SAMSUNG MEMORY Search Results
SAMSUNG MEMORY Datasheets Context Search
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Contextual Info: Samsung Samsung Secret Secret SAMSUNG QDRII+/DDRII+ 16Mb C-die Specification Change Notice July, 2008 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng. |
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K7K1636T2C K7K1618T2C 512Kx36 K7S1636T4C K7S1618T4C 1Mx18 11x15 | |
Contextual Info: SAMSUNG SEMICONDUCTOR: AN OVERVIEW Samsung Semiconductor is a unit of the Samsung Group, a worldwide, Korean-based chaebol conglomer ate of 34 companies that enjoyed sales of $48 billion in 1992. Sales of Samsung Electronics Co., Ltd., of which Samsung Semiconductor is a division, were more than |
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K9F2G08U0C
Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
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BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0 | |
SAMSUNG GDDR4
Abstract: GDDR4 K4D263238 84 FBGA GDDR K4J52324Q SAMSUNG GDDR3 gddr3 graphics card SAMSUNG SEMICONDUCTOR
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512Mb 4Mx32 K4D263238 8Mx16 K4D261638 128Mb DS-07-GDRAM-001 SAMSUNG GDDR4 GDDR4 K4D263238 84 FBGA GDDR K4J52324Q SAMSUNG GDDR3 gddr3 graphics card SAMSUNG SEMICONDUCTOR | |
gddr3
Abstract: SAMSUNG LAPTOP SAMSUNG GDDR4 K4D263238 84 FBGA K4D55323 K4J52324Q samsung K4D261638 84FBGA
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512Mb 200Mhz 128Mb 8Mx16 K4D261638F-TC5A DS-06-GDRAM-001 gddr3 SAMSUNG LAPTOP SAMSUNG GDDR4 K4D263238 84 FBGA K4D55323 K4J52324Q samsung K4D261638 84FBGA | |
K9F2G08U0B
Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
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BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B | |
samsung eMMC 4.5
Abstract: eMMC samsung* lpddr2 lpddr2 SAMSUNG emmc emmc 4.5 emmc samsung SAMSUNG moviNAND lpddr2 mcp samsung lpddr2
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BRO-09-DRAM-001 samsung eMMC 4.5 eMMC samsung* lpddr2 lpddr2 SAMSUNG emmc emmc 4.5 emmc samsung SAMSUNG moviNAND lpddr2 mcp samsung lpddr2 | |
samsung ddr3
Abstract: samsung ddr3 2010 48GB ddr3 datasheet DDR3 memory HS21 HS22V HS21XM
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max192GB HS22V 288GB DS-10-IBM samsung ddr3 samsung ddr3 2010 48GB ddr3 datasheet DDR3 memory HS21 HS22V HS21XM | |
74lvc3245
Abstract: SAMSUNG NAND FLASH SAMSUNG NAND FLASH TRANSLATION LAYER samsung NAND date code marking samsung Nand "bad block" smartmedia ecc SAMSUNG NAND FLASH TRANSLATION LAYER FTL samsung hdd f3 SmartMedia Logical Format SAMSUNG NAND FTL
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128MB 0000h 0001h 0002h 12bit 16bit 74lvc3245 SAMSUNG NAND FLASH SAMSUNG NAND FLASH TRANSLATION LAYER samsung NAND date code marking samsung Nand "bad block" smartmedia ecc SAMSUNG NAND FLASH TRANSLATION LAYER FTL samsung hdd f3 SmartMedia Logical Format SAMSUNG NAND FTL | |
Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7^4142 KMM5401000B/BG GD1514b 523 I SP1GK DRAM MODULES 1Mx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5401000B is a 1M bitsx40 Dynamic RAM high density memory module. The Samsung |
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KMM5401000B/BG GD1514b 1Mx40 KMM5401000B bitsx40 20-pin 72-pin 110ns KMM5401000B-7 | |
Contextual Info: SAMSUNG ELECTRONICS INC L7E D • 7^4142 KMM540512CM DD1 S D 7 0 ‘I b i DRAM MODULES 512Kx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM540512CM isa512Kbitsx40 Dynamic RAM high density memory module. The Samsung |
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KMM540512CM 512Kx40 KMM540512CM isa512Kbitsx40 256Kx4 20-pin 72-pin KMM540512CM-6 KMM540512CM-7 | |
samsung 8Gb nand flash
Abstract: oneNand onenand xsr eXtended Sector Remapper oneNand flash SRAM-512Mb samsung NAND FLASH BGA NAND FLASH BGA samsung 2GB Nand flash samsung xsr
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108MB/s 256Mb BR-06-NAND-001 samsung 8Gb nand flash oneNand onenand xsr eXtended Sector Remapper oneNand flash SRAM-512Mb samsung NAND FLASH BGA NAND FLASH BGA samsung 2GB Nand flash samsung xsr | |
Flex-OneNAND Samsung
Abstract: OneNAND samsung note 3 samsung onenand Flex-OneNAND SAMSUNG SEMICONDUCTOR flexonenand PMIC OneNAND reader
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Apr-2009 Flex-OneNAND Samsung OneNAND samsung note 3 samsung onenand Flex-OneNAND SAMSUNG SEMICONDUCTOR flexonenand PMIC OneNAND reader | |
samsung nor flash
Abstract: NOR FLASH internal flash corruption
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Apr-2009 80us/11 32Words 64Words samsung nor flash NOR FLASH internal flash corruption | |
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SAMSUNG MCP
Abstract: MCP MEMORY samsung board design guide mcp samsung
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Apr-2009 SAMSUNG MCP MCP MEMORY samsung board design guide mcp samsung | |
Contextual Info: SAMSUNG ELECTRONICS INC b7E ]> QD1SSSQ ^35 I SMGK • KM M5324000V/VG/VP DRAM MODULES 4M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5324000V is a 4M bitsx32 Dynamic RAM high density memory module. The Samsung |
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M5324000V/VG/VP KMM5324000V bitsx32 24-pin 72-pin 110ns KMM5324000V-7 130ns KMM5324000V-8 | |
samsung LRAContextual Info: SAMSUNG ELECTRONICS INC h 4E D • TTbMlMi 0014742 4flb ■ SMÛK KMM536512W3/W3G DRAM MODULES 512K x36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM536512W3 is a512K bit x 36 Dynamic RAM high density memory module. The Samsung |
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KMM536512W3/W3G KMM536512W3 a512K 40-pin 72-pin 22fiF KMM536512W3-7 130ns KMM536512W3-8 samsung LRA | |
K8S2815ET
Abstract: samsung nor flash 128M-BIT 0x55H K8S6415ET K8F1215E 0x555 128-MBIT
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May-2009 UINT16; UINT16 0x555 512Mbit, K8S2815ET samsung nor flash 128M-BIT 0x55H K8S6415ET K8F1215E 0x555 128-MBIT | |
Contextual Info: b7E T> m TTbMlME G01S111 S04 SAMSUNG ELECTRONICS INC DRAM MODULES KMM594020B 4M x9 DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594020B is a4 M b its x 9 Dynamic RAM high density memory module. The Samsung KMM594020B |
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G01S111 KMM594020B KMM594020B 20-pin 30-pin 22/iF KMM594020B-6 110ns KMM594020B-7 | |
eMMC
Abstract: samsung emmc boot Samsung EMMC "boot mode" samsung emmc emmc controller emmc operation emmc samsung emmc controller datasheet eMMC memory emmc reader
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Contextual Info: SAMSUNG ELECTRONICS INC b7E » • V'ìbMmE GD1SE3T E74 KMM5916000/T DRAM MODULES 1 6 M x 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION * Performance range: The Samsung KMM5916000/T is a 16M b itx 8 Dynamic RAM high density memory module. The Samsung |
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KMM5916000/T KMM5916000/T KM41C16000/T 24-pin 30-pin 22/uF KMM5916000-6 110ns KMM5916000-7 | |
Samsung k9f1208u
Abstract: SAMSUNG NAND FLASH samsung nand WSOP48 K9F28 NAND FLASH BGA samsung 1Gb nand flash NAND01G cache program "NAND Flash" 128M NAND Flash Memory
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AN1838 NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 128Mbits Samsung k9f1208u SAMSUNG NAND FLASH samsung nand WSOP48 K9F28 NAND FLASH BGA samsung 1Gb nand flash NAND01G cache program "NAND Flash" 128M NAND Flash Memory | |
"at command" Samsung
Abstract: samsung nor flash 555h NOR FLASH
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555h/AAh 2AAh/55h 555h/90h XXX/00h "at command" Samsung samsung nor flash 555h NOR FLASH | |
Contextual Info: SEC-MFAEG-MUtRAM-AN Software MRS for UtRAM Application Note Version 1.0, Nov-2006 Samsung Electronics Copyright ⓒ 2006 Samsung Electronics Co.,LTD. Copyright 2004 Samsung Electronics Co, Ltd. All Rights Reserved. Though every care has been taken to ensure the accuracy of this document, Samsung |
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Nov-2006 |