SIEMENS IGBT CHIP Search Results

A 3150V

Abstract: HIGH VOLTAGE DIODE 3.3kv 3150v IGBT 3kv Measurement of stray inductance for IGBT FZ1200R33KF1 scsoa IC A 3150V eupec igbt 3.3kv dc motor speed control circuit diagram with IGBT
Contextual Info: Improved Characteristics of 3.3kV IGBT Modules M.Hierholzer, R.Bayerer, eupec GmbH & Co KG, Warstein, Germany A.Porst, H.Brunner, Siemens AG, München, Germany 3.3kV IGBT modules are available on the market since beginning of 1996. In most applications the IGBT

Eupec Power Semiconductors 600v bsm

Abstract: BSM300GB60DN2 eupec igbt BSM 100 gb Eupec BSM siemens igbt 200 A WELDING INVERTER DESIGN BY IGBT
Contextual Info: A New Generation of 600V IGBT-Modules Dipl.-Ing. Jürgen Göttert, eupec GmbH & Co KG, Warstein Dipl.-Ing. Andreas Karl, eupec GmbH & Co KG, Warstein Dipl.-Ing. Thomas Laska, SIEMENS, München Dr. Ing. Anton Mauder, SIEMENS, München Dipl.-Ing. Wolfgang Scholz, SIEMENS, München

Contextual Info: SIEMENS Inhalt Typenübersicht SIPMOS-Leistungstransistoren. 9 FRED-Dioden. 14 Alphanumerische Typenliste Typ, Bestellnummer, Seite.15

6.5kV IGBT

Abstract: IGBT Power Module siemens ag infineon igbt reliability siemens IGBT 600a eupec igbt 6500v igbt 6.5kv SiC IGBT High Power Modules, PCIM Hongkong Measurement of stray inductance for IGBT IGBT module FZ siemens igbt inverters
Contextual Info: 6.5kV IGBT-Modules Franz Auerbach Infineon Technologies Josef Georg Bauer (Siemens AG) Manfred Glantschnig (Infineon Technologies) Jürgen Göttert (eupec GmbH & Co KG) Martin Hierholzer (eupec GmbH & Co KG) Alfred Porst (Infineon Technologies) Daniel Reznik (Siemens AG)

BT diode

Abstract: ECONOPACK mounting instructions bsm 25 gd 1200 n2 bsm 75 gd 120 n2 bsm 50 gd 120 n2 calculation of IGBT snubber siemens igbt BSM 200 GA 120 BSM15GD120DN2 diode bym 26 siemens igbt BSM 100
Contextual Info: Technische Angaben Technical Information SIEMENS 1 Übersicht IGBT-Module 1 O verview IG BT Modules Hochsperrende spannungsgesteuerte Bipolar-Module Insulated Gate Bipolar Transistor modules Produktpalette Product Range IGBT-Module mit den Spannungen 600 V,

inhalt liste

Contextual Info: SIEMENS Inhalt Inhaltsverzeichnis Table of Contents Seite Content Page Typenübersicht Selection Guide SIPMOS-Leistungstransistoren.9 IGBT-Transistoren. 12 FRED Schnelle Dioden.13 SIPMOS Power Transistors.9

siemens igbt BSM 200 GA 120

Abstract: 1C00 siemens bsm 284 f siemens R9
Contextual Info: bGE » • flEBSbOS 0045^20 b3^ * S I E 6 SIEMENS SIEMENS AKTIEN6ESELLSCHAF BSM 300 GA 100 D IGBT Module Preliminary Data VCE = 1000 V / c = 400 A at Tc = 25 C / c = 300 A at Tc = 80 C • • • • • Power module Single switch Including fast free-wheel diodes

siemens igbt BSM 300

Abstract: siemens igbt BSM 200 GA 120 NC4000
Contextual Info: ta□ E D • SIEMENS ÖEBSbOS GDMSTEfl T2T ISIE6 SIEMENS AKTIENGESELLSCHAF -r -3 9 -^ 5 BSM 300 GA 120 D IGBT Module Preliminary Data VCE = 1200 V = 400 A at Tc = 25 C = 300 A at 80 'C Ic Ic Tc = • Power module • Single switch • Including fast free-wheel diodes

Contextual Info: bOE D • flSBStiOS 004577b Û1G SIEMENS ISIEG SIEMENS AKTIENGESELLSCHAF BSM 05 GD 100 D IGBT Module Preliminary Data y CE = 1000 v I c = 6 x 5.5 A at J c = 25 C / c = 6 x 5.0 A at Tc = 40 C • Power module • 3-phase full bridge • Including fast free-wheel diodes

siemens ha 8000

Abstract: BSM 214 A siemens igbt BSM 50 gb 100 d 235L C160 siemens igbt BSM 50 gb 120 d
Contextual Info: bGE D • ôS3SbDS 0QM5ÔMÛ Ö37 ■ S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF T ’ Z d r C IGBT Module Preliminary Data ft BSM50GB120D BSM50GAL120D = V CE 1200 V / c = 2 x 70 A at T c = 25 C / c = 2 x 50 A at 80 C Tc = • • • • • Power module H alf-bridge/Chopper

BSM15GD120D

Abstract: 14V-12 vm305171 C160 QD45
Contextual Info: bOE D • ä23SbOS 0Q45Û00 'ibT « S I E G SIEMENS SIEMENS AKTIEN6ESELLSCHAF ~ r ^ ¿ 2 3 ' ~ 0 ’7 IGBT Module Preliminary Data BSM15GD120D VCE = 1200 V / c = 6 x 25 A at T c = 25 C / c = 6 x 15 A at r c = 80"C • Power module • 3-phase full bridge • Including fast free-wheel diodes

siemens igbt BSM 75 gb 100

Abstract: siemens igbt BSM 150 Gb 160 d AL100-D Q102 C67076-A2104-A2 siemens igbt BSM 150 gb 100 d BSM 75 GB 120 D siemens igbt BSM 100 gb BSM 225 IGBT Power Module sieg
Contextual Info: LOE D • ä235bDS 0045flSb ^03 « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF ? BSM 75 GB 100 D BSM 75 GAL 100 D IGBT Module Preliminary Data V CE = 1000 V / c = 2 x 100 A at r c = 25 "C / c = 2 x 75 A at T c = 80 C • • • • • Power m odule Half-bridge/Chopper

BSM200GA100D

Abstract: bsm200ga100 siemens igbt BSM 200 GA 120 siemens igbt BSM 300 ga 120 siemens igbt BSM 200 GA 100 GA100D stt25
Contextual Info: bOE D fl23SbD5 OOMS^OM 4Tb • S I E G ■ SIEMENS SIEMENS AKTIENGESELLSCHAF BSM 200 GA 100 D IGBT Module Preliminary Data V CE = 1000 V J c = 2 7 5 A at r c = 25 C / c = 200 A at T c = 80 C • • • • • Power module Single switch Including fast free-wheel diodes

bsm150gd120dn2

Abstract: bsm200gd120dn2 ECONOPACK BSM20GD60DN2 BSM30GD60DN2 BSM25GD120DN2 BSM100GD120DN2 BSM50GD120DN2 BSM10GD120DN2 BSM10GD60DN2
Contextual Info: APPLICATIONS POWER SEMICONDUCTORS Mario Feldvoss ● Andreas Karl IGBT modules of the second generation: Econopacks shrink frequency converters Siemens has developed technically superior, but low-cost packages for second-generation IGBTs in the power range from

BSM25GD120D

Contextual Info: bGE » ûaaSbGS 0045032 47T « S I E G • SIEMENS SIEMENS AKTIENGESELLSCHAF - 9 7 BSM 25 GD 120 D IGBT Module Preliminary Data V CE = 1200 V / c = 6 x 35 A at Tc = 25 C I c = 6 x 25 A at Tc = 80 C • • • • • Power m odule 3-phase full bridge Including fast free-wheel diodes

BSM300GA120DN2E3166

Abstract: C67070-A2007-A70 D273 siemens igbt BSM300GA120DN2
Contextual Info: SIEMENS BSM300GA120DN2E3166 IGBT Power Module Preliminary data • Single switch • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate Type BSM300GA120DN2E3166 VCE 1200V 430A Package Ordering Code SINGLE SWITCH 1

Contextual Info: SIEMENS BSM150GB120DN2E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate BSM150GB120DN2E3166 h 1200V 210A 111 Type Package Ordering Code HALF-BRIDGE 2

Contextual Info: SIEMENS BSM300GA170DN2 E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • ^ G on.min = 5.6 Ohm 1c 1700V 440A UJ Type BSM300GA170DN2 E3166

Contextual Info: SIEMENS BSM150GB170DN2 E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • ^G on.min = 10 Ohm Type ‘'CE BSM150GB170DN2 E3166 1700V 220A h

BSM50GD60DN2E3226

Contextual Info: SIEMENS BSM50GD60DN2E3226 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate • E3226: long terminals, limited current per terminal Type VCE lc Package Ordering Code

VQE 13E

Contextual Info: SIEMENS BSM150GB170DN2 E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • ^G on.min = Ohm Type BSM150GB170DN2 E3166 h Vcz 1700V 220A Package

IGBT Power Module siemens ag

Abstract: BSM100GD120DN2 siemens igbt PCIM 24197 BSM75GD120DN2 siemens igbt chip Semiconductor Group igbt siemens igbt wiring
Contextual Info: Investigation of the static and dynamic current distribution in paralleled IGBT modules A. Mauder and W. Scholz Siemens AG, Semiconductor Group, Balanstr. 73, D-81541 Munich, Germany Tel.: +89/636-24197 Mauder , +89/636-28143 (Scholz); Fax: +89/636-22522

Contextual Info: SIEMENS IL485 OPTICALLY COUPLED HIGH SPEED MOSFET DRIVERS OPTOCOUPLER FEATURES • Fast Turn On • Fast Turn Off • Low Input Current • Isolation Test Voltage, 5300 VACRMS APPLICATIONS • Motor Drive Controls • IGBT-predrivers • AC/DC Power Inverters

BSM25GB120D

Abstract: C160 SC10 siemens igbt BSM 150 Gb 160 d SIEMENS ks
Contextual Info: LOE D • 0235bG5 QOMSÛ1L 2 2 ? « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF '7 ^ 3 3 - 0 7 BSM 25 GB 120 D BSM 25 G AL 120 D IGBT Module Preliminary Data VCE = 1200 V = 2 x 35 A at r c = 2 5 C = 2 x 2 5 A at r o = 8 0 'C Ic Ic • Power module • 3-phase full bridge