MPS29 Search Results

Contextual Info: NEW PRO DUCT NEW PRO DUCT MPS2907A SMALL SIGNAL TRANSISTORS PNP FEATURES TO-92 0.181 (4.6) 0 .1 4 2 (3.6) 1 ♦ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ On special request, this transistor is also manufactured in the pin configuration

MPS2925

Abstract: MPS2923 MPS2924 MPS-2925 0482 transistor
Contextual Info: MPS2923 th ru MPS2925 SILIC O N NPN SILICO N AN N U LA R TRAN SISTO R NPN SILIC O N SW ITCHING T RAN SISTO R . . . designed for use in medium-speed general-purpose amplifier and oscillator applications. • Collector-Em itter Breakdown Voltage — • Sm all Signal Current Gain —

MPS2907A

Abstract: EQUIVALENT MPS2907A 1N916 MPS2222A mps2907a transistor
Contextual Info: MPS2907A PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 COLLECTOR 3 2 BASE ƔFEATURES . Epitaxial Planar Die Construction . Complementary NPN Type Available 1 1 EMITTER

c 879 transistor

Abstract: MPS-2926 stu 407 MPS2926 100-C
Contextual Info: MPS2926 silicon NPN SILICON ANNULAR TRANSISTOR NPN SILICON AMPLIFIER TRANSISTOR . . . designed for use in amplifier applications. • Collector-Emitter Breakdown Voltage — B V q e o = 18 Vd c • Small-Signal Current Gain — hfe •35-470 M A X IM U M R A T IN G S

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MPS2907-L/H MPS2907A-L/H Features • • • • • • x • • PNP Silicon Plastic-Encapsulate Transistor

MPS2907

Contextual Info: MCC Micro Commercial Components Features • • • • x x MPS2907 MPS2907-L/H MPS2907A MPS2907A-L/H
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM PNP Silicon Plastic-Encapsulate Transistor

TD2A

Abstract: B7S2 BSN10A TLC2272 4066 74AC04 MAX232N DATASHEET TD1A S1 UM1 MAX232N
Contextual Info: 20k CCW G N D 1 CONS1:4 CONS1:3 2 3 QP3 MPS2907A XM1 10MHz 2 A 1 3 14 n/c 15 MCLR 1N5242B 2 35 12 VCC QO1 DS1 1N5817 VN2222LL DO1 AOUT1 AOUT2 TRIGGER VREF TP2 XO1 GND GND <OSC2 MCLR VDD VDD 3 4 5 6 7 8 22p 44 43 42 41 39 38 37 36 TD1A TD1B TD2A TD2B DISCH

Contextual Info: MPS2907A Preferred Device General Purpose Transistors PNP Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –60 Vdc Collector–Base Voltage VCBO –60 Vdc Emitter–Base Voltage VEBO –5.0 Vdc

2N3903 MOTOROLA SOT-23

Abstract: MPS3640 MMBT2907A MMBT2907 MMBT3903 mmbt3904 motorola 2N3903 MMBT2907 MMBT2907A MMBT3640 MMBT3904
Contextual Info: MOTOROLA 6367254 SC -CXSTRS/R MOTOROLA TL FI SC XSTRS/R i DE I b 3 t i 7 2 S 4 F 96D 00flE03b 82036. T D - M A X I M U M R ATINGS Rating Symbol MPS2907 40 MPS2907A 60 Unit VcEO VcBO Emitter-Base Voltage Ve b o 5.0 Vdc lc 600 mAdc Collector Current — Continuous

MPS2907A

Abstract: EQUIVALENT MPS2907A MMBT2907A MPS2907A EQUIVALENT
Contextual Info: MPS2907A Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistor PNP TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications.

MPS2907

Abstract: mps2907a s2907a
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors MPS2907 M P S2907A* PNP Silicon ‘Motorola Preferred Device MAXIMUM RATINGS Rating Symbol MPS2907 C ollector-E m itter Voltage v CEO -AO C ollector-B ase Voltage v CBO -6 0 Vdc E m itter-B ase Voltage

MMBT2907L

Abstract: BT2907AL
Contextual Info: XSTRS/R F MOTOROLA SC | fc,3t>72S4 □QflS'JTM 2 1EE T-J17-^ M A X I M U M R A T IN G S S ym bol MPS2907L MPS2907AL U n it C o lle ctor-E m itter Voltage VCEO 40 60 Vdc C ollector-Base V o lta g e VCBO Em itter-Base Voltage Vebo 5.0 Vdc *C 600 m A dc Rating

MPS2907A

Abstract: MPS2907AG MPS2907ARLG MPS2907ARLRA MPS2907ARLRAG MPS2907ARLRPG mps 2907A
Contextual Info: MPS2907A Preferred Device General Purpose Transistors PNP Silicon Features • Pb−Free Packages are Available* COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage VCBO −60 Vdc

EQUIVALENT MPS2907A

Abstract: MPS2907A EQUIVALENT MMBT2907A MPS2907A
Contextual Info: PRELIMINARY PRELIMINARY PRELIMINARY MPS2907A SMALL SIGNAL TRANSISTORS PNP FEATURES TO-92 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) ♦ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ On special request, this transistor is also

MPS2907A EQUIVALENT

Abstract: EQUIVALENT MPS2907A MMBT2907A MPS2907A
Contextual Info: MPS2907A Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistor PNP TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications.

Contextual Info: MPS2926 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)25 I(C) Max. (A)500m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.470 h(FE) Max. Current gain.

Contextual Info: MPS2907 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W)625m’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)20n @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.100 h(FE) Max. Current gain.300

Contextual Info: MPS2990 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25è V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: MPS2925S Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)25 I(C) Max. (A)100m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • x • MPS2907-L/H MPS2907A-L/H PNP Silicon Plastic-Encapsulate Transistor

Contextual Info: 45E D • ^ 0 ^ 7 2 5 0 DDlVflbl 2 TOSHIBA TRANSISTOR T0S4 - MPS2907A SILICON PNP EPITAXIAL TYPE PCT PROCESS TO SHIBA (DISCRETE/OPTO) FOR HIGH SPEED SWITCHING USE Unit in mm DC TO VHF AMPLIFIER APPLICATIONS AND COMPLEMENTARY CIRCUTRY. FEATURES : . High DC Current Gain Specified : -0.1- 500mA

2n3904 2n3906

Abstract: 2SC1815 2SA1015 2SC1815 2SA1015
Contextual Info: SIGNAL TRANSISTORS SM ALL SIGNAL TRANSISTOR Type No. TO-92 2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2N4403 2N5400 2N5401 2N5550 2N5551 MPS2222 MPS2222A MPS2907 MPS2907A MPSA05 MPSA06 MPSA13 MPSA14 MPSA42 MPSA43 MPSA55 MPSA56 MPSA62 MPSA63 MPSA64

MPS2907A

Abstract: mps2907
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • x x MPS2907 MPS2907A PNP Silicon Plastic-Encapsulate Transistor Capable of 0.625Watts of Power Dissipation.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 MPS2222A Plastic-Encapsulate Transistors TO-92 TRANSISTOR NPN 1. EMITTER FEATURE Complementary NPN Type available (MPS2907A) 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)