SILICON POWER TRANSISTORS 200V Search Results

2SD555

Abstract: 2SB600 NEC 2SB600 2SD666C 2SD666
Contextual Info: NEC SILICON POWER TRANSISTORS ELECTRON DEVICE 2SB600/2SD555 AUDIO FREQUENCY POWER AMPLIFIER PNP/NPN SILICON TRIPLE DIFFUSED TRANSISTORS D ESC R IPTIO N PACKAGE DIM EN SIO N S in millimeters inches The 2SB600/2SD555 are triple diffused high power transistors designed for use

mj power transistor speedup diode

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10020 MJ10021 D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS The MJ10020 and MJ10021 Darlington transistors are designed for high-voltage,

NPN pnp MATCHED PAIRS

Abstract: NTE2670 NTE2671 NPN MATCHED PAIRS
Contextual Info: NTE2670 NPN & NTE2671 (PNP) Silicon Complementary Transistors Silicon Perforated Emitter Technology Audio Power Output TO3PBL Type Package Description: The NTE2670 and NTE2671 are silicon complementary transistors in a TO3PBL type package that utilize Perforated Emitter technology specifically designed for high power audio output, disk head positioners and linear applications.

NTE388

Abstract: NPN 250W NTE68 NTE68MCP
Contextual Info: NTE388 NPN & NTE68 (PNP) Silicon Complementary Transistors General Purpose High Power Audio, Disk Head Positioner for Linear Applications Description: The NTE388 (NPN) and NTE68 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications.

BUY57

Abstract: BUY58 Q62702 U110
Contextual Info: BUY 57, BUY 58, BUY 73 NPN Triple-diffused silicon power transistors Preliminary data BUY 57, BUY 58 and BUY 73 are triple-diffused NF’ N silicon power transistors in a case sim. to 3 A 2 DIN 41872 TO-3 . The collector is electrically connected to the case. The transistors are particularly suitable for use as power switches for high

2N4298

Contextual Info: 2N4296 2N4298 2N4299 SILICON NPN POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4296, 2N4298, and 2N4299 devices are silicon NPN power transistors designed for power amplifier and switching applications. MARKING: FULL PART NUMBER

2n3773 power Amplifier circuit diagrams

Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
Contextual Info: RCA Power Devices This DATABOOK contains com­ plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete

Silicon Power Transistors 200v

Contextual Info: 2N6420 2N6421 2N6422 2N6423 SILICON PNP POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6420 series devices are silicon PNP power transistors designed for high speed switching and high voltage amplifier applications.

nte175

Abstract: NTE38
Contextual Info: NTE38 PNP & NTE175 (NPN) Silicon Complementary Transistors High Voltage, Medium Power Switch Description: The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high– speed switching and linear amplifier applications for high–voltage operational amplifiers, switching

Contextual Info: 2N6424 2N6425 SILICON PNP POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6424 and 2N6425 are silicon PNP power transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER

2N3439

Abstract: 2N3440
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN HIGH VOLTAGE SILICON TRANSISTORS 2N3439 2N3440 TO-39 High Voltage Silicon Planar Transistors used in High Voltage & High Power Amplifier Applications.

Contextual Info: 2H 3439,2N 34-10 HIGH VOLTAGE m SILICON TRANSISTORS TO-39 HIGH VOLTAGE SILICON PLANAR TRANSISTORS USED IN HIGH VOLTAGE * HIGH POWER AMPLIFIER APPLICATIONS, DESCRIPTION SYMBOL 2N 3439 2N 3440 UNITS 1 Collector-Emitter Voltage VCEC 350 250 V ft Collector-Base Voltage

BF459

Abstract: bf457 bf458
Contextual Info: DATA SHEET BF457 BF458 BF459 NPN SILICON HIGH VOLTAGE POWER TRANSISTORS JEDEC TO-126 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR BF457 series types are silicon NPN plastic transistors manufactured by the epitaxial planar process designed for horizontal driver, high voltage amplifier, and switching circuits.

2N3439

Abstract: 2N3440
Contextual Info: Transys Electronics L I M I T E D NPN HIGH VOLTAGE SILICON TRANSISTORS 2N3439 2N3440 TO-39 High Voltage Silicon Planar Transistors used in High Voltage & High Power Amplifier Applications. ABSOLUTE MAXIMUM RATINGS Ta=25 deg C unless otherwise specified DESCRIPTION

2n3439 cdil

Abstract: 2N3439 2N3440
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN HIGH VOLTAGE SILICON TRANSISTORS 2N3439 2N3440 TO-39 High Voltage Silicon Planar Transistors used in High Voltage & High Power Amplifier Applications. ABSOLUTE MAXIMUM RATINGS Ta=25 deg C unless otherwise specified

L-120L

Abstract: UMT1007 UMT1006 5A5A
Contextual Info: UMT1006 UMT1007 POWER TRANSISTORS 5A, 500V, Fast Switching, High Es/b Silicon NPN Mesa DESCRIPTION These high voltage glass passivated power transistors combine fast switching, low saturation voltage and rugged Es/b capability. They are designed for use in off-line power sup­

2SK19Y

Abstract: C682 2SK19GR X70a FSP400 40468 C621 K1202 C682A C684
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

Contextual Info: 2N6211 2N6212 2N6213 SILICON NPN POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6211, 2N6212, and 2N6213 are silicon NPN transistors designed for high speed switching and high voltage amplifier applications.

Contextual Info: 2N6211 2N6212 2N6213 SILICON NPN POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6211, 2N6212, and 2N6213 are silicon NPN transistors designed for high speed switching and high voltage amplifier applications.

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN HIGH VOLTAGE SILICON TRANSISTORS 2N3439 2N3440 TO-39 High Voltage Silicon Planar Transistors used in High Voltage & High Power Amplifier Applications. ABSOLUTE MAXIMUM RATINGS Ta=25 deg C unless otherwise specified

NTE2670

Abstract: NTE2671
Contextual Info: NTE2670 NPN & NTE2671 (PNP) Silicon Complementary Transistors Silicon Perforated Emitter Technology Audio Power Output Description: The NTE2670 and NTE2671 utilize Perforated Emitter technology specifically designed for high power audio output, disk head positioners and linear applications.

2sd1136

Contextual Info: SavantIC Semiconductor Product Specification 2SD1136 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High collector-base breakdown voltage : VCBO=200V min APPLICATIONS ·For power switching and TV vertical deflection output applications

laser range finder schematics

Abstract: schematic satellite finder thyristor cdi Notebook lcd inverter schematic PNP SILICON TRANSISTORS MIL GRADE JANTXV 2N5666 1n5819 trr MICROSEMI 2N2907A scr firing circuit for dc servo driver cdi dc/dc
Contextual Info: power conditioning More than solutions, enabling possibilities Discrete Semiconductors Powermite Products Power Schottkys/Rectifiers MOSFETs Bipolar Transistors Silicon Controlled Rectifiers Battery Bypass Circuits Switching Power and Conditioning Signals

MJ15023

Contextual Info: 1165922 Silicon power transistors. The MJ15023 powerBaseTM power transistors designed for high power audio, disk head positioners and other linear applications. Features: • • • TO-3 High safe operating area (100% tested) - 2A at 80V. High DC current gain = hFE = 15 (minimum) at IC = 8A dc.