SOT-23 1P Z Search Results

MARKING 1P

Abstract: MMBT2222A MMBT2907A 1p sot23 TRANSISTOR 1P SOT23
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P

transistor 2222a to-92

Abstract: 2222A fairchild transistor pn 2222a transistor C 6092 transistor 2222a NPN2222A PN2222A NPN SMALL SIGNAL PSPICE
Contextual Info: MMBT2222A PZT2222A C C E E C B C TO-92 B B SOT-23 E SOT-223 Mark: 1P NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol

TF411

Abstract: t2222 PN2222A le TF-411
Contextual Info: ggM C O N O U C TO R PN2222A MMBT2222A PZT2222A SOT-23 SOT-223 Mark: 1P NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Pro­ cess 19. Absolute Maximum RâtinÇjS

PN2222A le

Abstract: oKH sot-23 PZT2222A on MMBT2222AI MMPQ
Contextual Info: PN2222AI MMBT2222AI MMPQ2222 I NMT2222 I PZT2222A D iscrete POWER & Sig n a l Technologies Na t ion a I S e m i c o n d u c t o r ' PN2222A PZT2222A MMBT2222A SOT-23 B SOT-223 Mark: 1P NMT2222 MMPQ2222 SOT-6 SOIC-16 B1 M a r i e .1 B NPN General Purpose Amplifier

TF411

Abstract: national PN2222A IC VS 1307 I-00 MMBT2222A MMPQ2222 NMT2222 PN2222A PZT2222A TR46
Contextual Info: PN2222AI MMBT2222A I MMPQ2222 I NMT2222 I PZT2222A Discrete POW ER & Signa l Technologies National S e m i c o n d u c t o r ” MMBT2222A PN2222A SOT-23 PZT2222A B SOT-223 Mark: 1P NMT2222 MMPQ2222 NPN General Purpose Amplifier This device is fo r use as a medium power amplifier and

Contextual Info: H E M iQ Q N P U S T O R PN2222A C< B' MMBT2222A PZT2222A TO-92 SOT-23 B SOT-223 Mark: 1P MMPQ2222 NMT2222 Mark: .1B SOIC-16 NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Pro­

2222A fairchild

Abstract: 22222a 2222a sot223 PN2222ABU SOT-23 EBC 2222A to-92 npn PN2222ANLbu
Contextual Info: MMBT2222A PN2222A PZT2222A C C E E TO-92 SOT-23 Mark:1P EBC C SOT-223 B B NPN General Purpose Amplifier • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. Absolute Maximum Ratings * Ta=25°C unless otherwise noted

Contextual Info: S i M IC3QM P U C T Q R BAV99 CONNECTION DIAGRAM SOT-23 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Màximum RâtinÇjS Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage 70 V lo Average Rectified Current

diode e 1205

Abstract: mmbd1201
Contextual Info: tß S e m i c o n d u c t o r " MMBD1201 /1203 /1204 /1205 ÜL 24 " E 0 " M A R K IN G SOT-23 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units Wiv Working Inverse Voltage

fairchild 1P

Contextual Info: S E M IC O N D U C T O R MMBD1201 /1203 /1204 /1205 CONNECTION f 1201 DIAGRAMS 3 1 2NC 1204 t MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 * 1 2 3 I I SOT-23 1203^ 3 * ^ * + 1 ; 205 * J 2 High Conductance Ultra Fast Diode S o u rce d fro m P roce ss 1P.

Contextual Info: LESHAN RADIO COMPANY, LTD. Preliminary Information General Purpose Transistors NPN Silicon LMBT2222AWT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which 3 COLLECTOR is designed for low power surface mount

conclusion of zener diode voltage report

Abstract: 1314 MARKING DIODE lrc zener diode
Contextual Info: 乐山无线电股份有限公司 Leshan Radio Company, Ltd. 产 品 规 格 书 Specification of Products Samsung VD TO CUSTOMER CUSTOMER P.N. LRC P.N. LRC099-04BT1G DESCRIPTION SC-70-6 ESD Protection Array APPROVE BY 接受印 ACKNOWLEDGEMENT 兹证明此份资料已经收到

Contextual Info: NPN Silicon RF Transistor BF 771 • For low noise, high gain amplifiers up to 2GHz • For linear broadband amplifiers • For modulators and amplifiers in VCR-tuners Type M arking O rdering code for versions on 8 mm-tape Package BF 771 R3 Q62702-F990 SOT 23

marking k4

Abstract: 100az FMMT2222A BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TR A N SISTO R S TR A N SISTO R S Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW 60A BCW60B BCW60C BCW60D BCW 61A BCW61B BCW61C BCW61D BCW 65A

BC547 sot package sot-23

Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

Z32100

Abstract: Virtual Memory Processing Unit z32101 kl2 j2 131-6 wj 71
Contextual Info: Zilog Product Specification January 1987 /o 3 0 3 3 Z32101 M EM O RY M A N A G E M E N T U N IT D E SC R IPT IO N The Z32101 M emory M anagem ent U nit MMU is a 32-bit bus-structured device that provides logicalto-physical address translation, memory organization, control, and access protection for

transistor marking 1p Z

Contextual Info: Tem ic S852T Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features • Low supply voltage

marking 6AA SOD

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Information General Purpose Transistor MMBT2222AWT1 NPN Silicon Motorola Preferred Device These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which is

v05 SOT

Contextual Info: MP7651 r ir i JnkI w »- M icro Pöwer Systems 8-Channel High-Speed Nor-Inverting 10 MHz Input Bandwidth 8-Bit DACs with Output Buffer and Serial Digital Data Port and Internal Chip Address; Decoder FEATURES • Low Harmonic Distortion: 0.25% typical with VREF = 1 V p-p @ 1 MHz

transistor 2222a to-92

Abstract: MMBT2222ALT1 1P Marking code CS 1n914 SOD123 2305 SOT-23
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1* COLLECTOR 3 *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 2222 2222A Unit Collector – Emitter Voltage VCEO 30 40 Vdc Collector – Base Voltage

MMBF4856

Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the