SC-70 A6 Search Results

PLC GE FANUC

Abstract: FANUC ELECTRICAL MANUAL FANUC cable optical cable plc ge fanuc FANUC O SERIES interbus D-Sub Connector OPERATING TEMPERATURE A1078 fanuc FANUC POWER SUPPLY
Contextual Info: IBS GE 90-70 SC/I-T Data Sheet INTERBUS Controller Board for GE Fanuc Series 90-70 PLCs Data Sheet Revision A 12/1997 Product Description INTERBUS Generation 4 controller board for GE Fanuc Series 90-70 PLCs Features - INTERBUS protocol DIN E 19258 - Remote bus connection via

Contextual Info: WEITRON BAS16W / BAV70W BAW56W / BAV99W Surface Mount Switching Diode SWITCHING DIODE 200-215m AMPERRES 70-75 VOLTS Features: *Low Current Leakage *Low Forward Voltage *Reverse Recover Time Trr 6ns *Small Outline Surface Mount SOT-323 Package 3 1 2 SOT-323 SC-70

BAS16W

Abstract: BAV99W BAW56W BAV99W A7 BAV70W bav99W diode CD DIODE
Contextual Info: WEITRON BAS16W / BAV70W BAW56W / BAV99W Surface Mount Switching Diode SWITCHING DIODE 200-215m AMPERRES 70-75 VOLTS Features: *Low Current Leakage *Low Forward Voltage *Reverse Recover Time Trr 6ns *Small Outline Surface Mount SOT-323 Package 3 1 2 SOT-323 SC-70

max3721

Abstract: MCM6264WP70 MCM6264NJ70 MCM6264 62L64 072O MCM62L64-70 MCM6264J70
Contextual Info: M O TO RO LA SC M E M O R Y /A S IC MlaE D b3b?2S l D O ö G ö 'iS MOTOROLA M O TE S Ì > 5 - \R , Order this data sheet by MCM6264-70/D I SEMICONDUCTOR TECHNICAL DATA c8 IC x 8 Bit Fast S ta tic [RAM M CM 6234-70 MCM 62S-64-70 The MCM6264-70 is a 65,536 bit static random access memory organized as 8192 words

514100A

Abstract: Siemens CCa A4 siemens cca Q67100-Q586 T-V6-Z3-15 siemens FLH G2040M
Contextual Info: • aaasbos SIEME qqhqmqo SIEMENS r- e i s i e g AK TI EN GE SE LL SC HA F • 4Mx 1-Bit Dynamic RAM M7E T -¥ 6 -Z 3 -l5 HYB 514100A-60/-70/-80 Advance Information • 4194 304 words by 1-bit organization • 0 to 70 ‘C operating temperature • Fast access and cycle time

Contextual Info: BAV99W THRU BAS16W SMALL SIGNAL SCHOTTKY BARRIER DIODES SOT-323 SC-70 0.016(0.40) 0.012(0.30) Low current leakage Low forward voltage 3 0.053(1.35) 0.045(1.15) Small outline surface mount SOT-23 PACKAGE 0.094(2.40) TOP VIEW 1 0.079(2.00) 2 0.026(0.65) 0.016(0.40)

NEC U574

Abstract: u574 M7-CSP32 C540 DIODE m7csp32 IC JRC 4029 M9-CSP64 d42b diode 2n3904 sot 23 SDRAM SODIMM CA0062
Contextual Info: 4 5 4 PCI RESET NC7S14 SC-70 5P 2 T12 RESUME RESET C632 U50 1 PRSTMSK0 2 4 1 19 1 3VDDS 5 4 3 3 PCIRST00 19,31,32,33,34,35,36,46 7 3 2 4 3 C 0.1uF 16V 80-20% 0402 Y5V U48A 1 NOT RESET AT SUSPEND 74LVX32MTCX FAIRCHILD

Contextual Info: DASH NO. M CODE MADE FROM SD REVISIONS o ER -F ^ 39004 JPK 01/28/04 I to 7704-9S sc a le 2:1 APPROX SURFACE AREA NOTES: 1. MATERIALS: CAPS: VINYL INSULATORS: TEFLON, ASTM-D-4894 GASKETS: SILICONE RUBBER. Z Z-R -765 CONDUCTIVE GASKET: CONSIL C 87-10004, 60-70 DUROMETER

marking CJD

Abstract: A6 marking MRF947t1 marking 6B
Contextual Info: SC-70/SQT-323 Devices_ Maximum die size 20 mil x 20 mil CASE 419-02 RF Transistors Maximum Ratings Gain-Bandwldth NF @ <§ Device t f Gain @ Marking h Typ GHz lc mA Typ dB MHz Typ dB MHz A H B 8 8 8 15 15 30 2.1 2.1 2.0 1500 1500 1500 10.5 10.5

K68A

Abstract: a1f4m A1A4M R1Ik N1A4M 2SK104 2SA1138 a1l4m n1f4m 2SD1557
Contextual Info: QUICK REFERENCE GUIDE MINI MOLD SC-59 Q U IC K R E FE R EN C E TA B L E Switching Diodes □ m Leadless Type Q U IC K REFER EN C E TA B LE (Switching Diodes) □ \ ^ V R (V ) GENERAL P UHPO SE 30 50 70 LS53 LS 54 LS 55 LS 953 LS 954 L S 955 100 S IN G L E

Contextual Info: UPD482445G5-60 1/2 IL08D C-MOS 4M-BIT DUALPORT GRAPHICS BUFFER —TOP VIEW— 30 1 VDD DT/OE IN 2 3 GND 70 SC 69 SE IN 31 IN 32 33 GND 68 34 SIO0 I/O 4 67 SIO15 W0/IO0 I/O 5 66 W15/IO15 SIO1 W1/IO1 I/O I/O 6 7 8 VDD I/O 65 SIO14 39 64 W14/IO14 40 I/O W15/IO15

Contextual Info: TC528257FT-70 1/2 IL11D C-MOS 2 M (262,144 x 8)-BIT MULTIPORT DRAM —TOP VIEW— 17 1 VDD GND 44 SC IN 2 43 SIO8 I/O SIO1 I/O 3 42 SIO7 I/O SIO2 I/O 4 41 SIO6 I/O 18 19 20 21 24 25 SIO3 I/O 5 40 SIO5 I/O SIO4 I/O 6 39 SE IN DT/OE IN 7 38 W8/IO8 I/O 26

ECHO canceller IC

Contextual Info: Ap plica tion Note, DS 1 .0, June 2000 ACE A c o us t ic E ch o C an c e l le r P S B 2 1 70 V 2 .1 M i gr a t io n f r om AC E V 1 . 1 t o V 2 .1 Tr a n sc ei ve r s N e v e r s t o p t h i n k i n g . PSB 2170 Revision History: 2000-06-29 DS 1.0 Previous Version:

Contextual Info: 2 56K x4 Monolithic VideoRAM MVM4256K/T/V-10/12/15 m o l a l e Issue 3.1 : November 1991 S e m ic o n d u c to r 262,144 x 4 CMOS High Speed Video Dynamic RAM Features NC 28 27 26 25 24 23 22 21 RÄ5 20 A8 A6 A5 A4 Vcc 19 18 17 16 15 SC SI/OO RAM Access Time of 100,120,150 ns

a810c

Abstract: sc 1091 "Video Dynamic RAM" military VM42
Contextual Info: 256K x 4 Monolithic VideoRAM n o i a i e MVM4256K/T/V-10/12/15 Issue 3.1 : November 1991 itniconduclor 262,144 x 4 CMOS High Speed Video Dynamic RAM Pin Definition Package Types: 'K '.T.'V Features 22 NC RAS A8 A6 A5 A4 21 20 19 18 17 16 Vcc 15 A7 DT/OE 1/00

S2L00

Contextual Info: 256K x 4 molale V id e o R A M M V M 4 2 5 9 -1 0 /1 2 Issue 2.0 : February 1992 P R E L IM IN A R Y S e m ic o n d u c to r Inc. Pin Definition 262,144 X 4 CMOS Fully Featured Video RAM SC SI01 SI02 DT/OE W1/I01 W 2/I02 WB/WE NC RAS A8 A6 A5 A4 Vcc Features

Contextual Info: LESHAN RADIO COMPANY, LTD. Switching Diode ƽ Pb-Free Package is available. LBAS16LT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LBAS16LT1G A6 SOT-23 3000/Tape&Reel LBAS16LT3G A6 SOT-23 10000/Tape&Reel 3 1 2 MAXIMUM RATINGS Rating

Contextual Info: AS42C4256 883C 256K X 4 VRAM AUSTIN SEMICONDUCTOR, INC. 256K X 4 DRAM WITH 5 1 2 x 4 SAM VRAM AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • MIL-STD-883 • • SC SDQ1 SDQ2 TR\-OE\ DQ1 DQ2 ME\-WE\ NC RAS\ A8 A6 A5 A4 , i [ i i i i i i [

MT42C4064

Abstract: 0041478 mt4067 MT42
Contextual Info: MT42C4064 883C AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SMD 5962-89952, Class M • JAN 5962-89952, Class B • MIL-STD-883, Class B 24L/400 DIP tD- 11 ) sc i 1 * SDQ1 2 SDQ2Í 3 T r /ü ë î 4 DQ1 5 DQ2C ME/WE 7 RAS E8 A6 C9 A5C 10

MCM67A618B

Abstract: SRAM
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Order this document by MCM67A618B/D SEMICONDUCTOR TECHNICAL DATA MCM67A618B Advance Information A6 A7 E UW LW VCC V SS DL AL G A8 A9 A10 The MCM67A618B is a 1,179,648 bit latched address static random access memory organized as 65,536 words of 18 bits. The device integrates a 64K x 18

MCM67B618B

Abstract: FN 52 pin MOTOROLA 778-02
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MCM67B618B/D SEMICONDUCTOR TECHNICAL DATA Advance Information MCM67B618B 64K x 18 Bit BurstRAM Synchronous Fast Static RAM A6 A7 E UW LW ADSC ADSP ADV K G A8 A9 A10 The MCM67B618B is a 1,179,648–bit synchronous fast static random access

EM 18

Abstract: EM-189 MC68040 MCM67M618B
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Advance Information Order this document by MCM67M618B/D MCM67M618B 64K x 18 Bit BurstRAM Synchronous Fast Static RAM A6 A7 E UW LW TSC TSP BAA K G A8 A9 A10 The MCM67M618B is a 1,179,648–bit synchronous static random access

5962-8949704MXA

Abstract: SMJ44C251B-10SVM VRAM MT42C4256C-10 MT42C4256 vram dual port SMJ44C251B 5962-8949704 asi SMJ44C251B 5962-8949704MZA
Contextual Info: VRAM SMJ44C251B MT42C4256 Austin Semiconductor, Inc. 256K X 4 VRAM PIN ASSIGNMENT Top View 256K x 4 DRAM with 512K x 4 SAM 28-Pin DIP (C) (400 MIL) AVAILABLE AS MILITARY SPECIFICATIONS SC SDQ1 SDQ2 TR\/OE\ DQ1 DQ2 ME\/WE\ NC RAS\ A8 A6 A5 A4 Vcc • SMD 5962-89497

VRAM

Abstract: MT42C4256 SMJ44C251B SMJ44C251B-10JDM MT42C4256C-10 SMJ44C251B-10 SMJ44C251B-10SVM
Contextual Info: VRAM SMJ44C251B MT42C4256 Austin Semiconductor, Inc. 256K X 4 VRAM PIN ASSIGNMENT Top View 256K x 4 DRAM with 512K x 4 SAM 28-Pin DIP (C) (400 MIL) AVAILABLE AS MILITARY SPECIFICATIONS SC SDQ1 SDQ2 TR\/OE\ DQ1 DQ2 ME\/WE\ NC RAS\ A8 A6 A5 A4 Vcc • SMD 5962-89497