SI2338 Search Results

SI2338 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI2338DS-T1-BE3		Vishay Siliconix	N-CHANNEL 30-V (D-S) MOSFET	Original	PDF	251.13KB	10
SI2338DS-T1-GE3		Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 6A SOT23	Original	PDF	250.19KB

SI2338 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Si2338DS Contextual Info: SPICE Device Model Si2338DS www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C	Original	Si2338DS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Si2338DS Contextual Info: New Product Si2338DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a, e 0.028 at VGS = 10 V 6 0.033 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si2338DS 2002/95/EC OT-23 Si2338DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
si2338 Abstract: Si2338DS Contextual Info: SPICE Device Model Si2338DS Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si2338DS 11-Mar-11 si2338	PDF
Si2338DS Abstract: si2338 marking code vishay SILICONIX sot-23 si23 Contextual Info: New Product Si2338DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a, e 0.028 at VGS = 10 V 6 0.033 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si2338DS OT-23 2002/95/EC Si2338DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si2338 marking code vishay SILICONIX sot-23 si23	PDF
si2338 Abstract: Si2338DS Contextual Info: New Product Si2338DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a, e 0.028 at VGS = 10 V 6 0.033 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si2338DS OT-23 2002/95/EC Si2338DS-T1-GE3 11-Mar-11 si2338	PDF
Si2338DS Contextual Info: Si2338DS-GE3_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	Si2338DS-GE3 AN609, 5622u 5465m 7219m 5524u 6375m 9483m 7920m 10-May-11 Si2338DS	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF