SAMSUNG TANTALUM CAPACITOR TCP Search Results

Contextual Info: SAMSUNG ELECTRONICS INC 42 E D O f 7Sb41_42 £ 0 1 0 1 4 1 KM44C288B 2 MStlGK CMOS DRAM Lfio'ZS-tS 256K X 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C268B is a high speed CMOS

Contextual Info: b?E » S A M S UN G E L E C T R O N I C S INC • 7^4142 0 0 1 5 5 1 1 T3fi CMOS DRAM KM44C266C 2 5 6 K X 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: tnAC I cac tnc KM44C266C-6 60ns 15ns

Contextual Info: SAMSUNG ELE CT RONICS INC MSE D Hi 7*T_h43i42 0010110 2 B SMGK KM44C266B CMOS DRAM 2 5 6 K X 4 Bit CMOS Dynamic RAM with Fast Page Mode : Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Perform ance range; tR A C • • • • • • • • • •

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7^4142 KM44C268C 0G15S45 SO I « S P I C K CMOS DRAM 2 5 6 K X 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C268C is a high speed CMOS

Contextual Info: SAMSUNG ELECTRONICS INC L7E D TTbMma KM41C1000CL 00153=17 ÔS7 CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its

Contextual Info: SAMSUNG ELECTRONICS INC 42E ]> B 7Tb*4142 001003b S Ë3SÎ1GK KM41C1000BL CMOS DRAM 1MX1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000BL is a C M O S high speed 1,048,576 x 1 Dynamic Random Access Memory. Its de­

Contextual Info: SAMSUNG ELECTRONICS INC b7E ]> 7 = ^ 4 1 4 2 0 0 1 5 4 1 4 7bb H S f l G K CMOS DRAM KM41C1000CSL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CSL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its

km41c1001

Contextual Info: SAMSUNG SEMICONDUCTOR INC S3E D • 7Tbm42 KM41C1001A CMOS DRAM T '4 -6 '5 1 3 - 1 M x 1 Bit Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: tcAc tnc 70ns 20ns 130ns KM41C1001A- 8 80ns 20ns 150ns KM41C1001A-10 100ns 25ns 180ns

TCA 290

Contextual Info: '* KM44C268C CMOS DRAM 2 5 6 K X 4 Bit C M O S Dynamic R A M with Static Column M ode Write P er Bit M ode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C268C is a high speed CMOS 2 6 2 ,1 4 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

KM41C1000B-8

Abstract: KM41C1000B
Contextual Info: SAMSUNG ELECTRONICS INC 4SE D • 7 ^ 4 1 4 2 0G10022 5 KM41C1000B CMOS DRAM 1M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: two • • • • • • • • • tcAQ The Samsung KM41C1000B is a CMOS high speed

Contextual Info: MEE D SAMSUNG ELEC TRONICS INC n 7%4142 DGlOObS 1 BHSMiSK KM41C1002B CMOS DRAM 1M X 1 Bit C M O S Dynamic R A M with Static Column M ode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1002B is a CMOS high speed 1,048,576 x 1 Dynamic Random Access Memory. Its de­

Contextual Info: SAMSUNG ELECTRONICS INC MSE ]> 7 ^ 4 1 4 2 0Q10125 • "' KM44C258B 4 MSMGK CMOS DRAM - ‘1 ' T % ¿/ 0 ' 2 S .1 5 2 5 6 K X 4 Bit C M O S Dynamic R AM with Static Column M ode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C258B is a CMOS high speed

Contextual Info: SAMSUNG ELECTRONICS INC b7E » • 7 ^ b m 4 2 DOlblSl flôfi KM44C4000 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its

Contextual Info: SAMSUNG ELECTRONICS b7E D INC • 7 T b 4 1 4 5 D D l b 2D 5 07T KM44C4100L CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C4100L is a CMOS high speed 4,194,304 x 4 Dynamic Random Access Memory. Its de­

KM41C1001BP

Contextual Info: i+2E D S A M S U N G E L E C T R O N I C S INC • 7^4142 KM41C10Ö1B GGIOOSO T ■ SflGK CMOS DRAM 1 M X 1 B it C M O S D y n a m ic R A M w ith N ib b le M o d e ‘I _ ' T ' tt b - Z 5 .- r 5 FEA TU RES GEN ERAL DESCRIPTION • Performance range: The Samsung KM41C1001B is a CMOS high speed

Contextual Info: SAM S UN G E L E C T R O N I C S INC b?E ]> • 7^4142 KM44C1000BL GDlSbbfl ?T*i I SMGK CMOS DRAM 1M x 4 Bit C M O S Dynamic RAM with Fast Page M ode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1000BL is a high speed CMOS 1,048,516 x 4 Dynamic Random Access Memory. Its

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • T'ibmMS ÜÜ1S7E5 ST4 ■ KM44C1002B CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1002B is a CMOS high speed 1,048,576x4 Dynamic Random Access Memory, Its de­

DRAM 18DIP

Abstract: KM41C1000CSL-6 KM41C1000CSL-7 KM41C1000CSL-8 DRAM 256kx4
Contextual Info: SAMSUNG ELE CTRONICS INC b?E ]> Wt 7 ^ 4 1 4 2 KM41C1000CSL 0015414 ?hh SM6K CM O S DRAM 1Mx1 Bit CM O S Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sun g KM 41C1000CSL is a C M O S high speed 1,048,576x1 Dynamic Random A cce ss Memory. Its

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 ^ ^ 4 1 4 2 00154*1 *4 T 2 R KM44C256CSL CMOS DRAM 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION » Performance range: The Samsung KM44C256CSL is a CMOS high speed 262,144 x 4 Dynamic Random Access Memory. Its

41C1000A

Abstract: KM41C1000 KM41C1000A-10 KM41C1000AZ 41C1000 km41c1000a KM41C1000AJ
Contextual Info: SAMSUNG SEMICONDUCTOR INC S3E D • 7^4142 0005117 b KM41C1Q00A CMOS DRAM 1 M x 1 Bit Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC KM41C1000A- 7 • • • • • • • • • tcAC The Samsung KM41C1000A is a CMOS high speed

KM44C256AP

Abstract: samsung hv capacitor KM44C256A-8 KM44C256A KM44C256A-10 KM44C256A-12 KM44C2 262144x4
Contextual Info: SAMSUNG SEMICONDUCTOR INC E3E D 7=1^145 OOOñlbO 7 • KM44C256A CMOS DRAM 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC • • • • • • • • • tcAC •rc 150ns KM44C256A- 8 80ns 20ns

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 Q01S74S QÛ2 I KM44C1012B CMOS DRAM 1 M x 4Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1012B is a high speed CMOS 1 ,0 4 8 ,5 7 6 x 4 Dynamic Random Access Memory. Its

km41c1001

Contextual Info: CMOS DRAM ^ KM41C1001C 1 M x 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1001C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications

DG113

Abstract: Samsung Capacitor sse samsung pram
Contextual Info: a KM41V4000LL «S SAMSUNG 4M x 1 Bit C M O S Dynamic RAM with Fast Page Mode Semiconductor Advance Information SAMSUNG E LECTRONI CS I NC SSE FEATURES 7 ^4 1 4 2 D D 11355 2 = 1 2 _ ISMGK GENERAL DESCRIPTION . Performance range: KM41V4000LL - 7