SMD PD 550 L5 Search Results

BCP56

Abstract: LM7805 PTF080601E PTF080601F transistor smd marking NE
Contextual Info: PTF080601E PTF080601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 860 – 960 MHz Description PTF080601E Package 30265 The PTF080601E and PTF080601F are 60-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 860 to 960 MHz band. Thermally-enhanced packaging provides the coolest operation possible. Full gold metallization ensures excellent device lifetime

smd 809 x transistor

Abstract: blt50 MEA218 philips Trimmer 60 pf L6 TRANSISTOR philips 2222 trimmer
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT50 UHF power transistor Product specification April 1991 Philips Semiconductors Product specification UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. BLT50 QUICK REFERENCE DATA

BLT50

Abstract: philips Trimmers 2222 series MEA218 MEA223 RF Transistor smd transistor zl
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT50 UHF power transistor Product specification File under Discrete Semiconductors, SC08b April 1991 Philips Semiconductors Product specification UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures

BLT50

Abstract: ptfe trimmer philips 100 pf film dielectric trimmer BLT50,115
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT50 UHF power transistor Product specification April 1991 Philips Semiconductors Product specification UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. BLT50 QUICK REFERENCE DATA

Contextual Info: DISCRETE SEMICONDUCTORS DAT BLT50 UHF power transistor Product specification April 1991 Philips Semiconductors Product specification UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. BLT50 QUICK REFERENCE DATA

FNR-10K471

Abstract: 14K621 FNR-14K 20K431 10K471 VARISTOR 20k431 FNR-07K471 FNR-10K271 FNR-20K431 FNR-40K471
Contextual Info: Multilayer Chip Varistors & Leaded Disc Varistors www.johansondielectrics.com SMD CHIP VARISTORS CHIP VARISTOR FEATURES • • • • • • • SMD type chip varistors are highly reliable in surface mount applications. Wide operating voltage range. Large withstanding surge current and energy at small size

sot23 jyw

Abstract: JYW SOT23 1FT sot23-6 LM3478 LM5021 USB-S MINI LM3551 LM5000 sfe 16 t34 smd
Contextual Info: LED Ü 2Á IK S £.1-5.] 2 0 0 6 ^ 1 1 ^ 714 *]£! l LED . 1-3 :¡I£íb{ zEä .4-5 jjg s j LED H 4 ° l * l ^ r qC>1 o ]S fl ^ 7 > ^ o ] = a^|fcH . 6-7 3*1 ^ l l t f n ? 1 3 } H s . *n:§ - i 4 4 . i m ^ i S . * ¿ 2 . ^ 4 4 « L E D

VIM-332

Abstract: 200B103MW 50X 200B103MW
Contextual Info: PTF 102088 LDMOS RF Power Field Effect Transistor 45 Watts, 2110–2170 MHz Key Features The PTF 102088 is a 45–watt internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates with 47% efficiency at P–1dB and has a

Contextual Info: P4C1256 HIGH SPEED 32K x 8 STATIC CMOS RAM * FEATURES • ■ ■ ■ ■ ■ Three-State Outputs ■ Fully TTL Compatible Inputs and Outputs ■ Advanced CMOS Technology High Speed Equal Access and Cycle Times — 12/15/20/25/35 ns (Commercial) — 15/20/25/35/45 ns (Industrial)

Contextual Info: SMD CHIP VARISTORS CHIP VARISTOR FEATURES • • • • • • • SMD type chip varistors are highly reliable in surface mount applications. Wide operating voltage range. Large withstanding surge current and energy at small size Suitable for high speed signal line due to small capacitance

Contextual Info: P4C1256 HIGH SPEED 32K x 8 STATIC CMOS RAM A - FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High Speed Equal Access and Cycle Times — 12/15/20/25/35 ns (Commercial) — 15/20/25/35/45 ns (Industrial) — 20/25/35/45/55/70 ns (Military)

whirlpool awg 175

Abstract: whirlpool awg 650 display lmg 162 stn easy logic display lmg 162 stn lmg 162 stn BSC2A16DLGY SSC2E16DLYY ZTT-4.00MG BSC2A16DLYY ZTB455E
Contextual Info: U.S. Electronics Inc., About Us . Established in 1995, U.S. Electronics is a leading edge manufacturer of high quality passive electronic components and accessories for the OEM markets. With multiple manufacturing locations in the US, France, Korea, Taiwan and China, we can

smd diode UJ 64 A

Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
Contextual Info: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 office@roithner-laser.com, www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.

0m02

Abstract: SMD code l32 30PF P4C1256 P4C1256L 2h22
Contextual Info: P4C1256 HIGH SPEED 32K x 8 STATIC CMOS RAM A - FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High Speed Equal Access and Cycle Times — 12/15/20/25/35 ns (Commercial) — 15/20/25/35/45 ns (Industrial) — 20/25/35/45/55/70 ns (Military)

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

Contextual Info: CY7C251 CY7C254 16K x 8 Power Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogramm ability • High speed The CY7C251 and CY7C254 are high-performance 16,384-word by 8-bit CMOS PROMs. When deselected, the

6 Pin LED PIRANHA

Abstract: everlight 50-215 smd transistor 2T EHP-A09K-BRTT-5670HEAFAD9K-1T8-AM PLR262 19-237A/R6GHBHC-B01/2T IRM-3638M-X
Contextual Info: CATALOGUE 2014-2015 OPTOELECTRONIC COMPONENTS www.everlight.com EVERLIGHT THE SOURCE OF LIGHT EVERLIGHT illuminates the way for many of the world’s brightest companies. Acclaimed as a premiere global solution provider in the opto-semiconductor industry and held in high regard as a reliable

schematic diagram PWM 30a

Abstract: schematic diagram PWM 12V 30a MCH215C104KP RK73H2A2002F TP10 C1608X5R0J224K dc to dc converter 12v to 5v 30a diagram IRF 850 mosfet 12v 5v converter RK73H2A1002F
Contextual Info: PD - 97096 iP2002PbF Synchronous Buck Multiphase Optimized BGA Power Block Integrated Power Semiconductors, Drivers & Passives Features: • • • • • • • Output current 30A continuous with no derating up to TPCB = 90°C and TCASE = 90°C Operating frequency up to 1MHz

schematic diagram PWM 30a

Abstract: RK73H2A1002F schematic diagram PWM 12V 30a MCH215C104KP sot23 Marking f7 smd PD 550 L5 RK73H2A2002F 12v 5v converter TP10 RK73H2A2491F
Contextual Info: PD - 94568A iP2002 Synchronous Buck Multiphase Optimized BGA Power Block Integrated Power Semiconductors, Drivers & Passives Features: • • • • • • • Output current 30A continuous with no derating up to TPCB = 90°C and TCASE = 90°C Operating frequency up to 1MHz

LM7805 smd

Abstract: LM7805 smd 8 pin marking us capacitor pf l1 smd marking f2 TRANSISTOR circuit of lm7805 transistor smd marking ND BCP56 LM7805 PTF080451 PTF080451E
Contextual Info: PTF080451 LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz Description Features The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

BLF188XR NXP

Abstract: blf188
Contextual Info: BLF188XR; BLF188XRS Power LDMOS transistor Rev. 5 — 12 November 2013 Product data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1.

Motorola transistor smd marking codes

Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Contextual Info: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.

DARLINGTON TRANSISTOR ARRAY

Contextual Info: EVERLIGHT. THE SOURCE OF LIGHT. EVERLIGHT illuminates the way for many of the world’s brightest companies. Acclaimed as a premiere global solution provider in the opto-semiconductor industry and held in high regard as a reliable partner for many of the world’s leading electronics companies,