SILICON CARBIDE POWER MOSFET Search Results

mosfet 1200V

Abstract: cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET CMF20120D IXDI414 DMOS SiC JEDEC24 RB160M-60
Contextual Info: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FET MOSFET Rev. CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FET™ MOSFET N-Channel Enhancement Mode VDS = 1200 V

Solar Inverters

Contextual Info: 10-PZ12B2A040ME01-M330L63Y flow SOL0-SiC 1200 V / 40 mΩ Features TM ● Cree flow 0 12mm housing Silicon Carbide Power MOSFET TM ● Cree Silicon Carbide Power Schottky Diode ● Dual Boost Topology ● Ultra Low Inductance with Integrated DC-capacitors

CMF20120D

Abstract: JEDEC24 mosfet 1200V RB160M 6N137 IXDI414 RB160M-60 DMOS SiC electronic transformer halogen 12v MOSFET 800V 10A
Contextual Info: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FeTTM MOSFET Rev. A CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V RDS on = 80 mΩ N-Channel Enhancement Mode

Contextual Info: 10-PZ12NMA027ME-M340F63Y flow MNPC 0-SIC 1200V/ 80mΩ Features flow 0 12mm housing ● Cree Silicon Carbide Power MOSFET ● Cree™ Silicon Carbide Power Schottky Diode ● MNPC Topology with Splitted Output ● Ultra Low Inductance with Integrated DC-capacitors

Contextual Info: 10-PZ12NMA027MR-M340F68Y targat datasheet 1200V/ 30mΩ flowMNPC 0-SIC Features flow0 12mm housing ● Rohm Silicon Carbide Power MOSFET ● Rohm™ Silicon Carbide Power Schottky Diode ● MNPC Topology with Splitted Output ● Ultra Low Inductance with Integrated DC-capacitors

MSK4105

Contextual Info: MIL-PRF-38534 & 38535 CERTIFIED FACILITY HIGH TEMPERATURE 600V/10A HERMETIC HALF BRIDGE 4105 FEATURES: Operational From -55°C to 190°C Half Bridge Configuration Silicon Carbide Power MOSFETS Silicon Carbide Recovery Diodes 600V Rated Voltage 20A Continuous Output Current at Tc=25°C

SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A

Abstract: application notes frd silicon carbide RJS6004TDPN-E0 rju60c6 2202L RJU6052SDPD-E0 RJU60C3SDPD-E0
Contextual Info: Silicon Carbide and Silicon Fast-recovery Diodes High Performance and High Efficiency Renesas Electronics has a line-up of 10A to 30A, 600V, Silicon Carbide Power Diodes designed to meet Key Features and Target Applications the need for better energy efficiency in high-output

Contextual Info: STPSC1206 600 V power Schottky silicon carbide diode Features • No reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC boost diode Description K These diodes are manufactured using silicon carbide substrate. This wide bandgap material

STPSC1206D

Abstract: STPSC1206 16288
Contextual Info: STPSC1206 600 V power Schottky silicon carbide diode Features • No reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC boost diode Description A K These diodes are manufactured using silicon carbide substrate. This wide bandgap material

Contextual Info: SiC - JF ET Silicon Carbide- Junction Field Effect Transistor Cool Si C 1200 V CoolSiC™ Power Transistor IJW120R100T1 Final Da ta sheet Rev. 2.0, <2013-09-11> Po wer Ma nage m ent & M ulti m ark et 1200 V Silicon Carbide JFET IJW120R100T1 Description

IJW120R070T1

Abstract: IJW120R silicon carbide
Contextual Info: SiC - JF ET Silicon Carbide- Junction Field Effect Transistor Cool Si C 1200 V CoolSiC™ Power Transistor IJW120R070T1 Final Da ta sheet Rev. 2.0, <2013-09-11> Po wer Ma nage m ent & M ulti m ark et 1200 V Silicon Carbide JFET IJW120R070T1 Description

10KV SiC

Abstract: SiC IGBT High Power Modules SiC MOSFET 4600 mosfet 4600 dual mosfet Cree SiC MOSFET N00014-05-C-0202 Cree SiC diode die 100A Mosfet high voltage 10kv igbt
Contextual Info: Roadmap for Megawatt Class Power Switch Modules Utilizing Large Area Silicon Carbide MOSFETs and JBS Diodes Jim Richmond Scott Leslie Brett Hull Cree, Inc. 4600 Silicon Drive Durham, NC 27703, USA jim_richmond@cree.com Powerex, Inc. 200 E. Hillis St. Youngwood PA 15697, USA

power Diode 800V 20A

Abstract: SHD619502 MOSFET 20a 800v MOSFET 800V 10A
Contextual Info: SENSITRON _ SEMICONDUCTOR SHD619502 DATASHEET 5342, REV - 1200V, 35A Silicon Carbide Power MOSFET Surface mount hermetic package Low Rdson over full temperature range Low switching losses Maximum Ratings PARAMETER Continuous Drain Current SYMBOL Vgs = 20V, Tc=25 C

MOSFET 20a 800v

Abstract: MOSFET 800V 10A SHD626502 power Diode 800V 20A
Contextual Info: SENSITRON _ SEMICONDUCTOR SHD626502 DATASHEET 5343, REV - 1200V, 31A Silicon Carbide Power MOSFET Through-hole hermetic package Low Rdson over full temperature range Low switching losses Maximum Ratings PARAMETER Continuous Drain Current SYMBOL Vgs = 20V, Tc=25 C

Contextual Info: APT40SM120J APT40SM120J 1200V, 32A, 80mΩ Silicon Carbide Power MOSFET FEATURES TYPICAL APPLICATIONS • Fast switching with low EMI/RFI • PFC and other boost converter • Low RDS on • Buck converter SO • Short Circuit Withstand Rated • Flyback

Contextual Info: New Power Semiconductor Module Combines MNPC Topology with SiC Switches Kuno Straub, Product Marketing Manager, Vincotech GmbH This article compares and contrasts two types of modules, one with silicon switches and the other with SiC silicon carbide switches. Vincotech flowMNPC 0 modules in 12mm

Contextual Info: APT50SM120J APT50SM120J 1200V, 37A, 50mΩ Silicon Carbide Power MOSFET S S FEATURES TYPICAL APPLICATIONS • Fast switching with low EMI/RFI • PFC and other boost converter • Low Switching Energy • Buck converter • Low RDS on Temperature Coefficient For

microsemi

Contextual Info: APT50SM120B_S APT50SM120B APT50SM120S 1200V, 50A, 50mΩ Silicon Carbide Power MOSFET TO -24 FEATURES TYPICAL APPLICATIONS • Fast switching with low EMI/RFI • PFC and other boost converter • Low Switching Energy • Buck converter • Low RDS on Temperature Coefficient For

Silicon Carbide Power MOSFET

Abstract: microsemi
Contextual Info: APT40SM120B_S APT40SM120B APT40SM120S 1200V, 40A, 80mΩ Silicon Carbide Power MOSFET TO -24 FEATURES TYPICAL APPLICATIONS • Fast switching with low EMI/RFI • PFC and other boost converter • Low Switching Energy • Buck converter • Low RDS on Temperature Coefficient For

Contextual Info: SCT30N120 Silicon carbide Power MOSFET: 45 A, 1200 V, 80 mΩ, N-channel in HiP247 package Datasheet - preliminary data Features • Very tight variation of on-resistance vs. temperature • Slight variation of switching losses vs. temperature • Very high operating temperature capability

Contextual Info: Silicon Carbide Power MOSFET 1200 Volt 40 Amp Hermetic MYXMN1200-40CAB Product Overview Features y r a in Benefits • High speed switching with low capacitance • High voltage 1200V isolation in a small package outline • High blocking voltage with low RDS on

MYXMN1200-20CAB

Abstract: silicon carbide AT/1200 volt mosfet
Contextual Info: Silicon Carbide Power MOSFET 1200 Volt 20 Amp Hermetic MYXMN1200-20CAB Product Overview Features y r a in Benefits • High speed switching with low capacitance • High voltage 1200V isolation in a small package outline • High blocking voltage with low RDS on

SCT30n120

Contextual Info: SCT30N120 Silicon carbide Power MOSFET: 45 A, 1200 V, 80 mΩ, N-channel in HiP247 package Datasheet - preliminary data Features • Very tight variation of on-resistance vs. temperature • Slight variation of switching losses vs. temperature • Very high operating temperature capability

MYXMN0600-20DA0

Abstract: silicon carbide smd code diode 20a
Contextual Info: Silicon Carbide Power MOSFET 600 Volt 20 Amp SMD Hermetic MYXMN0600-20DA0 Product Overview Features y r a in Benefits • High speed switching with low capacitance • High voltage 600V isolation in a small package outline • High blocking voltage with low RDS on