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    OSCILATOR Search Results

    OSCILATOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MK3200SILFTR Renesas Electronics Corporation 32.768KHz Clock Oscillator Visit Renesas Electronics Corporation
    HSP45116AVC-52 Renesas Electronics Corporation Numerically Controlled Oscillator/Modulator Visit Renesas Electronics Corporation
    HSP45116AVC-52Z Renesas Electronics Corporation Numerically Controlled Oscillator/Modulator Visit Renesas Electronics Corporation
    MK3200SLF Renesas Electronics Corporation 32.768KHz Clock Oscillator Visit Renesas Electronics Corporation
    MK3200SLFTR Renesas Electronics Corporation 32.768KHz Clock Oscillator Visit Renesas Electronics Corporation

    OSCILATOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    oscilator

    Abstract: 2SC2715
    Text: 2SC2715 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 AM/FM IF AMPLIFIER,LOCAL OSCILATOR 1 OF FM/VHF TUNER High Current Gain Bandwidth 2 Product f T =600MHz 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm ABSOLUTE MAXIMUM RATINGS o Ta=25 C


    Original     		PDF 2SC2715 OT-23 600MHz 300uS 2SC2715 oscilator

    2SC3734LT1

    Abstract: na 50
    Text: 2SC3734LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 AM/FM IF AMPLIFIER,LOCAL OSCILATOR 1 OF FM/VHF TUNER High Current Gain Bandwidth 2 Product f T =1100MHz 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm ABSOLUTE MAXIMUM RATINGS o Ta=25 C


    Original     		PDF 2SC3734LT1 OT-23 1100MHz 300uS 2SC3734LT1 na 50

    2SC1812

    Abstract: No abstract text available
    Text: 2SC1812 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 AM/FM IF AMPLIFIER,LOCAL OSCILATOR 1 OF FM/VHF TUNER High Current Gain Bandwidth 2 Product f T =1100MHz 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm ABSOLUTE MAXIMUM RATINGS o Ta=25 C


    Original     		PDF 2SC1812 OT-23 1100MHz 300uS 2SC1812

    BFP650

    Abstract: BGA420 T-25
    Text: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT- Silicon Germanium technology


    Original     		PDF BFP650 OT343 BFP650 BGA420 T-25

    Untitled

    Abstract: No abstract text available
    Text: IC INFORMATION J 1/1 E GEX-FM903XM/UC BP5250 Function DC / DC Converter Hybrid Type Model CONTROL CIRCUIT TRIANGLE OSCILATOR Fosc = 190kHz OVER CURRENT DETECTION CIRCUIT DRIVE CIRCUIT 7 6 5 4 3 2 1 ADJ VOUT IS GND SW VIN CTL 2001.8


    Original     		PDF GEX-FM903XM/UC BP5250 190kHz

    RBS 3000

    Abstract: BFP650 BFP650 noise figure BGA420 T-25 RBS INFINEON
    Text: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT - Silicon Germanium technology


    Original     		PDF BFP650 OT343 RBS 3000 BFP650 BFP650 noise figure BGA420 T-25 RBS INFINEON

    oscilator

    Abstract: 2SC3734LT1 na 50
    Text: 2SC3734LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 AM/FM IF AMPLIFIER,LOCAL OSCILATOR 1 OF FM/VHF TUNER High Current Gain Bandwidth 2 Product f T =1100MHz 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm o ABSOLUTE MAXIMUM RATINGS Ta=25 C


    Original     		PDF 2SC3734LT1 OT-23 1100MHz 300uS 2SC3734LT1 oscilator na 50

    ZN1034

    Abstract: ZN 1034 applications ZN 1034
    Text: Issued March 1984 H2466 Precision timer ic ZN 1034 Stocknumber 305-850 A digital i.c. in a 14 lead DIL package eqivalent to ZN1034, providing precise timing intervals from 50ms up to several days. The frequency of an "on-chipÓ oscilator is determined by an externally connected


    Original     		PDF H2466 ZN1034, ZN1034 ZN 1034 applications ZN 1034

    germanium transistors NPN

    Abstract: BFP420F BFP650F GMA marking marking r5s
    Text: BFP650F NPN Silicon Germanium RF Transistor* • For medium power amplifiers and driver stages 3 • High OIP 3 and P-1dB 2 4 1 • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21.5 dB at 1.8 GHz Noise figure F = 0.8 dB at 1.8 GHz • 70 GHz fT - Silicon Germanium technology


    Original     		PDF BFP650F BFP650may germanium transistors NPN BFP420F BFP650F GMA marking marking r5s

    transistor 1T

    Abstract: BFP650 equivalent
    Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4  For high power amplifiers  Ideal for low phase noise oscilators  Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz  Gold metallization for high reliability


    Original     		PDF BFP650 VPS05605 OT343 Jul-01-2003 transistor 1T BFP650 equivalent

    ocxo 13MHz

    Abstract: CFPO-2
    Text: CFPO-2S Ultra Low Phase Noise & High Stability OCXO Outline mm - Package 50 Description 20.3 ▪▪ Ultra low phase noise and high stability Oven Controlled 1 Oscilator (OCXO) manufactured for us by Rakon 20.3 Bottom View Package Outlines ▪▪ 50.8 x 50.8 x 25.4mm (50)


    Original     		PDF 2002/95/EC 13MHz 50ppm/ ocxo 13MHz CFPO-2

    OSCILATOR

    Abstract: cb sot23-3 2SC2715
    Text: 2SC2715 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 AM/FM IF AMPLIFIER,LOCAL OSCILATOR 1 OF FM/VHF TUNER High Current Gain Bandwidth 2 Product f T =600MHz 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm o ABSOLUTE MAXIMUM RATINGS Ta=25 C


    Original     		PDF 2SC2715 OT-23 600MHz 300uS 2SC2715 OSCILATOR cb sot23-3

    BFP650 noise figure

    Abstract: data sheet germanium diode germanium transistors NPN npn germanium BFP650
    Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4  For high power amplifiers  Ideal for low phase noise oscilators  Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz  Gold metallization for high reliability


    Original     		PDF BFP650 VPS05605 OT343 curr26 Mar-27-2003 BFP650 noise figure data sheet germanium diode germanium transistors NPN npn germanium BFP650

    BFP650

    Abstract: No abstract text available
    Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz • Gold metallization for high reliability


    Original     		PDF BFP650 VPS05605 OT343 Jan-08-2004 BFP650

    RBS 3000

    Abstract: 1g28
    Text: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT - Silicon Germanium technology


    Original     		PDF BFP650 OT343 RBS 3000 1g28

    PH marking code

    Abstract: No abstract text available
    Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability


    Original     		PDF BFP650 VPS05605 OT343 PH marking code

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC74HC4060AP/AF TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC4060AP, TC74HC4060AF 1 4 -S T A G E BINARY COUNTER/ OSCILATOR The TC74HC4060A is a high speed CMOS 14 - STAGE BINARY COUNTER fabricated with silicon gate C2MOS technology.


    OCR Scan     		PDF TC74HC4060AP/AF TC74HC4060AP, TC74HC4060AF TC74HC4060A 16PIN DIP16-P-300-2 16PIN 200mil

    dBm150

    Abstract: No abstract text available
    Text: PRELIMINARY GaAs MIXER IC • NJG1 5 5 0 F Function Mixer including local Oscilator amplifier Absolute Maximum Rating Supply Voltagel Supply Voltage2 Mixer Input Power Local Input Power Power Dissipation Operating Temperature Storage Temperature Ta=25’C


    OCR Scan     		PDF 130MHz -10dBiti) 820MHz -30dBm, 950MHz 1489MHz 1359MHz dBm150

    power supply scr 30 100 20000

    Abstract: No abstract text available
    Text: PIEZO TECHNOLOGY INC S'îE D • 7140704 0000253 T « P T E I VOLTAGE CONTROLLED CRYSTAL OSCILATORS T - 50-23 T'SO'Oy M/N X01061C HIGH FREQUENCY XO1045C X01195C X01140C 5 - 80 14 - 16 AND 28-32 20 - 50 10 - 150 12.26 ± 50 ppm 20.48 To be lockable 30 ± 0.2%


    OCR Scan     		PDF X01061C X01061C XO1045C X01195C X01140C power supply scr 30 100 20000

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A TC74HC4060AP/AF TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC4Q6QAP, TC74HC4Q6QAF 14-STAGE BINARY COUNTER/OSCILATOR The TC74HC4060A is a high speed CMOS 14 - STAGE BINARY COUNTER fabricated with silicon gate C2MOS technology.


    OCR Scan     		PDF TC74HC4060AP/AF TC74HC4Q6QAP, TC74HC4Q6QAF 14-STAGE TC74HC4060A 16PIN DIP16-P-300-2 16PIN

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC74HC4060AP/AF TO SHIBA CM OS D IG ITAL INTEGRATED CIRCUIT SILICON M ONOLITHIC TC74HC4060AP, TC74HC4060AF 1 4 -S T A G E BINARY COUNTER/ OSCILATOR The TC74HC4060A is a high speed CMOS 14 - STAGE BINARY COUNTER fabricated with silicon gate C2MOS technology.


    OCR Scan     		PDF TC74HC4060AP/AF TC74HC4060AP, TC74HC4060AF TC74HC4060A 16PIN DIP16-P-300-2 16PIN 200mil

    Untitled

    Abstract: No abstract text available
    Text: TC74HC4060AP/AF 14-STAGE B IN A R Y COUNTER/OSCILATOR T he TC74HC4060A is a h ig h speed CMOS 14-STAGE BINARY COUNTER fabricated with silicon gate C 2 MOS technology. I t achieves th e h ig h speed o p e ra tio n s im ila r to eq u ivalent L S T T L w hile m a in ta in in g th e CMOS low


    OCR Scan     		PDF TC74HC4060AP/AF 14-STAGE TC74HC4060A 14-STAGE X-10R TC74HC4060AP/AF-4 TC74HC4060AP/AF-5

    4060B equivalent

    Abstract: 4060B RCTR14 TC74HC4060AF TC74HC4060AP 4060b pin configuration diagram
    Text: TOSHIBA TC74HC4060AP/AF TO SH IBA CM OS D IG ITAL INTEGRATED CIRCUIT SILICON M ONOLITHIC TC74HC4060AP, TC74HC4060AF 14-STA G E BINARY COUNTER/OSCILATOR The TC74HC4060A is a high speed CMOS 14 - STAGE BINARY COUNTER fabricated with silicon gate C2MOS technology.


    OCR Scan     		PDF TC74HC4060AP/AF TC74HC4060AP, TC74HC4060AF 14-STAGE TC74HC4060A 16PIN DIP16-P-300-2 75max 735TYP 4060B equivalent 4060B RCTR14 TC74HC4060AF TC74HC4060AP 4060b pin configuration diagram

    ci 4060b

    Abstract: RCTR14 4060B 4060B equivalent 4060b pin configuration diagram TC74HC4060AF TC74HC4060AP TC74HC40
    Text: TOSHIBA TC74HC4060AP/AF TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC4060AP, TC74HC4060AF 14-STAGE BINARY COUNTER/OSCILATOR The TC74HC4060A is a high speed CMOS 14 - STAGE BINARY COUNTER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent


    OCR Scan     		PDF TC74HC4060AP/AF TC74HC4060AP, TC74HC4060AF 14-STAGE TC74HC4060A 16PIN DIP16-P-300-2 75max 735TYP ci 4060b RCTR14 4060B 4060B equivalent 4060b pin configuration diagram TC74HC4060AF TC74HC4060AP TC74HC40