SMD DIODE UM 09 Search Results

smd JS

Abstract: smd marking S9 BAT14-099 smd JS 5 marking s9 DIODE JS smd transistor js BAT14 bat14-099 data sheet smd rf transistor marking
Contextual Info: Diodes SMD Type Silicon Dual Schottky Diode BAT14-099 Unit: mm Features DBS mixer application to 12 GHz Low noise figure Medium barrier type Absolute M axim um Ratings Ta = 25 Param eter Sym bol Value Unit Reverse voltage VR 4 V Forward current IF 90 mA 55

smd diode marking Av

Abstract: diode BAT62 SOT-363 marking 05 smd marking AV SOT363 bat62 BAT62-09S smd transistor marking 09S BAT62-08S smd diode UM smd marking AL
Contextual Info: Diodes SMD Type Silicon Schottky Diode BAT62-08S;BAT62-09S SOT-363 Unit: mm 0.525 +0.1 1.3-0.1 0.65 +0.15 2.3-0.15 +0.1 1.25-0.1 Features 0.36 Low barrier diode for detectors up to GHz frequencies 0.1max +0.05 0.1-0.02 +0.05 0.95-0.05 +0.1 0.3-0.1 +0.1 2.1-0.1

Contextual Info: Diodes SMD Type Product specification BAT14-099 Unit: mm Features DBS mixer application to 12 GHz Low noise figure Medium barrier type Absolute M axim um Ratings Ta = 25 Param eter Sym bol Value Unit Reverse voltage VR 4 V Forward current IF 90 mA 55 P tot

TRANSISTOR SMD MARKING CODE 1K

Abstract: DIODE smd marking code UM 41 2/DIODE smd marking code UM 41
Contextual Info: CENTRAL SEMICONDUCTOR SDE D • n ù T ìL B DODOSlb T i f i ■ CEN SMD Zener Diode SO D -80 Case 500m W U.S. Specification Preferred Series The Central Semiconductor CLL5221B Series Silicon Zener Diode is a high quality voltage regulator for use in industrial, commercial,

TRANSISTOR SMD MARKING CODE w6

Abstract: SMD TRANSISTOR MARKING 5H
Contextual Info: CENTRAL SEPIICONDUCTOR naoasm 5 DE D 01 5 • SMD Zener Diode SOT-23 Case 350mW cen T - W - o ° \ U.S. Specification Preferred Series The Central Semiconductor CMPZ5221B Series Silicon Zener Diode is a high quality voltage regulator for use in industrial,

ad 0845

Abstract: 45c smd diode smd diode MS 22 SMD Diode KE
Contextual Info: aixYS DSP25 VRRM IFRMS Phase-leg Rectifier Diode 1200/1600 V 2x43 A 2x28 A FAVM r— V n sM V V RRM TO-247 SMD 1200 1600 Type DSP 25-12A DSP 25-16A ~l 4-4 -4 ! r V 1300 1700 TO -247 AD r - w H 1 DSP 25-12AS DSP 25-16AS 2 - i TO-247 SMD TO-247 AD I 3 TAB

D 819

Contextual Info: □1XYS Preliminary Data Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack V CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Symbol Test C onditions V CES Tj = 25°C to 150°C 1000 V

Contextual Info: IXGH 12N100U1 IXGH 12N100AU1 Low VCE sat IGBT with Diode High Speed IGBT with Diode VCES ^C25 V ¥ CE(sat) 1000 V 1000 V 24 A 24 A 3.5 V 4.0 V TO-247 SMD* E Symbol Test Conditions v CES VcOR Td = 25°C to 150°C T j = 25°C to 150°C; RGE = 1 M H VGES v SBB

smd DIODE 3FS

Abstract: IXGH40N30BD 40N30
Contextual Info: □ IXYS HiPerFAST IGBT IXGH40N30BD1 IXGH40N30BD1S V CES ^C25 V C E sat 300 V 60 A 2.4 V 75 ns Preliminary data Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 300 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 300 V V GES Continuous ±20

smd diode JC 0p

Abstract: DIODE SMD GEM IXGH24N60AU1S
Contextual Info: Hi Per FAST IGBT with Diode IXGH 24N60AU1 IXGH24N60AU1S CES ^C25 v CE sat Combi Pack tfi = = = = 600 V 48 A 2.7 V 275 ns Preliminary data Symbol Test Conditions Maximum Ratings v CES ^ = 25°C to 150°C 600 V v*CGR ^ = 25°C to 150°C; RGE = 1 Mi2 600

smd TRANSISTOR code AJ

Contextual Info: Whp% H E W LE TT mL'tim PACKARD D ual C hannel L ine R eceiver H erm etic O ptocoupler Technical Data HCPL-1930 HCPL-1931 883B 5962-8957201EC Outline Draw ing DATE CODE - j ( -, SUFFIX LETTER! I i— i— i •*£ Y W X U.S.A. f i i— i CERTIFICATION MARK

5962-8978501PC

Abstract: SMD 5730
Contextual Info: W H pì HEW LETT mL'ttM PACKARD Low Input Current, High Gain, Hermetically Sealed Optocoupler 8-pin Dual In-Line Package HCPL-5700 HCPL-5701 883B 5962-8981001PC HCPL-5730 HCPL-5731 (883B) 5962-8978501PC 20 Terminal Leadless Chip Carrier HCPL-6730 HCPL-6731 (883B)

Contextual Info: D 1 X Y S Preliminary data HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S Combi Pack v CES ^C25 vv CE sat tfi = 600 V = 75 A = 2.7 V = 275 ns TO-247 Hole-less SMD (50N 60AU 1S) Symbol Test Conditions Maximum Ratings v CES T j = 25°C to 150°C 600

ixys ml 075

Abstract: 50N60A
Contextual Info: OIXYS HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S = 600 V = 75 A = 2.7 V = 275 ns 'C E S IC 25 VCE sat fi Preliminary data S ym bol Test C onditions V* CES T j = 2 5 « C to 1 5 0 ° C 600 V V CGR T j = 25°C to 150°C; RGE = 1 M£2 600 V v GES

mk06u

Abstract: dil reedrelais KEMA 03 ATEX 2042U relais bistabil smd M21 RM05-4-BV10500 mk08 OPTOKOPPLER PTB 06 ATEX 2042U smd 1C
Contextual Info: PRODUKTÜBERSICHT Reed Relais • Reed Sensoren · Reed Schalter www.meder.com AUSWAHLHILFE MEDER electronic Auswahlhilfe Im folgenden Abschnitt stellen wir unsere Standard-Reedprodukte und ihre Spezifikationen in Übersichtsform dar. Diese Produkte repräsentieren nur einen kleinen Teil des

VM04

Abstract: smd zener diode code M9
Contextual Info: W hnl HEWLETT %Lt JÊ PACKARD AC/DC to Logic Interface Hermetically Sealed Optocouplers Technical Data HCPL-5760 HCPL-5761 883B 5962 8947701PX Features • D ual Marked w ith DESC Standard M ilitary D raw ing • M anufactured and T ested on a MIL-STD-1772

BC 247 B

Abstract: IXGH32N60 IXGH32N60CD1 DIODE SMD GEM
Contextual Info: □ IXYS ADVANCED TECHNICAL INFORMATION IXGH32N60CD1 IXGH32N60CD1S HiPerFAST IGBT with Diode ^fi typ Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V V GEM Transient ±30 V ^C25

931 diode smd

Abstract: g20n60
Contextual Info: □ IXYS V CES IXGH 24N60AU1 IXGH 24N60AU1S ^C25 V CE sat t fi HiPerFAST IGBT with Diode Combi Pack Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C 600 V V* CGR Tj = 25°C to 150°C; RGE = 1 MÎ2 600 V vWGES Continuous ±20 V V* GEM Transient

32N50

Abstract: 30n50
Contextual Info: H iPerFET Power M O SFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFH 30N50 IXFH 32N50 p V DSS ^D25 500 V 30 A 0.16 f i 500 V 32 A trr £ 250 ns 0.15 Û DS on Preliminary data Sym bol Test C onditions V DSS Tj = 2 5 °C to 1 5 0 °C

igbt to247

Abstract: s9011 IXGH24N60AU1S ixgh24N60
Contextual Info: HiPerFAST IGBT with Diode IXGH24N60AU1 IXGH24N60AU1S v CES ^C25 v CE sat t- Symbol Test Conditions v CES v CGR T j = 2 5 °C to 1 5 0 °C 600 V Tj = 25°C to 150°C; RQE = 1 M il 600 V Maximum Ratings v GES Continuous ±20 V v GEM T ransient ±30 V ^C25

ACTQ14

Abstract: 54ACTQ14 E20A J14A
Contextual Info: & Semiconductor 54ACTQ14 Quiet Series Hex Inverter with Schmitt Trigger Input General Description term ined internally by transistor ratios and is essentially in­ sensitive to tem perature and supply vo ltage variations. The ’A C TQ 14 contains six inverter gates each w ith a Schm itt

smd diode 819

Abstract: 30n60
Contextual Info: VCES IXGH30N60BU1 IXGH30N60BU1S ^C25 HiPerFAST IGBT with Diode = — VCE sat = tfi 600 V 60 A 1.8 V 130 ns TO-247 SMD (30N60BU1S) Symbol Test Conditions V CEs Td Maximum Ratings i c (TAB) 25°C to 150°C 600 V V V c G„ Tj = 25°C to 150°C; RGE = 1 MO

32N60BU1

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60BU1 IXGH 32N60BU1S v CES ^C25 v CE sat »fl Maximum Ratings Symbol Test Conditions VCEs T j = 25°C to 150°C 600 V VcOR Tj = 25°C to 150°C; ROE = 1 M£2 600 V VGES Continuous ±20 V v GEM T ransient ±30 V ^C25 Tc =25°C

Contextual Info: HiPerFAST IGBT with Diode VCES I IXGH22N50BU1 ix g h 22N50BU i s = 500 V = 44 A Preliminary data Symbol Test Conditions Maximum Ratings V VCGfl T, = 25°C to 150°C T , = 25°C to 150°C; RGE = 1 Mi2 500 500 V V VGES VGEM Continuous T ransient ±20 ±30