SO DIMM 100 PIN PINOUT EDO Search Results
SO DIMM 100 PIN PINOUT EDO Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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MG80C196KB |
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80C196KB - Microcontroller, 16-bit, MCS-96, 68-pin Pin Grid Array (PGA) |
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PAL16L8B-4MJ/BV |
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PAL16L8B - 20 Pin TTL Programmable Array Logic |
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PAL16L8-7PCS |
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PAL16L8 - 20-Pin TTL Programmable Array Logic |
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54F191/Q2A |
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54F191 - Up/Down Binary Counter with Preset and Ripple Clock. Dual marked as DLA PIN 5962-90582012A. |
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TPS53832ARWZR |
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Low-current PMIC for DDR5 server DIMMS with logging auto-clear function 35-VQFN-HR -40 to 105 |
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SO DIMM 100 PIN PINOUT EDO Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: IBM11S4325BP IBM11S4325BM 4M x 32 SO D IM M M odule Features • 72-Pin Small Outline Dual-ln-Line Memory Module • Performance: -60 -70 tRAc RAS Access Time 60ns 70ns tcAC CAS Access Time 15ns 20ns 30ns 35ns U a Access Time From Address ìrc Cycle Time tHPC EDO Mode Cycle Time |
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IBM11S4325BP IBM11S4325BM 72-Pin 104ns 124ns 50H4745 SA14-4458-01 | |
Contextual Info: IBM11S1325LP IBM11S2325LP 1M/2M x 32 SO DIMM Module Features 72-Pin Small Outline Dual-ln-Line Memory Module Performance: • -60 tRAC 5RAS Access Time 60ns tcAC | CAS Access Time 15ns U a | Access Time From Address 30ns tRC | Cycle Time I 104ns i tHPC | EDO Mode Cycle Time |
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IBM11S1325LP IBM11S2325LP 72-Pin 104ns 128ms IBM11S2325LP | |
SO DIMM 100 Pin Pinout edoContextual Info: Discontinued 9/98 - last order; 3/99 last ship IBM11T2645HP 2M x 6411/10, 3.3V, EDOMMDD41DSU-001019432. IBM11T2645HP 2M x 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • 2Mx64 Extended Data Out SO DIMM |
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IBM11T2645HP EDOMMDD41DSU-001019432. IBM11T2645HP 2Mx64 VSS/18VCC 104ns 124ns SA14-4460-04 SO DIMM 100 Pin Pinout edo | |
Contextual Info: Discontinued 9/98 - last order; 3/99 last ship IBM11T1645LP 1M x 6410/10, 3.3V, EDOMMDD41DSU-001019232. IBM11T1645LP 1M x 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Au contacts |
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IBM11T1645LP EDOMMDD41DSU-001019232. IBM11T1645LP 1Mx64 VSS/18VCC 104ns 124ns | |
ov97Contextual Info: “ H V. Y U N D .7— A I } •„ ✓ - • H Y M 5 V 6 4 2 1 4 C Z - S e r i e s SO DIMM 2MX64 bit CMOS DRAM MODULE based on 2Mx8 DRAM, EDO, 2K-Refresh GENERAL DESCRIPTION The H Y M 5 V 6 4 2 1 4 C Z -S e rie s is a 2Mx64-bit Extended Data Out mode C M O S D R A M m odule consisting of |
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2MX64 2Mx64-bit 144-Ph A0-A10) DQ0-DQ63) ov97 | |
SO DIMM 100 Pin Pinout edoContextual Info: Discontinued 9/98 - last order; 3/99 last ship IBM11T1645NP 1M x 6410/10, 3.3V, EDOMMDD41DSU-001049432. IBM11T1645NP IBM11T2645NP 1M/2M x 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses |
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IBM11T1645NP EDOMMDD41DSU-001049432. IBM11T1645NP IBM11T2645NP 1M/2Mx64 VSS/18VCC 104ns GA14-4478-01 SO DIMM 100 Pin Pinout edo | |
HY51V17804CContextual Info: HYM5V64214C Z-Series SO DIMM 2Mx64 bit CMOS DRAM MODULE based on 2Mx8 DRAM, EDO, 2K-Refresh GENERAL DESCRIPTION The HYM5V64214C Z-Series is a 2Mx64-bit Extended Data Out mode CMOS DRAM module consisting of eight HY51V17804C in 28 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 144 pin Zig Zag pin glassepoxy printed circuit board. 0.01µF and 0.1µF decoupling capacitors are mounted for each DRAM. |
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HYM5V64214C 2Mx64 2Mx64-bit HY51V17804C HYM5V64214CZG/CTZG 144-Pin A0-A10) DQ0-DQ63) | |
DRAMs
Abstract: Dram 168 pin EDO buffered PQFP-128 Multibank - DRAM Signal Path Designer Bus repeater 64MEDO
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64M-EDO 4/x72 DRAMs Dram 168 pin EDO buffered PQFP-128 Multibank - DRAM Signal Path Designer Bus repeater 64MEDO | |
Contextual Info: HYM5V64214A Z-Series SO DIMM 2Mx64 bit CMOS DRAM MODULE based on 2Mx8 DRAM, EDO, 2K-Refresh GENERAL DESCRIPTION The HYM5V64214A Z-Series is a 2Mx64-bit Extended Data Out mode CMOS DRAM module consisting of eight HY51V17804B in 28 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 144 pin Zig Zag pin glassepoxy printed circuit board. 0.01µF and 0.1µF decoupling capacitors are mounted for each DRAM. |
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HYM5V64214A 2Mx64 2Mx64-bit HY51V17804B HYM5V64214AZG/ATZG 144-Pin 16-bit A0-A10) DQ0-DQ63) | |
IBM13T8644MPB
Abstract: IBM11M4730C4M IBM13T4644MPB
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IBM11M4730C4M E12/10, IBM13T4644MPB IBM13T8644MPB 4/8Mx64 IBM13T8644MPB IBM13T4644MPB | |
simm 72 edo 256Contextual Info: SIEM EN S Trends in Memory Technology Trends in Trends in M em ory Technology w hen CAS goes high again and initiates the next page access. DRAM speed im provem ents have historically com e from process and photolithography advances. More recent im provem ents in DRAM |
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64MEDO i32/x36 simm 72 edo 256 | |
dq35j
Abstract: 8X64
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IBM13T4644MPB IBM13T8644MPB 4/8Mx64 dq35j 8X64 | |
Contextual Info: IBM11S1320NL1M x 3212/8, 5.0V, Au. IBM11S1320NN1M x 3212/8, 3.3V, Au. IBM11S8320HP 8M x 32 SO DIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -60 tRAC RAS Access Time 60ns tCAC CAS Access Time 15ns tAA Access Time From Address |
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IBM11S1320NL1M IBM11S1320NN1M IBM11S8320HP 72-Pin 110ns 256ms | |
ty 8016
Abstract: SO-DIMM 144-pin DQ401
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IBM11T2640HP 110ns 130ns Vss/18Vcc 256ms IBM11T2640HP ty 8016 SO-DIMM 144-pin DQ401 | |
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Contextual Info: IBM11T2645HP 2M x 64 144 PIN SO DIMM v •<<t - >-«Ä» Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Au contacts |
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IBM11T2645HP 2Mx64 Vss/18Vcc 256ms 50H7630 SA14-4460-01 | |
Contextual Info: IBM11S1325LP IBM11S2325LP IBM11S1325LM IBM11S2325LM 1M/2M x 32 SO DIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: tflAC RAS Access Time tcAC CAS Access Time • • • • -60 -6R •70 60ns 60ns 70ns 15ns 17ns 20ns |
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IBM11S1325LP IBM11S2325LP IBM11S1325LM IBM11S2325LM 72-Pin 104ns 124ns 128ms | |
TAA 861 A11
Abstract: IBM DIMM 32MB
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IBM11S1320NL1M IBM11S1320NN1M IBM11S8325HP 72-Pin 110ns 256ms TAA 861 A11 IBM DIMM 32MB | |
Contextual Info: IBM11T4640MP 4M X 64 144 PIN SO DIM M Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • 1Mx64 Fast Page Mode SO DIMM • Performance: •50 -60 tRAC RAS Access Tim e 50ns 60ns tcAC CA S Access Tim e |
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IBM11T4640MP 1Mx64 110ns ss/18V 256ms IBM11T4640M | |
taa 861Contextual Info: IBM11S1320NL1M x 3212/8, 5.0V, Au. IBM11S1320NN1M x 3212/8, 3.3V, Au. IBM11S8320HP 8M x 32 SO DIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -60 tRAC RAS Access Time 60ns tCAC CAS Access Time 15ns tAA Access Time From Address |
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IBM11S1320NL1M IBM11S1320NN1M IBM11S8320HP 72-Pin 110ns 256ms taa 861 | |
IBM11M4730C4MContextual Info: Discontinued 8/99 - last order; 12/99 - last ship IBM11M4730C4M x 72 E12/10, 5.0V, Au. IBM13T8644HPB IBM13T8644HPC 8M x 64 SDRAM SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 8Mx64 Synchronous DRAM SO DIMM |
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IBM11M4730C4M E12/10, IBM13T8644HPB IBM13T8644HPC 8Mx64 | |
Contextual Info: IBM11T4645MP 4M Zittii ViumiiiWI ^ unniniwi n m rflu irai»'I TiWTn •■ir nm n i Id HÜ il ii, I I I X 64 144 PIN SO DIMM -iniTi '!»» linm 11 TTf Iil I <>l>n 1*1V iI‘| w riir n<4 Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses |
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IBM11T4645MP 1Mx64 ss/18V 256ms 50H7631 SA14-4461 | |
GA15-5285-05
Abstract: ga15 engine wiring diagram so-dimm 200 IBM11M4730C4M
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IBM11M4730C4M E12/10, IBM13T2649NC 2Mx64 GA15-5285-05 ga15 engine wiring diagram so-dimm 200 | |
ga15 engine wiring diagram
Abstract: IBM11M4730C4M
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IBM11M4730C4M E12/10, IBM13T4644MC IBM13T1649NC 1Mx64 ga15 engine wiring diagram | |
Contextual Info: IB M 1 1 S 8 3 2 5 H P 8M x 32 SO DIMM Module Features • 72-Pin Small Outline Dual-ln-Line Memory Module • Performance: High Performance CMOS process Single 3.3V ± 0.3V Power Supply Low active current consumption All inputs & outputs are LVTTL 3.3V compati |
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72-Pin 256ms IBM11S8325HP 75H2026 SA14-4473-00 Q0CHS22 IBM11S8325HP 8Mx32 |