SEP8706 Search Results

phototransistor npn

Abstract: simple phototransistor SEP8506-003 high sensitivity reflective phototransistor phototransistor 600 nm phototransistor datasheet SDP8476 SEP8706 SDP8476-201 SEP8506
Contextual Info: SDP8476-201 Low Light Rejection Phototransistor FEATURES • Side-looking plastic package • Low light level immunity • 50¡ nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes INFRA-21.TIF

silicon photodiode

Abstract: SDP8276 SEP8506 SEP8706 fast photodiode spectrally matched photodiode
Contextual Info: SDP8276 Silicon Photodiode FEATURES • Side-looking plastic package • Linear response • Fast response time • Internal visible light rejection filter • 50¡ nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes

Contextual Info: Datasheet - SEP8706-002 SEP8706-002 SEP Series AlGaAs Infrared Emitting Diode, Side-emitting Plastic Package Representative photograph, actual product appearance may vary. Features ● ● ● ● Due to regional agency approval requirements, some products may not be

SDP8106

Abstract: SEP8506 SEP8706
Contextual Info: SDP8106 Silicon Photodarlington FEATURES • Side-looking plastic package • 50¡ nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes INFRA-79.TIF DESCRIPTION The SDP8106 is an NPN silicon photodarlington

all datasheet phototransistor

Abstract: Infrared Phototransistor SDP8406 SEP8506 SEP8706
Contextual Info: 17 September 1997 SDP8406 Silicon Phototransistor FEATURES • Side-looking plastic package • 50¡ nominal acceptance angle • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes INFRA-21.TIF

SDP8106

Abstract: SEP8506 SEP8706 Photodarlington
Contextual Info: 17 September 1997 SDP8106 Silicon Photodarlington FEATURES • Side-looking plastic package • 50¡ nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes INFRA-79.TIF DESCRIPTION The SDP8106 is an NPN silicon photodarlington molded

Contextual Info: SDP8406 Silicon Phototransistor FEATURES • Side-looking plastic package • 50° nominal acceptance angle . Wide sensitivity ranges • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes DESCRIPTION The SDP8406 is an NPN silicon phototransistor molded

Contextual Info: SEP8706 AIGaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50° nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive current • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106

Contextual Info: SDP8106 Silicon Photodarlington FEATURES • Side-looking plastic package . 50° nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes DESCRIPTION OUTLINE DIMENSIONS in inches (mm) The SDP8106 is an NPN silicon photodarlington

8276 m

Abstract: P8276
Contextual Info: SDP8276 Silicon Photodiode FEA TU R E S • Side-looking plastic package • Linear response • Fast response tim e • Internal visible light rejection filter • 50° nom inal a cceptance angle • M echanically and spectrally m atched to S EP 8506 and SEP8706 infrared em itting diodes

Contextual Info: SDP8476-201 Low Light Rejection Phototransistor FEATURES • Side-looking plastic package • Low light level immunity • 50° nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes tei&r *i i .r

SDP8406

Abstract: SDP8406-004 SDP8406-001 SDP8406-002 SDP8406-003 SEP8706
Contextual Info: SDP8406 Silicon Phototransistor INFRA-21.TIF FEATURES • Side-looking plastic package • 50° nominal acceptance angle • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8506/8526 and SEP8706 infrared emitting diodes OUTLINE DIMENSIONS in inches (mm)

SEP8706-003

Abstract: SEP8706 SEP8706-001 SDP8106 SEP8706-002
Contextual Info: SEP8706 AlGaAs Infrared Emitting Diode INFRA-20.TIF FEATURES • Side-emitting plastic package • 50° nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive current • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106

Contextual Info: SDP8106 Silicon Photodarlington FEATURES • Side-looking plastic package • 50° nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes DESCRIPTION The SDP8106 is an NPN silicon photodarlington

phototransistor application circuit

Abstract: npn phototransistor phototransistor npn all datasheet phototransistor SDP8476 simple phototransistor Infrared Phototransistor phototransistor 600 nm SDP8476-201 SEP8506-003
Contextual Info: 17 September 1997 SDP8476-201 Low Light Rejection Phototransistor FEATURES • Side-looking plastic package • Low light level immunity • 50¡ nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes

SEP8706

Abstract: Infrared Emitting Diode SDP8106 SDP8406 SDP8000
Contextual Info: 17 September 1997 SEP8706 AlGaAs Infrared Emitting Diode FEATURES • Side-looking plastic package • 50¡ nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to

R840

Abstract: NFRA-20-TIF
Contextual Info: SEP8706 AIGaAs Infrared Emitting Diode FEATURES • Side-looking plastic package • 50° nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106

SDP8276

Abstract: silicon photodiode SEP8506 SEP8706 fast photodiode spectrally matched photodiode
Contextual Info: 17 September 1997 SDP8276 Silicon Photodiode FEATURES • Side-looking plastic package • Linear response • Fast response time • Internal visible light rejection filter • 50¡ nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes

SDP8106

Abstract: SDP8406 SEP8706
Contextual Info: SEP8706 AlGaAs Infrared Emitting Diode FEATURES • Side-looking plastic package • 50¡ nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106

SDP8406

Abstract: SEP8506 SEP8706
Contextual Info: SDP8406 Silicon Phototransistor FEATURES • Side-looking plastic package • 50¡ nominal acceptance angle • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes INFRA-21.TIF DESCRIPTION The SDP8406 is an NPN silicon phototransistor molded

SDP8276

Abstract: SEP8506 SEP8706
Contextual Info: SDP8276 Silicon Photodiode FEATURES • Side-looking plastic package • Linear response • Fast response time • Internal visible light rejection filter • 50° nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes

Contextual Info: SDP8476-201 Low Light Rejection Phototransistor FEATURES . Side-looking plastic package • Low light level immunity • 50° nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes INFRA-21.TIF DESCRIPTION

Contextual Info: SEP8706 AIGaAs Infrared Emitting Diode FEATURES • Side-looking plastic package • 50° nominal beam angle • 880 nm wavelength » Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106

SEP8706

Contextual Info: Datasheet - SEP8706-003 SEP8706-003 SEP Series AlGaAs Infrared Emitting Diode, Side-emitting Plastic Package Representative photograph, actual product appearance may vary. Features ● ● ● ● Due to regional agency approval requirements, some products may not be