SOT-23 MARKING JE Search Results

Contextual Info: KST42 / KST43 NPN Epitaxial Silicon Transistor Features • High-Voltage Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Marking Package Packing Method KST42MTF 1D SOT-23 3L Tape and Reel KST43MTF 1E SOT-23 3L Tape and Reel

Marking JA

Abstract: KTK951S
Contextual Info: SEMICONDUCTOR KTK951S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. ① ② A JE 2 J 1 Item Marking Description Device Mark J KTK951S IDSS Grade E C, D, E * Lot No. JA 2009. 1st Week [J:1st Character, A:2nd Character]

Contextual Info: BAS40 / -04 / -05 / -06 Surface Mount Schottky Barrier Diode SOT-23 Features — — — Low turn-on voltage Fast switching PN junction guard Ring for transient Mechanical Data — Case: SOT-23, Molded plastic — Marking & Polarity: See diagram below — Weight: 0.008 grams approx.

marking P2 sot-23

Abstract: wA MARKING SOT-23 SERIES DIODE 1403A MMBD1400 MMBD1401 MMBD1401A MMBD1403 MMBD1404 MMBD1405 1405A
Contextual Info: CONNECTION DIAGRAMS 3 3 1401 3 3 1403 29 3 1 2 SOT-23 SOT-23 2 NC 1 2 1 2 3 3 1404 1405 2 1 MARKING MMBD1401 29 MMBD1404 MMBD1403 32 MMBD1405 1 33 34 1 2 1 2 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: •URGE BAV99 vvvvw.surgecomponents.com Silicon Epitaxial Planar Switching Diode Fast switching in thick and thin-film circuits diode □— cr Marking Code: A7 SOT-23 Plastic Package Absolute Maximum Ratings T* - 25 °C Parameter Symbol Value Unit V rrm

Contextual Info: BSS63 PNP General-Purpose Amplifier Description C This device is designed for general-purpose amplifier and switch applications requiring high voltages. Sourced from process 74. E SOT-23 Mark: T3 B Ordering Information Part Number Marking Package Packing Method

Contextual Info: BCW68G PNP General-Purpose Amplifier Description C This device is designed for general-purpose amplifier and switching applications at currents to 500 mA. Sourced from process 63. E SOT-23 Mark: DG B Ordering Information Part Number Marking Package Packing Method

Contextual Info: MMBT5771 PNP Switching Amplifier Description C This device is designed for very high-speed, saturated switching at collector currents to 100 mA. Sourced from process 65. E SOT-23 Mark: 3R B Ordering Information Part Number Marking Package Packing Method MMBT5771

Contextual Info: BCX71K PNP General-Purpose Amplifier Description C This device is designed for applications requiring extremely high-current gain at collector currents to 300 mA. Sourced from process 68. E SOT-23 Mark: BK B Ordering Information Part Number Marking Package

Contextual Info: MMBTA55 PNP General-Purpose Amplifier Description C This device is designed for general-purpose amplifier applications at collector currents to 300 mA. Sourced from process 73. E SOT-23 Mark: 2H B Ordering Information Part Number Marking Package Packing Method

Contextual Info: MMBT3640 PNP Switching Amplifier Description C This device is designed for very high-speed saturated switching at collector currents to 100 mA. Sourced from process 65. E SOT-23 Mark: 2J B Ordering Information Part Number Marking Package Packing Method MMBT3640

Contextual Info: BSR18A PNP General-Purpose Amplifier Description C This device is designed as a general-purpose amplifier for switching applications at collector currents of 10 A to 100 mA. Sourced from process 66. E SOT-23 Mark: T92 B Ordering Information Part Number Marking

2n5551

Abstract: 2N5551 SOT23
Contextual Info: 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers. 2N5551 MMBT5551 3 2 TO-92 1 SOT-23 Marking: 3S 1. Base 2. Emitter 3. Collector Ordering Information 1

BAT400D

Contextual Info: BAT400D SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER 3 1 2 Marking Code: PK SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 40 V Working Peak Reverse Voltage VRWM 40 V VR 40 V VR(RMS)

fairchild sot-23 bav70

Abstract: sot-23 body marking A4 MARKING W2 SOT23 BAV70 ON marking code w2 sot23 fairchild s sot-23 Device Marking BAV70 BAV74 BAV99 sot-23 MARKING CODE A4
Contextual Info: BAV70 / BAV74 BAV70 / 74 3 CONNECTION DIAGRAMS A4 3 1 2 SOT-23 3 1 BAV70 2 MARKING A4 BAV74 1 JA 2 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

0 281 005 023

Abstract: D023 dd1270 0 281 003 018 0 281 020 023
Contextual Info: BSS138N SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Enhancement mode V DS 60 V R DS on ,max 3.5 Ω ID 0.23 A • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant PG-SOT-23 Type Package Tape and Reel Marking

SSN SOT-23

Abstract: sot-23 ssn L6327 SN7002N PG-SOT-23
Contextual Info: SN7002N SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 60 V 5 Ω 0.2 A PG-SOT-23 Drain pin 3 Gate pin1 Source pin 2 Type Pb-free Tape and Reel Information Marking

SKs TRANSISTOR

Abstract: BSS138N L6327 BSS138N SKs 83 D023 D019 esd 20.20 JESD22-A114 L6327
Contextual Info: BSS138N SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Enhancement mode V DS 60 V R DS on ,max 3.5 Ω ID 0.23 A • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant PG-SOT-23 Type Package Tape and Reel Marking

Contextual Info: KST92 PNP Epitaxial Silicon Transistor Features • High-Voltage Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Marking Package Packing Method KST92MTF 2D SOT-23 3L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

Contextual Info: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability

sot-23 marking code sf

Abstract: Marking ss SOT-23 BD1701 MMBD1701 MMBD1701A MMBD1703 MMBD1703A MMBD1704 MMBD1705 sot-23 Marking B1
Contextual Info: 3 CONNECTION DIAGRAMS 85 3 1 3 1701 2 2 NC 1 2 SOT-23 MMBD1701 MMBD1703 MMBD1704 MMBD1705 1 MARKING 85 MMBD1701A 87 MMBD1703A 88 MMBD1704A 89 MMBD1705A 1 1 2 1703 2 3 3 1704 85A 87A 88A 89A 3 1 1705 2 High Conductance Low Leakage Diode Sourced from Process 1T.

MARKING W2 SOT23

Abstract: diode 4148 sot-23 fairchild s sot-23 Device Marking Diode Marking 1p SOT-23 marking code w2 sot23 marking P2 sot-23 On semiconductor date Code sot-23 SOT23 DIODE marking CODE AV fairchild marking codes sot-23 4148SE
Contextual Info: 3 CONNECTION DIAGRAMS 5H 3 3 4148 2 NC 1 1 2 4148CC 2 SOT-23 MARKING MMBD4148 5H MMBD4148CA D6 MMBD4148CC D5 MMBD4148SE D4 1 3 1 2 3 3 1 2 4148SE 1 4148CA 2 High Conductance Ultra Fast Diode Sourced from Process 1P. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings*

power sot-23 Marking aa

Abstract: SOT23 component marking code KA MARKING W2 SOT23 L443 sot-23 MARKING bv BAT54A BAT54C BAT54S Schottky Diode Marking sot-23 marking P2 sot-23
Contextual Info: BAT54/A/C/S 3 CONNECTION DIAGRAMS PACKAGE BAT54 L4P SOT-23 TO-236AB Low 1 2 3 2 NC 1 MARKING BAT54 L4P BAT54C L43 BAT54A L42 BAT54S L44 3 BAT54C 2 1 3 3 2 1 BAT54A BAT54S 1 2 Schottky Barrier Diode Sourced from Process KA Absolute Maximum Ratings* Sym Tstg

MMBD1503

Abstract: MMBD1501 MMBD1501A MMBD1503A MMBD1504 MMBD1505 MARKING 1L SOT-23 marking P2 sot-23 wA MARKING SOT-23 SERIES DIODE SOT23 MARKING CODE 720
Contextual Info: 3 CONNECTION DIAGRAMS 11 3 1 2 SOT-23 MMBD1501 MMBD1503 MMBD1504 MMBD1505 1 3 1501 2 MARKING 11 MMBD1501A 13 MMBD1503A 14 MMBD1504A 15 MMBD1505A 2 NC 1 A11 A13 A14 A15 1 2 3 3 1504 1503 3 1 2 1 1505 2 High Conductance Low Leakage Diode Sourced from Process 1L.