SD 484 IP Search Results

LV327

Abstract: sd 484 ip LV-302 LV315
Contextual Info: K6 Miniature Key Switches Features/Benefits • Excellent tactile feel • Wide variety of LED’s, travel and actuation forces • Designed for low-level Typical Applications • Automotive • Industrial electronics • Computers and network equipment switching

13n03la

Abstract: Q67042-S4160
Contextual Info: IPU13N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max 12.8 mΩ ID 30 A • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)

IPB14N03LA

Abstract: P-TO263-3-2 14N03 14n03la
Contextual Info: IPB14N03LA IPI14N03LA, IPP14N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 13.6 mW ID 30 A • Logic level • Excellent gate charge x R DS(on) product (FOM)

13N03LA

Abstract: GD 364 IPF13N03LA *13N03LA 13n03l
Contextual Info: IPF13N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max 13.3 mΩ ID 30 A • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)

13n03la

Abstract: IPD13N03LA P-TO252-3-11
Contextual Info: IPD13N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max 13 mΩ ID 30 A • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)

13N03LA

Abstract: IPF13N03LA 13n03l
Contextual Info: IPF13N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max 13.3 mW ID 30 A • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)

14N03LA

Abstract: 14N03L 14N03 IPB14N03LA G IPI14N03LA IPP14N03LA IPB14N03LA
Contextual Info: IPB14N03LA IPI14N03LA, IPP14N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 13.6 mΩ ID 30 A • Logic level • Excellent gate charge x R DS(on) product (FOM)

13N03LA

Contextual Info: IPD13N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max 13 mΩ ID 30 A • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)

16cn10n

Abstract: IEC61249-2-21 IPP16CN10N PG-TO220-3 infineon marking TO-252
Contextual Info: IPB16CN10N G IPD16CN10N G IPI16CN10N G IPP16CN10N G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • N-channel, normal level R DS on ,max (TO252) 16 mΩ • Excellent gate charge x R DS(on) product (FOM) ID 53 A • Very low on-resistance R DS(on)

IPP16CN10N

Contextual Info: OptiMOS 2 Power-Transistor IPB16CN10N G IPD16CN10N G IPI16CN10N G IPP16CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 16 mΩ ID 53 A • Very low on-resistance R DS(on)

16cn10n

Abstract: IPP16CN10N PG-TO220-3
Contextual Info: OptiMOS 2 Power-Transistor IPB16CN10N G IPD16CN10N G IPI16CN10N G IPP16CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 16 mΩ ID 53 A • Very low on-resistance R DS(on)

16cn10n

Abstract: 16cn10 IPP16CN10N D53A PG-TO220-3 16CN1
Contextual Info: OptiMOS 2 Power-Transistor IPB16CN10N G IPD16CN10N G IPI16CN10N G IPP16CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 16 mΩ ID 53 A • Very low on-resistance R DS(on)

16cn10n

Abstract: 16cn10 IPB16CN10N 16CN1
Contextual Info: OptiMOS 2 Power-Transistor IPB16CN10N G IPD16CN10N G IPI16CN10N G IPP16CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 16 mΩ ID 53 A • Very low on-resistance R DS(on)

TOKO 1002

Contextual Info: FD-Family Switching Regulators, PCB + Chassis Benign Environment TOKO Switching Regulators FD-Family No Input to output isolation Single output of 3.3,5,12,15 or 30 V DC/0.5.1.5 W Double output of ±12 or ±15 V DC/0.5.3 W Input voltage from 4.5 V up to 17 V DC

Contextual Info: OSM SMA Specifications Qcnaral MatartU 33 8 t*d oorre ilon re d itin t per A 8 T M -A -6 8 2 and A ST M -A -484, Type 303. Beryilum oopper per A 8 T M 0 1 0 6 . PTFE Rourooerbon par A 8T M -0-1457. Rntoh 331 Center o o n tio ti shall be gold pitted to t min. thtoknen of .00005 Inch In eooordeno* with

SX405

Abstract: 4070 omron itt 9503
Contextual Info: omRon EE-SX3 /SX4 PCB-mount Sensors with Photo 1C Output Have Built-in Preamplifier Chip and Schmitt Circuit • Compact, lightweight model with a receiver and amplifier circuit built into a single chip ■ Excellent temperature characteristics assured by

Contextual Info: NCP3335 Product Preview High Accuracy Ultra−low Iq, 500 mA Low Dropout Regulator http://onsemi.com The NCP3335 is a high performance low dropout regulator that entails all the required features for consumer electronics and encompasses a unique design technology that allows for a high

Contextual Info: PD - 96086 IRF7309IPbF • Lead-Free Description www.irf.com 1 07/07/06 IRF7309IPbF 2 www.irf.com IRF7309IPbF www.irf.com 3 IRF7309IPbF 4 www.irf.com IRF7309IPbF www.irf.com 5 IRF7309IPbF 6 www.irf.com IRF7309IPbF www.irf.com 7 IRF7309IPbF 8 www.irf.com IRF7309IPbF

motorola mpf990

Contextual Info: MPF930* MPF960* MPF990* M A X IM U M R ATIN G S Rating Symbol MPF930 MPF960 MPF990 Unit Drain-Source Voltage VDS 35 60 90 Vdc Drain-Gate Voltage VDG 35 60 90 Vdc Gate-Source Voltage — Continuous - Non-repetitive tp s 50 ¿¿s Drain Current Continuous (1)

Contextual Info: IRF7316QPbF Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage

WT2S-P161

Abstract: WT2S-P431 WL2S-P211 wt2s-p461 WT2S-P261 WT2S-N131 WT2S-P131 WT2S-P231 WL2S-P111 Sensick
Contextual Info: KD01_W2_en.fm Seite 476 Montag, 24. Juli 2006 3:03 15 Photoelectric proximity switch, WT 2 Slim, BGS, red light Scanning distance 1 . 15/30 mm Dimensional drawing 12.5 Photoelectric proximity switch 3 4 15 2 25.1 20.6 1 5 detection jobs possible Insensitive to interference

Contextual Info: Cyclone V Device Overview 2013.05.06 CV-51001 Subscribe Feedback The Cyclone V devices are designed to simultaneously accommodate the shrinking power consumption, cost, and time-to-market requirements; and the increasing bandwidth requirements for high-volume and

Contextual Info: IRF7303QPbF Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient Qg Q gs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage

Contextual Info: SSF7N90A Advanced Power MOSFET FEATURES b vdss = • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance ■ Improved Gate Charge lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 n A (M a x ) @ VDS = 900V