SMD IC PACKAGE Search Results

Contextual Info: SMD High Speed Saturated Switching Transistors toff @ IC Part No. MMBT3640 20070515 Polarity PNP VCEO ton Min. Max. Max. IC V (ns) (ns) (mA) 12 25 35 50 hFE @ IC Min. 30 SMD Bipolar Transistors VCE(sat) @ IC & IB IC Max IC (mA) (V) (mA) 10 0.2 10 IB fT Min.

KTHC5513

Contextual Info: IC IC SMD Type Power MOSFET KTHC5513 Features Complementary N-Channel and P-Channel MOSFET Leadless SMD Package Featuring Complementary Pair Low RDS on in a ChipFET Package for High Efficiency Performance Low Profile ( 1.10 mm) Allows Placement in Extremely Thin

P Channel Low Gate Charge

Abstract: KTHD3100C
Contextual Info: IC IC SMD Type Power MOSFET KTHD3100C Features Complementary N-Channel and P-Channel MOSFET Leadless SMD Package Provides Great Thermal Characteristics Trench P-Channel for Low On Resistance Low Gate Charge N-Channel for Test Switching Absolute Maximum Ratings Ta = 25

Contextual Info: SMD Power Transistors Part No. Polarity IC VCEO PC A (V) (W) hFE @ VCE & IC Min. VCE IC (V) VCE(sat) @ IC & IB IC IB (A) Max. (V) (A) (A) fT @ VCE & IC Typ. VCE (MHz) (V) Pins Package (A) 123 Reel IC MJD44H11 NPN 8.0 80 20 60 1 2.00 1.00 8.0 0.4 50 10.0

smd diode 1301

Abstract: 1301 smd DIODE SMD 10A smd diode 1303 1202 smd diode smd symbols diode 1304 DIODE SMD 1303 smd diode 1304 DIODE SMD 55
Contextual Info: SEMTECH CORP S1E D ÛIBTIBT 00GSS3Ô 1 7^-<2 3 -O 7 SEMTECH CORPORATION MICROELECTRONICS DIVISION SMD SMD SMD SMD CENTER-TAP, RECTIFIER IN HERMETIC ISOLATED TO 220 PACKAGE Q U IC K REFERENCE DATA Designed for use in switching power supplies, inverters and as free-wheeling diodes.

smd T4C

Abstract: mt4c1004
Contextual Info: DRAM 4 MEG X 1 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-90622 • MIL-STD-883 18-Pin DIP FEATURES OPTIONS Packages C eram ic DIP (300 m il) C eram ic DIP (400 mil) C eram ic LCC C eram ic SOJ C eram ic ZIP

Infrared led 850 smd

Abstract: SMD WH Infrared led 940 smd BL-LS1311IR 850 nm Infrared Emitting Diode smd GaAs 850 nm Infrared Emitting Diode high power infrared led Infrared Emitting Diode infrared led sr smd diode
Contextual Info: SMD INFRARED EMITTING DIODES BL-LS1311IR Features: 3.5mmx2.8mm SMD, 1.9mm THICKNESS PLCC2 package, Infrared LED High Reliability Peak Wavelength at 940, 880, 850nm Water Clear, yellow Transparent, Blue Transparent available IC compatible /Low current capability.

Contextual Info: Transistors IC SMD Type Product specification 2SD1005 Features World standard miniature package: SOT-89. High collector to base voltage: VCBO 100V. Excellent dc current gain linearity: hFE=80TYP. VCE=2V, IC=500mA . Absolute Maximum Ratings Ta = 25 Parameter

Contextual Info: SMD Type Type SMD Transistors IC Product specification 2SC5209 Features High voltage VCEO=50V. Small package for mounting. High hFE = 600 to 1800. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 50 V Emitter-base voltage

31224

Abstract: ISO14001 FS-555 epson CRYSTAL SMD
Contextual Info: SAW device SAW RESONATOR FS-555 Reflow solderable SMD ceramic package. Capable of covering a wide frequency range, from 200 MHz to 500 MHz. 1.5mm thickness is equal to SMD-type IC. Perfect for small wireless equipment. Actual size Specifications characteristics

FR4 substrate height and thickness

Abstract: FR4 0.8mm thickness FR4 substrate height and thickness 1.2 FR4 height thickness substrate ltcc chip distance ring ltcc fr4 substrate
Contextual Info: NETWORKS Hybrid IC MULTI CHIP MODULE • SYSTEM iN PACKAGE MCM CONSTRUCTION SMD SMD Bonding Wire Bonding Wire Solder BallBall Solder Bare Chip Bare Chip Substrate Substrate Several semiconductors in one package offers downsized system with high performance and standardization

smd marking wc

Contextual Info: SMD Type Type SMD Transistors IC Product specification 2SC5214 Features High fT fT=100MHz typ. Excellent linearity of dc forward current gain. High collector current ICM=1.5A. Small package for mounting. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage

transistor SMD DK

Abstract: dm SMD MARKING sot-89 smd transistor marking DK marking dk sot-89 TRANSISTOR SMD PNP 1A smd MARKING dk dk SOT89 DM sot-89 TRANSISTOR MARKING DM 2SB798
Contextual Info: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB798 Features World standard miniature package:SOT-89 Low collector saturation voltage:VCE sat <-0.4V(IC=-1.0A,IB=-100mA) Excellent DC Current Gain Linearity:hFE=100TYP.(VCE=-10.V,IC=-1.0A) Absolute Maximum Ratings Ta = 25

Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7603 Features Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile 1.1mm Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

KRF7506

Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7506 Features Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile 1.1mm Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol

AN0005

Abstract: CHA2093RBF RO4003
Contextual Info: CHA2093RBF 20-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a two-stage wide band monolithic low noise amplifier. • Broad band performance: 20-30GHz

fm transmitter

Abstract: FM varicap varicap diodes Varicap fm transmitter ic HVC376B 376B HVD376B quality FM TRANSMITTER "FM transmitter
Contextual Info: Varicap Diodes for FM Transmitter Feb 2007 Renesas Technology provides varicap diodes best match for FM transmitter, HVC376B UFP and smaller one of HVD376B (SFP). IC External Circuit Features of HVC376B, HVD376B 1. Small SMD Package FM Transmitter IC Phase

8a smd

Abstract: 47 8A KRF7601
Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7601 Features Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile 1.1mm Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

SMD SINGLE GATE

Abstract: KRF7606
Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7606 Features Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile 1.1mm Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

DIODE SMD 10A

Abstract: 56 pF CH PCH190
Contextual Info: IC IC SMD Type Switching KP8M10 Features Low on-resistance. Built-in G-S Protection Diode. Small and Surface Mount Package. Power switching, DC / DC converter. Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Unit Drain-source voltage

AN0005

Abstract: CHA2093 CHA2093RBF
Contextual Info: CHA2093RBF 20-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a two-stage wide band monolithic low noise amplifier. • Broad band performance: 20-30GHz

smd diode br

Abstract: diode 66a KRF7501
Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7501 Features Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile 1.1mm Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol

KRF7607

Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7607 Features Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile 1.1mm Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

KRF7509

Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7509 Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter