SAMSUNG SSE Search Results

S3FM02G

Contextual Info: S3FM02G 32-Bit CMOS Microcontrollers Revision 1.34 August 2012 User's Manual  2012 Samsung Electronics Co., Ltd. All rights reserved. Important Notice Samsung Electronics Co. Ltd. "Samsung" reserves the right to make changes to the information in this publication

Contextual Info: S3FM02G 32-Bit CMOS Microcontrollers Revision 1.20 October 2011 User's Manual  2011 Samsung Electronics Co., Ltd. All rights reserved. Important Notice Samsung Electronics Co. Ltd. "Samsung" reserves the right to make changes to the information in this publication

Contextual Info: S3FN429 32-bit CMOS Microcontrollers Revision 0.00 September 2011 User's Manual  2011 Samsung Electronics Co., Ltd. All rights reserved. Important Notice Samsung Electronics Co. Ltd. "Samsung" reserves the right to make changes to the information in this publication

samsung service manual

Abstract: rm2510 STD110
Contextual Info: V SAMSUNG SEC ASIC World Wide Network ELECTRONICS DESIGN CENTERS SSI Samsung Semiconductor Incorporated 3725 North First Street, San Jose, CA95134-1708, U.S.A. TEL 1 -408-544-4545 FAX (1)-408-544-4950 SSINE Samsung Semiconductor, INC. 238 Littleton Road, Suite 201

gu 81

Abstract: Data sheet 1713 M 9697 coasia dawin
Contextual Info: V SAMSUNG Samsung ASIC World Wide Network ELECTRONICS DESIGN CENTERS SSSI Samsung Semiconductor Incorporated 85 W. TASMAN DR., San Jose, CA95134-1713, U.S.A. TEL 1 -408-544-4545 FAX (1)-408-544-4950 SWTC South West Technology Center 7700 Irvine Center Drive Suite 600

SAMWHA RG

Abstract: Samwha rg series SAMWHA wd SAMWHA WD SERIES Samwha LT SERIES
Contextual Info: SERIES COMPARISON TABLE OF SAMSUNG vs SAMWHA Samwha took over the Aluminum Electrolytic capacitors division of Samsung Electro-Mechanics in 2002. Series comparison of Samsung Vs Samwha is listed in Table below. Ite m SURFACE M OUNT A L U M IN U M E L E C T R O L Y T IC

DG113

Abstract: Samsung Capacitor sse samsung pram
Contextual Info: a KM41V4000LL «S SAMSUNG 4M x 1 Bit C M O S Dynamic RAM with Fast Page Mode Semiconductor Advance Information SAMSUNG E LECTRONI CS I NC SSE FEATURES 7 ^4 1 4 2 D D 11355 2 = 1 2 _ ISMGK GENERAL DESCRIPTION . Performance range: KM41V4000LL - 7

T-CON BOARD samsung

Abstract: siren 16C550 FM24653 ISO-14001
Contextual Info: USER′S MANUAL S3F401F 16/32-BIT RISC MICROPROCESSOR November, 2007 REV 1.00 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2007 Samsung Electronics, Inc. All Rights Reserved Important Notice The information in this publication has been carefully

T-CON BOARD samsung

Abstract: 16x12bit 16C550 FM24653 ISO-14001
Contextual Info: USER′S MANUAL S3F401F 16/32-BIT RISC MICROPROCESSOR November, 2007 REV 1.00 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2007 Samsung Electronics, Inc. All Rights Reserved Important Notice The information in this publication has been carefully

S3FN60D

Abstract: S3FN60D_UM_REV1.30
Contextual Info: S3FN60D USB Remote 32-bit MCU Revision 1.30 January 2012 User's Manual  2012 Samsung Electronics Co., Ltd. All rights reserved. Important Notice Samsung Electronics Co. Ltd. “Samsung” reserves the right to make changes to the information in this publication

Contextual Info: DRAM MODULE KMM372C125AJ KMM372C125AJ Fast Page Mode 2Mx72 DRAM DIMM with QCAS, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C125A is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372C125A consists of four CMOS • Performance Range:

k552

Abstract: K552 motorola aaeo LA 7873 68EC030 architecture of 80486 microprocessor M9M material KS84C31 KS84C32 MC68040
Contextual Info: KS84EC30 SAMSUNG DYNAMIC RAM CONTROLLER Semiconductor M archi 991 PRODUCT OVERVIEW FEATURES The Samsung KS84EC30 is a high performance DRAM controller designed for high speed DRAM arrays up to 4Mbytes in size. It simplifies the interface between the microprocessor and DRAM array, while also significantly

Contextual Info: KMM374S823BTL PC66 SDRAM MODULE KMM374S823BTL SDRAM DIMM 8Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S823BTL is a 8M bit x 72 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung

h1331

Contextual Info: DRAM MODULE KMM364V400AK/AS KMM364V400AK/AS Fast Page Mode 4Mx64 DRAM DIMM, 4K Refresh, 3.3V G EN ERA L DESCRIPTION FEATURES The Samsung KMM364V400A is a 4M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364V400A consists of sixteen CMOS 4Mx4bit DRAMs in SOJ/TSOP-II 300mil packages

MAXIM 1535 CE

Contextual Info: S M F -06100 ELECTRONICS Samsung M icrow ave Sem iconductor G ain O ptim ized G aAs FET 2 -2 0 GHz Description Features The SMF-06100 is a 600 xm n-channel MESFET with 0.5 urn gate length, utilizing Samsung Microwave’s gain optimized G10 process. Ti/Pt/Au gate metallization and

Contextual Info: SAMSUNG ELECTRONICS INC fc^E D • 7 R b m 4 5 DDlBlll 7T2 « S M Ö K KM41C4001A CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 1 A is a CMOS high speed 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random A ccess Memory.

Contextual Info: KM4132G512A CMOS SGRAM 16Mbit SGRAM 256K X 32bit x 2 Banks Synchronous Graphic RAM LVTTL Revision 1.1 June 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 Jun. 1999 ELECTRONICS KM4132G512A CMOS SGRAM

sata to pata chips

Abstract: samsung LCD problem samsung hdd spinpoint slim odd sata interface pata Samsung sd M60S 2.5 inch HDD SATA of samsung V120
Contextual Info: PRESS RELEASE March 08, 2005 CeBIT Product launches Here, Samsung is introducing the core component of IT industry, the hard disk drive. These award winning drives provide customers the satisfaction of reliability for their PC systems and handheld devices.

RCA catalog

Abstract: hd receiver DTR1000 HDTV antenna IR 720P Remote analog Display Samsung sd DSUB-15 digital closed caption mini-din s video
Contextual Info: Digital Terrestrial Receiver DTR1000 The excellent quality of the eSTB line of set-top-boxes is fully guaranteed by Samsung Fully Compliant with ATSC Digital Television Standard Receives 8VSB Terrestrial Broadcasting RF signal 5.1-channel Dolby AC-3 Audio Decoding

transistor

Contextual Info: SAMSUNG SEMICONDUCTOR IM E O INC MPS29Ö7 7^4145 000730*1 T PNP EPITAXIAL SILICON TRANSISTOR — - :— “— . '• " ' > * T -29 -21 GENERAL PURPOSE TRANSISTOR • Collector-Emltter Voltage: Vcw=40V • Collector Dissipation: Pc (max >825mW

Contextual Info: SMP-10008-2 ELECTRONICS Volt3C|G VSHSblG Attenuator Samsung Microwave Semiconductor DC •8 GHz Description Features The SMP-10008-2 is a high performance Gallium Arsenide GaAs Monolithic Microwave Integrated Circuit MMIC) housed in a low-cost Small Outline Integrated Circuit

KS84C21

Abstract: MEC 2MHZ SS52M 430-0144
Contextual Info: KS84C21/C22 ¡ H SAM SUNG DYNAMIC RAM CONTROLLERS Preliminary Semiconductor September 1988 FEATURES PRODUCT OVERVIEW • Direct drive for 256K, 1Mbit and 4Mbit DRAMs The Samsung KS84C21 and KS84C22 are high perform­ ance dynamic RAM DRAM controllers. They simplify

RADEON IGP 216

Abstract: IBM motherboard socket 478 rev 1.6 wireless TV headphone mini project 9000IGP ATI 216 bga RC300MD r5c485 215 bga ati ATI-IXP150 ATI MOBILITY RADEON 9000
Contextual Info: This Document can not be used without Samsung’s authorization. 2 Product Specification 2-1 System Specification 2-1-1 System Specification SPECIFICATION ITEM CPU REMARKS Intel Dothan, Mobile Celeron M Processor Mobile Pentium-M Dothan 730~770, 1.6~2.13GHz,

Contextual Info: SMP-10008-1 ELECTRONICS Voltage Variable Attenuator Samsung Microwave Semiconductor DC - 8 GHz Description Features The SMP-10008-1 is a high performance Gallium Arsenide GaAs Monolithic Microwave Integrated Circuit (MMIC) housed in a low-cost Small Outline Integrated Circuit