SILICON POINT CONTACT MIXER DIODES Search Results

1N831

Abstract: 1N832A "Point Contact Diodes" Silicon Point Contact Mixer Diodes
Contextual Info: Point Contact Diodes Point Contact Diodes: 1N Series X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications through X-Band. These diodes employ epitaxial silicon optimized for low noise figure and

1N23 diode

Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA
Contextual Info: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure

1N21

Abstract: 1N1132 1N23 1N415 Microwave detector diodes 1n4603 1N416 "Point Contact Mixer" 1N3745 1n26
Contextual Info: Silicon Point Contact Mixer and Detector Diodes Quick Reference Chart Description This selection chart identifies the standard line of Alpha microwave point contact mixer and detector di­ odes by basic construction, package style and frequency band. Type

1N23 diode

Abstract: 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR
Contextual Info: EBAlpha Silicon Point Contact Mixer Diodes 1N2XX, 1N3205,1N25XX, 1N78X, DMA649X-XXX Series Features • High Burnout Resistance ■ Low Noise Figure, even in the Starved LO Mode ■ Hermetically Sealed Description Alpha’s point contact mixer diodes are designed for

1N23C diode

Abstract: DIODE ku 1490 1N25 diode 1N26A diode DO-37 DO-23 1N415C 1N4294 1N4603R 1N26BR
Contextual Info: SILICON POINT CON TACT MIXER DIODES ASI Point Contact M ixer Diodes are designed for applications from UHF through 26 GHz. The overall noise figure is expressed by the follow ing relationship: NF0 = Lc NR0 + NF if -1 NF„ = overall receiver noise figure

1N23C

Abstract: 1N23C diode 1N23 Diode Holder 1N23 diode CI 3060 Silicon Point Contact Mixer Diodes 1n23we 1N21E 1N23CR 1N1132
Contextual Info: 0585443 ALPHA IND/ SEMICONDUCTOR "El D lf| 0SÛS443 Q0DD3fiti E 03E 00386 D T -C>7 _¿> J Silicon Point Contact Mixer Diodes Features • High Burnout Resistance • Low Noise Figure, even in the Starved L.O. Mode • Hermetically Sealed The matching criteria for mixer diodes are as follows:

1N23 diode

Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan
Contextual Info: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re­ ceiver to deteriorate no greater than 0.1 dB due to local

Silicon Point Contact Mixer Diodes

Abstract: Mixer Silicon Detector
Contextual Info: Section 4 Receiving Diodes GaAs Schottky Barrier Mixer D io d e s . 4-2 GaAs Beamless Mixer Diodes .

gold metal detectors

Abstract: IN5711 in5711 equivalent diode ring mixer PN Junction Diode oscillator Metal Detector doppler radar p-n junction diode digital metal detector Silicon Point Contact Mixer Diodes
Contextual Info: Schottky Barrier Diodes Characteristics A Schottky barrier diode contains a metal-semiconductor barrier formed by deposition of a metal layer on a semiconductor. The resulting non-linear diode is similar to point contact diodes and p-n junction diodes. The

radar detector 10.5 ghz local oscillator

Abstract: Silicon Point Contact Mixer Diodes dmc5910
Contextual Info: Silicon Bonded and Pressure Contact Schottky Barrier Mixer Diodes Features Bonded Junctions for Reliability Low 1/f Noise Low Turn On for Starved L.O. Applications Planar Passivated Dice for Reliability Uniform Characteristics Description Applications Alpha’s silicon Schottky barrier mixer diodes are de­

HSMS0001

Abstract: Silicon Point Contact Mixer Diodes hsch 3486 zero bias schottky diode
Contextual Info: C haracteristics o f Schottky Barrier D iodes A Schottky barrier diode contains a metal-semiconductor barrier formed by deposition of a metal layer on a semiconduc­ tor. The resulting non-linear diode is similar to point contact diodes and p-n junction diodes.

Contextual Info: ALPHA I'ND/ SEMICONDUC TOR 33E D • 0S65H43 DDDD7S3 3 * A L P Silicon Bonded and Pressure Contact Schottky Barrier Mixer Diodes -v-o-7-0-1 Features ■ ■ ■ ■ ■ Bonded Junctions for Reliability Low 1/f Noise Low Turn On for Starved L.O. Applications

radar detector 10.5 ghz local oscillator

Abstract: DMC5501 DMF-6106 DMF4039 dmf6106 005801 DMF6130-013 Silicon Point Contact Mixer Diodes
Contextual Info: Silicon Bonded and Pressure Contact Schottky Barrier Mixer Diodes ALPHA IND/ S E M I C O N D U C T O R 0 5 A S M M 3 Q D D l l M b 3bfl • ALP 43E D * Features T í á,í' ■ ■ ■ ■ ■ 07-07 Bonded Junctions for Reliability Low 1/f Noise Low Turn On for Starved L.O. Applications

Contextual Info: GEC PL ES S E Y S } M I l> N I I 1 C 1 O K S DC1571/73 SILICON SCHOTTKY S-BAND MICROSTRIP LOW DRIVE MIXER DIODES DESCRIPTION APPLICATIONS The DC1570 series are medium barrier height silicon mixer diodes intended primarily for operation as low drive mixer

Contextual Info: P S tffli GEC PLES S EY DC1570/72 SILICON SCHOTTKY S-BAND WAVEGUIDE LOW DRIVE MIXER DIODES DESCRIPTION APPLICATIONS The DC1570 series are medium barrier height silicon mixer diodes Intended primarily for operation as low drive mixer diodes in systems where available local oscillator power is

Contextual Info: 37bflSS2 OGIÔHfiû MSI « P L S B Si GEC PLE SS EY SEMICONDUCTORS DC1575/78 SILICON SCHOTTKY X-BAND MICROSTRIP LOW DRIVE MIXER DIODES DESCRIPTION APPLICATIONS The DC1570 series are medium barrier height silicon mixer diodes intended primarily for operation as low drive mixer

Contextual Info: 37bñS22 ÜGläMäT 3TÖ « P L S B 3ü GEC P L E S S E Y S E M I C O N D U C T O R S DC1570/72 SILICON SCHOTTKY S-BAND WAVEGUIDE LOW DRIVE MIXER DIODES DESCRIPTION APPLICATIONS The DC1570 series are medium barrier height silicon mixer diodes intended primarily for operation as low drive mixer

CS100

Abstract: cs-100 1N415C 1N23 diode 1N23B 1N23 1N21E 1N416C cs-101 1N21C
Contextual Info: Point Contact Diodes: 1N Series S - X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed

Contextual Info: 37bñSES ODIAMMO GOT * P L S B Si GE C P L E S S E Y SEMICONDUCTORS DC1574/76/77 SILICON SCHOTTKY X-BAND WAVEGUIDE LOW DRIVE MIXER DIODES DESCRIPTION APPLICATIONS The DC1570 series are medium barrier height silicon mixer diodes intended primarily for operation as low drive mixer

Contextual Info: GE C P L E S S E Y S 1 M 1 i O N I U t: I O R s DC1575/78 SILICON SCHOTTKY X-BAND MICROSTRIP LOW DRIVE MIXER DIODES DESCRIPTION APPLICATIONS The DC1570 series are medium barrier height silicon mixer diodes intended primarily for operation as low drive mixer

1n415c

Abstract: 1N23G 1N21C 1N21D 1N21E 1N21F 1N21G 1N21WE 1N416G 1N416C
Contextual Info: Point Con tact Diodes: 1 N Series S - X Band Point Contact Mixer Diodes Description This MicroM etrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed

1N23 diode

Abstract: 1N23C 1N23B 1N21C 1N23A case cs101 1N415C diode 1N23WG 1N415H CS100
Contextual Info: Point Contact Diodes Point Contact Diodes: 1N Series S - X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed

Contextual Info: 37bñS2B OOlflMfl? SIS « P L S B 5Ë GECPLESSEY S E M I C O N D U C T O R S DC1571/73 SILICON SCHOTTKY S-BAND MICROSTRIP LOW DRIVE MIXER DIODES DESCRIPTION APPLICATIONS The DC1570 series are medium barrier height silicon mixer diodes intended primarily for operation as low drive mixer

JAN1N23WG

Abstract: 1N21* Diode Detector Holder JAN1N21WE 1N23C 1N23C diode 1N53C JAN1N21WG MA490E MA492C 1N831A
Contextual Info: N/A-COMSEMICONDtBRLNGTON 11 J> • Sb4E2mGGÜ13SÔT■MIC J Point Contact Mixer and Detector Diodes Features ■ PACKAGED CARTRIDGE POINT CONTACT MIXER DIODES ■ COAXIAL POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED