SI599 Search Results

s1124

Contextual Info: SPICE Device Model Si5999EDU www.vishay.com Vishay Siliconix Dual P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the

77503

Contextual Info: Si5999EDU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

SILICONIX MARKING si5999edu-t1-ge3

Contextual Info: Si5999EDU Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.059 at VGS = - 4.5 V - 6a 0.096 at VGS = - 2.5 V - 6a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si570

Abstract: Si571 reg137 Si598 Si570 an334 155.520000 Si599 AN104 AN141 AN198
Contextual Info: AN334 Si57 X /598/599 ANSI C R E F E R E N CE D E S I G N WI T H O P T I O N A L N O N - VO L A T I L E O UT P UT F R E Q UE N C Y 1. Introduction Because each Si570/Si571/Si598/Si599 programmable XO/VCXO has a unique crystal frequency, it is necessary to perform the frequency conversion calculations for every new desired output frequency for each programmable

Contextual Info: Si5999EDU Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.059 at VGS = - 4.5 V - 6a 0.096 at VGS = - 2.5 V - 6a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si5997DU Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 6a 0.088 at VGS = - 4.5 V - 6a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

SI5999EDU

Abstract: SILICONIX MARKING si5999edu-t1-ge3
Contextual Info: Si5999EDU Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.059 at VGS = - 4.5 V - 6a 0.096 at VGS = - 2.5 V - 6a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si5997DU Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 6a 0.088 at VGS = - 4.5 V - 6a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si5997DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: Si5997DU Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 6a 0.088 at VGS = - 4.5 V - 6a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si5999EDU Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.059 at VGS = - 4.5 V - 6a 0.096 at VGS = - 2.5 V - 6a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si5999EDU Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.059 at VGS = - 4.5 V - 6a 0.096 at VGS = - 2.5 V - 6a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si5997DU Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 6a 0.088 at VGS = - 4.5 V - 6a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

si5997

Abstract: S11-0403 Si5997DU
Contextual Info: SPICE Device Model Si5997DU Vishay Siliconix Dual P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Si5997DU

Abstract: si5997
Contextual Info: Si5997DU Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 6a 0.088 at VGS = - 4.5 V - 6a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

si5999

Abstract: SILICONIX MARKING si5999edu-t1-ge3
Contextual Info: Si5999EDU Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.059 at VGS = - 4.5 V - 6a 0.096 at VGS = - 2.5 V - 6a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

SILICONIX MARKING si5999edu-t1-ge3

Contextual Info: Si5999EDU Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.059 at VGS = - 4.5 V - 6a 0.096 at VGS = - 2.5 V - 6a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: V i s h ay I n te r tec h n olo g y, I n c . Power mosfets Powe rPA K ChipFET® M O S F E ts Product Sheet 3 W Maximum Power Dissipation in Compact 3 mm x 1.8 mm Footprint Area: Replace TSOP-6 and SO-8 MOSFETs for Lower Thermal Resistance and Smaller Footprints

si570

Abstract: Si552 1.8 GHz SAW oscillator ADC 10 Ghz Si571 Si534 Si550 SI595 375 07 Si599
Contextual Info: Frequency Control Solutions THE NEW STANDARD IN FREQUENCY CONTROL FEATURES • Wide range of operation: 10 MHz to 1.4 GHz • Two week lead time for samples pf any frequency • Superior jitter performance: <0.3 psRMS typ • Any frequency, quad, dual and single

J11-J17

Abstract: SiLabs 570 Si571 Si570 si514 SI510
Contextual Info: Si5xx/514/570-PROG-EVB S i 5 1 4 / 5 7 0 / 5 7 1 / 5 9 8 / 5 9 9 A NY - F R E Q UE N C Y I 2 C PROGRAMMABLE XO/VCXO EVALUATION BOARD Description Features The Silicon Laboratories Si514/570/571/598/599 evaluation kit contains the hardware and software needed for evaluation of the Si514/570/571/598/599

Si542

Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . power mosfets MOSFETs – 3 W Maximum PD in Compact 3 mm x 1.8 mm Outline PowerPAK ChipFET® Replace TSOP-6 and SO-8 MOSFETs for Lower Thermal Resistance and Smaller Footprints Key Benefits • Advanced thermal performance in a compact 3 mm by 1.8 mm footprint

SI570

Abstract: virtex-7 virtex7 Si571 Si598 Si5324 Spartan-6 FPGA Si5368 Si599 VIRTEX-6
Contextual Info: Silicon Labs and Altera/Xilinx Timing Solutions Cross-Reference Guide Ideal for Clocking FPGAs • Multiple Altera and Xilinx FPGA reference designs  Combination of frequency flexibility and jitter performance ideal for FPGAs  High power supply noise rejection minimizes impact

Silabs

Abstract: si597 SI598
Contextual Info: Si 5 97 Q UAD F R E Q U E N C Y VO L TAG E - C O N T R O L L E D C RYSTAL O SCILLATOR V C X O 1 0 TO 810 MH Z Features   Available with any-frequency output from 10 to 810 MHz  4 selectable output frequencies  3rd generation DSPLL with superior jitter performance

v0615a

Contextual Info: Vishay Intertechnology, Inc. Computer Stationary Computing One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Computer Stationary Computing Servers 4 Embedded Systems 5 Solid-State Discs SSDs 6 UPS 7