SIEMENS 4060 Search Results

TMT Isolator

Abstract: BR306 dioda switching photo transistor til 78 SFH609 F4183
Contextual Info: SIEMENS AKTIENGESELLSCHAF M7E D • 023SbOS D D 2 7 2 m S ■ SIEG 1=41-83 SIEMENS SFH609 SERIES HIGH RELIABILITY PHOTOTRANSISTOR OPTOCOUPLER Package D im ensions in Inches m m 307(7 6) .291 {7 4) 35616 Sì 248(6 3) E Œ E 3 3 3 ANOCE [T k CATHODE [ Ï NCH

t418

Abstract: Siemens optocoupler IL
Contextual Info: SIEMENS A K T I E N 6ESELLSCHAF M7 E D • fi23SbDS □ □STi'iM S ■ SIEG 1=41-83 SFH609 SERIES S IE M E N S HIGH RELIABILITY PHOTOTRANSISTOR OPTOCOUPLER Package Dimensions in Inchesfmm 307I?BI -291 7 ^ LJ FEATURES Maximum Ratings • • • • Emitter (GaAs infrared emitter)

Phototransistor SFH 600-2

Contextual Info: SIEMENS SFH600 SERIES TRIOS ' PHOTOTRANSISTOR OPTOCOUPLER • • • • • • • Package Dimensions in Inches mm P in O n e ID t ^~]Base Anode ¡ X Cathode |~2~ jQCollector ncs: T 1 Emitter 335(8.50) 343(8.70} 3 0 0 (7 62) ^ iyp. € 1 B " ty p D E S C R IP T IO N

ic 4060 pin diagram

Abstract: ic 4060 pin configuration diagram 4060 PIN DIAGRAM ic 4060 16 pin smd transistor rc1 4060 pin configuration diagram Siemens 4060 ic cd 4060 pin diagram TDE4060 ic 4060 of 16 pin pin diagram
Contextual Info: TDE 4060 TDE 4061 IR Preamplifiers Bipolar IC Type Ordering Code Package TDE 4060 Q 67000-A 8134 P-DIP-8 TDE 4060 G Q 67000-A 8135 sim ilar to P-DSO-8 SMD TDE 4061 Q 67000-A 8136 P-DIP-14 TDE 4061 G Q 67000-A 8137 P-DSO-14(SMD) Features • • • • •

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

74LS82

Abstract: 74245 BIDIRECTIONAL BUFFER IC ic 4583 schmitt trigger core bit excess 3 adder using IC 7483 advantages for ic 7473 4 BIT COUNTER 74669 la 4508 ic schematic diagram XF107 74295 random number generator by using ic 4011 and 4017
Contextual Info: General Features The SCxD4 series of high performance CMOS gate arrays offers the user the ability to realise customised VLSI inte­ grated circuits featuring the speed performance previously obtainable only with bipolar technologies whilst retaining all the advantages of CMOS technology; low power consum p­

SAB16C450

Abstract: SAB 82C50P 82C50
Contextual Info: SAB 82C50/SAB16C450 Universal Asynchronous Receiver/Transmitter Preliminary • Easily interfaces to most popular microprocessors • Adds or deletes standard asynchronous communication bits start, stop, and parity to or from a serial data stream • Holding and shift registers eliminate the

sab 16c450

Abstract: 82C50 s35j SAB16C450
Contextual Info: SAB 82C50/SAB16C450 Universal Asynchronous Receiver/Transmitter • Easily interfaces to most popular microprocessors • Adds or deletes standard asynchronous communication bits start, stop, and parity to or from a serial data stream • Holding and shift registers eliminate the

40673 MOSFET

Abstract: MFE131 mosfet 3SK77GR 3N159 40673 MPF201 MFE521 3SK77BL 3N200 MOSFET 3SK107F
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR OSS M loss Max (A) Po Max (W) ros (on) (Ohms) 9FS Min (S) VGS(th) Max (V) Cln Max (F) tr Max (s) tt Max (s) Toper Max (OC) Package Style N-Channel Dual-Gate T trode, (Cont' d) 5 10 BF964 BF966 BF966 BF966 3SK107E

opto coupler siemens

Abstract: IC AL 6001
Contextual Info: C A P I T A L / OP TO 'D~"| ñ 2 3 b 3 a b G O G B B B S 7 j SIEM ENS D>Cy/-/3 SFH600 SERIES PHOTOTRANSISTOR OPTOCOUPLER Package Dimensions in Inches mm 1 ? 3 4 5 6 ANODE CATHODE NOT CONNECTED EMITTER COLLECTOR B A SE M a x im u m R a tin g s FEATURES •

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:

SIEMENS MICROWAVE RADIO

Abstract: Bosch radar GSM1800 GSM900 RG316U mercedes uwb radar
Contextual Info: Data sheet Rev 1.2 01.08.2009 Precompliance EMC Test Antenna HyperLOG 30xxx series Logarithmic Periodic Antenna. Spans 380MHz to 18GHz Ultimate functionality and elegant design at a revolutionary price Highlights: Only a single broadband antenna for the

Heft 10

Abstract: MATSUA RELAIS Funkamateur Siemens Halbleiter
Contextual Info: Wolfgang Sammet CE-Zeichen für Bauelemente? – Nein danke! Die Kennzeichnung von Produkten mit dem europäischen CE-Konformitätskennzeichen soll den freien Warenverkehr innerhalb der Europäischen Union EU vereinfachen. Prüfungen nach harmonisierten Normen stellen dabei in der

Contextual Info: Wolfgang Sammet CE-Zeichen für Bauelemente? – Nein danke! Die Kennzeichnung von Produkten mit dem europäischen CE-Konformitätskennzeichen soll den freien Warenverkehr innerhalb der Europäischen Union EU vereinfachen. Prüfungen nach harmonisierten Normen stellen dabei in der

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35

80L14C

Abstract: dorman smith fuses 30H07C 10 M09C 106m1 3NW211 edison bs88 dorman smith 100 amp 4H07C l14c
Contextual Info: HRCII CURRENT LIMITING FUSES 600V a.c. or less, 250V d.c. 200,000 A.I.R. to CSA C22.2 No. 106 M92 Edison HRCII Fuses - Engineered for long life reliable protection. Non deteriorating silver plated links. High grade ceramic bodies. Plated external metalwork.

FZH115B

Abstract: fzh261 FZK105 FZH131 FZJ111 FZH115 FZH205 Multiplexer IC 74151 FZH265B 74LS104
Contextual Info: Digital I.C.s, 74INTEGRATED CIRCUITS DIGITAL TTL, 74LS & 74HC Series Quad 2-input NAND gate Quad 2-input NAND gate, open collector Quad 2-input NOR gate Quad 2-input NOR gate, open collector Hex inverter Hex inverter, O/C collector Hex inverter, Buffer 30V O/P

1121SAD

Abstract: Mototrola K 023 D004H PEB2252 D168H SFH0 6063-TS
Contextual Info: ICs for Communications DSP Embedded Line and Port Interface Controller DELIC-LC PEB 20570 Version 2.1 DELIC-PB PEB 20571 Version 2.1 Preliminary Data Sheet 2003-08 DS 1.1 PEB 20570 PEB 20571 Revision History: Current Version: 2003-08 Previous Version: 07.99

IXYN 82N120C3

Abstract: 82N120C3 IXYN82N120C3 ixyn82n120 ixyn
Contextual Info: Advance Technical Information IXYN82N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM 1200 1200 V V Continuous

82N120C3

Contextual Info: Preliminary Technical Information IXYN82N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ VGES VGEM 1200 1200 V V Continuous

Contextual Info: 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXYB82N120C3H1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 82A 3.2V 93ns PLUS264TM Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

82N120C3

Contextual Info: Advance Technical Information 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXYN82N120C3 High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM 1200 1200 V V Continuous

IXYH82N120C3

Abstract: DS100335
Contextual Info: Advance Technical Information IXYH82N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 82A 3.2V 93ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXYN82N120C3H1 High-Speed IGBT for 20-50 kHz Switching Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM Continuous Transient ±20 ±30 V