SAMSUNG PRAM Search Results
SAMSUNG PRAM Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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samsung eMMC 4.5
Abstract: eMMC samsung* lpddr2 lpddr2 SAMSUNG emmc emmc 4.5 emmc samsung SAMSUNG moviNAND lpddr2 mcp samsung lpddr2
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BRO-09-DRAM-001 samsung eMMC 4.5 eMMC samsung* lpddr2 lpddr2 SAMSUNG emmc emmc 4.5 emmc samsung SAMSUNG moviNAND lpddr2 mcp samsung lpddr2 | |
samsung pramContextual Info: PRAM MODULE / _16 Mega Byte 77 KMM5364000C/CG Fast Page Mode 4Mx36 DRAM SIMM Using 4Mx1 DRAM, 5V ^ GENERAL DESCRIPTION FEATURES The Samsung KMM5364000C is a 4M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5364000C consists of thirty six CMOS |
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KMM5364000C/CG 4Mx36 KMM5364000C 110ns 130ns 150ns samsung pram | |
DG113
Abstract: Samsung Capacitor sse samsung pram
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KM41V4000LL KM41V4000LL 130ns 150ns 180ns 304x1 KM41V4000/L DG113 Samsung Capacitor sse samsung pram | |
KM41C1000B-8
Abstract: KM41C1000B
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0G10022 KM41C1000B KM41C1000B-6 110ns KM41C1000B-7 130ns KM41C1000B-8 KM41C1000B-10 KM41C1000B 576x1 KM41C1000B-8 | |
Contextual Info: KMM5362000A/AG DRAM MODULES 2M X36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KMM5362000A is a 2M bitsX36 Dynamic RAM high density memory module. The Samsung K M M 5362000A consist of sixteen CMOS 1M X 4 bit DRAMs in 20-pin SOJ package and eight CMOS 1M X 1 |
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KMM5362000A/AG KMM5362000A bitsX36 362000A 20-pin 72-pin 362000A- | |
samsung pramContextual Info: SAMSUNG ELE CTRONICS INC 4EE D • 7 ^ 4 1 4 2 OQlGlññ b » S H Û K KM41C4002 CMOS DRAM 4 M X I Bit CMOS Dynamic RAM with Static Column M od e'" FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 41C 4002 is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. |
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KM41C4002 150ns 100ns 180ns GD10203 T-46-23-15 20-LEAD samsung pram | |
Contextual Info: KMM466F203BS-L KMM466F213BS-L DRAM MODULE KMM466F203BS-L & KMM466F213BS-L EDO Mode without buffer 2Mx64 based on 2Mx8, 2K & 4K Refresh, 3.3V, Low Power/Self-Refresh GENERAL DESCRIPTION FEATURES • Part Identification The Samsung KMM466F20 1 3BS-L is a 2M bit x |
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KMM466F203BS-L KMM466F213BS-L KMM466F203BS-L KMM466F213BS-L 2Mx64 KMM466F20 28-pin 300mil 144-pin 466F203BS-L | |
Contextual Info: KM49C512A/AL/ALL CMOS DRAM 512Kx9 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM49C512A/AL/ALL is a CMOS high speed 524,288 bit x 9 Dynamic Random Access Memory. Its design is optimized for high performance applica |
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KM49C512A/AL/ALL 512Kx9 KM49C512A/A KM49C512A/AL/ALL-7 KM49C512A/AL/ALL-8 110ns 130ns 150ns KM49C512A/AL/ALL | |
KMM332F124BT-L6
Abstract: CS5-02
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KMM332F104BT-L KMM332F124BT-L KMM332F104BT-L KMM332F124BT-L 1Mx32 1Mx16, KMM332F104BT-L6/L7 cycles/128ms 60/70ns) KMM332F124BT-L6/L7 KMM332F124BT-L6 CS5-02 | |
Contextual Info: K1S5616BCM UtRAM 256Mb 16M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN |
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K1S5616BCM 256Mb | |
KM44C1002
Abstract: KM44C1002-8
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KM44C1002 200jjs 20-LEAD KM44C1002 KM44C1002-8 | |
samsung pram
Abstract: t03h 256KX4 KM44C256BL KM44C256BL-10 Scans-0014168 T462
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KM44C256BL HSF16K 256KX4 KM44C256BL- 130ns 150ns KM44C256BL-10 100ns 180ns samsung pram t03h KM44C256BL Scans-0014168 T462 | |
KM41C1001BPContextual Info: i+2E D S A M S U N G E L E C T R O N I C S INC • 7^4142 KM41C10Ö1B GGIOOSO T ■ SflGK CMOS DRAM 1 M X 1 B it C M O S D y n a m ic R A M w ith N ib b le M o d e ‘I _ ' T ' tt b - Z 5 .- r 5 FEA TU RES GEN ERAL DESCRIPTION • Performance range: The Samsung KM41C1001B is a CMOS high speed |
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KM41C10Ã KM41C1001B KM41C1001B- 110ns 130ns 150ns KM41C1001B-10 KM41C1001B KM41C1001BP | |
KSS-210A
Abstract: KSS210A sanyo SF90 SH1106 SOAD70A KSS150A PEA1030 KSS210B SOALP1200 cdm12.1
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CAB500 CADW500 CNX400 CSDEX210 CSDEX310 CVDZ93W CX810Z CXL60 KSS-210A KSS210A sanyo SF90 SH1106 SOAD70A KSS150A PEA1030 KSS210B SOALP1200 cdm12.1 | |
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equivalent data book of 10N60 mosfet
Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
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1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40 | |
km44c16000Contextual Info: KM44C16000B, KM44C161OOB CMOS PRAM 16Mx 4bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref , access time(-45, -5 or -6), package type(SOJ or TSOP-II) are optional fea |
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KM44C16000B, KM44C161OOB 16Mx4 KM44C16000B KM44C16100S km44c16000 | |
ks24l641
Abstract: EEPROM 24LC64 24AA64 24LC64 AK6012AF AT24C64 M24C64 NJU26100 NJU26150 AD127
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NJU26150 NJU26150DSP NJU261503 ROMNJU26100 38MHz 24bit 32fs/64fs 768fsMCK 384fs ks24l641 EEPROM 24LC64 24AA64 24LC64 AK6012AF AT24C64 M24C64 NJU26100 NJU26150 AD127 | |
Contextual Info: KM48C514P, KM48V514D CMOS DRAM 5 1 2 K x 8 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time |
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KM48C514P, KM48V514D 512Kx8 | |
Contextual Info: 20-S3-C2460-072006 USER'S MANUAL S3C2460 32-Bit RISC Microprocessor Revision 1.00 S3C2460 32-BIT CMOS MICROCONTROLLERS USER'S MANUAL Revision 1.00 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at |
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20-S3-C2460-072006 S3C2460 32-Bit | |
DESIGN OF TRAFFIC JAM DETECTION IN JAVA
Abstract: SPI NAND FLASH samsung k9
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21-S3-C2460-072006 S3C2460 32-Bit DESIGN OF TRAFFIC JAM DETECTION IN JAVA SPI NAND FLASH samsung k9 | |
phisonContextual Info: Room 813, Building 53, 195-88, Chung Hsing Road, Section 4, Chutung, Hsinchu, Taiwan 310, R.O.C. Tel : 886-3-5910208-10 or 17 or 28 Fax : 886-3-5910209 Email : Sales@phison.com kspua@phison.com Phison Electronics Corporation USB/Flash Memory Solution Controller Specification |
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PS-1001F/PS-1011F S-02006 phison | |
phisonContextual Info: Room 813, Building 53, 195-88, Chung Hsing Road, Section 4, Chutung, Hsinchu, Taiwan 310, R.O.C. Tel : 886-3-5910208-10 or 17 or 28 Fax : 886-3-5910209 Email : Sales@phison.com kspua@phison.com Phison Electronics Corporation USB/Flash Memory Solution Controller Specification |
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PS-1001G/PS-1011G S-01005 phison | |
8086 microprocessor based project on weight
Abstract: three phase bridge inverter 8051 project on traffic light controller arm9 drive PWM servo motor project paper PLC ELEVATOR CONTROL ELEVATOR LOGIC CONTROL PLC microcontroller 1 phase pure sine wave inverter bi-directional switches IGBT 80C196 instruction set 80C196 users manual
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XC166 XC167CI P-TQFP-144 XC167CI 8086 microprocessor based project on weight three phase bridge inverter 8051 project on traffic light controller arm9 drive PWM servo motor project paper PLC ELEVATOR CONTROL ELEVATOR LOGIC CONTROL PLC microcontroller 1 phase pure sine wave inverter bi-directional switches IGBT 80C196 instruction set 80C196 users manual | |
pic microcontroller family ptf
Abstract: epoch stepper motor motorola bts hm1 MPC8260 MSC8101 SC100 SC140 Samsung t-dmb module samsung t-dmb soc 8Mb samsung SDRAM
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MSC8101 16-Bit MSC8101UG/D HDI16 Index-12 pic microcontroller family ptf epoch stepper motor motorola bts hm1 MPC8260 SC100 SC140 Samsung t-dmb module samsung t-dmb soc 8Mb samsung SDRAM |