SMD DIODE UM 07 Search Results

smd diode UM 07

Abstract: diode IR switch SILICON SWITCHING DIODE BAR65-07 smd rf transistor marking pindiode switch smd diode UM 09 smd diode UM 08
Contextual Info: Diodes SMD Type Silicon RF Switching Diode BAR65-07 Unit: mm Features Low loss, low capacitance PIN-Diode Band switch for TV-tuners Series diode for mobile communications transmit-receive switch Unconnected pair Absolute M axim um R atings T a = 25 P aram eter

smd JS

Abstract: smd transistor js smd diode marking ja smd diode JS diode DIODE 630 DIODE JS diode marking ja DIODE SMD 55 ja smd
Contextual Info: Diodes SMD Type Silicon Schottky Diode BAT62-07W SOT-343 Unit: mm Features Low barrier diode for detectors up to GHz frequencies. Absolute Maxim um Ratings Ta = 25 Symbol Value Unit Diode reverse voltage Parameter VR 40 V Forward current IF 20 mA P tot 100

smd diode marking 47s

Abstract: transistor marking 47s smd diode marking 1P smd marking 47s diode K 345 Schottky Diode smd rf transistor marking BAS40-07W diode 345
Contextual Info: Diodes SMD Type Silicon Schottky Diode BAS40-07W SOT-343 Unit: mm Features General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing A bsolute M axim um R atings T a = 25 P aram eter D iode reverse voltage

TRANSISTOR SMD MARKING CODE 1K

Abstract: DIODE smd marking code UM 41 2/DIODE smd marking code UM 41
Contextual Info: CENTRAL SEMICONDUCTOR SDE D • n ù T ìL B DODOSlb T i f i ■ CEN SMD Zener Diode SO D -80 Case 500m W U.S. Specification Preferred Series The Central Semiconductor CLL5221B Series Silicon Zener Diode is a high quality voltage regulator for use in industrial, commercial,

smd diode UJ 64 A

Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
Contextual Info: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 office@roithner-laser.com, www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.

Contextual Info: OPTEK P roduct B ulletin OPR2100 A u g u st 1996 Six Element SMD Photodiode Array Type OPR2100 - .031 0.8 —^ ( - .130(3.3) r | - .237(6.0) .071(1.8) .213(5.4) .362 x .236 GROUND PLANE* (9.2 x 6.0) r - DIA .0315(0.80) r W ~ I ON SUBSTRATE .354(9.0) .409(10.4)

TRANSISTOR SMD MARKING CODE w6

Abstract: SMD TRANSISTOR MARKING 5H
Contextual Info: CENTRAL SEPIICONDUCTOR naoasm 5 DE D 01 5 • SMD Zener Diode SOT-23 Case 350mW cen T - W - o ° \ U.S. Specification Preferred Series The Central Semiconductor CMPZ5221B Series Silicon Zener Diode is a high quality voltage regulator for use in industrial,

diode smd ED 17

Abstract: smd diode ED diode smd ed 02 ersa rds 80 ST SMD SCR diode smd ed 25 smd diode ED 47
Contextual Info: PRODUCT DATASHEET AAT2610 7-Channel PMU for Digital Still Cameras Ge n e r a l D e scr ipt ion Fe a t u r e s The AAT2610 is a highly int egrat ed power m anagem ent solut ion specifically suit ed for Digit al St ill Cam era DSC syst em s, feat uring seven DC- DC swit ching regulat ors for

Contextual Info: PRODUCT DATASHEET AAT1403 SwitchRegTM Serial LED Driver with Filtered PWM and 32 Step S2C Dimming Control Ge n e r a l D e scr ipt ion Fe a t u r e s The AAT1403 is a st ep- up single channel LED driver wit h an input volt age range of 2.7V t o 5.5V. The wide input

Contextual Info: PRODUCT DATASHEET AAT1410 SwitchRegTM Serial LED Driver with Direct PWM and 32 Step S2C Dimming Control Ge n e r a l D e scr ipt ion Fe a t u r e s The AAT1410 is a st ep- up single channel LED driver wit h an input volt age range of 2.7V t o 5.5V. The wide input

diode smd ED 35

Contextual Info: PRODUCT DATASHEET AAT1401 SwitchRegTM Serial LED Driver with Filtered PWM and 32 Step S2C Dimming Control Ge n e r a l D e scr ipt ion Fe a t u r e s The AAT1401 is a st ep- up single channel LED driver wit h an input volt age range of 2.7V t o 5.5V. The wide input

D 819

Contextual Info: □1XYS Preliminary Data Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack V CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Symbol Test C onditions V CES Tj = 25°C to 150°C 1000 V

Contextual Info: IXGH 12N100U1 IXGH 12N100AU1 Low VCE sat IGBT with Diode High Speed IGBT with Diode VCES ^C25 V ¥ CE(sat) 1000 V 1000 V 24 A 24 A 3.5 V 4.0 V TO-247 SMD* E Symbol Test Conditions v CES VcOR Td = 25°C to 150°C T j = 25°C to 150°C; RGE = 1 M H VGES v SBB

smd DIODE 3FS

Abstract: IXGH40N30BD 40N30
Contextual Info: □ IXYS HiPerFAST IGBT IXGH40N30BD1 IXGH40N30BD1S V CES ^C25 V C E sat 300 V 60 A 2.4 V 75 ns Preliminary data Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 300 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 300 V V GES Continuous ±20

Contextual Info: D 1 X Y S Preliminary data HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S Combi Pack v CES ^C25 vv CE sat tfi = 600 V = 75 A = 2.7 V = 275 ns TO-247 Hole-less SMD (50N 60AU 1S) Symbol Test Conditions Maximum Ratings v CES T j = 25°C to 150°C 600

ixys ml 075

Abstract: 50N60A
Contextual Info: OIXYS HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S = 600 V = 75 A = 2.7 V = 275 ns 'C E S IC 25 VCE sat fi Preliminary data S ym bol Test C onditions V* CES T j = 2 5 « C to 1 5 0 ° C 600 V V CGR T j = 25°C to 150°C; RGE = 1 M£2 600 V v GES

SZX05A0A

Abstract: A05 zener SHARP I A05
Contextual Info: Z-Power LED X10490 Technical Data Sheet Pb Free Specification SSC-SZX05A0A Rev.02_100816 SSC Drawn Approval Customer Approval Rev. 02 1 August 2010 www.seoulsemicon.com 서식번호 : SSC-QP-7-07-25 (Rev.00) Z-Power LED X10490 Technical Data Sheet [ Contents ]

BC 247 B

Abstract: IXGH32N60 IXGH32N60CD1 DIODE SMD GEM
Contextual Info: □ IXYS ADVANCED TECHNICAL INFORMATION IXGH32N60CD1 IXGH32N60CD1S HiPerFAST IGBT with Diode ^fi typ Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V V GEM Transient ±30 V ^C25

931 diode smd

Abstract: g20n60
Contextual Info: □ IXYS V CES IXGH 24N60AU1 IXGH 24N60AU1S ^C25 V CE sat t fi HiPerFAST IGBT with Diode Combi Pack Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C 600 V V* CGR Tj = 25°C to 150°C; RGE = 1 MÎ2 600 V vWGES Continuous ±20 V V* GEM Transient

32N50

Abstract: 30n50
Contextual Info: H iPerFET Power M O SFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFH 30N50 IXFH 32N50 p V DSS ^D25 500 V 30 A 0.16 f i 500 V 32 A trr £ 250 ns 0.15 Û DS on Preliminary data Sym bol Test C onditions V DSS Tj = 2 5 °C to 1 5 0 °C

070N06L

Abstract: PG-TO-220-3 PG-TO220-3 g2ns 070N0 D53A
Contextual Info: IPB070N06L G IPP070N06L G OptiMOS Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification R DS on ,max • N-channel enhancement - logic level SMD version ID 60 V 6.7 m: 80 A • 175 °C operating temperature

igbt to247

Abstract: s9011 IXGH24N60AU1S ixgh24N60
Contextual Info: HiPerFAST IGBT with Diode IXGH24N60AU1 IXGH24N60AU1S v CES ^C25 v CE sat t- Symbol Test Conditions v CES v CGR T j = 2 5 °C to 1 5 0 °C 600 V Tj = 25°C to 150°C; RQE = 1 M il 600 V Maximum Ratings v GES Continuous ±20 V v GEM T ransient ±30 V ^C25

smd diode 819

Abstract: 30n60
Contextual Info: VCES IXGH30N60BU1 IXGH30N60BU1S ^C25 HiPerFAST IGBT with Diode = — VCE sat = tfi 600 V 60 A 1.8 V 130 ns TO-247 SMD (30N60BU1S) Symbol Test Conditions V CEs Td Maximum Ratings i c (TAB) 25°C to 150°C 600 V V V c G„ Tj = 25°C to 150°C; RGE = 1 MO

32N60BU1

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60BU1 IXGH 32N60BU1S v CES ^C25 v CE sat »fl Maximum Ratings Symbol Test Conditions VCEs T j = 25°C to 150°C 600 V VcOR Tj = 25°C to 150°C; ROE = 1 M£2 600 V VGES Continuous ±20 V v GEM T ransient ±30 V ^C25 Tc =25°C