SILICONIX 4800 Search Results

SILICONIX 4800 Result Highlights (5)

Part	Manufacturer	Description
TPN4800CQH	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 150 V, 18 A, 0.048 Ω@10 V, TSON Advance
LM74800MDRRR	Texas Instruments	3-V to 65-V back-to-back NFET ideal diode controller, -55°C to 125°C 12-WSON -55 to 125
LMK6CE04800DDLFR	Texas Instruments	Low-jitter, high-performance, bulk-acoustic-wave (BAW) fixed-frequency LVCMOS oscillator 4-VSON -40 to 105
BQ24800RUYR	Texas Instruments	SMBus 1-4 cell Buck battery charge controller to support hybrid power boost and battery boost mode 28-WQFN -40 to 85
BQ24800RUYT	Texas Instruments	SMBus 1-4 cell Buck battery charge controller to support hybrid power boost and battery boost mode 28-WQFN -40 to 85

SILICONIX 4800 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
PA 0016 PIONEER Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431 Contextual Info: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete	OCR Scan	J-23548 K28742 PA 0016 PIONEER Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431	PDF
74451 Abstract: SiE822DF-T1-E3 SiE822DF-T1-GE3 Contextual Info: SiE822DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling	Original	SiE822DF 2002/95/EC 11-Mar-11 74451 SiE822DF-T1-E3 SiE822DF-T1-GE3	PDF
74451 Abstract: SiE822DF-T1-E3 SiE822DF-T1-GE3 Contextual Info: SiE822DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling	Original	SiE822DF 2002/95/EC 18-Jul-08 74451 SiE822DF-T1-E3 SiE822DF-T1-GE3	PDF
Contextual Info: SPICE Device Model SiR832DP Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	SiR832DP 18-Jul-08	PDF
Contextual Info: SPICE Device Model SiR401DP www.vishay.com Vishay Siliconix Dual P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the	Original	SiR401DP 11-Mar-11	PDF
Contextual Info: SiE822DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling	Original	SiE822DF 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
7445-1 Contextual Info: SiE822DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling	Original	SiE822DF 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 7445-1	PDF
Si7625DN Abstract: mosfet 4430 si7625 S10-2503 Contextual Info: SPICE Device Model Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si7625DN S10-2503-Rev. 01-Nov-10 mosfet 4430 si7625 S10-2503	PDF
Contextual Info: SiE822DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling	Original	SiE822DF 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Si7858BDP Contextual Info: SPICE Device Model Si7858BDP Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si7858BDP 18-Jul-08	PDF
Contextual Info: SiE822DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling	Original	SiE822DF 2002/95/EC 11-Mar-11	PDF
si4497 Contextual Info: SPICE Device Model Si4497DY Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si4497DY 18-Jul-08 si4497	PDF
0745 Contextual Info: SPICE Device Model SiR834DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	SiR834DP 18-Jul-08 0745	PDF
Contextual Info: SPICE Device Model SiR401DP www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the	Original	SiR401DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF

74422 Contextual Info: New Product SiE830DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Extremely Low Qgd WFET Technology for Low Switching Losses RoHS • Ultra Low Thermal Resistance Using COMPLIANT ® Top-Exposed PolarPAK Package for Double-Sided Cooling	Original	SiE830DF 08-Apr-05 74422	PDF
Contextual Info: IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.190 Qg (Max.) (nC) 150 Qgs (nC) 44 Qgd (nC) 72 Configuration	Original	IRFP23N50L, SiHFP23N50L O-247 12-Mar-07	PDF
Contextual Info: SPICE Device Model SiS415DNT www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	SiS415DNT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
irfp23n50 Abstract: D25D Contextual Info: IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.190 Qg (Max.) (nC) 150 Qgs (nC) 44 Qgd (nC) 72 Configuration	Original	IRFP23N50L, SiHFP23N50L 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irfp23n50 D25D	PDF
74451 Abstract: SiE822DF-T1-E3 Contextual Info: New Product SiE822DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using RoHS Top-Exposed PolarPAK® Package for COMPLIANT Double-Sided Cooling • Leadframe-Based New Encapsulated Package	Original	SiE822DF 08-Apr-05 74451 SiE822DF-T1-E3	PDF
IRFP23N50L Abstract: SiHFP23N50L 91209 irfp23n50 Contextual Info: IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.190 Qg (Max.) (nC) 150 Qgs (nC) 44 Qgd (nC) 72 Configuration	Original	IRFP23N50L, SiHFP23N50L O-247 18-Jul-08 IRFP23N50L 91209 irfp23n50	PDF
Contextual Info: SPICE Device Model Si4491EDY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C	Original	Si4491EDY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: SPICE Device Model Si4483ADY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si4483ADY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.190 Qg (Max.) (nC) 150 Qgs (nC) 44 Qgd (nC) 72 Configuration	Original	IRFP23N50L, SiHFP23N50L 2002/95/EC O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
70190 Abstract: 74451 SiE822DF-T1-E3 Contextual Info: New Product SiE822DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using RoHS Top-Exposed PolarPAK® Package for COMPLIANT Double-Sided Cooling • Leadframe-Based New Encapsulated Package	Original	SiE822DF 18-Jul-08 70190 74451 SiE822DF-T1-E3	PDF

SILICONIX 4800 Search Results

SILICONIX 4800 Result Highlights (5)

SILICONIX 4800 Datasheets Context Search

PA 0016 PIONEER

74451

74451

7445-1

Si7625DN

Si7858BDP

si4497

0745

74422

irfp23n50

74451

IRFP23N50L

70190