SI9430 Search Results

Si9430DY

Contextual Info: Si9430DY Siliconix PĆChannel EnhancementĆMode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = -10 V "5.8 0.065 @ VGS = -6 V "4.9 0.090 @ VGS = -4.5 V "4.0 -20 S S S SOĆ8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D Top View G D D D D PĆChannel MOSFET

si9405dy

Abstract: Si6447DQ Si9430DY
Contextual Info: Si9405DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –10 V "4.3 0.16 @ VGS = –4.5 V "3.4 Recommended upgrade: Si9430DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6447DQ S S SO-8 NC 1 8

Si4435DY

Abstract: Si4953DY Si6435DQ Si9430DY
Contextual Info: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S

Contextual Info: Tem ic SÌ9405DY Se m ic o n d u c to r s P-Channel Enhancement-Mode MOSFET Product Summary V d s V rDS(on) (Q ) 20 I d (A) 0.10 @ VGS = -1 0 V ±4.3 0.16 @ Vc s = -4.5 V ±3.4 Recommended upgrade: Si9430DY Lower profile/smaller size— see LITE FOOT equivalent: Si6447DQ

SI9405DY

Abstract: 6T1D
Contextual Info: SÌ9405DY P-Channel Enhancement-Mode MOSFET Product Summary V d s V 20 r DS(on) (ß ) I d (A) 0.10 @ Vos = -1 0 V ± 4.3 0.16 @ Vg s = ^ . 5 V ± 3.4 Recommended upgrade: Si9430DY Lower profile!smaller size—see LITE FOOT equivalent: Si6447DQ S Q S Q

si9405dy

Abstract: Si6447DQ Si9430DY
Contextual Info: Si9405DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –10 V "4.3 0.16 @ VGS = –4.5 V "3.4 Recommended upgrade: Si9430DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6447DQ S S SO-8 NC 1 8

Si9430DY

Abstract: Si4435DY Si4953DY Si6435DQ
Contextual Info: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ

Si4435DY

Abstract: Si4953DY Si6435DQ Si9430DY
Contextual Info: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S

Si9430DY

Contextual Info: Si9430DY Single P-Channel Enhancement Mode MOSFET General Description Features This P-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Contextual Info: Si9430DY* Single P-Channel Enhancement Mode MOSFET General Description Features This P-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

P3482

Contextual Info: T e m ic SÌ9405DY P-Channel Enhancement-Mode MOSFET Product Summary rDS on (ß ) Id (A) 0.10 @ Vos = - i o v ±4.3 0.16 @ VGs = -4.5 V ±3.4 VDS(V) -2 0 Recommended, upgrade: Si9430D Y L ow er profile I sm aller size— see L IT E F O O T equivalent: Si6447D Q

Si9430DY

Contextual Info: SPICE Device Model Si9430DY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

T0252AA

Abstract: T0263 IRF7205 BSS83 IRFR5305 T0-220AB IRF7204 IRF7304 SI4465DY SI4963DY
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4465D Y SI4965D Y IR F7204 IR F7304 SI4963D Y SI9430D Y SI9435D Y SI9933A D Y SI9953D Y IR F7205 IR F7406 IR F7416 S I4431A D Y

si9405dy

Abstract: Si6447DQ Si9430DY
Contextual Info: Si9405DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –10 V "4.3 0.16 @ VGS = –4.5 V "3.4 Recommended upgrade: Si9430DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6447DQ S S SO-8 NC 1 8

Si9430DY

Contextual Info: Si9430DY Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 20 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET

Si9430DY

Abstract: Si4435DY Si4953DY Si6435DQ SI9430DY equivalent
Contextual Info: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ

Si9430DY

Contextual Info: SPICE Device Model Si9430DY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si9430DY

Contextual Info: Si9430DY Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 20 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET

SI9430DY

Contextual Info: Si9430DY* Single P-Channel Enhancement Mode MOSFET General Description Features This P-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Contextual Info: PWM/PFM STEP-DOWN COMBINATION REGULATOR/CONTROLLER TC120 PWM/PFM STEP-DOWN COMBINATION REGULATOR/CONTROLLER FEATURES GENERAL DESCRIPTION • TC120 is a 300 KHz PFM/PWM step-down Buck DC/ DC regulator/controller combination for use in systems operating from two or more cells, or in line-powered applications. It uses PWM as the primary modulation scheme, but

Contextual Info: u n ü \ i£ TECHNOLOGY LTCH48 L T C l l 4 8 - 3 . 3 / L T C 1 1 48-5 High EfficiencySynchronous Stepdown Switching Regulator N o v e m b e r 19 9 2 D C S C R IP T IO N • Ultra High Efficiency over 95% possible ■ Current M ode Operation fo r Excellent Line & Load

SI943ODY

Abstract: RLS4148 146818A 146818 74HCT74 DATASHEET 74HCT08 74HCT74 SI9430DY RB400D SC300
Contextual Info: Élan SC300 and Élan™SC310 Microcontrollers Solution For Systems Using A Back-Up Battery Application Note The Élan™SC300 and ÉlanSC310 microcontrollers referred to in this document as ÉlanSC300 have a few issues that need to be addressed when using a back-up battery as a secondary power

mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local

s134 p-mosfet

Abstract: 74hc260 Mitsumi D359T3 D359T3 schematic diagram inverter lcd monitor fujitsu 62256-10 BERG STRIP teac fd 235hf stepping motor mitsumi mitsumi floppy
Contextual Info: frt Page 1 Thursday, August 8, 1996 12:36 PM ÉlanSC300 Microcontroller Evaluation Board User’s Manual evalbd.book : frt Page 2 Thursday, August 8, 1996 12:14 PM ÉlanSC300 Microcontroller Evaluation Board, Revision 1.1 1996 by Advanced Micro Devices, Inc.