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    SMD TRANSISTOR INFINEON Search Results

    SMD TRANSISTOR INFINEON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR INFINEON Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    transistor smd MJ 145

    Abstract: d 132 smd code diode d 132 smd diode qd SMD SMD TRANSISTOR qd BUZ31 smd rgs smd diode 145
    Text: Infineon technologies BUZ 31 SMD SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated tab Pin 1 Pin 2 Pin 3 D Type Vds ¡D ^DS(on) Package Ordering Code BUZ 31 SMD 200 V 14.5 A 0.2 Q D:PAK Q67042-S4131 Maximum Ratings Parameter


    OCR Scan     		q67042-s4131 np-60 transistor smd MJ 145 d 132 smd code diode d 132 smd diode qd SMD SMD TRANSISTOR qd BUZ31 smd rgs smd diode 145 PDF

    6 pin TRANSISTOR SMD CODE PA

    Abstract: BUZ22 smd code buz smd rgs BUZ22 SMD BUZ22SMD Diode smd code sm PH smd transistor PH smd transistor A7J TRANSISTOR SMD XD
    Text: Infineon technologies BUZ 22 SMD SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 D BUZ 22 SMD </ Type 100 V 34 A ^D S on) Package Ordering Code 0.055 Í2 d 2p a k Q67042-S4139 Maximum Ratings Parameter Symbol


    OCR Scan     		BUZ22SMD q67042-s4139 DsJ14 6 pin TRANSISTOR SMD CODE PA BUZ22 smd code buz smd rgs BUZ22 SMD BUZ22SMD Diode smd code sm PH smd transistor PH smd transistor A7J TRANSISTOR SMD XD PDF

    04n03la

    Abstract: 04N03 IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO252-3-11 Q67042-S4177
    Text: OptiMOS 2 Power-Transistor IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A


    Original     		IPD04N03LA IPS04N03LA IPF04N03LA IPU04N03LA P-TO252-3-11 P-TO252-3-23 04n03la 04N03 IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO252-3-11 Q67042-S4177 PDF

    A1502

    Abstract: smd diode code GS Q67065-A7009 SMD CODE G13
    Text: Preliminary Data Sheet IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 2.7 mΩ ID


    Original     		IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB100N06S3L-03 IPI100N06S3L-03 PG-TO263-3-2 A1502 smd diode code GS Q67065-A7009 SMD CODE G13 PDF

    09N03LA

    Abstract: IPS09N03LA 09N03 diode marking 321 09N03LA datasheet IPD09N03LA 09N03LA equivalent IPF09N03LA IPU09N03LA P-TO251-3-1
    Text: IPD09N03LA G IPS09N03LA G OptiMOS 2 Power-Transistor IPF09N03LA G IPU09N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 8.6 mΩ ID


    Original     		IPD09N03LA IPS09N03LA IPF09N03LA IPU09N03LA IPD09N03LA IPF09N03LA IPS09N03LA IPU09N03LA P-TO252-3-11 P-TO252-3-23 09N03LA 09N03 diode marking 321 09N03LA datasheet 09N03LA equivalent P-TO251-3-1 PDF

    070N06L

    Abstract: PG-TO-220-3 PG-TO220-3 g2ns 070N0 D53A
    Text: IPB070N06L G IPP070N06L G OptiMOS Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification R DS on ,max • N-channel enhancement - logic level SMD version ID 60 V 6.7 m: 80 A • 175 °C operating temperature


    Original     		IPB070N06L IPP070N06L PG-TO263-3 PG-TO220-3 070N06L 070N06L PG-TO-220-3 PG-TO220-3 g2ns 070N0 D53A PDF

    Untitled

    Abstract: No abstract text available
    Text: IPD05N03LA G IPS05N03LA G OptiMOS 2 Power-Transistor IPF05N03LA G IPU05N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ ID


    Original     		IPD05N03LA IPS05N03LA IPF05N03LA IPU05N03LA IPD05N03LA IPF05N03LA IPS05N03LA IPU05N03LA P-TO252-3-11 PDF

    05N03LA

    Abstract: IPF05N03LA 05n03l IPD05N03LA IPS05N03LA IPU05N03LA P-TO252-3-11
    Text: IPD05N03LA G IPS05N03LA G OptiMOS 2 Power-Transistor IPF05N03LA G IPU05N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ ID


    Original     		IPD05N03LA IPS05N03LA IPF05N03LA IPU05N03LA IPD05N03LA IPF05N03LA IPS05N03LA IPU05N03LA P-TO252-3-11 05N03LA 05n03l P-TO252-3-11 PDF

    09N03LA

    Abstract: IPS09N03LA IPD09N03LA 09N03 09N03LA datasheet 09N03LA equivalent IPU09N03LA equivalent IPF09N03LA IPU09N03LA P-TO252-3-11
    Text: IPD09N03LA G IPS09N03LA G OptiMOS 2 Power-Transistor IPF09N03LA G IPU09N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 8.6 mΩ ID


    Original     		IPD09N03LA IPS09N03LA IPF09N03LA IPU09N03LA IPD09N03LA IPF09N03LA IPS09N03LA IPU09N03LA P-TO252-3-11 P-TO252-3-23 09N03LA 09N03 09N03LA datasheet 09N03LA equivalent IPU09N03LA equivalent P-TO252-3-11 PDF

    09N03

    Abstract: 09n03lb 09n03l IPD09N03LB PG-TO252-3-11
    Text: IPD09N03LB G IPF09N03LB G IPS09N03LB G IPU09N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max (SMD version) 9.1 mΩ


    Original     		IPD09N03LB IPF09N03LB IPS09N03LB IPU09N03LB PG-TO252-3-11 PG-TO252-3-23 09N03 09n03lb 09n03l PG-TO252-3-11 PDF

    Q67042-S4057

    Abstract: Q67042-S4058 INFINEON PART MARKING marking code br 39 SMD SPB100N03S2-03 SPP100N03S2-03 PN0303
    Text: SPP100N03S2-03 SPB100N03S2-03 Preliminary data OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 30 RDS on max. SMD version 3 ID Package Ordering Code Marking


    Original     		SPP100N03S2-03 SPB100N03S2-03 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67042-S4058 PN0303 P-TO263-3-2 Q67042-S4057 Q67042-S4058 INFINEON PART MARKING marking code br 39 SMD SPB100N03S2-03 SPP100N03S2-03 PN0303 PDF

    2N0807

    Abstract: Q67060-S6082 Q67040-S4263 2n08 spp80n08s2-07 Q67040-S4264
    Text: Preliminary data OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 P-TO262-3-1 VDS 75 V RDS on max. SMD version 7.1 mΩ ID


    Original     		SPI80N08S2-07 SPP80N08S2-07 SPB80N08S2-07 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPB80N08S2-07 SPI80N08S2-07 P-TO220-3-1 2N0807 Q67060-S6082 Q67040-S4263 2n08 Q67040-S4264 PDF

    IPS09N03LA

    Abstract: IPD09N03LA
    Text: IPD09N03LA G IPS09N03LA G OptiMOS 2 Power-Transistor IPF09N03LA G IPU09N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target application V DS 25 V R DS on),max (SMD version) 8.6 mΩ


    Original     		IPD09N03LA IPS09N03LA IPF09N03LA IPU09N03LA PG-TO252-3-11 Q67042-S4268 PDF

    06n03la

    Abstract: IPD06N03LA
    Text: OptiMOS 2 Power-Transistor IPD06N03LA G IPF06N03LA G IPS06N03LA G IPU06N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target application V DS 25 V R DS on),max (SMD version) 5.7 mΩ


    Original     		IPD06N03LA IPS06N03LA IPF06N03LA IPU06N03LA PG-TO252-3-11 Q67042-S4278 06n03la PDF

    IPS04N03LA G

    Abstract: max5199
    Text: OptiMOS 2 Power-Transistor IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A


    Original     		IPD04N03LA IPS04N03LA IPF04N03LA IPU04N03LA IPD04N03LA IPF04N03LA P-TO252-3-11 Q67042-S4177 IPS04N03LA G max5199 PDF

    H6N03LA

    Abstract: H6N03 PG-TO252-3-11 to251 IPDH6N03LA H6N03L
    Text: OptiMOS 2 Power-Transistor IPDH6N03LA G IPFH6N03LA G IPSH6N03LA G IPUH6N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 6 mΩ ID


    Original     		IPDH6N03LA IPSH6N03LA IPFH6N03LA IPUH6N03LA PG-TO252-3-11 PG-TO252-3-23 H6N03LA H6N03 PG-TO252-3-11 to251 H6N03L PDF

    09n03la

    Abstract: IPS09N03LA IPD09N03LA 09n03
    Text: IPD09N03LA G IPS09N03LA G OptiMOS 2 Power-Transistor IPF09N03LA G IPU09N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 8.6 mΩ ID


    Original     		IPD09N03LA IPS09N03LA IPF09N03LA IPU09N03LA PG-TO252-3-11 Q67042-S4268 09n03la 09n03 PDF

    1.B smd transistor

    Abstract: No abstract text available
    Text: BFR460L3 NPN Silicon RF Transistor Preliminary data • For low voltage / low current applications 3 • Ideal for VCO modules and low noise amplifiers • Low noise figure: 1.1 dB at 1.8 GHz 1 • World's smallest SMD leadless package 2 • Excellent ESD performance


    Original     		BFR460L3 1.B smd transistor PDF

    06n03la

    Abstract: IPD06N03LA
    Text: OptiMOS 2 Power-Transistor IPD06N03LA G IPF06N03LA G IPS06N03LA G IPU06N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.7 mΩ ID


    Original     		IPD06N03LA IPS06N03LA IPF06N03LA IPU06N03LA PG-TO252-3-11 Q67042-S4278 06n03la PDF

    2N0605

    Abstract: SPI80N06S2-05 SPB80N06S2-05 SPP80N06S2-05 2N060
    Text: Preliminary data OptiMOSâ Power-Transistor SPI80N06S2-05 SPP80N06S2-05,SPB80N06S2-05 Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • 175°C operating temperature ID • Avalanche rated P-TO262-3-1 max. SMD version P-TO263-3-2 55


    Original     		SPI80N06S2-05 SPP80N06S2-05 SPB80N06S2-05 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP80N06S2-05 Q67040-S4245 2N0605 2N0605 SPI80N06S2-05 SPB80N06S2-05 2N060 PDF

    06n03la

    Abstract: 06n03l 06N03 06n03la datasheet, download SMD BR 32 IPU06N03LA 06n03la datasheet IPS06N03LA TO252-3 IPF06N03LA
    Text: OptiMOS 2 Power-Transistor IPD06N03LA G IPF06N03LA G IPS06N03LA G IPU06N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.7 mΩ ID


    Original     		IPD06N03LA IPS06N03LA IPF06N03LA IPU06N03LA IPD06N03LA IPF06N03LA IPS06N03LA IPU06N03LA P-TO252-3-11 P-TO252-3-23 06n03la 06n03l 06N03 06n03la datasheet, download SMD BR 32 06n03la datasheet TO252-3 PDF

    Q67042-S4057

    Abstract: SPB100N03S2-03 SPI100N03S2-03 SPP100N03S2-03 PN0303
    Text: Preliminary data SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • 175°C operating temperature ID • Avalanche rated P-TO262-3-1 max. SMD version 30 V 3 mΩ


    Original     		SPI100N03S2-03 SPP100N03S2-03 SPB100N03S2-03 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP100N03S2-03 Q67042-S4058 PN0303 Q67042-S4057 SPB100N03S2-03 SPI100N03S2-03 PN0303 PDF

    Q67042-S4057

    Abstract: ANPS071E SPB100N03S2-03 SPI100N03S2-03 SPP100N03S2-03 PN0303 Q67042-S4058
    Text: SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS on max. SMD version 3 mΩ • Excellent Gate Charge x RDS(on) product (FOM) ID • Superior thermal resistance


    Original     		SPI100N03S2-03 SPP100N03S2-03 SPB100N03S2-03 SPP100N03S2-03 Q67042-S4058 Q67042-S4057 PN0303 Q67042-S4116 Q67042-S4057 ANPS071E SPB100N03S2-03 SPI100N03S2-03 PN0303 Q67042-S4058 PDF