SOT 236 CB Search Results

Contextual Info: Discrete POWER & Signal Technologies National Semiconductor Surface Mount Transistors NPN General Purpose Amplifiers and Switches Device No. SOT-23 Mark MMBT100 (N1) MMBT100A (N1A) Case Style TO-236 (49) TO-236 (49) (V) Min (V) Min (V) Min 75 45 6 75 45

MMBT4124

Abstract: MMBT6515 MMPQ3904 MMPQ6700 PZT3904
Contextual Info: This I tr in Material a fcH fc-> LU □ NPN Surface Mount General Purpose Amplifiers and Switches Device No. SOT-23 Mark Case Style a Copyrighted □ -C V CBO ^CEO v EBO (V) Min (V) Min (V) Min 25 5 MMBT4124 (ZC) TO-236 (49) 30 a _□ 03 MMBT6515 (3J) TO-236

LL-34 zener diode

Abstract: LL-41 diode marking
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UMMSZ52XXB ZENER DIODE SURFACE MOUNT SILICON ZENER DIODE 3 1 2  1 1 2 2 SOD-323 SOD-523 FEATURES 2 1 LL-34 SYMBOL SOD-123 / SOD-323 SOD-523 / LL34 SOT-23  SOD-123 JEDEC TO-236 * Low reverse leakage current  2 SOT-23

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UMMSZ52XXB ZENER DIODE SURFACE MOUNT SILICON ZENER DIODE 3 2 2 „ JEDEC TO-236 1 1 SOD-323 SOD-523 FEATURES 2 1 LL-34 SYMBOL SOD-123/SOD-323 SOD-523/LL34 SOT-23-3 „ 2 2 * Low reverse leakage current „ 1 SOD-123 SOT-23-3 DESCRIPTION

MMBT3904

Abstract: MMBT4401 MMPQ2222 MMPQ6502 NMT2222 PZT2222A MMBT3904 1A MARK SO SOT
Contextual Info: This Surface Mount Transistors cr Material In a t-< fcH Copyrighted UJ a a a NPN Surface Mount General Purpose Amplifiers and Switches Device No. SOT-23 Mark MMBT4401 (2X) Case Style TO-236 (49) ^CBO ^CEO VffiO (V) (V) (V) Min Min Min 60 40 6 'cBO u Max

MMBTH10

Abstract: t-31-21 MMBTA92 MMBTH11 MPSH10 MPSH11 MPSW92 T3121 MPS-H10 national
Contextual Info: NATL SEMICOND HE DISCRETE D I bS01130 0Q37273 7 | National Semiconductor <n T -3 I-I7 £ IO < ro MPSA92 MPSW92 MMBTA92 I<o ro TO-236 SOT-23 TL/G/10100-5 PNP High Voltage Amplifier Electrical Characteristics Ta Symbol = 25°C unless otherwise noted Parameter

Mark T92

Contextual Info: This Pro Electron Series Material cr Ln CD b-1 b-1 ÜJ Pro Electron Surface Mount Bipolar Devices continued V *CES Device No. (SOT-23 Mark) a Copyrighted o □ -C a BSR14 (U8) Ln ID Case Style TO-236 (49) V 1 * ' ces ^C E O CBO (V) * *CBO (V) Min Min (nA)

Contextual Info: MPSH20/MMBTH20 W A National Jim Semiconductor MPSH20 MMBTH20 Ih r ¡J TO- 236 SOT-23 TO-92 TL/G/10100-5 TL/G/10100-3 NPN RF Transistor Electrical Characteristics ta =25°c unless otherwise noted Parameter Symbol Min Typ Max Units O FF CH ARACTERISTICS V (BR)CEO

3.9V ZENER DIODE

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UMMSZ52XXB Preliminary ZENER DIODE SURFACE MOUNT SILICON ZENER DIODE 3 2 2  JEDEC TO-236 1 1 SOD-323 SOD-523 FEATURES 2 1 LL-34 SYMBOL SOD-123/SOD-323 SOD-523/LL34 SOT-23-3  2 2 * Low reverse leakage current  1 SOD-123

Contextual Info: MPSA56/MPSW56/MMBTA56 £ 5 | National m im Semiconductor MPSA56 / if M MMBTA56 MPSW56 C iJ ir È 10-92 N ^ c 7^7 ! TO-236 (SOT- 23 TO- 226AE Tl/G/10100-5 B. c TL/G/10100-1 8c TL/G/10100-4 PNP General Purpose Amplifier Electrical Characteristics Symbol = 25°c unless otherwise noted

PN4258

Abstract: process 65
Contextual Info: PN4258/MMBT4258 National Semiconductor Ju â PN4258 MMBT4258 K rO JJ B ¡I e < /n / TO - 236 TO- 9 2 SOT - 23 E. f T L /G /1 0 1 0 0 -5 T L /G /1 0 1 0 0 -1 PNP Switching Transistor Electrical Characteristics ta = 2 5 °c unless otherw ise noted Sym bol

IMBT4401

Contextual Info: DIODES INC 32E D • 2Ô4Ô7T3 0DDD3b3 S * D I I SURFACE MOUNT TRANSISTORS NPN T R A N SIST O R S - TO-236 SOT-23 PACKAGE 310 mW DISSIPATION RATING (See Note 4) 1M 1N 6T 6U 6R 6S h FE @ 50-150 100-300 50-150 100-300 100-300 100-300 V ce/ I c VcE SAT V /m A

2n2369

Abstract: PN2369 2N2369 SOT-23
Contextual Info: 2N2369/PN2369/MMBT2369/MPQ2369 V glNational JuM Semiconductor 2N2369 PN2369 MMBT2369 U^ ffi/ T°-92 // T°-’8 U , TO- 236 SOT- 23 T L / G / ,0 00-7 Eg U T L /G /1 0 1 0 0 -9 MPQ2369 T L /G /1 0 1 0 0 -5 C T L /G /1 0 1 0 0 -1 NPN Switching Transistor Electrical Characteristics t a

KT503A

Abstract: 2SC1330 BC340 LOW-POWER SILICON NPN 2N2534 45M40 2N2909 2N2868
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate

2N4250 motorola

Abstract: bc154 KT501S LOW-POWER SILICON PNP BC313-16
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 20 TMPT956H4 2N5255 2N5256 TMPT812M4 2SA1037KFR 2SA1037KFR MMBA812M6 MMBA812M6 ~~g~~~~~: 25 30 35 . 40 45 50 BC479 2SA733 2SB819 TMPT956H5 2SA493G•TM· Y 2SB435G PN4250 A5T4250 2N4250 MPS4250 D29E7 BC313·1a

50N240

Abstract: JE9093C LOW-POWER SILICON PNP HSE194
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 200 200 200 200 200 200 200 200 200 200 FMMTA93 BSSn BSSn MPSA93 ESM693 2SA1330 2SA133005 2SA1255 2SA1376AL 200 200 200 200 200 200 200 200 200 85 90 95 772 30 30 30 30 30 30 30

2SA1020Y

Abstract: 2SA1015LY 2SA10150 2SA1015L-Y 2SA10200 2SA12130 2SA661 TEC9015 2SA705 2SA1015L
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 Manufacturer Y(BR)CEO hFE Ie Max A fT (Hz) 50 50 50 50 50 50 50 50 50 50 100 100 100 100 100 100 100 100 100 120 2SA1326 TEDl602C NB122EH NB122FH

Contextual Info: MMBT4401LT1 Preferred Device Switching Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage

TO-236

Abstract: MMBT4403LT1 MMBT4403LT1G MMBT4403LT3
Contextual Info: MMBT4403LT1 Switching Transistor PNP Silicon Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCBO −40 Vdc Emitter −Base Voltage

PN2222A MOTOROLA

Abstract: valvo emihus philco-ford VALVO GMBH 2SC1330 DIODE 6AA 2N709A Elcoma KT503A
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate

2N3609

Abstract: 2N3633 2N3520 2N3618 motorola 2SC1330 transitron 2N3543 KT503A LOW-POWER SILICON NPN 2N3625
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate

BC558AP

Abstract: TD401 BSX41 ED1802M LOW-POWER SILICON PNP 2N4917 TED1802L TED1802
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 25 30 35 40 50 55 60 2SA467G•TM·O 2MA5090 2SA509G·TM·O 2SA509G·O ST8705 2SA608NP 2SA608SP 2N4917 2N5374 BSY59 ED1602D TED1802M ED1802M V741 V741 A5T4062 A8T4062 RN4062 ~~~~8~2 65 70 75 80 2N4062 BC558A

MMBT5401LT1

Abstract: MMBT5401LT1G MMBT5401LT3 MMBT5401LT3G 2L SOT23
Contextual Info: MMBT5401LT1 Preferred Device High Voltage Transistor PNP Silicon Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage VCBO −160 Vdc Emitter −Base Voltage

BC137

Abstract: LM3661TL-1.40 G2025 LOW-POWER SILICON PNP ST8500 BC137 800 BCY90 NB021 BCY91 2N85
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 NB023FL NB023FZ 2N4285 2SA987F NB021EV NB021FV NB023EV NB023FV 2SA987E 2SA880 ~~~j~~ 15 20 25 30 35 40 2SA721 2N1223 2S3010 2S3010 2N4937 2N4938 2N4939 2N4940 2N4941 2N4942 2N935 2S3210 2N5110 TIPP32 2S3020