SO DIMM DRAM 144 PIN CONNECTOR PINOUT Search Results

SO DIMM DRAM 144 Pin Connector Pinout

Abstract: SO DIMM 100 Pin Connector Pinout "simm 72 pin" SO DIMM 72-pin 168-pin sdram dimm x64 edo dram 72-pin SO DIMM
Contextual Info: INFORMATION NOTE Presence Detect Assignments on SIEMENS Memory Modules 3.97 Weidlich, Technical Marketing Memories INFOMOD3.FRM MEMORY MODULES Overview: This information note describes the organisation and presence detect assignments used on the SIEMENS memory module families. The SIEMENS memory module families come with present

Contextual Info: Application Note 168 Pin DIMM Characteristics Basic Architecture A listing of the 168 Pin DIMM Pin Assignments begins on page 1362. Intended primarily for use in 8-byte systems, although use in 4-byte systems is supported via on­ board interleave, the basic structure of 168 pin

PQ62

Abstract: DQ73
Contextual Info: 168 Pin DIMM Characteristics. 168 Pin Buffered DIMM Characteristics Basic Architecture ECC Data Bit Assignments DRAM CHIPS Intended primarily for use in 8-byte systems, although use in 4-byte systems is supported via onboard interleave, the basic structure of 168 pin

SO DIMM DRAM 144 Pin Connector Pinout

Abstract: SO DIMM 100 Pin Connector Pinout cb815 CB15 CB1215 DIMM 72 pin out
Contextual Info: cts. a h IC M A R D rd fe u b U in P 8 6 1 168 Pin Unbuffered DRAM DIMM Characteristics Introduction Features The IBM 168 pin 8 Byte Unbuffered DIMM family has been developed as an optimized, low-cost, main memory solution for both 4 and 8 byte processor applications and are ideally suited for use in highend personal computers with PentiumTM, PowerPCTM

ms 14531

Abstract: CSR BC8 3130* intel Interconnect BIST SMA diode marking e7 WL4 DIODE MARKING Ps3 MOTHERBOARD CIRCUIT diagram
Contextual Info: Intel 6400/6402 Advanced Memory Buffer Datasheet May 2006 Reference Number: 313072-001 IINFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS

Ps3 MOTHERBOARD CIRCUIT diagram

Abstract: CSR BC5 diode A14A surface mount CC5F csr bc4 CSR BC6 DQ1 relay dec Ps4 MOTHERBOARD CIRCUIT diagram 313072 d3 6402 9
Contextual Info: Intel 6400/6402 Advanced Memory Buffer Datasheet October 2006 Reference Number: 313072-002 IINFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS

SO DIMM DRAM 144 Pin Connector Pinout

Abstract: SO DIMM 100 Pin Connector Pinout CB15 BA142
Contextual Info: cts. a h IC M A R D S rd fe u b U in P 8 6 1 168 Pin Unbuffered SDRAM DIMM Characteristics Basic Architecture SDRAM Addressing Effects The IBM 168 pin 8 Byte Unbuffered SDRAM DIMM is intended for personal computers and workstations using eight byte memory interfaces. These systems

SO DIMM DRAM 144 Pin Connector Pinout

Abstract: CB15 SO DIMM 100 Pin Connector Pinout
Contextual Info: cts. a h IC M A R D S rd fe u b U in P 8 6 1 168 Pin Unbuffered SDRAM DIMM Characteristics Basic Architecture SDRAM Addressing Effects The IBM 168 pin 8 Byte Unbuffered SDRAM DIMM is intended for personal computers and workstations using eight byte memory interfaces. These systems

pc133 SDRAM DIMM package

Contextual Info: IBM13M32734BCB Preliminary 32M x 72 2-Bank Registered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 32Mx72 Synchronous DRAM DIMM -75A Reg • • • • • • j Units | 4 DIMM CAS Latency f X Clock Frequency 133 t;<

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Contextual Info: DRAM MODULE KMM364V400AK/AS KMM364V400AK/AS Fast Page Mode 4Mx64 DRAM DIMM, 4K Refresh, 3.3V G EN ERA L DESCRIPTION FEATURES The Samsung KMM364V400A is a 4M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364V400A consists of sixteen CMOS 4Mx4bit DRAMs in SOJ/TSOP-II 300mil packages

Contextual Info: DRAM MODULE KMM372V41 OAK/A S KMM372V41 OAK/AS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 2K Refresh, 3.3V G EN ERA L D ESC RIPTIO N FEATURES The Samsung KMM372V410A is a 4M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372V410A consists of eighteen

Contextual Info: DRAM MODULE KMM364C124AJ KMM364C124AJ Fast Page Mode 1Mx64 DRAM DIMM based on 1Mx16,1K Refresh, 5V G E N E R A L DESCRIPTION FE A T U R E S The Samsung KMM 364C124AJ is a 1M bit x 64 Dynamic RAM high density memory module. The Samsung KM M 364C124AJ consists of four C M O S

Contextual Info: KMM364V41OAK/AS DRAM MODULE KMM364V41 OAK/AS Fast Page Mode 4Mx64 DRAM DIMM , 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM364V410A is a 4M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364V410A consists of sixteen CMOS 4Mx4bit DRAMs in SOJ/TSOP-JI 300mil packages

Contextual Info: IBM13M8734HCB P relim inary 8M x 72 1 B ank R egistered S D R A M M odule Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 8Mx72 Synchronous DRAM DIMM • Performance: : -75A Reg. . i. .- -I Units

Contextual Info: IBM13M64734BCA 64M x 72 1-Bank Registered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 64Mx72 Synchronous DRAM DIMM -75A Reg 4 I | DIMM CAS Latency i fCK • • • • • • • Ì Clock Frequency I ; Units i 133 i

Contextual Info: IBM13M8734HCB 8M x 72 1 B ank R egistered S D R A M M odule Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 8Mx72 Synchronous DRAM DIMM • Performance: : ; DIMM CAS Latency • • • • • • • ; -75A Reg. 4 ; Units ; fCK ; Clock Frequency

SO DIMM 100 Pin Connector Pinout

Abstract: SO DIMM DRAM 144 Pin Connector Pinout
Contextual Info: IBM13M8734HCB Preliminary 8M x 72 1 Bank Registered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module 8Mx72 Synchronous DRAM DIMM Performance: i -75A Reg. ; , j | DIMM CAS Latency I 4 : ; 133 100 MHz ! fd< i Clock Frequency i 7.5 ! 10.0 j ns !

Contextual Info: IBM13M64734CCA Preliminary 64M x 72 2-Bank Registered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 64Mx72 Synchronous DRAM DIMM DIMM CAS Latency fcK I Clock Frequency tcK | Clock Cycle tan \ Clock Access Time • • •

Contextual Info: V Z À I/VHITE /MICROELECTRONICS WPD8M72-XMDC 8Mx72 DRAM D IM M FEATURES GENERAL DESCRIPTION • The WPD8M72-XMDC is a 8M x 72 bit Dynamic RAM high density memory module. The module consists of thirty-six 4M x 4 bit DRAMs in 24-pin TSOP packages. The DRAMs are

48V81

Abstract: DG41 SO DIMM DRAM 144 Pin Connector Pinout
Contextual Info: KMM372V803AK/AS KMM372V883AK/AS DRAM MODULE KMM372V803AK/AS & KMM372V883AK/AS Fast Page Mode 8Mx72 DRAM DIMM with ECC based on 8Mx8, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V80 8 3A is a 8M bit x 72 Dynamic RAM high density memory module. The

KM44C4103aj

Abstract: 44C4100 SO DIMM DRAM 144 Pin Connector Pinout km44c4100ak
Contextual Info: DRAM MODULE KMM372C412AK/AS KMM372C412AK/AS Fast Page Mode 4Mx72 DRAM DIMM with QCAS, 2K Refresh, 5V G ENER AL DESCRIPTIO N FEATURES The Samsung KMM372C412A is a 4M bit x 72 Dynamic RAM high density memory module. The • Performance Range: KMM372C412A - 5

PJ 52

Abstract: U1615 U18-18 u1515 U23D-43 U176 U21-18 u1818 L115 U218
Contextual Info: Enhanced Memory Systems Inc. DM1M64DT6/DM1M72DT6 Multibank EOO EDRAM 1Mb x fflM b x 72 Enhanced DRAM DIMM Product Specification Features • l 6Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache ■ Fast 8Mbyte DRAM Array for 30ns Access to Any New Page

Contextual Info: IBM13Q8734HCA 8M x 72 Registered SDRAM Module Features • 200-Pin JEDEC Standard, Registered 8-Byte Dual In-line Memory Module • Automatic and controlled Precharge Commands • 8M x 72 Synchronous DRAM DIMM -SDRAM CAS Latency: 2 -Burst Type: Sequential or Interleave

KM416C1200AJ

Abstract: km416c1200aj 7 hr5 connector RA5-ONLY KMM364C124A
Contextual Info: KMM364C124AJ DRAM MODULE KMM 364C124AJ Fast Page Mode 1Mx64 DRAM DIMM based on 1Mx16, 1K Refresh, 5V G ENERA L DESCRIPTION FEATURES The Samsung KMM364C124AJ is a 1M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364C124AJ consists of four CMOS