SOT-23 IY Search Results

sot-23 IY

Abstract: KTA1298 IY TRANSISTOR MARKING IY SOT
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 KTA1298 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES z Low frequency power amplifier application z Power switching application 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 KTA1298 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES z Low frequency power amplifier application z Power switching application 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: KTA1298 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Low frequency power amplifier application — Power switching application MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC* TJ Parameter Collector-Base Voltage

marking VB SOT-23

Abstract: SMP1302-079 P1307
Contextual Info: GaAs RF ICs and Modules PIN Diodes Attenuator PIN Diodes a / y il Iy y y H A y t * * h œ a B Common Cathode SOT-23 Series Pair SOT-23 ♦ SMP1302-003 ♦ SMP1302-004 ♦ 1 SMP1302-005 PF9 PF3 PF2 SC-70 SC-70 SC-70 ♦ SMP1302-073 ♦ SMP1302-074 PF9 PF3 ♦ 1SMP1302-075

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA1298 TRANSISTOR PNP SOT–23 FEATURES  Low Frequency Power Amplifier Application  Power Swithing Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

ltkh

Abstract: marking LTIZ LGH3C100K24 LTIZ LT1615-1 LTIZ SOT A47 SOT23 R 4R7 inductor SOf-23 LMK316BJ475
Contextual Info: u im LT1615/LT1615-1 TECHNOLOGY M ic ro p o w e r Step-Up D C /D C C onverters in SOT-23 FEATURES DE9CRIFT10n • Low Q iescent Cirrent: 20|aAin Active Mode <1 oAin Shutdown Mode ■ Operates with V|N as Low as 1V ■ Low Vcesat Switch: 250mV at 300mA ■ Tiny 5-Lead SOT-23 Package

431ai

Abstract: 431bi 5 amp possitive regulator ic 431BI 8 PIN 27BSC TS431AI TS431BI TS431I
Contextual Info: TS431I Adjustable Precision Shunt Regulator TO-92 SOT-89 Pin Definition: 1. Reference 2. Anode 3. Cathode SOT-23 Pin Definition: 1. Reference 2. Cathode 3. Anode SOP-8 Pin Definition: 1. Cathode 8. Reference 2. Anode 7. Anode 3. Anode 6. Anode 4. N/C 5. N/C

transistor npn c 6073

Abstract: 433 SOT-23 transistor npn d 2078 944 1L2 NE68139
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fx= 8 GHz • LOW NOISE FIGURE: 1,2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB AT 2 GHz 00 CHIP 35 (MICRO-X) 33 (SOT 23 STYLE) 39 (SOT 143 STYLE)

Contextual Info: FJ596S SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA SI N-CHANNEL JUNCTION FEl CAPACITOR MICROPHONE APPLICATIONS Package; SOT-23 * Especially Suited For Use In Audio telephone Capacitor Microphones * Excellent Voltage Characteristic * Excellent Transient Characteristic

2SA1298Y

Abstract: SOT-23-hg 2SA1298 2SA1298-O 2SA1298-Y MARKING IY SOT
Contextual Info: 2SA1298 -0.8A , -35V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Low Frequency Power Amplifier Application  Power Switching Applications

175417

Contextual Info: National Semiconductor LM45B/LM45C SOT-23 Precision Centigrade Temperature Sensors • Portable Medical Instruments ■ HVAC General Description The LM45 series are precision integrated-circuit tempera­ ture sensors, whose output voltage is linearly proportional to

marking B3A sot23-5

Contextual Info: BC856S SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR Package: SOT-23 ♦Com plem ent to BC846S ABSOLUTE MAXIMUM RATINGS a t Tflmb=1is r c _ C haracteristic Symbol Rating

KTA1298

Abstract: MARKING IY SOT sot-23 IY marking IY
Contextual Info: SEMICONDUCTOR KTA1298 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking IY No. 1 Item Marking Device Mark I KTA1298 hFE Grade Y O,Y * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

MARKING IY SOT

Contextual Info: WTA8921 PNP Silicon Transistors COLLECTOR * “G” Lead Pb -Free 3 1 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous Symbol VCEO VCBO VEBO IC Value

TRANSISTORE

Abstract: BFS18 BFS19 Q62702 Q62702-F349
Contextual Info: BFS 18 BFS 19 N P N - T r a n s i s t o r e n - H F BFS 18 und BFS 19 sind epitaktische NPN-Silizium-Planar-Transistoren im Gehäuse 23 A3 DIN 41 869 SOT-23 . Die Transistoren wurden speziell für HIF-Schaltungen in Dick- und Dünnfilmtechnik geschaffen. Zur Kennzeichnung des Typs wejrden die Transistoren folgender­

KTA1298

Abstract: sot-23 IY
Contextual Info: KTA1298 PNP Silicon Transistors COLLECTOR 3 1 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous Symbol VCEO VCBO VEBO IC Value -30 -35 -5.0 -800 Unit Vdc

transistor 13003 AD

Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTA1298 SOT_23 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.8 A ICM: Collector-base voltage

Contextual Info: 8550S SEM ICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER Package: SOT-23 * Complement to 8050S * Collector Current: Ic=-500mA * Collector D issipation: Pc=225mW Ta=25°C ABSOLUTE M AXIMUM R ATINGS a t Tan*-2$ C

Q62702-F979

Abstract: BF599
Contextual Info: NPN Silicon RF Transistor ● Common emitter IF/RF amplifier ● Low feedback capacitance due to shield diffusion BF 599 Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) BF 599 NB Q62702-F979 B SOT-23 E C Maximum Ratings Parameter

RTO BH

Abstract: NPN BH RE IY 925 TRANSISTOR transistor marking bh ra transistors 368 & 369
Contextual Info: Die no. D-15 NPN medium power transistor Dimensions Units : mm These are epitaxial planar NPN silicon transistors. SST3 Features 2.9 available in a SST3 (SST, SOT-23) package, see page 300 ± 0.2 1 . 9 * 0.2 collector-to-emitter breakdown voltage, BVCE0 = 45 V (min) at

transistor smd IY

Contextual Info: Diodes IC Transistors Transistor T SMD Type Product specification KTA1298 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 1 0.55 ● Collector Current: IC=-800mA +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector Power Dissipation: PC=200mW 2 +0.1 0.95-0.1

Contextual Info: Transistors SMD Type PNP Silicon Transistors KTA1298 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 1 0.55 ● Collector Current: IC=-800mA +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector Power Dissipation: PC=200mW 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1

Contextual Info: SOT-23 Plastic-Encapsulate Transistors KTA1298 SOT_23 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.8 A ICM: Collector-base voltage -35 V V(BR)CBO: Operating and storage junction temperature range