SDP8000 Search Results

Infrared Phototransistor

Abstract: infrared diode Infrared Emitting Diode SDP8106 SDP8406 SEP8506
Contextual Info: 17 September 1997 SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50¡ nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series

Contextual Info: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package . 50“ nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger

SEP8506

Abstract: SDP8000 SDP8406 SDP8106
Contextual Info: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50¡ nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger

SEP8506-002

Contextual Info: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt

Contextual Info: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger

SEP8506-001

Abstract: SEP8506-002 SEP8506-003 SDP8106 SEP8506 infra red diode
Contextual Info: SEP8506 GaAs Infrared Emitting Diode INFRA-20.TIF FEATURES • Side-emitting plastic package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt

Contextual Info: SEP8526 GaAs Infrared Emitting Diode FEATURES • Side-emitting package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger

sep8526-002

Contextual Info: SEP8526 GaAs Infrared Emitting Diode FEATURES • Side-emitting package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger

diameter glass lens phototransistor

Contextual Info: SE3470/5470 AlGaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° ' nominal beam angle option • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents

Contextual Info: Datasheet - SEP8706-002 SEP8706-002 SEP Series AlGaAs Infrared Emitting Diode, Side-emitting Plastic Package Representative photograph, actual product appearance may vary. Features ● ● ● ● Due to regional agency approval requirements, some products may not be

dual Phototransistor mouse

Abstract: quadrature mouse phototransistor HLC2705 HLC2705-001 mouse Phototransistor SE5455-003 SE5470-004 hlc led MOUSE ENCODER output SE3455-003
Contextual Info: 1739-2012:QuarkCatalogTempNew 9/17/12 4:46 PM Page 1739 20 Emitters and Sensors RoHS Metal Package ᭤ Temperature Range: –55°C to +125°C ᭤ Miniature, Hermetically Sealed, Metal Can Package SE2460-003, SE2470-002 ᭤ Ideal for High Pulsed Current Applications (SE3455-001,

Contextual Info: SEP8706 AIGaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50° nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive current • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106

SEP8706-003

Abstract: SEP8706 SEP8706-001 SDP8106 SEP8706-002
Contextual Info: SEP8706 AlGaAs Infrared Emitting Diode INFRA-20.TIF FEATURES • Side-emitting plastic package • 50° nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive current • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106

SEP8506-001

Abstract: SDP8106 SDP8406 SEP8506 SDP8000
Contextual Info: Datasheet - SEP8506-001 SEP8506-001 SEP Series GaAs Infrared Emitting Diode, Side-emitting Plastic Package Representative photograph, actual product appearance may vary. Features ● ● ● ● Due to regional agency approval requirements, some products may not be

R840

Abstract: NFRA-20-TIF
Contextual Info: SEP8706 AIGaAs Infrared Emitting Diode FEATURES • Side-looking plastic package • 50° nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106

HOA0963-T51

Abstract: HOA0973-N55 SD5421-002 HOA0961-N51 SDP8004-301 HOA1879-012 HOA0973-N51 HOA0973N51 HOA2001-001 SD1420-002
Contextual Info: Sensing and Control ! " = = Sept, 2002 = E-mail:jian.bo.zhou@honeywell.com www.honeywell.com/sensing/ !"#$%& LED mm 1 !" 1 935mm @IF(mA) 2 0.35 0.70 24 24 1.00 0.35 24 24 0.65 1.10 24 24 1.65 0.20 24 24 0.35 0.70 24 24 1.00 0.35 24 24 0.65 1.10 24 18 1.65

SDP8106

Abstract: SDP8406 SEP8706
Contextual Info: SEP8706 AlGaAs Infrared Emitting Diode FEATURES • Side-looking plastic package • 50¡ nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106

HOA1395

Abstract: dual Phototransistor mouse ACTIVE INFRARED MOTION DETECTOR TO46 lens phototransistor mouse Optical tachometer IR SENSOR wheel mouse HOA2498 HOA0149 HLC2705 mouse photodetector se3470
Contextual Info: Infrared Sensors Line Guide Solid, sensitive solutions. Optoelectronics integrates optical principles and semi-conductor electronics — the inter-conversion of electricity to light. In electronic systems where feedback and control systems are common, these infrared sensors are often

SDP8000

Abstract: SEP8506-003 SDP8106 SDP8406 SEP8506
Contextual Info: Datasheet - SEP8506-003 SEP8506-003 SEP Series GaAs Infrared Emitting Diode, Side-emitting Plastic Package Representative photograph, actual product appearance may vary. Features ● ● ● ● Due to regional agency approval requirements, some products may not be

SEP8506-002

Abstract: SDP8106 SDP8406 SEP8506 infrared emitting diode
Contextual Info: Datasheet - SEP8506-002 SEP8506-002 SEP Series GaAs Infrared Emitting Diode, Side-emitting Plastic Package Representative photograph, actual product appearance may vary. Features ● ● ● ● Due to regional agency approval requirements, some products may not be

Contextual Info: SEP8706 AIGaAs Infrared Emitting Diode FEATURES • Side-looking plastic package • 50° nominal beam angle • 880 nm wavelength » Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106

SEP8706

Contextual Info: Datasheet - SEP8706-003 SEP8706-003 SEP Series AlGaAs Infrared Emitting Diode, Side-emitting Plastic Package Representative photograph, actual product appearance may vary. Features ● ● ● ● Due to regional agency approval requirements, some products may not be

HOA1395

Abstract: Infrared Phototransistor
Contextual Info: Infrared Sensors Line Guide Solid, sensitive solutions. Optoelectronics integrates optical principles and semi-conductor electronics — the inter-conversion of electricity to light. In electronic systems where feedback and control systems are common, these infrared sensors are often

SDP8000

Contextual Info: SEP8706-001 SEP Series AlGaAs Infrared Emitting Diode, Side-emitting Plastic Package Representative photograph, actual product appearance may vary. Features ● ● ● ● Due to regional agency approval requirements, some products may not be available in your area.