SE 470 UF Search Results

RG2164-1

Abstract: rg24064 RG2377-8
Contextual Info: DC N ETW O RK S TH R EE-PH A SE ^electrocube WYE PART NO. RESISTOR O H M ±10% WATTS CAPACITOR MFD VOLTS (VAC) RG2406-1 RG2406-2 RG2406-3 RG2406-4 RG2406-5 RG2406-6 RG2406-7 RG2406-8 RG2406-9 RG2406-10 RG2406-11 22 33 47 68 82 100 150 220 330 470 680 10

M39006

Contextual Info: Index Wet Tantalum Capacitors • Mauor Y ü Commercial Types Elastomer Seal M ax C V per Unit Volume Low D C L Low DF Silver C a se D x L 3.3 m-F 6 to to 60 470 m F .1 1 5 X .3 0 0

U24033

Abstract: OSCILATOR faze tranzistor U2403 U2403B u2402 rezistor se 130 n
Contextual Info: ASICentrum s.r.o.  Novodvorská 994, 142 21 Praha 4 Tel. 02 4404 3478, Fax: (02) 472 2164, E-mail: info@asicentrum.cz = = = = = = = = = = Popis obvodu U2403B Funkce integrovaného obvodu U2403B Dalším zajímavým integrovaným obvodem vhodným pro nabíjení NiCd/NiMH (ale i olověných akumulátorů, na rozdíl

EEFSE0E331R

Abstract: EEFSD0J121R EEF-SE0E331R EEF-SD0G151R EEFSX0G101R SD 330 SE 470 UF
Contextual Info: Specialty Polymer Aluminum Electrolytic Chip Capacitors SP–Cap / S Surface Mount Type Series: S Japan Japan • Features ● Lower ESR ● Ripple Current ● Higher Lower ESR ■ Features ● Higher Ripple Current ■ Specifi cations Operating Temp. Range

471k

Abstract: CD32-4R7 CD75-101K CD42-151K CD52-470K
Contextual Info: 产品名称：CD 型贴片功率电感 M 特征性能及应用范围 平底易表面贴装，可焊性强，焊接牢固。 � AK � � 非屏蔽铁氧体磁芯构造，成本较低。 � 产品无铅，附合欧盟 ROHS 标准。 � 主要应用于手机手电筒、数码相机、数码相

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP01878G Silicon N-channel MOS FET For digital circuits • Package  Two elements incorporated into one package  Reduction of the mounting area and assembly cost by one half.

ntc 10K B 3950

Abstract: ntc 100K B 3950 of thermistor 4.7K ohms ntc NTC Thermistor 2.2k 100k 3950 NTC thermistor 100K 3950 of thermistor 47K ohms ntc 3950 thermistor 100K thermistor ntc 10k 3950 10k 4050
Contextual Info: THERMISTOR PRODUCTS NTC THERMISTOR FOR TEMPERATURE SENSING A N D COMPENSATING m ufíntn A tH c m to r i * £ 7 e c frc *ic $ NTH5G Series NTH5G, reflow soldering type 0805 sized chip NTC Thermistor, offers high stability in environment and wide resistance range

EEF-SD0G151R

Abstract: 73 marking
Contextual Info: Specialty Polymer Aluminum Electrolytic Chip Capacitors SP–Cap / S Surface Mount Type Series: S Japan • Features ● Lower ESR ● Higher Ripple Current ■ Specifications -40 to +105o C 2 to 6.3 V. DC 56 to 470 mF ±20 % (120Hz/+20oC) Operating Temp. Range

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Variable Capacitance Diodes MA26V17 Silicon epitaxial planar type For VCO Unit: mm • Features 3  Absolute Maximum Ratings Ta = 25°C 0.39+0.01 −0.03 Symbol Rating Unit Reverse voltage VR

SM7497

Abstract: audio amplifier 2W IC 12PIN mini audio amplifier 2w DC VOLUME CONTROL 12V AUDIO AMPLIFIER 12v to Amplifier btl 12PIN stereo 1W "amplifier class ab" mini speaker 3w class d power amplifier
Contextual Info: 三合微科股份有限公司 SAMHOP Microelectronics Corp. 3W STEREO AUDIO POWER AMPLIFIER WITH ADVANCED DC VOLUME CONTROL The information in this document is subject to change without notice. c SAMHOP Microelectronics Corp. All Rights Reserved. 台北縣新店市民權路100號7樓

2SK3539

Abstract: UP01878G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP01878G Silicon N-channel MOS FET For digital circuits • Package  Two elements incorporated into one package  Reduction of the mounting area and assembly cost by one half.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Variable Capacitance Diodes MA26V19 Silicon epitaxial planar type For VCO Unit: mm • Features 3  Absolute Maximum Ratings Ta = 25°C 0.39+0.01 −0.03 Symbol Rating Unit Reverse voltage VR

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Variable Capacitance Diodes MA27V23 Silicon epitaxial planar type For VCO Unit: mm 0.27+0.05 –0.02 • Features 0.10+0.05 –0.02 Rating Unit Reverse voltage VR 6 V Junction temperature Tj 125

SM7498

Abstract: 5v 3W AUDIO AMPLIFIER CIRCUIT DIAGRAM 3W AUDIO AMPLIFIER CIRCUIT DIAGRAM transistors 12v 4 channel AUDIO power AMPLIFIER 9v 3w class d power amplifier 12V AUDIO AMPLIFIER 5v 3w audio amplifier 5v 3W stereo AMPLIFIER CLASS D AUDIO AMPLIFIER 3w stereo 12v stereo amplifiers
Contextual Info: 三合微科股份有限公司 SAMHOP Microelectronics Corp. 3W STEREO AUDIO POWER AMPLIFIER WITH ADVANCED DC VOLUME CONTROL The information in this document is subject to change without notice. c SAMHOP Microelectronics Corp. All Rights Reserved. 台北縣新店市民權路100號7樓

TRANSISTOR MARKING ue

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4083G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV

Electric Double Layer Capacitors, Radial Lead Type

Contextual Info: Electrolytic Capacitor Quick Guide Electrolytic Capacitor Quick Guide SP-Cap / Conductive Polymer Aluminu m Electrolytic Capacitors（Specialty Polymer Aluminu m Electrolytic Capacitors） Surface Mount Type Series Part No. CS EEFCS-R CT EEFCT-R SS

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04878G Silicon N-channel MOSFET For switching • Package  Allowing 2.5 V drive  Incorporating a built-in gate protection-diode  Reduction of the mounting area and assembly cost by one half

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3948 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3948G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV

Contextual Info: This product complies with RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK4072 Silicon N-channel MOSFET For switching circuits Unit: mm 0.40+0.10 –0.05 • Features  High-speed switching  Wide frequency band 0.16+0.10 –0.06 Rating

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV

Contextual Info: WRE_S - 3WR2 & WRF_S - 3WR2 Series 3W，WIDE INPUT, ISOLATED & REGULATED DUAL/SINGLE OUTPUT DC-DC CONVERTER FEATURES ● Ultra-Miniature SIP Package ● 2:1 wide input voltage range ● Temperature range: -40°C ~ +85°C ● 3KVDC isolation ● Short circuit protection automatic recovery

2SK3948

Abstract: 2SK3948G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3948G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV

2SK3539G

Abstract: UP04878G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04878G Silicon N-channel MOSFET For switching • Features  Package  Allowing 2.5 V drive  Incorporating a built-in gate protection-diode  Reduction of the mounting area and assembly cost by one half