SMD TRANSISTOR LL Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

transistor smd LC 77

Abstract: D103D smd transistor 2x5 smd transistor ne c2 BLT81 TRANSISTOR SMD catalog smd ic 611 SMD ic catalogue UHF POWER TRANSISTOR SMD Transistor 1c
Contextual Info: Philips Semiconductors Product specification UHF power transistor BLT81 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. APPLICATIONS • Hand-held radio equipment in the 900 MHz communication band. C DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a

smd transistor kn

Abstract: PZT3906
Contextual Info: •I bbSBTBl OQELDOb 6fl3 H A P X PZT3906 b?E T> N AUER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a microminiature SMD envelope SOT-223 . Designed prim arily fo r high-speed, saturated switching applications in industrial service.

Contextual Info: tUN 11 » « DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS t.b53T31 0035171 507 P h lllp i Sem iconductor! Product specification UHF power transistor FEATURES • SMD encapsulation • Gold m etallization ensures excellent reliability. BLT80 QUICK REFERENCE DATA

MARKING CODE SMD IC

Abstract: PMBTA45 PBHV9050T smd transistor LL sot23
Contextual Info: PBHV9050T 500 V, 150 mA PNP high-voltage low VCEsat BISS transistor Rev. 01 — 16 September 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

Contextual Info: CHIP PHOTO-TRANSISTOR CmSENSOR mum • Features 1. Developed as a chip type SMD photo-transistor for both right-angle and upright uses 2. Small and square size, dimensions : 3.2 L x 2.4(W)x2.4(H)mm 3. Automatic mounting by chip mounter avail­ able 4. Reflow soldering available

transistor A25 SMD

Abstract: transistor smd ZR tic 126 TRANSISTOR SMD I-314 transistor smd ZR 22 i314
Contextual Info: ü iä H W S & ' y y y * h VzjyVTs^ C P T - 2 9 5 / U — X _ Surface Mountable Chip Photo-transistor CPT-290 Series Features 1. f Ä 7 D f R ] ^ ö ' p ZJj - h 1. Developed as a chip type SMD photo­ transistor for both reverse and top

Contextual Info: CHIP PHOTO-TRANSISTOR CmSENSOR mum ’\ .* y 7 M 7 x ^ :ÿyyx$-c±miBi • Features 1. Developed as a chip type SMD phot-transistor for both reverse and top surface mounting 2. Small and square size, dim ensions : 3 ,2 L x 1.6(W)X1,1 (H)mm 2. ^- -Î;ïl3;3.e(L)xl.6(W)xl.i(H)

SOT-89 transistor marking LM

Abstract: smd transistor marking Lk smd transistor marking LL marking 10 sot-89 smd transistor LL 2SD1000
Contextual Info: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SD1000 Features World standard miniature package:SOT-89. Low collector saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage

smd zener diode 5v

Abstract: Zener diode smd marking 22 Zener diode smd marking 36 smd transistor marking 36 transistor smd P.D 1 zener smd marking GI TRANSISTOR SMD 04 k 1 SMD Transistor diode smd marking 22 SMD TRANSISTOR High Voltage Transistor
Contextual Info: Transistors SMD Type Digital Transistors DTDG23YP Features NPN Epitaxial Planar Silicon Transistor with built-in resistors and zener diode . High DC Current Gain. Built-in Zener Diode Gives Strong Protection Against Reverse Surge By L-load (an inductive load).

Contextual Info: SMD Type Product specification DTDG23YP Features NPN Epitaxial Planar Silicon Transistor with built-in resistors and zener diode . High DC Current Gain. Built-in Zener Diode Gives Strong Protection Against Reverse Surge By L-load (an inductive load). Absolute Maximum Ratings Ta = 25

transistor MAR 819

Abstract: transistor MAR 543 sl2 357 BFS17
Contextual Info: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4

transistor SMD Lf

Abstract: LF transistor smd SOT-23 lF smd transistor SMD Transistor LF BKC Semiconductors
Contextual Info: Switching Diode SMD SOT-23 Plastic Use Advantages T3 S Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,

BKC Semiconductors

Contextual Info: Dual Switching Diodes SMD SOT-23 Plastic Use Advantages S 13 Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,

Contextual Info: Diodes IC Transistors Transistor T SMD Type Product specification KTC4075 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 1 0.55 ● Collector Current: IC=150mA +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector Power Dissipation: PC=100mW 0.4 3 2 +0.1 0.95-0.1

702 TRANSISTOR smd

Abstract: smd 58a transistor 6-pin transistor 702 F smd TRANSISTOR SMD 702 N 702 L TRANSISTOR smd 702 Z TRANSISTOR smd 702 N smd transistor transistor 702 smd SMD transistor code 702 702 transistor smd code
Contextual Info: SIEMENS BUZ 101L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv^di rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ101L Vbs 50V *> 29 A RaS on

Contextual Info: Transistors SMD Type Epitaxial Planar NPN Transistor KTC4075 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 1 0.55 ● Collector Current: IC=150mA +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector Power Dissipation: PC=100mW 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1

Contextual Info: N AMER P H ILIP S /D IS C R E T E b'lE T> • bbSB'iai D0Sfl7ST B7T » A P X rm n p o rro u u m s p w m w u u n BLT81 UHF pow er transistor FEATURES • SMD encapsulation • Gold metallization ensures

smd transistor LY

Abstract: lg smd transistor smd transistor marking BL smd transistor MARKING lg smd transistor marking LL smd transistor LL smd transistor NF smd marking ly smd Transistor LG smd marking LG
Contextual Info: Transistors SMD Type Silicon NPN Epitaxial Type Transistor 2SC2712 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 700 1 Low noise: NF = 1dB typ. , 10dB (max) 0.55 High hFE: hFE = 70 +0.1 2.4-0.1 Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.)

Contextual Info: uim 1. ^ymy^^y'Jxs>-c±mR uTmmm^m0 • Features 1. Developed as a chip thpe SMD phot-transistor for both reverse and top surface mounting. 2. ^ffi\ -^IS3.8(L xl.6(W)xl.l(H) 2. Small and square size, dimensions : 3 .2 (L)x 1.6(W)X1.1 (H)mm. m < D / im - n m v '( X o

CL-200IR

Abstract: CPT181S CPT-181S
Contextual Info: CHIP PHOTO-TRANSISTOR CmSENSOR • ft» ■ Features 2. ^ Jfi^ jilS 3 .2 L x p .4 (W )x 2 .4 (H ) 1. Developed as a chip type SMD photo-tran­ sistor for both right-angle and upright uses. 2. Small and square size, dimensions : 3.2(L)x 2.4(W)x2.4(H)mm. 3. Automatic mounting by chip mounter avail­

smd transistor SOT-23 fj

Contextual Info: BF824 Jv _ H.F. SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P tran sisto r in a plastic SO T-23 package especially intended fo r r.f. stages in f.m . front-ends in com m on base c o n fig u ra tio n fo r SMD applications. Q U IC K R E F E R E N C E D A T A

Contextual Info: mm/ Features 1. î M M t t Q M D i m m M & r J W X 37ï?o tä^cDämmm 2. ^ y y v o y ^ - i ^ ^ y i j y 3. J 7 D - [ i ^ m hs 1. Developed as a chip-type SMD Photo-transistor 2. Automatic mounting by chip mounter available 3. Reflow soldering available o