SIMM 30 PIN PINOUT Search Results

Contextual Info: ADVANCE M IC R O N 16 MEG X MT8D168 8 DRAM M OD ULE 16 MEG x 8 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS MARKING • Timing 60ns access 70ns access 80ns access -6 -7 • Packages Leadless 3 0 -pin SIMM Leaded 30-pin SIP 30-Pin SIMM (T-6)

MT3D49

Contextual Info: PRELIMINARY M IC R O N 4 MEG 4 MEG DRAM MODULE X MT3D49 9 DRAM MODULE 9 DRAM X FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS MARKING • Timing 60ns access 70ns access -6 -7 • Packages Leadless 30-pin SIMM 30-Pin SIMM (DE-6) V cc CAS DQ1 AO A1

T2D19

Contextual Info: M IC R O N MT2D18 1 MEG X 8 DRAM MODULE I 1 MEG X 8 DRAM DRAM MODULE FAST PAGE MODE FEATURES OPTIONS MARKING Timing 60ns access 70ns access 80ns access -6 -7 -8 Packages Leadless 30-pin SIMM M Part Number Example: MT2D18M-6 PIN ASSIGNMENT Top View 30-Pin SIMM

Contextual Info: ADVANCE MT2D48 4 MEG X 8 DRAM MODULE MICRON I TECHNOLOGY. INC DRAM 4 MEG M O D U LE IV IU U U U L 4 MEGABYTE, 5V, FAST PAGE MODE X 8 FEATURES OPTIONS MARKING • Timing 60ns access 70ns access -6 -7 • Packages 30-pin SIMM M PIN ASSIGNMENT Front View 30-Pin SIMM

30-pin simm memory

Contextual Info: [M IC R O N MT8C8026 1MEG x 8 DRAM DRAM MODULE STATIC COLUMN PIN ASSIGNMENT Top View OPTIONS MARKING • Timing 80ns access 100ns access 120ns access • Packages: Leaded 30 -pin SIP Leadless 30-pin SIMM -10 -12 MN M GENERAL DESCRIPTION The MT8C8026 is a randomly accessed solid-state

MT8C

Contextual Info: M IC R O N MT8C9026 1MEG x 9 DRAM DRAM MODULE STATIC COLUMN PIN ASSIGNMENT (Top View OPTIONS MARKING • Timing 80ns access 100ns access 120ns access • Packages: Leaded 30 -pin SIP Leadless 30-pin SIMM -10 -12 MN M GENERAL DESCRIPTION The MT8C9026 is a randomly accessed solid-state

Contextual Info: M IC R O N DRAM 256K X 8 MT2D2568 DRAM MODULE 256K x 8 DRAM FAST PAGE MODE (MT2D2568 _ MODULE IV IW L /lS k b . LOW POWER, EXTENDED REFRESH (MT2D2568 L) FEATURES PIN ASSIGNMENT (Top View) OPTIONS • Packages Leadless 30-pin SIMM Leaded 30-pin SIP • Power/Refresh

Contextual Info: |U |C = R O N 4 MEG DRAM MODULE X 8 MT8D48 DRAM MODULE 4 MEG X 8 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS MARKING • Timing 60ns access 70ns access 80ns access -6 -7 • Packages Leadless 30 -pin SIM M 30-Pin SIMM (DE-3) Vcc CAS D01

Contextual Info: M IC R O N MT8C8025 DRAM MODULE 1MEG x 8 DRAM NIBBLE MODE FEATURES MARKING • Timing 80ns access 100ns access 120ns access • Packages: Leaded 30-pin SIP Leadless 30-pin SIMM -10 -12 MN M GENERAL DESCRIPTION The MT8C8025 is a randomly accessed solid-state

Contextual Info: |U |IC =R O N 4 MEG 4 MEG DRAM MODULE X MT9D49 9 DRAM MODULE X 9 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS MARKING • Timing 60ns access 70ns access 80ns access -6 -7 Packages Leadless 30 -pin SIM M 30-Pin SIMM (DE-4) Vcc CAS DQ1 DQ 2

30-pin simm memory "16m x 8"

Contextual Info: STI916100 30-PIN SIMMS 1 6 MX 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI916100 is a 16M bit x 9 Dynamic RAM high density memory module. The Simple Technology STI916100 consist of nine CMOS 16M x 1 DRAMs in 24-pin SOJ package mounted on a 30-pin glass epoxy substrate. A

256k 30-pin SIMM

Abstract: 30-pin simm memory MT8259 30-pin SIMM
Contextual Info: |U|IC=RON MT8259 256K X 8 DRAM DRAM MODULE PIN ASSIGNMENT Top View OPTIONS Vcc CÄ5 DQ1 AO A1 DQ2 A2 A3 Vss DQ3 A4 A5 DQ4 A6 A7 DQ5 A8 NC NC DQ6 MARKING • Timing 80ns access 100ns access 120ns access 150ns access • Packages: Leadless 30-pin SIMM Leaded 30-pin SIP

30-pin simm memory "16m x 8"

Abstract: 30-pin simm memory 30-pin SIMM RAM
Contextual Info: 30-PIN SIMMS STI816100 16M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI816100 is a 16M bit x 8 Dynamic RAM high density memory module. The Simple Technology STI816100 consist of eight CMOS 16M x 1 DRAMs in 24-pin SOJ package mounted on a 30-pin glass epoxy substrate. A

Contextual Info: STI84000A 30-PIN SIMMS 4M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI84000A is a 4M bii: x 8 Dynamic RAM high density memory module. The Simple Technology STI84000A consist of two CMOS 4M x 4 DRAMs in 24-pin SOJ package mounted on a 30-pin glass epoxy substrate. A 0.1 ^F

T3D49

Abstract: FPM DRAM 30-pin SIMM MT4C1004
Contextual Info: ADVANCE |u iic : r o n 4 MEG X MT3D49 9 DRAM MODULE 4 MEG x 9 DRAM MODULE 4 MEGABYTE, 5V, FAST PAGE MODE FEATURES PIN ASSIGNMENT Front View • JEDEC- and industry-standard pinout in a 30-pin, single-in-line m emory module (SIMM) • High-perform ance CM OS silicon-gate process

30-pin SIMM RAM

Contextual Info: STI94000 30-PIN SIMMS 4M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI94000 is a 4M bit x 9 Dynamic RAM high density memory module. The Simple Technology STI94000 consist of nine CMOS 4 M x 1 DRAMs in 20-pin SOJ package

KMM591000C8

Abstract: KMM591000C KMM591000C7 KMM591000C-7
Contextual Info: KMM591000C DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM591000C is a 1M b itx 9 Dynamic RAM high density memory module. The Samsung KMM591000C consist of nine KM41C1000C DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy

Contextual Info: KMM594000A DRAM MODULES 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594000A is a 4M bit X 9 Dynamic RAM high density memory module. The Samsung KMM594000A consist of nine KM41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy

Samsung Capacitor sms

Abstract: km41c4000aj KM41C4000A
Contextual Info: D3AM MODULES KMM59400QA 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594000A is a 4M bit X 9 Dynamic RAM high density memory module. The Samsung KMM594000A consist of nine KM41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy

KMM584000A

Abstract: km41c4000aj
Contextual Info: KMM584000A DRAM MODULES 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung KMM584000A consist of eight KM41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy

Contextual Info: KMM581000C DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000C is a 1M b it x 8 Dynamic RAM high density memory module. The Samsung KMM581000C consist of eight KM41C1000C DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy

30-pin simm memory

Abstract: 30-pin SIMM RAM TTL 30pin
Contextual Info: STI84000 30-PIN SIMMS 4M X 8 DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: Wc ^CAC ^RC STI84000-60 60ns 15ns 110ns STI84000-70 70ns 20ns 130ns STI84000-80 80ns 20ns 150ns Fast Page Mode operation CAS-before-RAS refresh capability

Contextual Info: DRAM MODULES KMM584000A 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KM M 584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 584000A consist of eight KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy

SS1000

Abstract: KMM581000B
Contextual Info: KMM581000B DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000B is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KMM581OOOB consist of eight KM41C1OOOBJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy