SIEMENS SFH 960 Search Results

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 409 Area not flat Chip position -Cathode SFH 409 Anode (SFH 487, SFH 4391) O in C\J (O o X 0) G EX06250 M aße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherwise specified. Wesentliche Merkmale

gaa 808

Contextual Info: SIEMENS SFH 48 5721 SFH 48 5400 SFH 48 5600 LASER BARS, UNMOUNTED FEATURES • Monolithic Linear Array, Unmounted • High Efficiency Quantum Well Structure • Highly Reliable Strained Layer Material: InGaAIAs/GaA* for X 808 nm InGaAa/GaAa for X=940 nm • Wavelength Range: 780 nm to 960 nm

sfh450

Contextual Info: SIEMENS Plastic Fiber O ptic T ransm itte r Diode Plastic C onnector Housing SFH 450 SFH 450V Features • • • • 2.2 mm aperture holds standard 1000 micron plastic fiber No fiber stripping required Good linearity Molded microlens for efficient coupling

tg 7f

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 242 2.7 00.45 Chip position co •>-; S i n 8_ Gl q -g ; O cvj « 14.5 12.5 3.6 ^3.0 Anode LD 242, BPX 63, SFH 464 Cathode (SFH 483) Approx. weight 0.5 g 8 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 2.7 00.45 LD 242 Chip position CO i - ; Q O 3.6 " 3.0 Anode LD 242, BPX 63, SFH 464 Cathode (SFH 483) Approx. weight 0.5 g IO C\J (O (O o 0) Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherwise specified.

SFH4057

Contextual Info: SFH 405 SIEMENS INFRARED EMITTER FEATURES Maximum Ratings * GaAs Infrared Emitting Diode, Fabricated in a Liquid Phase Epitaxy Process * Long Lifetime Operating and Storage Temperature Range Tqp, Tstq .-40° to +80°C Junction Temperature ( T j) .80°C

EM 4093

Contextual Info: bOE D ÔS35büS ÜQ4titi07 3 m ISIEG T^/-// SFH 409 SIEMENS INFRARED EMITTER SIEMENS AKTIENÛESELLSCHAF Package Dimensions in Inches mm Surface not flat - 204 (5 2) 177 (4 5) 024 (.6) .0 1 6 ( 4 ) 100 (2 54) .0 2 8 (7 ) 0 1 6 (4 ) f L a 1 2 2 (3 1) h w 114 (2 9 )

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH415 SFH 416 Cathode Approx. weight 0.2 g Area not flat Collector Transistor < o Approx. weight 0.4 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche Merkmale

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH415 SFH 416 Area not flat o Cathode Diode Collector (Transistor) CO (O (O o X 0) GEX06630 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche Merkmale

B35b

Contextual Info: SIEMENS CMPNTSi OPTO MME D Bi Û23b35b 000312^ 3 H S I E X SIEM ENS SFH 435 GaAs INFRARED EMITTER DOUBLE EMITTING DIODE T-41-11 Package Dimensions in Inches mm .024 (0.6) •Qf6j0.4) .252(6.4) .228 (5.8) I , .O K (2.15) ^ .0 6 5 ( 1 65) , .209 (7.35) .278 (7.05)“*^

Contextual Info: SIEMENS CMPNTS-, OPTO MME D Ö23b32b [1005120 7 * S I E X SIEM ENS SFH 401 SERIES GaAs INFRARED EMITTER T-41-U Package Dimensions in Inches mm .187(476) .181(4.6) 0.10 ( 2 .54) .216(55) ¿ I f (535) FEATURES Maximum Ratings • Package: 18 A 3 DIN 41 876 (TO 18),

Contextual Info: SFH 409 SIEMENS INFRARED EMITTER Package Dimensions in Inches mm 204 (5 2) 024 ( 6) 0 1 6 (4 ) 1S7 (4 0) 141 (3 6) 028 ( 7) 0 1 6 (4 ) *122(3 1) 100 (2 54) 114(2 9) 024(6)11 071 (1 6) 047(1 2) 0 1 6 (4 )^ ^ ^ 1 140(29) 1.061 (27) FEATURES M a x im u m R atings

L0832

Abstract: RUR1060
Contextual Info: SIEMENS SFH 405 INFRARED EMITTER P a c k a g e D im e n s io n s in In ch e s m m .112 J (2 .8 4 ) (2.24) .088 .045 (1.15) .035 (0.9) Parting line. _ Flash not included in tolerance .137 (3.5) .118(3.0) 142 (3.6) .126 (3 2) - i 106(2 7) 0 9 8 (2 5) 020 (0.5)

siemens SFH 960

Contextual Info: SIEM ENS GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 486 A rea not flat 5.9 5.5 JX6 •w i S I 0.4 Anode GEX06626 Approx. weight 0.5 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche Merkmale

1PMT

Contextual Info: Bauelemente für die LWL-Technik und Leistungslaser Semiconductor Devices for FiberOptic Systems and High-Power Lasers Bezeichnungsschema SFH Type designation X 48 Indicates power Laser X X X 1sl no.: Package 2na no.: Chip 3"1 no.: wavelength 0 Chip on carrier

TP20

Abstract: FH-41
Contextual Info: SFH415 SFH416 SIEMENS GaAs INFRARED EMITTER FEA TU R ES • Half Angle S F H 41 5: ±17° S FH 416: +28° • T 13/« Package • Highly Efficient GaAs LEDs • Good Linearity lE=f (lF at High Currents • Radiation in the Near Infrared Range • High Reliability

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 274 Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherwise specified. Wesentliche Merkmale Features • Sehr enger Abstrahlwinkel • GaAs-IR-LED, hergestellt im Schmelzepitaxieverfahren

7400

Contextual Info: Literaturhinweise Information on Literature Auszug aus unserem Literaturverzeichnis 12.93 Exerpt from our Literature Guide 12.93 Bestell-Nr.: B192-H6763-X-X-7400 Ordering No.: B192-H6763-X-X-7400 Titel Title Bestell-Nr. Ordering Code Art Ausgabe Class. Edition

ecg semiconductors master replacement guide

Abstract: ecg master replacement guide mkl b32110 siemens mkp B32650 c945 p 331 ks transistor IC,MASTER master replacement guide Kennlinie KTY 10-6 siemens b32110 A2005 transistor
Contextual Info: Liebe Schuricht-Kunden, Ihre Zufriedenheit ist unser größtes Anliegen. Aus diesem Grunde versuchen wir, Ihnen Informationen und Ware stets zum richtigen Zeitpunkt verfügbar zu machen. Das gilt insbesondere auch für die Produkte der Siemens AG mit den drei

AL970

Contextual Info: SIEMENS CMPNTS-, OPTO 44E D • SIEM EN S 023b32b 0005110 4 M S I E X LD 271/271H 1" LEADS LD 271L/271 LH INFRARED EMITTER Package Dimensions in Inches mm .024(0.6) .189(4.9) .165(42) ¿*(1.0) I a .to .0» •071 (U> ^ .047 ( U ) ^ _± .028 (0.7)' (1.0)

isl 6251 schematic

Abstract: smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs
Contextual Info: SIEMENS Halbleiter-Datenblätter Im Produktbereich „Halbleiter“ konnten uns leider von SIEMENS nicht alle Daten rechtzeitig zur Verfügung gestellt werden. Wir werden uns bemühen, die Auswahl an Datenblättern dieses Bereichs für die nächste Ausgabe dieser CD zu vervollständigen.

PEF 24628

Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by

JRC 45600

Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Contextual Info: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585