SAMSUNG TL1L Search Results

M366S3323DTS

Contextual Info: PC133/PC100 Unbuffered DIMM M366S3323DTS M366S3323DTS SDRAM DIMM 32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S3323DTS is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

M366S1723DTS

Contextual Info: PC133/PC100 Unbuffered DIMM M366S1723DTS M366S1723DTS SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S1723DTS is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

m463s0924bt0-l1l

Abstract: K4S281632B-TC1H M463S0924BT0-L1H SAMSUNG TL1L K4S281632B-TC
Contextual Info: PC100 µDIMM M463S0924BT0 M463S0924BT0 SDRAM µ DIMM 8Mx64 SDRAM µDIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M463S0924BT0 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: PC133/PC100 Unbuffered DIMM M366S0924DTS M366S0924DTS SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S0924DTS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

M464S0924DTS

Contextual Info: M464S0924DTS PC133/PC100 SODIMM M464S0924DTS SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S0924DTS is a 8M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung

m464s1724dts-l7a samsung

Abstract: M464S1724DTS
Contextual Info: M464S1724DTS PC133/PC100 SODIMM M464S1724DTS SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S1724DTS is a 16M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung

M366S1723DTU

Contextual Info: PC133/PC100 Low Profile Unbuffered DIMM M366S1723DTU M366S1723DTU SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S1723DTU is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

M374S1723DTS

Abstract: k4s28083
Contextual Info: PC133/PC100 Unbuffered DIMM M374S1723DTS M374S1723DTS SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S1723DTS is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

M366S3323DTU

Contextual Info: PC133/PC100 Low Profile Unbuffered DIMM M366S3323DTU M366S3323DTU SDRAM DIMM 32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S3323DTU is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

M374S1723DTU

Contextual Info: PC133/PC100 Low Profile Unbuffered DIMM M374S1723DTU M374S1723DTU SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S1723DTU is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

SAMSUNG TL1L

Contextual Info: Preliminary CMOS SDRAM K4S510432M 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Dec. 2001 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 Dec. 2001 K4S510432M Preliminary CMOS SDRAM

Contextual Info: PC133/PC100 SODIMM M464S3323DN1 M464S3323DN1 SDRAM SODIMM 32Mx64 SDRAM SODIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE • Performance range The Samsung M464S3323DN1 is a 32M bit x 64 Synchronous Part No.

K4S511632M

Contextual Info: Preliminary CMOS SDRAM K4S511632M 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Dec. 2001 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 Dec. 2001 K4S511632M Preliminary CMOS SDRAM

K4S510832M

Abstract: RA12
Contextual Info: Preliminary CMOS SDRAM K4S510832M 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Dec. 2001 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 Dec. 2001 K4S510832M Preliminary CMOS SDRAM

K4S641632F-TC75

Abstract: SAMSUNG TL1L 1M Synchronous DRAM samsung
Contextual Info: K4S641632F CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S641632F CMOS SDRAM Revision History Revision 0.0 June, 2001

K4S510832M

Abstract: RA12
Contextual Info: K4S510832M CMOS SDRAM 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.3 May. 2002 K4S510832M CMOS SDRAM Revision History Revision 0.0 Mar. 2001

K4S511632

Abstract: K4S511632M
Contextual Info: K4S511632M CMOS SDRAM 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.3 May. 2002 K4S511632M CMOS SDRAM Revision History Revision 0.0 Mar. 2001

M374S3323DTU

Contextual Info: PC133/PC100 Low Profile Unbuffered DIMM M374S3323DTU M374S3323DTU SDRAM DIMM 32Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE • Performance range The Samsung M374S3323DTU is a 32M bit x 72 Synchronous

K4S641632F-TC75

Contextual Info: K4S641632F CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S641632F CMOS SDRAM Revision History Revision 0.0 June, 2001

CA12

Abstract: K4S510432M RA12
Contextual Info: K4S510432M CMOS SDRAM 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.3 May. 2002 K4S510432M CMOS SDRAM Revision History Revision 0.0 Mar. 2001

K4S561632C-TC75

Abstract: K4S561632C-TC1L
Contextual Info: K4S561632C CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Mar. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 Mar. 2001 K4S561632C CMOS SDRAM Revision History Revision 0.1 Feb. 15, 2001

K4S641632E-TC75

Contextual Info: K4S641632E CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.2 Sept. 2001 K4S641632E CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM

K4S281632C-TL1L

Abstract: M466S1723CT2-L1L M466S1723CT3-L1L
Contextual Info: SERIAL PRESENCE DETECT PC66 SODIMM PC66 SODIMM 144pin SPD Specification (128Mb C-die base) Rev. 0.1 May 2000 Rev 0.1 May 2000 SERIAL PRESENCE DETECT PC66 SODIMM M466S0924CT0-L1L, C1L • Organization : 8Mx64 • Composition : 8Mx16*4 • Used component part # : K4S281632C-TL1L, C1L

samsung date code

Abstract: 16MX64 sdram samsung
Contextual Info: SERIAL PRESENCE DETECT PC100 SODIMM PC100 SODIMM 144pin SPD Specification (256Mb B-die base) Rev. 0.1 Apr. 2000 Rev 0.1 Apr. 2000 SERIAL PRESENCE DETECT PC100 SODIMM M464S1654BT1-L1H/L1L, C1H/C1L • Organization : 8MX64 • Composition : 16MX16 *4 • Used component part # : K4S561632B-TL1H/TL1L,TC1H/TC1L