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    SOT-23 BR 13 Search Results

    SOT-23 BR 13 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 BR 13 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C945

    Abstract: BR c945 transistor transistor npn c945 c945 transistor position of emitter of c945 NPN C945 C945 NPN transistor c945 C945 plastic C945 IC
    Text: C945 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.2 * Collector current ICM : 0.15 * Collector-base voltage V(BR)CBO : 60 * Operating and storage junction TJ,Tstg: -55OC to +150OC W (Tamb=25OC) A V temperature range SOT-23


    Original     		PDF OT-23 -55OC 150OC OT-23 MIL-STD-202E C945 BR c945 transistor transistor npn c945 c945 transistor position of emitter of c945 NPN C945 C945 NPN transistor c945 C945 plastic C945 IC

    125OC

    Abstract: MMBT3904
    Text: MMBT3904 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM 0.2 W(Tamb=25OC) * Collector current ICM 0.2 A * Collector-base voltage V(BR)CBO: 60 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC SOT-23 COLLECTOR


    Original     		PDF MMBT3904 OT-23 -55OCto 150OC OT-23 MIL-STD-202E 125OC MMBT3904

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM 0.2 W(Tamb=25OC) * Collector current ICM 0.2 A * Collector-base voltage V(BR)CBO: 60 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC SOT-23 COLLECTOR


    Original     		PDF MMBT3904 OT-23 -55OCto 150OC OT-23 MIL-STD-202E

    Untitled

    Abstract: No abstract text available
    Text: MMBT4403 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation O PCM: 0.3 W(Tamb=25 C) * Collector current ICM: - 0.6 A * Collector-base voltage V(BR)CBO: - 40 V * Operating and storage junction temperature range TJ,Tstg: -55OC to+150OC SOT-23


    Original     		PDF MMBT4403 OT-23 -55OC 150OC OT-23 MIL-STD-202E

    MMBT5550

    Abstract: transistor eb 2030
    Text: MMBT5550 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM: 0.225 W(Tamb=25OC) * Collector current ICM: 0.6 A * Collector-base voltage V(BR)CBO: 160 V * Operating and storage junction temperature range TJ,Tstg: -55 OC to + 150OC SOT-23


    Original     		PDF MMBT5550 OT-23 150OC OT-23 MIL-STD-202E MMBT5550 transistor eb 2030

    MMBT4401

    Abstract: No abstract text available
    Text: MMBT4401 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation O PCM: 0.3 W(Tamb=25 C) * Collector current ICM: 0.6 A * Collector-base voltage V(BR)CBO: 60 V * Operating and storage junction temperature range TJ,Tstg: -55OC to+150OC SOT-23


    Original     		PDF MMBT4401 OT-23 -55OC 150OC OT-23 MIL-STD-202E MMBT4401

    Untitled

    Abstract: No abstract text available
    Text: MMBT5550 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM: 0.225 W(Tamb=25OC) * Collector current ICM: 0.6 A * Collector-base voltage V(BR)CBO: 160 V * Operating and storage junction temperature range TJ,Tstg: -55 OC to + 150OC SOT-23


    Original     		PDF MMBT5550 OT-23 150OC OT-23 MIL-STD-202E

    MMBT4403

    Abstract: No abstract text available
    Text: MMBT4403 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation O PCM: 0.3 W(Tamb=25 C) * Collector current ICM: - 0.6 A * Collector-base voltage V(BR)CBO: - 40 V * Operating and storage junction temperature range TJ,Tstg: -55OC to+150OC SOT-23


    Original     		PDF MMBT4403 OT-23 -55OC 150OC OT-23 MIL-STD-202E MMBT4403

    Untitled

    Abstract: No abstract text available
    Text: MMBT4401 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation O PCM: 0.3 W(Tamb=25 C) * Collector current ICM: 0.6 A * Collector-base voltage V(BR)CBO: 60 V * Operating and storage junction temperature range TJ,Tstg: -55OC to+150OC SOT-23


    Original     		PDF MMBT4401 OT-23 -55OC 150OC OT-23 MIL-STD-202E

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR mW (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 100 mA ICM: Collector-base voltage 60 V V(BR)CBO:


    Original     		PDF OT-23 OT-23 2SC1623 100mA,

    AZY TRANSISTOR

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 KTA1505 1. BASE TRANSISTOR PNP 2. EMITTER 3. COLLECTOR mW (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.5 A ICM: Collector-base voltage -35 V V(BR)CBO:


    Original     		PDF OT-23 OT-23 KTA1505 -100mA -400mA -100mA, -10mA -20mA AZY TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors A1015LT1 TRANSISTOR PNP SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.15 A ICM: Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF OT-23 A1015LT1 OT-23 -10mA 30MHz

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors C1815LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current ICM: 0.15 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range


    Original     		PDF OT-23 C1815LT1 OT-23 30MHz C1815LT1

    2SA812

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulated Transistors 2SA812 SOT-23-3L TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES W (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current A ICM : -0.1 Collector-base voltage V V(BR)CBO : -60


    Original     		PDF OT-23-3L 2SA812 OT-23-3L -10mA 2SA812

    Untitled

    Abstract: No abstract text available
    Text: SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC1623 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current mA ICM: 100 Collector-base voltage V V(BR)CBO: 60 Operating and storage junction temperature range


    Original     		PDF OT-23-3L OT-23-3L 2SC1623 100mA,

    C1815L

    Abstract: AV1815LT1 C1815LT1 AV1815
    Text: @vic AV1815LT1 SOT-23 Plastic-Encapsulate Transistors AV1815LT1 SOT—23 TRANSISTOR（ NPN ） 1. BASE 2. EMITTER FEATURES 3. COLLECTOR １．０ Power dissipation PCM : 0.2 W（Tamb=25℃） Collector current ICM: 0.15 A Collector-base voltage V BR CBO : 60


    Original     		PDF AV1815LT1 OT-23 OT--23 037TPY 950TPY 550REF 022REF C1815L AV1815LT1 C1815LT1 AV1815

    MMBV2107

    Abstract: MMBD701LT1 MMBV609LT1 SMD BR 32 IFM450 BAV170LT c30 diode BAS116LT1 BAS21LT1 BAV170LT1
    Text: MX-MICROELECTRONICS SOT-23 PACKAGE • • • • • • • 片式开关二极管 SMD SWITHING DIODES • 片式开关二极管 SMD SWITHING DIODES SOT-23 SMD VARACTOR DIODES 型号 TYPE V(BR) Vdc Min Vdc IR A top VF Vdc IF MA Min IR trr ns PIN 123 Max


    Original     		PDF OT-23 OT-23) BAL99LT1 BAS16LT1 BAS21LT1 BAS116LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAV170LT1 MMBV2107 MMBD701LT1 MMBV609LT1 SMD BR 32 IFM450 BAV170LT c30 diode BAS116LT1 BAS21LT1 BAV170LT1

    Untitled

    Abstract: No abstract text available
    Text: BSS84LT1, SBSS84LT1 Power MOSFET Single P-Channel SOT-23 -50 V, 10 W • SOT−23 Surface Mount Package Saves Board Space • AEC Q101 Qualified − SBSS84LT1 • These Devices are Pb−Free and are RoHS Compliant http://onsemi.com V BR DSS RDS(ON) MAX −50 V


    Original     		PDF BSS84LT1, SBSS84LT1 OT-23 BSS84LT1/D

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 2SC5344 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.8 A ICM: Collector-base voltage V V(BR)CBO: 35


    Original     		PDF OT-23 2SC5344 100mA 500mA,

    BSS84L

    Abstract: BVSS84LT1G
    Text: BSS84L, BVSS84L Power MOSFET Single P-Channel SOT-23 -50 V, 10 W • SOT−23 Surface Mount Package Saves Board Space • AEC Q101 Qualified and PPAP Capable − BVSS84L • These Devices are Pb−Free and are RoHS Compliant http://onsemi.com V BR DSS RDS(ON) MAX


    Original     		PDF BSS84L, BVSS84L OT-23 BVSS84L BSS84LT1/D BSS84L BVSS84LT1G

    SBSS84LT1G

    Abstract: SBSS84LT1
    Text: BSS84LT1, SBSS84LT1 Power MOSFET Single P-Channel SOT-23 -50 V, 10 W • SOT−23 Surface Mount Package Saves Board Space • AEC Q101 Qualified − SBSS84LT1 • These Devices are Pb−Free and are RoHS Compliant http://onsemi.com V BR DSS RDS(ON) MAX −50 V


    Original     		PDF BSS84LT1, SBSS84LT1 OT-23 SBSS84LT1 BSS84LT1/D SBSS84LT1G

    tp0610t

    Abstract: tp0610 part marking for tp0610t
    Text: HtSæ Si, TP0610 SERIES P-Channel Enhancement-Mode MOS Transistors BOTTOM VIEW TO-92 TO-226AA PRODUCT SUMMARY "W" •d (A) PACKAGE -60 10 -0.18 TO-92 -60 10 -0.12 SOT-23 PART NUMBER V (BR)DSS TP0610L TP0610T 1 SOURCE 2 GATE 3 DRAIN TOP VIEW SOT-23 Performance Curves: VPDS06


    OCR Scan     		PDF TP0610 O-226AA) TP0610L TP0610T OT-23 VPDS06 TP0610T part marking for tp0610t

    MMBT3960

    Abstract: MMBT3960A MMBT4260 MMBT6543 MMBT4261 3D MARKING SOT-23 sot-23 Marking 3D 3D marking sot23 MMBC1009F1 MMBC1321Q2
    Text: SURFACE MOUNT PRODUCTS — SOT 23 continued SOT-23 Transistors, VHF/UHF Amplifiers, Mixers, Oscillators P inout: 1-Base, 2 -E m itte r, 3 -C o lle c to r NPN 'T Device c ob Max (pF) Marking Min (GHz @ 'c (mA) v BR(CEO) 1T 15 3F 3E Q2 Q3 Q4 Q5 3B 3A F1 F2


    OCR Scan     		PDF OT-23 MMBT3960A MMBT3960 MMBT6543 MMBTH10 MMBC1321Q2 MMBC1321Q3 MMBC1321Q4 MMBC1321Q5 MMBT918 MMBT4260 MMBT4261 3D MARKING SOT-23 sot-23 Marking 3D 3D marking sot23 MMBC1009F1

    PT3904

    Abstract: No abstract text available
    Text: SOT-23/TO-236AB ELECTRICAL CHARACTERISTICS at T . = 25°C V BR CBO V (BR)CEO V(BR)EBO Max. @ vCB Device Type M arking (V) (V) (V) VCE(sat) DC C urrent Gain ^CBO h FE t>FE @ lc @ VCE Max. @ lc (nA) (V) Min. Max. (mA) (V) (V) (mA) 't Min. @ lc (MHz) (mA) ts'


    OCR Scan     		PDF OT-23/TO-236AB PT2222A PT3904 TMPT4401 PT5089 PT6427 PTA06 PTA42 050H33Ã PT3904