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    SI9430 Price and Stock

    Vishay Siliconix SI9430DY-T1

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    Bristol Electronics SI9430DY-T1 3,248
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    SI9430DY-T1 1,125
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    SI9430DY-T1 555 9
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    Quest Components SI9430DY-T1 6,845
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    SI9430DY-T1 444
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    SI9430DY-T1 304
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    Vishay Siliconix SI9430DY

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    Bristol Electronics SI9430DY 2,884
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    SI9430DY 1,125
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    Quest Components SI9430DY 1,440
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    SI9430DY 1,313
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    SI9430DY 900
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    SI9430DY 584
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    SI9430DY 168
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    SI9430DY 113
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    SI9430DY 72
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    SI9430DY 40
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    SI9430DY 16
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    ComSIT USA SI9430DY 8,707
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    Fairchild Semiconductor Corporation SI9430DY

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    Bristol Electronics SI9430DY 1,934
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    Quest Components SI9430DY 6,239
    • 1 $0.81
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    Vishay Intertechnologies SI9430DY-T1

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    Bristol Electronics SI9430DY-T1 1,281
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    SI9430DY-T1 430
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    Quest Components SI9430DY-T1 1,024
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    SI9430DY-T1 344
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    Vishay Siliconix SI9430DYT1

    P-CHANNEL 20-V (D-S) MOSFET Small Signal Field-Effect Transistor, 5.8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SI9430DYT1 49,005
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    Chip 1 Exchange SI9430DYT1 743
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    Find more SI9430 price and stock on Findchips.com

    SI9430 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si9430DY Fairchild Semiconductor Single P-Channel Enhancement Mode MOSFET Original PDF
    SI9430DY Fairchild Semiconductor Single P-Channel Enhancement Mode MOSFET Original PDF
    SI9430DY Siliconix P-Channel Enhancement-Mode MOSFET Original PDF
    Si9430DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    Si9430DY Vishay Intertechnology P-Channel 20-V (D-S) MOSFET Original PDF
    SI9430DY Vishay Telefunken P-channel 30-v (d-s) Mosfet Original PDF
    SI9430DY Siliconix Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, P-Channel, -20V, Single, Pkg Style SO-8 Scan PDF
    SI9430DY-DS Vishay Telefunken DS-Spice Model for Si9430DY Original PDF
    Si9430DY SPICE Device Model Vishay P-Channel 30-V (D-S) MOSFET Original PDF
    SI9430DY-T1 Vishay Intertechnology P-Channel 20-V (D-S) MOSFET Original PDF

    SI9430 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si9430DY

    Abstract: No abstract text available
    Text: Si9430DY Siliconix PĆChannel EnhancementĆMode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = -10 V "5.8 0.065 @ VGS = -6 V "4.9 0.090 @ VGS = -4.5 V "4.0 -20 S S S SOĆ8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D Top View G D D D D PĆChannel MOSFET


    Original     		PDF Si9430DY P-38889--Rev.

    si9405dy

    Abstract: Si6447DQ Si9430DY
    Text: Si9405DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –10 V "4.3 0.16 @ VGS = –4.5 V "3.4 Recommended upgrade: Si9430DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6447DQ S S SO-8 NC 1 8


    Original     		PDF Si9405DY Si9430DY Si6447DQ S-47958--Rev. 15-Apr-96

    Si4435DY

    Abstract: Si4953DY Si6435DQ Si9430DY
    Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S


    Original     		PDF Si9430DY Si4435DY Si4953DY Si6435DQ S-51360--Rev. 18-Dec-96

    si9405dy

    Abstract: Si6447DQ Si9430DY
    Text: Si9405DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –10 V "4.3 0.16 @ VGS = –4.5 V "3.4 Recommended upgrade: Si9430DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6447DQ S S SO-8 NC 1 8


    Original     		PDF Si9405DY Si9430DY Si6447DQ S-47958--Rev. 15-Apr-96

    Si9430DY

    Abstract: Si4435DY Si4953DY Si6435DQ
    Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ


    Original     		PDF Si9430DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96

    Si4435DY

    Abstract: Si4953DY Si6435DQ Si9430DY
    Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S


    Original     		PDF Si9430DY Si4435DY Si4953DY Si6435DQ S-51360--Rev. 18-Dec-96

    Si9430DY

    Abstract: No abstract text available
    Text: Si9430DY Single P-Channel Enhancement Mode MOSFET General Description Features This P-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si9430DY

    Untitled

    Abstract: No abstract text available
    Text: Si9430DY* Single P-Channel Enhancement Mode MOSFET General Description Features This P-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si9430DY

    Si9430DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si9430DY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si9430DY 01-Jun-04

    si9405dy

    Abstract: Si6447DQ Si9430DY
    Text: Si9405DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –10 V "4.3 0.16 @ VGS = –4.5 V "3.4 Recommended upgrade: Si9430DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6447DQ S S SO-8 NC 1 8


    Original     		PDF Si9405DY Si9430DY Si6447DQ S-47958--Rev. 15-Apr-96

    Untitled

    Abstract: No abstract text available
    Text: Si9430DY Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 20 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET


    Original     		PDF Si9430DY 08-Apr-05

    Si9430DY

    Abstract: No abstract text available
    Text: Si9430DY Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 20 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET


    Original     		PDF Si9430DY S-00652--Rev. 27-Mar-00

    Si9430DY

    Abstract: Si4435DY Si4953DY Si6435DQ SI9430DY equivalent
    Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ


    Original     		PDF Si9430DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96 SI9430DY equivalent

    Si9430DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si9430DY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si9430DY 05-Nov-99

    SI9430DY

    Abstract: No abstract text available
    Text: Si9430DY* Single P-Channel Enhancement Mode MOSFET General Description Features This P-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si9430DY

    Untitled

    Abstract: No abstract text available
    Text: PWM/PFM STEP-DOWN COMBINATION REGULATOR/CONTROLLER TC120 PWM/PFM STEP-DOWN COMBINATION REGULATOR/CONTROLLER FEATURES GENERAL DESCRIPTION • TC120 is a 300 KHz PFM/PWM step-down Buck DC/ DC regulator/controller combination for use in systems operating from two or more cells, or in line-powered applications. It uses PWM as the primary modulation scheme, but


    Original     		PDF TC120 TC120 TC120-1 D-82152

    SI943ODY

    Abstract: RLS4148 146818A 146818 74HCT74 DATASHEET 74HCT08 74HCT74 SI9430DY RB400D SC300
    Text: Élan SC300 and Élan™SC310 Microcontrollers Solution For Systems Using A Back-Up Battery Application Note The Élan™SC300 and ÉlanSC310 microcontrollers referred to in this document as ÉlanSC300 have a few issues that need to be addressed when using a back-up battery as a secondary power


    Original     		PDF lanTMSC300 lanTMSC310 lanSC310 lanSC300) lanSC300 46818A-compatible SC300 SI943ODY RLS4148 146818A 146818 74HCT74 DATASHEET 74HCT08 74HCT74 SI9430DY RB400D

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original     		PDF

    s134 p-mosfet

    Abstract: 74hc260 Mitsumi D359T3 D359T3 schematic diagram inverter lcd monitor fujitsu 62256-10 BERG STRIP teac fd 235hf stepping motor mitsumi mitsumi floppy
    Text: frt Page 1 Thursday, August 8, 1996 12:36 PM ÉlanSC300 Microcontroller Evaluation Board User’s Manual evalbd.book : frt Page 2 Thursday, August 8, 1996 12:14 PM ÉlanSC300 Microcontroller Evaluation Board, Revision 1.1 1996 by Advanced Micro Devices, Inc.


    Original     		PDF lanSC300 s134 p-mosfet 74hc260 Mitsumi D359T3 D359T3 schematic diagram inverter lcd monitor fujitsu 62256-10 BERG STRIP teac fd 235hf stepping motor mitsumi mitsumi floppy

    Untitled

    Abstract: No abstract text available
    Text: Tem ic SÌ9405DY Se m ic o n d u c to r s P-Channel Enhancement-Mode MOSFET Product Summary V d s V rDS(on) (Q ) 20 I d (A) 0.10 @ VGS = -1 0 V ±4.3 0.16 @ Vc s = -4.5 V ±3.4 Recommended upgrade: Si9430DY Lower profile/smaller size— see LITE FOOT equivalent: Si6447DQ


    OCR Scan     		PDF 9405DY Si9430DY Si6447DQ S-47958-- 15-Apr-96 S2SM735 0017flin

    SI9405DY

    Abstract: 6T1D
    Text: SÌ9405DY P-Channel Enhancement-Mode MOSFET Product Summary V d s V 20 r DS(on) (ß ) I d (A) 0.10 @ Vos = -1 0 V ± 4.3 0.16 @ Vg s = ^ . 5 V ± 3.4 Recommended upgrade: Si9430DY Lower profile!smaller size—see LITE FOOT equivalent: Si6447DQ S Q S Q


    OCR Scan     		PDF 9405DY Si9430DY Si6447DQ S-47958--Rev. 15-Apr-96 SI9405DY 6T1D

    P3482

    Abstract: No abstract text available
    Text: T e m ic SÌ9405DY P-Channel Enhancement-Mode MOSFET Product Summary rDS on (ß ) Id (A) 0.10 @ Vos = - i o v ±4.3 0.16 @ VGs = -4.5 V ±3.4 VDS(V) -2 0 Recommended, upgrade: Si9430D Y L ow er profile I sm aller size— see L IT E F O O T equivalent: Si6447D Q


    OCR Scan     		PDF 9405DY Si9430D Si6447D P-34826-- 9405DY_ P3482

    T0252AA

    Abstract: T0263 IRF7205 BSS83 IRFR5305 T0-220AB IRF7204 IRF7304 SI4465DY SI4963DY
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4465D Y SI4965D Y IR F7204 IR F7304 SI4963D Y SI9430D Y SI9435D Y SI9933A D Y SI9953D Y IR F7205 IR F7406 IR F7416 S I4431A D Y


    OCR Scan     		PDF SI4465DY SI4965DY IRF7204 IRF7304 SI4963DY SI9430DY SI9435DY SI9933ADY SI9953DY IRF7205 T0252AA T0263 BSS83 IRFR5305 T0-220AB

    Untitled

    Abstract: No abstract text available
    Text: u n ü \ i£ TECHNOLOGY LTCH48 L T C l l 4 8 - 3 . 3 / L T C 1 1 48-5 High EfficiencySynchronous Stepdown Switching Regulator N o v e m b e r 19 9 2 D C S C R IP T IO N • Ultra High Efficiency over 95% possible ■ Current M ode Operation fo r Excellent Line & Load


    OCR Scan     		PDF LTCH48 archi02-15