SOT 23 70.2 Search Results

702 TRANSISTOR smd SOT23

Abstract: 70.2 marking smd npn Transistor 704 TRANSISTOR smd SOT23 smd transistor marking j5 transistor smd 661 752 SMD IC marking 632 smd marking 271 Sot transistor SOT23 J5 smd transistor 718
Contextual Info: BFS17 / BFS17R / BFS17W VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • High power gain • SMD package 2 3 1 Applications SOT-23 For broadband amplifiers up to 1 GHz. Mechanical Data Typ: BFS17 Case: SOT-23 Plastic case

70.2 marking smd npn Transistor

Abstract: SMD IC marking 632 702 TRANSISTOR smd SOT23 smd transistor marking j5 70.2 TRANSISTOR smd smd transistor 718 transistor marking 702 application sot-23 MARKING 636 transistor smd 661 752 704 TRANSISTOR smd SOT23
Contextual Info: BFS17 / BFS17R / BFS17W VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • High power gain • SMD package 2 3 1 Applications SOT-23 For broadband amplifiers up to 1 GHz. Mechanical Data Typ: BFS17 Case: SOT-23 Plastic case

SOT23 marking 658

Contextual Info: BFS17A / BFS17AR / BFS17AW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • Low noise figure • High power gain • Small collector capacitance 2 3 1 SOT-23 Applications Wide band, low noise, small signal amplifiers up to

Contextual Info: BFS17A / BFS17AR / BFS17AW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • Low noise figure • High power gain • Small collector capacitance 2 3 1 SOT-23 Applications Wide band, low noise, small signal amplifiers up to

70.2 marking smd npn Transistor

Abstract: transistor smd 661 752 702 TRANSISTOR smd SOT23 smd transistor marking j5 smd marking 271 Sot 704 TRANSISTOR smd SOT23 SMD IC marking 632 SOT23 marking 828 SOT MARKING 213 transistor smd marking NA sot-23
Contextual Info: BFS17 / BFS17R / BFS17W Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • • • • High power gain SMD package e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 3 1 SOT-23 Applications

70.2 marking smd npn Transistor

Abstract: smd marking 271 Sot SMD IC marking 632 transistor smd 661 752 704 TRANSISTOR smd SOT23 702 TRANSISTOR smd SOT23 BFS17 BFS17R BFS17W transistor smd marking NA sot-23
Contextual Info: BFS17 / BFS17R / BFS17W Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • • • • High power gain SMD package e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 3 1 SOT-23 Applications

BFR92R

Abstract: sot 23 transistor 70.2 MAR 641 TRANSISTOR
Contextual Info: Temic BFR92/BFR92R Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR92 Marking: PI Plastic case SOT 23

transistor MAR 819

Abstract: transistor MAR 543 sl2 357 BFS17
Contextual Info: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4

2SA1978

Abstract: NE02133 NE97833 NE97833-T1B-A S21E
Contextual Info: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97833 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 5.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE02133 • HIGH INSERTION POWER GAIN: |S21E|2 = 10 dB at 1 GHz 33 SOT 23 STYLE

221-166

Abstract: 2SA1978 NE02133 NE97833 NE97833-T1 S21E k 2445 transistor
Contextual Info: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97833 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 5.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE02133 • HIGH INSERTION POWER GAIN: |S21E|2 = 10 dB at 1 GHz 33 SOT 23 STYLE

221-166

Abstract: 2SA1978 transistor marking T93 NE02133 NE97833 S21E ne02133 MARKING
Contextual Info: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97833 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 5.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE02133 • HIGH INSERTION POWER GAIN: |S21E|2 = 10 dB at 1 GHz 33 SOT 23 STYLE

74299

Abstract: 44071 transistor 104462 39158 76620 54175 82258 75604 TRANSISTOR SOT23, Vbe 8V THN6201S
Contextual Info: THN6201S NPN Planer RF TRANSISTOR SOT-23 □ DESCRIPTION The THN6201S is a low Noise figure and good associated gain performance at UHF,VHF and Microwave frequencies It is suitable for a high density surface mount since transistor has been SOT23 package □ FEATURES

Contextual Info: BFS17A / BFS17AR / BFS17AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • • • • • Low noise figure High power gain e3 Small collector capacitance Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

626 057-0

Abstract: BFS17A BFS17AR BFS17AW 682 MARKING SOT-23 944 SOT323
Contextual Info: BFS17A / BFS17AR / BFS17AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • • • • • Low noise figure High power gain e3 Small collector capacitance Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

La 7833

Abstract: sot 89 2903 CGB7010-BD CGB7010-SC CGB7010-SC-0G00 CGB7010-SC-0G0T CGB7010-SP-0G00 CGB7010-SP-0G0T MCH185A101JK PB-CGB7010-SC-0000
Contextual Info: DC-6.0 GHz InGaP HBT, MMIC or Packaged, Matched Gain Block Amplifier May 2006 - Rev 23-May-06 CGB7010-SC -BD Features Functional Block Diagram (SOT-89) 35.5 dBm Output IP3 @ 850 MHz 3.2 dB Noise Figure @ 850 MHz 21.5 dB Gain @ 850 MHz 20.0 dBm P1dB @ 850 MHz

CGB7289-SC-0G0T

Abstract: CGB7289-SP-0G00 CGB7289-SP-0G0T PB-CGB7289-SC-0000 PB-CGB7289-SP-0000 CGB7289-BD CGB7289-SC CGB7289-SC-0G00 0805 NPO 5U12
Contextual Info: DC-2.5 GHz InGaP HBT Matched Gain Block Amplifier May 2006 - Rev 23-May-06 CGB7289-SC Features Functional Block Diagram SOT-89 41.0 dBm Output IP3 @ 2140 MHz 21.0 dB Gain @ 900 MHz 13.3 dB Gain @ 2140 MHz 23.7 dBm P1dB @ 2140 MHz Low Performance Variation Over Temperature

BFS17

Abstract: transistor BFs 18 BFS17R marking E1
Contextual Info: BFS 17 / BFS 17 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter

"marking E1"

Abstract: BFS17 BFS17R sot 23 transistor 70.2
Contextual Info: BFS17/BFS17R Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 2 95 10527 BFS17R Marking: E4

MCH185A101J

Abstract: CGB7003-BD CGB7003-SC CGB7003-SC-0G00 CGB7003-SC-0G0T CGB7003-SP-0G00 CGB7003-SP-0G0T MCH185A101JK PB-CGB7003-SC-0000 PB-CGB7003-SP-0000
Contextual Info: DC-6.0 GHz InGaP HBT, MMIC or Packaged, Matched Gain Block Amplifier May 2006 - Rev 23-May-06 CGB7003-SC -BD Features Functional Block Diagram (SOT-89) Low Operating Voltage: 5V 31.5 dBm Output IP3 @ 850 MHz 2.9 dB Noise Figure @ 850 MHz 20.7 dB Gain @ 850 MHz

Contextual Info: PRELIMINARY TECHNICAL DATA a 1.6 V, Micro-Power, 8/10/12-Bit ADCs in 6 Lead SOT-23 AD7466/AD7467/AD7468 Preliminary Technical Data FEATURES Specified for VDD of 1.6 V to 3.6 V Low Power: 0.62 typ mW at 100 kSPS with 3V Supplies 0.48 typ mW at 50 kSPS with 3.6 V Supplies

AD7466

Abstract: AD7466BRT-REEL7 AD7467 AD7468 DB10 AD7466BRT-RL2 Motorola transistor 7144
Contextual Info: 1.6 V, Micropower 12-/10-/8-Bit ADCs in 6-Lead SOT-23 AD7466/AD7467/AD7468* FEATURES Specified for VDD of 1.6 V to 3.6 V Low Power: 0.62 mW Typ at 100 kSPS with 3 V Supplies 0.48 mW Typ at 50 kSPS with 3.6 V Supplies 0.12 mW Typ at 100 kSPS with 1.6 V Supplies

can AD797 be used with single power supply

Abstract: IC specification terminology AD7468BRT-R2 power transformer T2 v6 AD7466 AD7467 AD7468 DB10 ad797 rev b
Contextual Info: 1.6 V, Micropower 12-, 10-, and 8-Bit ADCs in 6-Lead SOT-23 AD7466/AD7467/AD7468 FUNCTIONAL BLOCK DIAGRAM FEATURES Specified for VDD of 1.6 V to 3.6 V Low power: 0.62 mW typ at 100 kSPS with 3 V supplies 0.48 mW typ at 50 kSPS with 3.6 V supplies 0.12 mW typ at 100 kSPS with 1.6 V supplies

Explain VDD terminology

Abstract: AD7466 AD7467 AD7468 DB10
Contextual Info: 1.6 V, Micropower 12-, 10-, and 8-Bit ADCs in 6-Lead SOT-23 AD7466/AD7467/AD7468 FUNCTIONAL BLOCK DIAGRAM FEATURES Specified for VDD of 1.6 V to 3.6 V Low power: 0.62 mW typ at 100 kSPS with 3 V supplies 0.48 mW typ at 50 kSPS with 3.6 V supplies 0.12 mW typ at 100 kSPS with 1.6 V supplies

Contextual Info: wmmt BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package 1 BFS17 Marking: E1