFP253 RIKC IRFP251 IRFP252 irfp250 mosfet samsung MOSFET
    Contextual Info: 7 9 6 4 142 SAMSUNG SEMICONDUCTOR I NC ]>e "| T T b M m S DGDSlflM b | - N-CHANNEL POWER M OSFETS IRFP250/251Z252/253 FEATURES • Low RDS on N • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Low input capacitance


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    IRFP250/251/252/253 IRFP250 RFP251 IRFP252 IRFP253 IRFP251 71t414ri 1RFP250 RIKC irfp250 mosfet samsung MOSFET PDF

    IRFS730

    Abstract: 733 mosfet 731 MOSFET IRFS731 IR 733 IRFS732 IRFS733 0D173
    Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7^4142 IRFS730/731/732/733 DDlTBbl 777 «SPIC K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R ds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance


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    7Rb414B IRFS730/731/732/733 to-220f IRFS730/731 /732Z733 IRFS730 IRFS731 IRFS732 IRFS733 733 mosfet 731 MOSFET IR 733 0D173 PDF

    Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7Tbm42 GD12174 71b «SflG K N-CHANNEL POWER MOSFETS IRF620/621/622/623 FEATURES • • • • • • • Lower R d s ON Improved Inductive ruggedness Fast switching times R ugged polysilicon gate cell structure Lower input capacitance


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    7Tbm42 GD12174 IRF620/621/622/623 IRF620 IRF621 IRF622 IRF623 PDF

    z24 mosfet

    Abstract: IRF9Z25 IRF9Z20 IRF9Z22 IRF9Z24
    Contextual Info: SAMSUNG ELECTRONICS INC b4E D inrv£.¿m¿.¿s IRF9Z20/Z22 7Tb4142 DülSSTH 4^5 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • SMGK TO-220 Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


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    IRF9Z20/Z22 7Tb4142 122T4 IRF9Z20 IRF9Z24 IRF9Z22 IRF9Z25 z24 mosfet PDF

    irfp321

    Abstract: IRFP320 IRFP323 IRFP322 mosfet p.321 samsung tv
    Contextual Info: "OT^JT-" 7964 142 SAMSUNG SEMI CONDUCTOR. .INC 98D 05189 D e | TlbMlMS DOOSlflT S I N-CHANNEL POWER MOSFETS •' IRFP320/321/322/323 FEATURES • LowRDS{on • • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


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    IRFP320/321/322/323 IRFP320 IRFP321 IRFP322 IRFP323 00GS435 irfp321 mosfet p.321 samsung tv PDF

    IRF150

    Abstract: IRF150 MOSFET IRF150 To3 package IRF-150 IRF150 on semi
    Contextual Info: 7964142 SAMSUNG SEMICONDUCTOR Tfl D e J 7Tti414E DD0SDÛ4 a f 98 D 0 5084 INC L' D T -SVIli N-CHANNEL POWER MOSFETS IRF150/151/152/153 FEATURES Low RDS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Low input capacitance


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    7Tti414E IRF150/151/152/153 IRF150 IRF151 IRF152 IRF153 00GS435 IRF150 MOSFET IRF150 To3 package IRF-150 IRF150 on semi PDF

    fu320

    Abstract: u322 IRFR322 i FU320 322 mosfet tag t 2512 u320 diode 160Tl IRFR320
    Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7^4142 IRFR320/322 IRFU320/322 N-CHANNEL POWER MOSFET FEATURE • • • • • • • QG1235G 044 ■ SflGK D-PACK Lower R ds <0N Improved inductive ru gged ess Fast switching time R ugged polysllic on gate cell structure


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    Q1235G IRFR320/322 IRFU320/322 IRFR320/U320 IRFR322/U322 loS-20W fu320 u322 IRFR322 i FU320 322 mosfet tag t 2512 u320 diode 160Tl IRFR320 PDF

    irfz12

    Contextual Info: SAMSUNG ELECTRONICS INC b4 E D 7 ^ 4 1 4 2 0012435 71T • SMGK N-CHANNEL POWER MOSFETS IRFZ14/15 IRFZ10/12 FEATURES • • • • • • • TO -220 Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


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    IRFZ14/15 IRFZ10/12 IRFZ10 IRFZ14 IRFZ12 IRFZ15 irfz12 PDF

    Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 ^ b 4 m 2 GG17273 217 «SPIGK N-CHANNEL POWER MOSFETS IRF614/615 FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance


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    GG17273 IRF614/615 IRF614 IRF615 IBF615 PDF

    DIODE S3c

    Abstract: ssm10n70
    Contextual Info: SAMSUNG SEM ICO NDUCTOR INC *- SSM10N70 SSH10N70 >.U DE I T T t m M S □□OSB'it. □ W ~ N-CHANNEL * - • r * POWER MOSFETS V - ^ - IS t' Preliminary Specifications PRODUCT SUMMARY 700 Volt, i.a O h m SFET Part Number Vos Rosion Id SSM10N70 700V 1.00


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    SSM10N70 SSH10N70 SSH10N70 DIODE S3c PDF

    SSR2955

    Contextual Info: SAMSUNG ELECTRONICS INC fc»ME D • 7=^142 □ Q lE M 'll P-CHANNEL POWER MOSFET SSR2955/U2955 FEATURES • • • • • • • • 54Ô BiStlGK D-PACK Lower FtDS on Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure


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    SSR2955/U2955 SSR2955 SSR2955/U2955 SSU2955 PDF

    ssm8n55

    Abstract: SSM8N60
    Contextual Info: •7964142 Tf l ' DE I 7Tbm4S SAMSUNG SEMICONDUCTOR □ □ 0 S 3 2 ci h -V 98D IN C 05329 _ D ' _ : . ' 7 - - J 7 - / 3 -• N-CHANNEL POWER MOSFETS SSM8N55/8N60 FEATURES • • • • • .• • • • Low Ros<on at high voltage


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    SSM8N55/8N60 SSM8N55 SSM8N60 00GS435 SSM8N60 PDF

    IRFS830

    Abstract: IRFS831 IRFS832 IRFS833 rectifier 832
    Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7^1,4142 0G173Ô4 Tñ3 ■ SMGK N-CHANNEL POWER MOSFETS IRFS830/831/832/833 FEATURES • Low er R ds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged poiysilicon gate cell structure Lower input capacitance


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    71b4m2 0G173A4 IRFS830/831/832/833 IRFS830 IRFS831 IRFS832 IRFS833 Vos-400V\ T-253C rectifier 832 PDF

    Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7 S b 4 1 4 B DQlSlMt. ÒSI ■ SM6K N-CHANNEL IRF510/511 /512/513 POWER MOSFETS FEATURES • Lower R d s <on > • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


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    IRF510/511 IRF510 IRF51 IRF513 IRF511 IRF512 G012150 PDF

    Contextual Info: 7964142 SAMSUNG S E M I C O N D U CTOR INC 98D 05204 N-CHANNEL ’ POWER MOSFETS , IRFP350/351/352/353 Tfl ImF FEATURES ^4145 □ G OSE □ 4 Ô Low Ros<on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Low input capacitance


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    IRFP350/351/352/353 IRFP250 IRFP251 IRFP252 IRFP253 IRFP350 IRFP351 IRFP352 IRFP353 00GS435 PDF

    IRF9521

    Abstract: f9520 IRF9520 Samsung
    Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 71134142 DP12S4Ô 5 0 5 « S I I G K P-CHANNEL POWER MOSFETS IRF9520/9521/9522/9523 FEATURES • • • • • • • Lower Rqs o n Improved inductive ruggedness Fast sw itching tim es Rugged poiysilicon gate cell structure


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    DP12S4Ã IRF9520/9521/9522/9523 F9520 F9512 F9523 IRF9520 IRF9521 IRF9522 IRF9523 IRF9521 f9520 IRF9520 Samsung PDF

    Contextual Info: SAMSUNG ELECTRONICS INC 7 ^ 4 1 4 2 GÜ1220B 4GG « S U G K N-CHANNEL POWER MOSFETS bME D IRF710/711/712/713 FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysillcon gate cell structure Lower input capacitance


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    1220B IRF710/711/712/713 IRF710 IRF711 IRF712 IRF713 PDF