SAMSUNG GREASE Search Results
SAMSUNG GREASE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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6N60
Abstract: SSM6N55
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OCR Scan |
SSM6N55/6N60 SSM6N55 SSM6N60 6N60 | |
15N60
Abstract: K 15N60
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OCR Scan |
SSM15N55/15N60 SSH15N55/15N60 SSM15N55 SSM15N60 SSH15N55 SSH15N60 15N60 K 15N60 | |
Contextual Info: IRF740/741/742/743 IRFP340/341/342/343 SAMSUNG ELECTRONICS INC N-CHANNEL POWER MOSFETS SÎ16K b?E D FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance |
OCR Scan |
IRF740/741/742/743 IRFP340/341/342/343 F740/IRFP340 IRF741 /IRFP341 F742/IRFP342 F743/IRFP343 IRF740 IRFP340 IRF741 | |
samsung 822
Abstract: IRFS820 N 821 Diode IRFS821 IRFS822 IRFS823 GG173
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OCR Scan |
IRFS820/821/822/823 to-220f IRFS820/821Z822/823 IRFS820 IRFS821 IRFS822 IRFS823 samsung 822 N 821 Diode GG173 | |
Contextual Info: SAMSUNG ELECTRONICS INC b4E D • TlbMlMS Ü01BM2Q 5^6 ■ SMGK P-CHANNEL POWER MOSFETS IRFS9640/9641 /9642/9643 FEATURES • • • • • • • TO-220F Lower RDs ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure |
OCR Scan |
01BM2Q IRFS9640/9641 O-220F IRFS9640 IRFS9641 IRFS9642 IRFS9643 | |
IRFS645
Abstract: IRFS644
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OCR Scan |
IRFS644/645 to-220F IRFS644/645 IRFS644 IRFS645 GG173h3 VIRFS644 | |
IRF644Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 5 G0172flfl ?4fl IRF644/645 IRFP244/245 SH6K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure |
OCR Scan |
G0172flfl IRF644/645 IRFP244/245 IRF644/IRFP244 IRF645/IRFP245 IRF644 IRFP244 IRF645 IRFP245 IRF644 | |
IRFP250
Abstract: 1RFP250 IRFP253 RIKC IRFP251 IRFP252 irfp250 mosfet samsung MOSFET
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OCR Scan |
IRFP250/251/252/253 IRFP250 RFP251 IRFP252 IRFP253 IRFP251 71t414ri 1RFP250 RIKC irfp250 mosfet samsung MOSFET | |
IRFS730
Abstract: 733 mosfet 731 MOSFET IRFS731 IR 733 IRFS732 IRFS733 0D173
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OCR Scan |
7Rb414B IRFS730/731/732/733 to-220f IRFS730/731 /732Z733 IRFS730 IRFS731 IRFS732 IRFS733 733 mosfet 731 MOSFET IR 733 0D173 | |
Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7Tbm42 GD12174 71b «SflG K N-CHANNEL POWER MOSFETS IRF620/621/622/623 FEATURES • • • • • • • Lower R d s ON Improved Inductive ruggedness Fast switching times R ugged polysilicon gate cell structure Lower input capacitance |
OCR Scan |
7Tbm42 GD12174 IRF620/621/622/623 IRF620 IRF621 IRF622 IRF623 | |
z24 mosfet
Abstract: IRF9Z25 IRF9Z20 IRF9Z22 IRF9Z24
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OCR Scan |
IRF9Z20/Z22 7Tb4142 122T4 IRF9Z20 IRF9Z24 IRF9Z22 IRF9Z25 z24 mosfet | |
irfp321
Abstract: IRFP320 IRFP323 IRFP322 mosfet p.321 samsung tv
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OCR Scan |
IRFP320/321/322/323 IRFP320 IRFP321 IRFP322 IRFP323 00GS435 irfp321 mosfet p.321 samsung tv | |
IRF150
Abstract: IRF150 MOSFET IRF150 To3 package IRF-150 IRF150 on semi
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OCR Scan |
7Tti414E IRF150/151/152/153 IRF150 IRF151 IRF152 IRF153 00GS435 IRF150 MOSFET IRF150 To3 package IRF-150 IRF150 on semi | |
fu320
Abstract: u322 IRFR322 i FU320 322 mosfet tag t 2512 u320 diode 160Tl IRFR320
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OCR Scan |
Q1235G IRFR320/322 IRFU320/322 IRFR320/U320 IRFR322/U322 loS-20W fu320 u322 IRFR322 i FU320 322 mosfet tag t 2512 u320 diode 160Tl IRFR320 | |
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irfz12Contextual Info: SAMSUNG ELECTRONICS INC b4 E D 7 ^ 4 1 4 2 0012435 71T • SMGK N-CHANNEL POWER MOSFETS IRFZ14/15 IRFZ10/12 FEATURES • • • • • • • TO -220 Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure |
OCR Scan |
IRFZ14/15 IRFZ10/12 IRFZ10 IRFZ14 IRFZ12 IRFZ15 irfz12 | |
Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 ^ b 4 m 2 GG17273 217 «SPIGK N-CHANNEL POWER MOSFETS IRF614/615 FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance |
OCR Scan |
GG17273 IRF614/615 IRF614 IRF615 IBF615 | |
DIODE S3c
Abstract: ssm10n70
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OCR Scan |
SSM10N70 SSH10N70 SSH10N70 DIODE S3c | |
SSR2955Contextual Info: SAMSUNG ELECTRONICS INC fc»ME D • 7=^142 □ Q lE M 'll P-CHANNEL POWER MOSFET SSR2955/U2955 FEATURES • • • • • • • • 54Ô BiStlGK D-PACK Lower FtDS on Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure |
OCR Scan |
SSR2955/U2955 SSR2955 SSR2955/U2955 SSU2955 | |
ssm8n55
Abstract: SSM8N60
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OCR Scan |
SSM8N55/8N60 SSM8N55 SSM8N60 00GS435 SSM8N60 | |
IRFS830
Abstract: IRFS831 IRFS832 IRFS833 rectifier 832
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OCR Scan |
71b4m2 0G173A4 IRFS830/831/832/833 IRFS830 IRFS831 IRFS832 IRFS833 Vos-400V\ T-253C rectifier 832 | |
Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7 S b 4 1 4 B DQlSlMt. ÒSI ■ SM6K N-CHANNEL IRF510/511 /512/513 POWER MOSFETS FEATURES • Lower R d s <on > • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure |
OCR Scan |
IRF510/511 IRF510 IRF51 IRF513 IRF511 IRF512 G012150 | |
Contextual Info: 7964142 SAMSUNG S E M I C O N D U CTOR INC 98D 05204 N-CHANNEL ’ POWER MOSFETS , IRFP350/351/352/353 Tfl ImF FEATURES ^4145 □ G OSE □ 4 Ô Low Ros<on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Low input capacitance |
OCR Scan |
IRFP350/351/352/353 IRFP250 IRFP251 IRFP252 IRFP253 IRFP350 IRFP351 IRFP352 IRFP353 00GS435 | |
IRF9521
Abstract: f9520 IRF9520 Samsung
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OCR Scan |
DP12S4Ã IRF9520/9521/9522/9523 F9520 F9512 F9523 IRF9520 IRF9521 IRF9522 IRF9523 IRF9521 f9520 IRF9520 Samsung | |
Contextual Info: SAMSUNG ELECTRONICS INC 7 ^ 4 1 4 2 GÜ1220B 4GG « S U G K N-CHANNEL POWER MOSFETS bME D IRF710/711/712/713 FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysillcon gate cell structure Lower input capacitance |
OCR Scan |
1220B IRF710/711/712/713 IRF710 IRF711 IRF712 IRF713 |