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    SI4866DY Price and Stock

    Vishay Siliconix SI4866DY-T1-E3

    MOSFET N-CH 12V 11A 8SO
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    DigiKey SI4866DY-T1-E3 Digi-Reel 3,915 1
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    SI4866DY-T1-E3 Cut Tape 3,915 1
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    SI4866DY-T1-E3 Reel 2,500 2,500
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    RS SI4866DY-T1-E3 Bulk 2,500
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    Quest Components SI4866DY-T1-E3 576
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    Vishay Siliconix SI4866DY-T1-GE3

    MOSFET N-CH 12V 11A 8SO
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    DigiKey SI4866DY-T1-GE3 Digi-Reel 1
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    SI4866DY-T1-GE3 Cut Tape 1
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    SI4866DY-T1-GE3 Reel 2,500
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    Vishay Intertechnologies SI4866DY-T1-GE3

    Trans MOSFET N-CH 12V 11A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4866DY-T1-GE3)
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    Avnet Americas SI4866DY-T1-GE3 Reel 2,500
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    Vishay Intertechnologies SI4866DY-T1-E3

    Trans MOSFET N-CH 12V 11A 8-Pin SOIC N T/R
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    Verical SI4866DY-T1-E3 84 7
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    Arrow Electronics SI4866DY-T1-E3 Cut Strips 84 9 Weeks 1
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    Newark SI4866DY-T1-E3 Reel 2,500
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    Bristol Electronics SI4866DY-T1-E3 4,878
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    SI4866DY-T1-E3 4,575
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    Quest Components SI4866DY-T1-E3 3,660
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    SI4866DY-T1-E3 274
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    Velocity Electronics SI4866DY-T1-E3 246
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    Vishay Intertechnologies SI4866DY-T1

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    Bristol Electronics SI4866DY-T1 3,007
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    SI4866DY-T1 1,471
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    Quest Components SI4866DY-T1 1,176
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    SI4866DY Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si4866DY Vishay Intertechnology N-Channel Reduced Q g , Fast Switching MOSFET Original PDF
    SI4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET Original PDF
    Si4866DY SPICE Device Model Vishay N-Channel Reduced Qg, Fast Switching MOSFET Original PDF
    SI4866DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 12V 11A 8-SOIC Original PDF
    SI4866DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 12V 11A 8-SOIC Original PDF

    SI4866DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si4866DY

    Abstract: Si4866DY-T1-E3
    Text: Si4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 17 0.008 at VGS = 2.5 V 14 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs


    Original     		PDF Si4866DY Si4866DY-T1-E3 Si4866DY-T1-GE3 11-Mar-11

    dh 321

    Abstract: ceramic capacitor capacitor 1000uf 12v capacitor 1000uf -36v bat54 EMK107BJ104MA MAX1954A bat 54 1R2 DIODE u1 321
    Text: 3V to 3.6V VIN D1 BAT-54 C3 10uF 6V X5R 5 IN BST R1 68k C1 1.8nF 1 HSD 2 COMP U1 MAX1954A C2 180pF DH C5 820uF 6V MB-EXR 10 8 C6 22uF 6V L1 N1 X5R 1.2uH Si4866DY CDEP105-H C4 0.1uF 9 1.2V@7A VOUT LX DL PGND 4 GND FB 6 N2 Si4866DY 7 3 R2 5.11k R4 2.7 C8 1000uF


    Original     		PDF BAT-54 MAX1954A 180pF 820uF Si4866DY CDEP105-H 1000uF 20MHz 60mVpp dh 321 ceramic capacitor capacitor 1000uf 12v capacitor 1000uf -36v bat54 EMK107BJ104MA MAX1954A bat 54 1R2 DIODE u1 321

    Untitled

    Abstract: No abstract text available
    Text: Si4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 17 0.008 at VGS = 2.5 V 14 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs


    Original     		PDF Si4866DY Si4866DY-T1-E3 Si4866DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 17 0.008 at VGS = 2.5 V 14 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs


    Original     		PDF Si4866DY Si4866DY-T1-E3 Si4866DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    71719

    Abstract: Si4866DY S-60245 17A67
    Text: SPICE Device Model Si4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4866DY S-60245Rev. 20-Feb-06 71719 S-60245 17A67

    SI4866DY

    Abstract: SI4866DY-T1-E3
    Text: Si4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 17 0.008 at VGS = 2.5 V 14 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs


    Original     		PDF Si4866DY Si4866DY-T1-E3 Si4866DY-T1-GE3 18-Jul-08

    PH+71719

    Abstract: 71719 Si4866DY
    Text: SPICE Device Model Si4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4866DY 30-Jul-02 PH+71719 71719

    Untitled

    Abstract: No abstract text available
    Text: Si4866DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D D D D PRODUCT SUMMARY VDS V 12 rDS(on) (W) ID (A) 0.0055 @ VGS = 4.5 V 17 0.008 @ VGS = 2.5 V 14 TrenchFETr Power MOSFETS PWM Optimized for High Efficiency Low Output Voltage


    Original     		PDF Si4866DY 08-Apr-05

    Si4866DY

    Abstract: No abstract text available
    Text: Si4866DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D TrenchFETr Power MOSFETS D PWM Optimized for High Efficiency D Low Output Voltage PRODUCT SUMMARY VDS V 12 rDS(on) (W) ID (A) 0.0055 @ VGS = 4.5 V 17 0.008 @ VGS = 2.5 V


    Original     		PDF Si4866DY 02-Oct-01

    7361

    Abstract: AN609 Si4866DY
    Text: Si4866DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4866DY AN609 02-Mar-06 7361

    71719

    Abstract: Si4866DY
    Text: SPICE Device Model Si4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4866DY 18-Jul-08 71719

    SI4866DY-T1-E3

    Abstract: Si4866BDY si4866 SI4866DY RG52
    Text: Specification Comparison Vishay Siliconix Si4866BDY vs. Si4866DY Description: Package: Pin Out: N-Channel, 12-V D-S MOSFET SO-8 Identical Part Number Replacements Si4866BDY-T1-E3 Replaces Si4866DY-T1-E3 Si4866BDY-T1-E3 Replaces Si4866DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		PDF Si4866BDY Si4866DY Si4866BDY-T1-E3 Si4866DY-T1-E3 Si4866DY-T1 30-Aug-07 si4866 RG52

    Si4866DY

    Abstract: No abstract text available
    Text: Si4866DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D D D D PRODUCT SUMMARY VDS V 12 rDS(on) (W) ID (A) 0.0055 @ VGS = 4.5 V 17 0.008 @ VGS = 2.5 V 14 TrenchFETr Power MOSFETS PWM Optimized for High Efficiency Low Output Voltage


    Original     		PDF Si4866DY S-03662--Rev. 14-Apr-03

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 rDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 17 0.008 at VGS = 2.5 V 14 • • • • TrenchFET Power MOSFETS PWM Optimized for High Efficiency


    Original     		PDF Si4866DY Si4866DY-T1 Si4866DY-T1-E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: LM3495 LM3495 Emulated Peak Current Mode Buck Controller for Low Output Voltage Literature Number: SNVS410E LM3495 Emulated Peak Current Mode Buck Controller for Low Output Voltage General Description Features The LM3495 is a PWM buck regulator which implements a


    Original     		PDF LM3495 LM3495 SNVS410E

    Untitled

    Abstract: No abstract text available
    Text: TPS40007 TPS40009 SLUS589B− NOVEMBER 2003 − REVISED FEBRUARY 2005 LOWĆINPUT HIGHĆEFFICIENCY SYNCHRONOUS BUCK CONTROLLER FEATURES D Operating Input Voltage 2.25 V to 5.5 V D Output Voltage as Low as 0.7 V D 1% Internal 0.7 V Reference D Predictive Gate Drivet N-Channel MOSFET


    Original     		PDF TPS40007 TPS40009 SLUS589Bâ TPS40007, TPS40009, 10-Lead

    Untitled

    Abstract: No abstract text available
    Text: TPS40000, TPS40001 TPS40002, TPS40003 TPS40004, TPS40005 SLUS507D − JANUARY 2002 − REVISED NOVEMBER 2005 LOWĆINPUT VOLTAGEĆMODE SYNCHRONOUS BUCK CONTROLLER FEATURES D Operating Input Voltage 2.25 V to 5.5 V D Output Voltage as Low as 0.7 V D 1% Internal 0.7 V Reference


    Original     		PDF TPS40000, TPS40001 TPS40002, TPS40003 TPS40004, TPS40005 SLUS507D 10-Lead

    TPS40000

    Abstract: TPS40000DGQ TPS40000DGQR TPS40001 TPS40001DGQ TPS40002 TPS40002DGQ TPS40003 TPS40003DGQ
    Text: TPS40000, TPS40001 TPS40002, TPS40003 SLUS507A – JANUARY 2002 – REVISED JUNE 2002 LOWĆINPUT VOLTAGEĆMODE SYNCHRONOUS BUCK CONTROLLER FEATURES D Operating Input Voltage 2.25 V to 5.5 V D Output Voltage as Low as 0.7 V D 1% Internal 0.7 V Reference D Predictive Gate Drivet N-Channel MOSFET


    Original     		PDF TPS40000, TPS40001 TPS40002, TPS40003 SLUS507A TPS4000x TPS40000 TPS40000DGQ TPS40000DGQR TPS40001 TPS40001DGQ TPS40002 TPS40002DGQ TPS40003 TPS40003DGQ

    FDS6375

    Abstract: CDRH104R-2R5 1N5819HW MIC2193 MIC2193BM NDS8425 Si4403DY Si4866DY R012F
    Text: Application Hint 70 MIC2193 3.3V to 2.5V/5A with Ceramic Cout Application Circuit By Steven Chenetz General Description The MIC2193 is a 400kHz Synchronous Buck controller that uses a P-channel high-side FET. It has the advantage of running at 100% duty cycle high-side Fet


    Original     		PDF MIC2193 400kHz M9999-062506 FDS6375 CDRH104R-2R5 1N5819HW MIC2193BM NDS8425 Si4403DY Si4866DY R012F

    Untitled

    Abstract: No abstract text available
    Text: TPS40007 TPS40009 SLUS589B− NOVEMBER 2003 − REVISED FEBRUARY 2005 LOWĆINPUT HIGHĆEFFICIENCY SYNCHRONOUS BUCK CONTROLLER FEATURES D Operating Input Voltage 2.25 V to 5.5 V D Output Voltage as Low as 0.7 V D 1% Internal 0.7 V Reference D Predictive Gate Drivet N-Channel MOSFET


    Original     		PDF TPS40007 TPS40009 SLUS589B- TPS40007, TPS40009, 10-Lead TPS4000x

    866K3

    Abstract: Si4866DY SLMA002 TPS40007 TPS40007DGQ TPS40007DGQR TPS40009 TPS40009DGQ
    Text: TPS40007 TPS40009 SLUS589B− NOVEMBER 2003 − REVISED FEBRUARY 2005 LOWĆINPUT HIGHĆEFFICIENCY SYNCHRONOUS BUCK CONTROLLER FEATURES D Operating Input Voltage 2.25 V to 5.5 V D Output Voltage as Low as 0.7 V D 1% Internal 0.7 V Reference D Predictive Gate Drivet N-Channel MOSFET


    Original     		PDF TPS40007 TPS40009 SLUS589B- TPS40007, TPS40009, 10-Lead 866K3 Si4866DY SLMA002 TPS40007 TPS40007DGQ TPS40007DGQR TPS40009 TPS40009DGQ

    71917

    Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
    Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller


    Original     		PDF AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds

    Untitled

    Abstract: No abstract text available
    Text: TPS40007 TPS40009 SLUS589B− NOVEMBER 2003 − REVISED FEBRUARY 2005 LOWĆINPUT HIGHĆEFFICIENCY SYNCHRONOUS BUCK CONTROLLER FEATURES D Operating Input Voltage 2.25 V to 5.5 V D Output Voltage as Low as 0.7 V D 1% Internal 0.7 V Reference D Predictive Gate Drivet N-Channel MOSFET


    Original     		PDF TPS40007 TPS40009 SLUS589B- TPS40007, TPS40009, 10-Lead TPS4000x

    Untitled

    Abstract: No abstract text available
    Text: TPS40007 TPS40009 SLUS589B− NOVEMBER 2003 − REVISED FEBRUARY 2005 LOWĆINPUT HIGHĆEFFICIENCY SYNCHRONOUS BUCK CONTROLLER FEATURES D Operating Input Voltage 2.25 V to 5.5 V D Output Voltage as Low as 0.7 V D 1% Internal 0.7 V Reference D Predictive Gate Drivet N-Channel MOSFET


    Original     		PDF TPS40007 TPS40009 SLUS589B- TPS40007, TPS40009, 10-Lead TPS4000x