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    SDP8106 Price and Stock

    Honeywell Sensing and Control SDP8106-001

    SENSOR PHOTO 935NM SIDE VIEW RAD
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    Honeywell Sensing and Control SDP8106-106

    SENSOR OPT INFRARED
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    Honeywell Sensing and Control / MICRO SWITCH SDP8106-105

    Phototransistors INFRARED SENSORS
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    SDP8106 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SDP8106 Honeywell Silicon Photodarlington Original PDF
    SDP8106-001 Honeywell PHOTOTRANSISTOR MODULE SILICON NPN 4.45MM 935NM Original PDF
    SDP8106-001 Honeywell Silicon Photodarlington Transistor Original PDF
    SDP8106-1 Unknown Semiconductor Master Cross Reference Guide Scan PDF

    SDP8106 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Infrared Phototransistor

    Abstract: infrared diode Infrared Emitting Diode SDP8106 SDP8406 SEP8506
    Text: 17 September 1997 SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50¡ nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series


    Original     		PDF SEP8506 SDP8406 SDP8106 SDP8000/8600 INFRA-20 SEP8506 Infrared Phototransistor infrared diode Infrared Emitting Diode SDP8106

    SDP8106

    Abstract: SEP8506 SEP8706
    Text: SDP8106 Silicon Photodarlington FEATURES • Side-looking plastic package • 50¡ nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes INFRA-79.TIF DESCRIPTION The SDP8106 is an NPN silicon photodarlington


    Original     		PDF SDP8106 SEP8506 SEP8706 INFRA-79 SDP8106

    SDP8106

    Abstract: SEP8506 SEP8706 Photodarlington
    Text: 17 September 1997 SDP8106 Silicon Photodarlington FEATURES • Side-looking plastic package • 50¡ nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes INFRA-79.TIF DESCRIPTION The SDP8106 is an NPN silicon photodarlington molded


    Original     		PDF SDP8106 SEP8506 SEP8706 INFRA-79 SDP8106 Photodarlington

    SEP8506

    Abstract: SDP8000 SDP8406 SDP8106
    Text: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50¡ nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger


    Original     		PDF SEP8506 SDP8406 SDP8106 SDP8000/8600 INFRA-20 SEP8506 SDP8000 SDP8106

    SEP8706-003

    Abstract: SEP8706 SEP8706-001 SDP8106 SEP8706-002
    Text: SEP8706 AlGaAs Infrared Emitting Diode INFRA-20.TIF FEATURES • Side-emitting plastic package • 50° nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive current • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106


    Original     		PDF SEP8706 INFRA-20 SDP8406/8426 SDP8106 SDP8000/8600 INFRA-71 SEP8706 INFRA130 SEP8706-003 SEP8706-001 SDP8106 SEP8706-002

    SDP8106

    Abstract: SDP8406 SEP8706
    Text: SEP8706 AlGaAs Infrared Emitting Diode FEATURES • Side-looking plastic package • 50¡ nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106


    Original     		PDF SEP8706 SDP8406 SDP8106 SDP8000/8600 INFRA-20 SEP8706 SDP8106

    photodarlington

    Abstract: SDP8106 SDP8106-001 SEP8506 SEP8706
    Text: Datasheet - SDP8106-001 SDP8106-001 Representative photograph, actual product appearance may vary. SDP Series Silicon PhotoDarlington, Side-looking Plastic Package Features ● ● Due to regional agency approval requirements, some products may not be available in your area.


    Original     		PDF SDP8106-001 SEP8506 SEP8706 SDP8106 photodarlington SDP8106-001

    SEP8506-001

    Abstract: SEP8506-002 SEP8506-003 SDP8106 SEP8506 infra red diode
    Text: SEP8506 GaAs Infrared Emitting Diode INFRA-20.TIF FEATURES • Side-emitting plastic package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt


    Original     		PDF SEP8506 INFRA-20 SDP8406/8426 SDP8106 SDP8000/8600 INFRA-71 SEP8506 INFRA130 SEP8506-001 SEP8506-002 SEP8506-003 SDP8106 infra red diode

    HOA1883

    Abstract: SDP8106 SDP8406 SEP8506
    Text: HOA1883 Transmissive Sensor FEATURES • Choice of phototransistor or photodarlington output • Wide lead spacing • 0.060 in. 1.52 mm dia. detector aperture • 0.140 in.(3.56 mm) slot width INFRA-41.TIF OUTLINE DIMENSIONS in inches (mm) Tolerance 3 plc decimals


    Original     		PDF HOA1883 INFRA-41 HOA1883 SDP8106 SDP8406 SEP8506

    HOA1885

    Abstract: SDP8106 SDP8406
    Text: HOA1885 Transmissive Sensor FEATURES • Choice of phototransistor or photodarlington output • High profile package for raised optical centerline • Ambient light and dust protective filter • 0.200 in. 5.08 mm slot width INFRA-69.TIF DESCRIPTION The HOA1885 series consists of an infrared emitting


    Original     		PDF HOA1885 INFRA-69 HOA1885 HOA1885- SDP8106 SDP8406

    metal detector schematic

    Abstract: METAL DETECTOR circuit for make metal detector sensor Metal Detector all datasheet phototransistor pulse metal detector HOA1874 hydrocarbon sensor metal detector circuit HOA1874-001
    Text: 17 September 1997 HOA1874 Transmissive Sensor FEATURES • Choice of phototransistor or photodarlington output • Three sensitivity ranges • Choice of metal can package or plastic molded components • 0.120 in. 3.05 mm slot width INFRA-15.TIF DESCRIPTION


    Original     		PDF HOA1874 INFRA-15 HOA1874 HOA1874-001, HOA1874-003, HOA1874-011 metal detector schematic METAL DETECTOR circuit for make metal detector sensor Metal Detector all datasheet phototransistor pulse metal detector hydrocarbon sensor metal detector circuit HOA1874-001

    Untitled

    Abstract: No abstract text available
    Text: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package . 50“ nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger


    OCR Scan     		PDF SEP8506 SDP8406 SDP8106 SDP8000/8600 SEP8506

    Untitled

    Abstract: No abstract text available
    Text: SEP8706 AIGaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50° nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive current • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106


    OCR Scan     		PDF SEP8706 SDP8406/8426 SDP8106 SDP8000/8600 SEP8706 SDP8406

    Untitled

    Abstract: No abstract text available
    Text: SDP8106 Silicon Photodarlington FEATURES • Side-looking plastic package . 50° nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes DESCRIPTION OUTLINE DIMENSIONS in inches (mm) The SDP8106 is an NPN silicon photodarlington


    OCR Scan     		PDF SDP8106 SEP8506 SEP8706 SDP8106 JJ11IL+

    SEP8506-002

    Abstract: No abstract text available
    Text: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt


    OCR Scan     		PDF SEP8506 SDP8406/8426 SDP8106 SDP8000/8600 SEP8506 SDP8406 SEP8506-002

    R840

    Abstract: NFRA-20-TIF
    Text: SEP8706 AIGaAs Infrared Emitting Diode FEATURES • Side-looking plastic package • 50° nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106


    OCR Scan     		PDF SEP8706 SDP8406 SDP8106 SDP8000/8600 NFRA-20-TIF SEP8706 R840 NFRA-20-TIF

    Untitled

    Abstract: No abstract text available
    Text: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger


    OCR Scan     		PDF SEP8506 SDP8406 SDP8106 SDP8000/8600 INFRA-20 SEP8506 SEP8506---

    Untitled

    Abstract: No abstract text available
    Text: SEP8706 AIGaAs Infrared Emitting Diode FEATURES • Side-looking plastic package • 50° nominal beam angle • 880 nm wavelength » Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106


    OCR Scan     		PDF SEP8706 SDP8406 SDP8106 SDP8000/8600 SEP8706 G0224T4

    Untitled

    Abstract: No abstract text available
    Text: SEP8526 GaAs Infrared Emitting Diode FEATURES • Side-emitting package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger


    OCR Scan     		PDF SEP8526 SDP8406/8426 SDP8106 SDP8000/8600 SEP8526 SDP8426

    Untitled

    Abstract: No abstract text available
    Text: SDP8106 Silicon Photodarlington FEATURES • Side-looking plastic package • 50° nominal acceptance angle • Mechanically and spectrally matched to SEP8506/8526 and SEP8706 infrared emitting diodes DESCRIPTION The SDP8106 is an NPN silicon photodarlington molded


    OCR Scan     		PDF SDP8106 SEP8506/8526 SEP8706 SDP8106

    sep8526-002

    Abstract: No abstract text available
    Text: SEP8526 GaAs Infrared Emitting Diode FEATURES • Side-emitting package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger


    OCR Scan     		PDF SEP8526 SDP8406/8426 SDP8106 SDP8000/8600 SEP8526 SDP8426 sep8526-002

    HOA-1882-12

    Abstract: HOA1874-12 HOA1873-12 HOA1879-15 HOA1879-11 HOA1873-13 HOA1872-13 D 400 transistor HOA1882-12 transistor
    Text: HONEYWELL INC/ MICRO MIE D M SSlfiBD G 013ñ7 b 3 • M O N I K A - Z ? Assemblies Transmissive With Plastic Encapsulated Components The assemblies on this page are based on SEP8506IRED, the SDP8406 phototran­ sistor and the SDP8106 photodarlington. ORDER AND SPECIFICATION GUIDE


    OCR Scan     		PDF SEP8506IRED, SDP8406 SDP8106 HOA1872-11 HOA1872-12 HOA1872-13 HOA1873-11 HOA1873-12 HOA1873-13 HOA1874-11 HOA-1882-12 HOA1874-12 HOA1879-15 HOA1879-11 D 400 transistor HOA1882-12 transistor

    SEP8526

    Abstract: sep8526-002 diode honeywell
    Text: b7E » • 4SS1Û30 001bb7S MOT « H O N l HONEYWELL INC/ MICRO SEP8526 GaAs Infrared Emitting Diode FEATURES • Side-emitting package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106


    OCR Scan     		PDF 001bb7S SEP8526 SDP8406/8426 SDP8106 SDP8000/8600 SEP8526 0Dlbb77 SDP8426 sep8526-002 diode honeywell

    transistor

    Abstract: HOA1873-13 HOA1884-12 HOA1882-12 HOA1874-12 HOA-1882-12 HOA1872-12 HOA1878-13 HOA1872-13 HOA1882-11
    Text: HONEYWELL INC/ MICRO Assemblies 41E J> 4551030 0013fl7b 3 •H0N1 Transmissive With Plastic Encapsulated Components The assemblies on this page are based on SEP8506 IRED, the SDP8406 phototran­ sistor and the SDP8106 photodarlington. ORDER AND SPECIFICATION GUIDE


    OCR Scan     		PDF 45S1A30 0013fl SEP8506 SDP8406 SDP8106 HOA1872-11 HOA1872-12 HOA1872-13 HOA1873-11 HOA1873-12 transistor HOA1873-13 HOA1884-12 HOA1882-12 HOA1874-12 HOA-1882-12 HOA1878-13 HOA1882-11